TW459280B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- TW459280B TW459280B TW087104068A TW87104068A TW459280B TW 459280 B TW459280 B TW 459280B TW 087104068 A TW087104068 A TW 087104068A TW 87104068 A TW87104068 A TW 87104068A TW 459280 B TW459280 B TW 459280B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- contact
- edge
- layer
- conductive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 238000003860 storage Methods 0.000 claims abstract description 44
- 239000004020 conductor Substances 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 24
- 230000003628 erosive effect Effects 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 claims 1
- 239000013039 cover film Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 claims 1
- 238000009429 electrical wiring Methods 0.000 claims 1
- 238000009432 framing Methods 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000002079 cooperative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 SrTi〇3 Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- 101100290380 Caenorhabditis elegans cel-1 gene Proteins 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 101100412446 Caenorhabditis elegans rer-1 gene Proteins 0.000 description 1
- 102100031077 Calcineurin B homologous protein 3 Human genes 0.000 description 1
- 101000777270 Homo sapiens Calcineurin B homologous protein 3 Proteins 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003195 fascia Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
- H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29723097A JP3856544B2 (ja) | 1997-10-29 | 1997-10-29 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW459280B true TW459280B (en) | 2001-10-11 |
Family
ID=17843859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104068A TW459280B (en) | 1997-10-29 | 1998-03-19 | Semiconductor device and manufacturing method thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6023083A (enExample) |
| JP (1) | JP3856544B2 (enExample) |
| KR (1) | KR100272989B1 (enExample) |
| CN (1) | CN1104037C (enExample) |
| DE (1) | DE19826689B4 (enExample) |
| TW (1) | TW459280B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6268661B1 (en) * | 1999-08-31 | 2001-07-31 | Nec Corporation | Semiconductor device and method of its fabrication |
| US6074943A (en) * | 1997-04-16 | 2000-06-13 | Texas Instruments Incorporated | Sidewalls for guiding the via etch |
| US6278152B1 (en) * | 1997-06-27 | 2001-08-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| JP3856544B2 (ja) | 1997-10-29 | 2006-12-13 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JPH11186382A (ja) * | 1997-12-19 | 1999-07-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2001036036A (ja) | 1999-07-21 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| KR100558005B1 (ko) * | 2003-11-17 | 2006-03-06 | 삼성전자주식회사 | 적어도 하나의 스토리지 노드를 갖는 반도체 장치들 및 그제조 방법들 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5331116A (en) * | 1992-04-30 | 1994-07-19 | Sgs-Thomson Microelectronics, Inc. | Structure and method for forming contact structures in integrated circuits |
| KR970007967B1 (en) * | 1994-05-11 | 1997-05-19 | Hyundai Electronics Ind | Fabrication method and semiconductor device |
| KR100211070B1 (ko) * | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
| JPH08250589A (ja) | 1995-03-14 | 1996-09-27 | Sony Corp | 半導体装置の製造方法 |
| JP2679671B2 (ja) * | 1995-03-30 | 1997-11-19 | 日本電気株式会社 | 半導体記憶装置の容量素子の製造方法 |
| JPH08306664A (ja) | 1995-05-10 | 1996-11-22 | Sony Corp | 半導体装置の製造方法 |
| US5759911A (en) * | 1995-08-22 | 1998-06-02 | International Business Machines Corporation | Self-aligned metallurgy |
| US5550076A (en) * | 1995-09-11 | 1996-08-27 | Vanguard International Semiconductor Corp. | Method of manufacture of coaxial capacitor for dram memory cell and cell manufactured thereby |
| JP3012187B2 (ja) * | 1996-02-05 | 2000-02-21 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| JP2790110B2 (ja) * | 1996-02-28 | 1998-08-27 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2795252B2 (ja) * | 1996-02-29 | 1998-09-10 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5710074A (en) * | 1996-10-18 | 1998-01-20 | Vanguard International Semiconductor Corporation | Increased surface area of an STC structure via the use of a storage node electrode comprised of polysilicon mesas and polysilicon sidewall spacers |
| US5710075A (en) * | 1996-11-06 | 1998-01-20 | Vanguard International Semiconductor Corporation | Method to increase surface area of a storage node electrode, of an STC structure, for DRAM devices |
| US5731130A (en) * | 1996-11-12 | 1998-03-24 | Vanguard International Semiconductor Corporation | Method for fabricating stacked capacitors on dynamic random access memory cells |
| US5792692A (en) * | 1997-08-18 | 1998-08-11 | Chartered Semiconductor Manufacturing, Ltd. | Method of fabricating a twin hammer tree shaped capacitor structure for a dram device |
| JP3856544B2 (ja) | 1997-10-29 | 2006-12-13 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JPH11176833A (ja) | 1997-12-10 | 1999-07-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JPH11186382A (ja) | 1997-12-19 | 1999-07-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
1997
- 1997-10-29 JP JP29723097A patent/JP3856544B2/ja not_active Expired - Fee Related
-
1998
- 1998-03-19 TW TW087104068A patent/TW459280B/zh not_active IP Right Cessation
- 1998-04-16 US US09/061,060 patent/US6023083A/en not_active Expired - Lifetime
- 1998-05-21 KR KR1019980018300A patent/KR100272989B1/ko not_active Expired - Fee Related
- 1998-06-16 DE DE19826689A patent/DE19826689B4/de not_active Expired - Fee Related
- 1998-07-22 CN CN98116150A patent/CN1104037C/zh not_active Expired - Fee Related
-
1999
- 1999-12-14 US US09/460,764 patent/US6284618B1/en not_active Expired - Lifetime
-
2001
- 2001-04-30 US US09/843,728 patent/US6344406B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1215910A (zh) | 1999-05-05 |
| KR19990036498A (ko) | 1999-05-25 |
| DE19826689A1 (de) | 1999-05-12 |
| KR100272989B1 (ko) | 2000-12-01 |
| CN1104037C (zh) | 2003-03-26 |
| DE19826689B4 (de) | 2005-03-31 |
| JP3856544B2 (ja) | 2006-12-13 |
| US20010023122A1 (en) | 2001-09-20 |
| US6023083A (en) | 2000-02-08 |
| JPH11135746A (ja) | 1999-05-21 |
| US6344406B2 (en) | 2002-02-05 |
| US6284618B1 (en) | 2001-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |