TW446742B - Lead frame moisture barrier for molded plastic electronic packages - Google Patents
Lead frame moisture barrier for molded plastic electronic packages Download PDFInfo
- Publication number
- TW446742B TW446742B TW089105158A TW89105158A TW446742B TW 446742 B TW446742 B TW 446742B TW 089105158 A TW089105158 A TW 089105158A TW 89105158 A TW89105158 A TW 89105158A TW 446742 B TW446742 B TW 446742B
- Authority
- TW
- Taiwan
- Prior art keywords
- molding
- wire
- alloy
- item
- adhesive
- Prior art date
Links
- 239000002991 molded plastic Substances 0.000 title claims description 6
- 230000004888 barrier function Effects 0.000 title description 6
- 230000001070 adhesive effect Effects 0.000 claims abstract description 34
- 239000000853 adhesive Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000000465 moulding Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000004033 plastic Substances 0.000 claims abstract description 3
- 229920003023 plastic Polymers 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 239000012815 thermoplastic material Substances 0.000 claims description 7
- 229910000531 Co alloy Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001746 injection moulding Methods 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- 238000001721 transfer moulding Methods 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 2
- 229910000805 Pig iron Inorganic materials 0.000 claims description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 claims description 2
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000788 chromium alloy Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229920001021 polysulfide Polymers 0.000 claims description 2
- 239000005077 polysulfide Substances 0.000 claims description 2
- 150000008117 polysulfides Polymers 0.000 claims description 2
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims 3
- 229920000106 Liquid crystal polymer Polymers 0.000 claims 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims 1
- 229910000691 Re alloy Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 claims 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims 1
- 238000007791 dehumidification Methods 0.000 claims 1
- 229920001643 poly(ether ketone) Polymers 0.000 claims 1
- 229920002492 poly(sulfone) Polymers 0.000 claims 1
- 239000012812 sealant material Substances 0.000 claims 1
- 235000015170 shellfish Nutrition 0.000 claims 1
- 238000005382 thermal cycling Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 7
- 229920001169 thermoplastic Polymers 0.000 description 7
- 239000004416 thermosoftening plastic Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000002079 cooperative effect Effects 0.000 description 5
- 239000000454 talc Substances 0.000 description 5
- 229910052623 talc Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 C19010 Copper-tin alloy Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
- 229920002098 polyfluorene Polymers 0.000 description 3
- 229920003319 Araldite® Polymers 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- XJIIVPNKKQIVGX-UHFFFAOYSA-N [Fe].[Cu].[Cu] Chemical compound [Fe].[Cu].[Cu] XJIIVPNKKQIVGX-UHFFFAOYSA-N 0.000 description 1
- ZUPBPXNOBDEWQT-UHFFFAOYSA-N [Si].[Ni].[Cu] Chemical compound [Si].[Ni].[Cu] ZUPBPXNOBDEWQT-UHFFFAOYSA-N 0.000 description 1
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 230000037228 dieting effect Effects 0.000 description 1
- YOBCTIIWHLYFII-UHFFFAOYSA-L difluorotitanium Chemical compound F[Ti]F YOBCTIIWHLYFII-UHFFFAOYSA-L 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010107 reaction injection moulding Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Casings For Electric Apparatus (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Specific Sealing Or Ventilating Devices For Doors And Windows (AREA)
Description
經濟部智慧財產局員工消費合作社印製 4 4 6 7 4 2 A7 -__B7____ 五、發明說明(1 ) 本發明係關於電子封裝的領域》本發明包括將積趙電 路晶粒放入保護晶片免於接觸環境並且使在外面的導線得 以電性存取晶粒電路的中空密封艘。更定言之本發明係 關於做為屏障以抵抗濕氣侵入及一般氣體污染的密封體。 發明背景 電子封裝體係做為晶粒的保護密封體,而又在晶粒電 路及載具上電路或例如印刷配線板的基板之間作電氣連接 之用。本發明提出的封裝髋係為中空體,其完全包覆晶粒 並且最初形成將電導線或’’線道”包在壁中的開放式插座。 一旦將導線包在壁中形成插座,則將晶粒放入插座裡面並 且與導線電氣接合《然後將插座封閉並且密封以進一步處 理’包括進一步電氣連接及使用。 為了達到目前用在晶粒内極精細電路線極高電流密度 的一致的且可靠的功效’必須防止水蒸氣及其他大氣氣體 在一密封時進入封裝體。藉由密封晶粒並且保護晶粒避免 暴露於這些氣艘中’封裝體使晶粒在潮濕及其它可能有害 之環境中的功效提升。在晶粒及封裝體外組件之間電氣連 接的導線係為細長的金屬條,該金屬條通過封裝體壁,金 屬條較細的一端與晶粒電路接合而另一端則可用來與基板 電路接合。因為金屬條與封裝體壁是由不相同的材料做成 ’所以很難在它們之間形成做為蒸汽屏障的安全帶。這個 困難在材料的膨脹收縮率相差甚大時特別明顯。膨脹及收 縮係隨著處理步驟’例如晶粒接合期間封裝體遭遇到的熱 循環溫度變化而發生。溫度變化也發生在典型的環境中, 本紙張尺度適用中國國豕標準(CNS)A4規格(210 X 297公爱) I---i--------訂---------線 {請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印*''农 Α: Β7 五、發明說明(2 ) 其中所用的封裝體也與晶粒本身的高電流密度反向變化。 結果’導線穿透封裝體壁的位置點將容易形成氣體可以進 入封裝體並且污染晶粒的間隙。 將金屬導線及封裝體壁間之界面密封的典型方法係為 藉由直接在導線上模製壁而形成封裝體。典型使用射出成 型或轉移成型,開始時利用在模製程序期間固化或在後固 化時迅速固化的已熔融可熱固化樹脂。這些模製技術係在 金屬及塑膠之間形成機械性結合,由於上述的理由,該機 械性結合對於接受高電流密度的封裝體而言發揮的功效較 不完全。此外’在這些方法裡’模製工具典型控制在100〇c 到1 75°C ’然而導線之金屬表面的溫度較低許多。溫度差 會抑制已熔融樹脂的固化t並且進一步使結合的強度變弱 。滲漏的其它來源可能來自做為模製化合物的典型樹脂本 身具有黏著性質並因此需要脫模劑以防止其黏在模製工具 上。典型的脫模劑係為微晶壤,其係併入模製化合物配方 中。脫模劑不幸地也使模製化合物及金屬導線之間的結合 強度變弱。 先前未被使用或被本發明人揭示的解決方法可能只是 將整個引線框在導線上模製封裝體之前塗上黏著劑化合物 ,使得黏著劑將在模製化合物固化時,於導線及模製化合 物之間形成化學鍵結。該解決方法的困難在於必須在導線 與晶粒之間的電性連接的決定性本質。結合位置處之導線 的表面上任何污染將會干擾產生可靠電氣連接的線結合程 序。該情況只能夠藉由模製操作已經完成後利用昂貴且 本纸張尺度遇用111國國家標準(CNSM4規格(210 χ 297公爱) -----------裝-----丨—丨訂_-------•線 (請先Μ讀背面之注意事項再填寫本頁) 4467 4 2 A7 B7 五、發明說明(3) 難的清潔程序來避免。導線裡的這個問題更惡化’因為導 線要鍍上導電性材料,例如銀或金以提升與晶粒的電氣接 {請先Μ讀背面之注意事項再填寫本I) 觸。 發明概述 上述之問題可根據本發明解決,其係藉由選擇性地將 可熱固化之黏著劑塗在與封裝壁接觸之導線表面上的區域 。黏著劑因此可藉由模製程序本身或在後固化封裝體期間 固化。黏著劑係為一旦固化即在導線及封裝體之間的界面 形成幾乎不透氣密封體的材料。最佳黏著劑或黏著劑組合 的選擇將反映出差異程度,如果導線金屬及封裝體的熱膨 胳係數有差異的話》黏著劑可以包括視需要使用的熱塑性 組份’其在熱膨脹係數有差異時提供密封體彈性。將黏著 劑局部塗在金屬上的這些區域而形成界面,將能夠保持導 線及晶粒電路之間的電氣接觸強。 本發明這些及其他目的,特徵及優點可從下列說明更 清楚明白。 發明内容及較佳具體實施例的詳細說明 經濟部智慧財產局員工消費合作社印製 如上所述,黏著劑或黏著劑組成物的最佳選擇將視電 導線及封裝體所用的材料而定。每一種可以使用各種材料 ’此等材料有許多已揭示於電子材料的公開文獻並且廣為 所知® ..可供導線使用的金屬實例(其符號如Minges, Μ· L.,等 人編輯,Ohio, Material Park,ASM International 公司在 1989 年出版的電子材料參考手冊第I冊所示)為: 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 6 經濟部智慧財產局員工消費合作社印装 A7 --------- 五'發明說明(4) 銅 銅-鐵合金:CI9400,C19500,C19700,C19210 銅-鉻合金:CCZ,EFTEC647 銅-鎳-矽合金:C7025,KLF 125,C19010 銅·錫合金:C50715,C50710 銅-锆合金:C15100 銅-鎂合金:C15500 鐵-鎳合金:ASTMF30(合金42) 鐵-鎳-鈷合金:ASTMF15(Kovar) 生鐵 鋁 這些之中,較佳者為銅,銅組成至少95重量%的含銅 合金,鐵組成為大約50到大約75重量%的鐵·鎳合金,及 鐵組成為大約50%到大約75重量%的鐵-鎳-鈷合金。鐵· 鎳合金 Alloy 42(58%Fe,42%Ni)及鐵-鎳·鈷合金 K〇var(54 %?6,29%>^’17%€:〇)以及各種銅合金特別有利。 可以做為封裝體之材料’或密封體材料的種類包括熱 固性及熱塑性材料二種=> 熱塑性材料的實例係為環氧樹脂 及經改質的環氧樹脂,聚胺基甲酸酯,聚亞醞胺,經改質 的聚亞醯胺’聚酯,及矽酮。熱塑性材料的實例為聚硫化 本,液SB 5«•合物,聚藏,及聚喊明。熱塑性材料血型g由 轉移模製方法模製’然而熱塑性材料典型藉由射出成型模 製’雖然每一種都可以使用不同的模製方法。 這些材料的重要參數,以及影響黏著劑使用之選擇的 I » I I 丨. 1 —It ' — — till— ----- - — I» 先閱讀背面之注意事項再填寫本I)
4 46 7 4 2 a: _______B7__ 五、發明說明(5 ) 參數為熱膨張係數(“CTE”)’以每攝氏溫度ppm(重量)為其 單位。CTE隨著所用的材料而變動,導線的CTE範圍可能 與封裝體(模製的塑勝密封體)材料的CTE範圍重疊。然而 ,在本發明之一具體實施例裡,這些範圍不重疊"例如, 引線框(包括導線)的CTE範圍可以為大約5 ppm/°C到大約 15 ppm/°C ’而封裝體材料在固化時的CTE範圍為大約16 ppmPC到大約50 ppm/°C»或者是,引線框材料的CTE與 封裝體的CTE可能相差至少大約1〇 ppm/cc,或相差最大 值約100 ppmrc ’或相差大約2〇ppm/°C到大約50 ppm/°C 。由於CTE值的差異’黏著劑組成物較佳包含熱塑性組份 ’做為黏著劑成份或與熱固性黏著劑成分混合的混合物。 適合單獨或混合使用做為黏著劑之特別樹脂的實例如 下: 熱固性樹脂: D.E.R. 332 :具雙盼A的環氧樹脂(Dow Chemical Company,Midland,Michigan,USA) ARALDITE® ECN 1273 :環氧甲酚酚醛樹脂(Ciba-Geigy Corporation) ARALDITE® MY 721 :多官能基液態環氧樹脂 (Ciba-Geigy Corporation) QUARTEX® 1410 :具雙酚A的環氧樹脂(Dow Chemical Company) EPON® 828,1001F,58005 :經改質的雙酚A環氧 樹脂(Shell Chemical Company, Houston, Texas, USA) 本紙張尺度適闬中國國家標準(CNS)A4規格(210 X 297公釐) <請先閱讀背面之注帝?事項再填寫本頁) ---.1訂/--------線 經濟部智慧財產局員工消費合作杜印製
AT 五、發明說明(6 ) 熱塑性樹脂:
Phenoxy PKHJ :笨氡樹脂(Phen〇xy Associates) Polysuifone 黏著劑組成物視需要地包括—或多種成分以提供組成 物各種所需的性質。所包含的成分的實例為多元胺,聚醖 胺,多酚,聚硫醇,聚碳酸,酐,二氱基二醯胺,氱基脈 ’咪唑,及路易士酸’例如三氟化硼與胺或醚的錯合物。 防沬劑的實例為疏水性氣化矽,例如矽輞樹脂及矽烷,碳 氟化物,例如聚四氟乙烯,脂肪酸醯胺,例如乙二胺硬脂 酿胺’硫酿胺,碳氫化合物堪,及固態脂肪酸和酯類。濕 氣取得劑的實例為經活化的氧化鋁及活性碳。做為濕氣取 知劑的特定產物為供應商(Alpha Metals of Jersey City.
New Jersey’ USA)的商品GA2000-2,SDl〇〇〇及 SD800。填 料的實例為氧化鋁,二氧化鈦,炭黑,碳酸鈣,高嶺土, 雲母,氧化矽’滑石,及木粉。 形成封裝體的模製方法已為大眾所知並且廣為使用, 因此,在本專利說明書裡不再詳細討論。然而,一般而言 ’在包括一系列以網連接並且分組放置之金屬導線的引線 框上進行模製’每個封裝體有一組金屬導線,相鄰的金屬 導線組進一步藉由在完成模製後移除的網連接。組合也包 含沿著導線在某幾個位置設置的屏障,做為供助於抑制的 機械停機’這些屏障也在經模製之封裝體分離前移除。視 所用的材料選擇使用傳統的模製技術,例如射出成型,轉 移成型’插入成型及反應-射出成型。 本π張尺度適用中國國家標準(CNS)A4規格<210 X 297公爱) --------------裝--- (請先Μ讀背面之注意事項再填寫本頁) 訂· •-線 經濟部智慧財產局員工消費合作社印¾ 9 446 7 4 2 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(7 ) 將黏著劑塗在引線框上對應封裝密封體之模製塑膠會 接觸到導線的特定位置上。可以將黏著劑塗在引線框的一 側或兩側,視系統的特別需要而定。塗敷的方法將只用在 需要的區域上’以實質地避免黏著劑年在沒有被封裝體壁 包圍的區域上。這種局部塗敷可以利用傳統的印刷或壓印 方法達成’或較佳根據美國專利第5,816,158號,,反轉壓印 方法”(發明人為Richard J. Ross, 1998年10月6日公告)所揭 示之程序及裝置進行反轉壓印,該案在此以參考方式併入 本案。 下列的實施例僅供說明之用。 實施例 下列為代表熱固性配方,熱塑性配方,及二者之各種 組合的黏著劑配方的實例。 1.環氧樹脂熱固性黏著劑 組份 重量份數 EP0N 828 25 EPON 1001F 50 Dicy CG1400(氰基脈) 5 滑石 5 二氡化鈦 5 Cab-0-Sil⑧M5(發煙氧化矽) 10 2.笨氧樹脂熱塑性黏著劑 組份 重量份數 Phenoxy PKHJ 95 滑石 3 Cab-O-Sil® M5 2 本紙張尺度適闬中國國家標準(CNS)A4規格(210 X 297公发) 10 — ml----I ^ ---ml — ^ *nlllli!^ * ί ί請先閱讀背面之注意事項再填寫本頁) Α7 Β7 五、發明說明(8 ) 3.聚颯熱塑性黏著劑 組份 重量份數 聚颯(分子量= 20,000) 95 二氧化鈦 5 4.複合型環氧樹脂/笨氧樹脂黏著劑(結合熱固性及熱塑性): 組份 重量份數 EPON 828 45 Phenoxy PKHJ 45 Dicv CG1400 3 滑石 5 炭黑 2 5.複合型環氧樹脂/苯氧樹脂黏著劑(結合熱固性及熱塑性): 重量份數 D.E.R. 332 30 聚颯(分子量=20,000) 60 Dicv CG1400 2 滑石 4 Cab-O-Sil® M5 Δ --------------裝·-------訂------— II 線 ί請先閱讀背面之注辛?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 上述具體實施例主要供說明之用。熟悉此項技藝者很容易 根據上述說明而對在此所述之方法的材料,程序’條件及 其匕參數作部分變更或修改,卻不脫離本發明之精神範嘴 ,因此,本發明之專利範圍僅由附錄之申請專利範圍加以 限定。 本纸張尺度適用中國國家標準(CNS)A4規格mo 297公釐) 11
Claims (1)
- 446742 | _Da 申請專利範圍 公告本 經濟部智慧財產局貝工消費合作社印製 L 一種形成模製塑膠密封艘的方法,該模製塑膠密封體 由導電性金屬導線穿透以存取晶粒,使晶粒被該密封 體的模製壁密封在該密封體裡該導線附近,改良的部 分包括: (a) 將可熱固化的黏著劑選擇性地塗在該導線表面 上會在模製時接觸該密封體的區域, (b) 以其上之該可熱固化黏著劑模製該導線附近的 該密封體壁,及 (c) 在模製該密封體壁期間或之後固化該可熱故化 的黏著命J, 選擇該可熱固化的黏著劑,使得在固化時以可透氣方 式密封該導線附近的該密封體壁。 2. 如申請專利範圍第1項之方法,其中該可熱固化黏著劑 係為選自由熱固性樹脂,熱塑性樹脂,及熱固性和熱 塑性樹脂混合物所組成的族群。 3. 如申請專利範圍第丨項之方法,其中該可熱固化的黏著 劑係為環氧樹脂和熱塑性樹脂的混合物。 4·如申請專利範圍第1項之方法,其中該金屬導線為銅, 銅-鐵合金,銅-鉻合金,銅·鎳_矽合金’銅_錫合金, 鋼-鍅合金,銅-鎂合金,鐵_鎳合金,鐵_鎳_鈷合金, 生鐵,或鋁。 5-如申清專利&圍第1項之方法,其中該塑勝密封體係由 熱固性塑勝开》成及(b)包括II由轉移模製方法模製該密 封體壁。 ϋ I ϋ n ϋ ϋ I ϋ I, ^ - ^1 n n ϋ If t— n n I (請先閱讀背面之注#?^項再填寫本頁> 本紙張尺度遇用中囡园家进技 w <r - ! w ΐί / a 2 1 A8B8C8D8 六、申請專利範圍 ' 6.如申請專利範圍第】項之方法,其中該塑移密封體由熱 塑性材料形成及⑻包括藉由射出成型模製該密封想壁 〇 7·如申。奢專利範圍第6項之方法,其中該熱塑性材料為聚 硫化苯,液晶聚合物,polysulfone,或聚醚酮。 8. 如申清專利範圍第1項之方法,其中該導線及該模製塑二 膠密封體材料在固化時的熱膨脹係數彼此相差至少欠 ,10 ppm/0c。 9. 如申請專利範圍第丨項之方法,其中該導線鍍上銀或金 □ 10. 如申請專利範圍第1項之方法,其中該可熱固化黏著劑 包括其中分散著去濕的樹脂。 ^--------^---------^ 先閱磧背面v項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 尽紙張尸、度適用由园國家標隼(CNs);y規格(21〇 X 29Γ公芨) 13
