TW464917B - Modulator and integrated circuit - Google Patents
Modulator and integrated circuit Download PDFInfo
- Publication number
- TW464917B TW464917B TW88120022A TW88120022A TW464917B TW 464917 B TW464917 B TW 464917B TW 88120022 A TW88120022 A TW 88120022A TW 88120022 A TW88120022 A TW 88120022A TW 464917 B TW464917 B TW 464917B
- Authority
- TW
- Taiwan
- Prior art keywords
- modulator
- waveguide
- patent application
- layer
- scope
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005699 Stark effect Effects 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 83
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/38—Anti-reflection arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902916A SE9902916L (sv) | 1999-08-16 | 1999-08-16 | Modulator och integrerad krets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW464917B true TW464917B (en) | 2001-11-21 |
Family
ID=20416677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW88120022A TW464917B (en) | 1999-08-16 | 1999-11-17 | Modulator and integrated circuit |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU6486900A (xx) |
| SE (1) | SE9902916L (xx) |
| TW (1) | TW464917B (xx) |
| WO (1) | WO2001013479A1 (xx) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE521023C2 (sv) * | 2000-07-07 | 2003-09-23 | Ericsson Telefon Ab L M | Optisk anordning samt framställning därav |
| JP2002164622A (ja) * | 2000-11-22 | 2002-06-07 | Toshiba Electronic Engineering Corp | 半導体光素子 |
| JP4660999B2 (ja) * | 2001-08-01 | 2011-03-30 | パナソニック株式会社 | 光導波路デバイス及びコヒーレント光源及び光学装置 |
| KR100424461B1 (ko) * | 2001-09-05 | 2004-03-26 | 삼성전자주식회사 | 전계 흡수 변조형 레이저 모듈을 위한 본딩 패드 및 그 제조 방법 |
| SE0200750D0 (sv) | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing av photonic device and a photonic device |
| SE0200751D0 (sv) | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing a photonic device and photonic device |
| KR100493089B1 (ko) * | 2002-12-17 | 2005-06-02 | 삼성전자주식회사 | 집적광학장치 |
| GB2419033B (en) | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
| WO2019026943A1 (ja) * | 2017-08-01 | 2019-02-07 | 三菱電機株式会社 | 光半導体素子の製造方法および光半導体素子 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2746065B2 (ja) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | 光半導体素子の製造方法 |
| US5432123A (en) * | 1993-11-16 | 1995-07-11 | At&T Corp. | Method for preparation of monolithically integrated devices |
| GB9425729D0 (en) * | 1994-09-14 | 1995-02-22 | British Telecomm | Otical device |
| JP3674806B2 (ja) * | 1997-05-01 | 2005-07-27 | 日本電信電話株式会社 | 半導体光導波路機能素子 |
-
1999
- 1999-08-16 SE SE9902916A patent/SE9902916L/xx not_active Application Discontinuation
- 1999-11-17 TW TW88120022A patent/TW464917B/zh not_active IP Right Cessation
-
2000
- 2000-08-04 WO PCT/SE2000/001547 patent/WO2001013479A1/en active Application Filing
- 2000-08-04 AU AU64869/00A patent/AU6486900A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| AU6486900A (en) | 2001-03-13 |
| SE9902916D0 (sv) | 1999-08-16 |
| WO2001013479A1 (en) | 2001-02-22 |
| SE9902916L (sv) | 2001-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI638464B (zh) | 半導體光調變元件 | |
| US6455338B1 (en) | Method of manufacturing an integrated semiconductor laser-modulator device | |
| US8300991B2 (en) | Waveguide-type semiconductor optical modulator and method for manufacturing the same | |
| US20070223543A1 (en) | Laterally Implanted Electroabsorption Modulated Laser | |
| TW464917B (en) | Modulator and integrated circuit | |
| JP5263718B2 (ja) | 半導体光変調器 | |
| US10027088B2 (en) | Integrated semiconductor optical element and manufacturing method for same | |
| JP2001117058A (ja) | 半導体導波路素子及びその製造方法 | |
| US8498501B2 (en) | Semiconductor optical modulator and semiconductor mach-zehnder optical modulator | |
| JP6531525B2 (ja) | 光変調器および光変調器の製造方法 | |
| JP4147858B2 (ja) | 光デバイスおよびその製造方法 | |
| CN112346264A (zh) | 半导体光元件及其制造方法 | |
| US6602432B2 (en) | Electroabsorption modulator, and fabricating method of the same | |
| US11855700B2 (en) | High bandwidth optical modulator | |
| US20200403380A1 (en) | Semiconductor laser device | |
| US6363093B1 (en) | Method and apparatus for a single-frequency laser | |
| CN114114721A (zh) | 光调制器 | |
| JP3345299B2 (ja) | 量子井戸電気光学変調器 | |
| JP2760276B2 (ja) | 選択成長導波型光制御素子 | |
| EP1372229B1 (en) | Integrated semiconductor laser and waveguide device | |
| US20230221588A1 (en) | High bandwidth travelling wave electro absorption modulator (eam) chip | |
| JP7294938B2 (ja) | 埋め込み型半導体光素子及びその製造方法 | |
| JP2917787B2 (ja) | 埋め込み構造半導体光導波路素子およびその製造方法 | |
| JP2011175216A (ja) | 半導体光素子、半導体マッハツェンダー型光変調器および半導体光素子の製造方法 | |
| JP4961732B2 (ja) | 光変調器集積光源 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |