SE9902916L - Modulator och integrerad krets - Google Patents

Modulator och integrerad krets

Info

Publication number
SE9902916L
SE9902916L SE9902916A SE9902916A SE9902916L SE 9902916 L SE9902916 L SE 9902916L SE 9902916 A SE9902916 A SE 9902916A SE 9902916 A SE9902916 A SE 9902916A SE 9902916 L SE9902916 L SE 9902916L
Authority
SE
Sweden
Prior art keywords
waveguide
modulator
semiconductor material
refractive index
cover layer
Prior art date
Application number
SE9902916A
Other languages
English (en)
Swedish (sv)
Other versions
SE9902916D0 (sv
Inventor
Michael Rask
Lennart Lundqvist
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9902916A priority Critical patent/SE9902916L/xx
Publication of SE9902916D0 publication Critical patent/SE9902916D0/xx
Priority to TW88120022A priority patent/TW464917B/zh
Priority to PCT/SE2000/001547 priority patent/WO2001013479A1/en
Priority to AU64869/00A priority patent/AU6486900A/en
Publication of SE9902916L publication Critical patent/SE9902916L/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
    • G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/38—Anti-reflection arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
SE9902916A 1999-08-16 1999-08-16 Modulator och integrerad krets SE9902916L (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9902916A SE9902916L (sv) 1999-08-16 1999-08-16 Modulator och integrerad krets
TW88120022A TW464917B (en) 1999-08-16 1999-11-17 Modulator and integrated circuit
PCT/SE2000/001547 WO2001013479A1 (en) 1999-08-16 2000-08-04 Modulator and integrated circuit
AU64869/00A AU6486900A (en) 1999-08-16 2000-08-04 Modulator and integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9902916A SE9902916L (sv) 1999-08-16 1999-08-16 Modulator och integrerad krets

Publications (2)

Publication Number Publication Date
SE9902916D0 SE9902916D0 (sv) 1999-08-16
SE9902916L true SE9902916L (sv) 2001-02-17

Family

ID=20416677

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9902916A SE9902916L (sv) 1999-08-16 1999-08-16 Modulator och integrerad krets

Country Status (4)

Country Link
AU (1) AU6486900A (xx)
SE (1) SE9902916L (xx)
TW (1) TW464917B (xx)
WO (1) WO2001013479A1 (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005398A1 (en) * 2000-07-07 2002-01-17 Telefonaktiebolaget Lm Ericsson Optical device and fabrication thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164622A (ja) * 2000-11-22 2002-06-07 Toshiba Electronic Engineering Corp 半導体光素子
JP4660999B2 (ja) * 2001-08-01 2011-03-30 パナソニック株式会社 光導波路デバイス及びコヒーレント光源及び光学装置
KR100424461B1 (ko) * 2001-09-05 2004-03-26 삼성전자주식회사 전계 흡수 변조형 레이저 모듈을 위한 본딩 패드 및 그 제조 방법
SE0200750D0 (sv) 2002-03-13 2002-03-13 Optillion Ab Method for manufacturing av photonic device and a photonic device
SE0200751D0 (sv) 2002-03-13 2002-03-13 Optillion Ab Method for manufacturing a photonic device and photonic device
KR100493089B1 (ko) * 2002-12-17 2005-06-02 삼성전자주식회사 집적광학장치
GB2419033B (en) 2004-10-08 2009-12-09 Agilent Technologies Inc An integrated modulator / laser assembly and a method of producing same
WO2019026943A1 (ja) * 2017-08-01 2019-02-07 三菱電機株式会社 光半導体素子の製造方法および光半導体素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746065B2 (ja) * 1993-07-29 1998-04-28 日本電気株式会社 光半導体素子の製造方法
US5432123A (en) * 1993-11-16 1995-07-11 At&T Corp. Method for preparation of monolithically integrated devices
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
JP3674806B2 (ja) * 1997-05-01 2005-07-27 日本電信電話株式会社 半導体光導波路機能素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005398A1 (en) * 2000-07-07 2002-01-17 Telefonaktiebolaget Lm Ericsson Optical device and fabrication thereof

Also Published As

Publication number Publication date
TW464917B (en) 2001-11-21
AU6486900A (en) 2001-03-13
SE9902916D0 (sv) 1999-08-16
WO2001013479A1 (en) 2001-02-22

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Legal Events

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