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Family
ID=23044680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089105158A TW446742B (en) | 1999-03-22 | 2000-03-23 | Lead frame moisture barrier for molded plastic electronic packages |
Country Status (15)
Country | Link |
---|---|
US (1) | US6214152B1 (zh) |
EP (1) | EP1171911A1 (zh) |
JP (1) | JP4351809B2 (zh) |
KR (1) | KR100605328B1 (zh) |
CN (1) | CN1146975C (zh) |
AP (1) | AP1317A (zh) |
AU (1) | AU3912500A (zh) |
CA (1) | CA2372172C (zh) |
FI (1) | FI20011860A (zh) |
HK (1) | HK1044224B (zh) |
IL (2) | IL145050A0 (zh) |
MX (1) | MXPA01009488A (zh) |
NO (2) | NO326807B1 (zh) |
TW (1) | TW446742B (zh) |
WO (1) | WO2000057466A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003139593A (ja) * | 2001-11-07 | 2003-05-14 | Hitachi Ltd | 車載電子機器および熱式流量計 |
SG157957A1 (en) * | 2003-01-29 | 2010-01-29 | Interplex Qlp Inc | Package for integrated circuit die |
US6900525B2 (en) * | 2003-05-21 | 2005-05-31 | Kyocera America, Inc. | Semiconductor package having filler metal of gold/silver/copper alloy |
US20050048349A1 (en) * | 2003-08-28 | 2005-03-03 | Fannon Megan A. | Method of manufacturing a fuel cell array and a related array |
US6913493B2 (en) * | 2003-11-05 | 2005-07-05 | Molex Incorporated | Sealed electrical connector assembly and method of fabricating same |
US7821129B2 (en) * | 2004-12-08 | 2010-10-26 | Agilent Technologies, Inc. | Low cost hermetic ceramic microcircuit package |
JP5046366B2 (ja) * | 2005-10-20 | 2012-10-10 | 信越化学工業株式会社 | 接着剤組成物及び該接着剤からなる接着層を備えたシート |
US8560104B2 (en) * | 2009-10-14 | 2013-10-15 | Stmicroelectronics, Inc. | Modular low stress package technology |
JP6210922B2 (ja) * | 2014-04-04 | 2017-10-11 | アルプス電気株式会社 | 電子部品 |
CN106132660A (zh) * | 2014-04-04 | 2016-11-16 | 阿尔卑斯电气株式会社 | 电子部件的制造方法 |
US10115605B2 (en) * | 2016-07-06 | 2018-10-30 | Rjr Technologies, Inc. | Vacuum assisted sealing processes and systems for increasing air cavity package manufacturing rates |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US3911475A (en) * | 1972-04-19 | 1975-10-07 | Westinghouse Electric Corp | Encapsulated solid state electronic devices having a sealed lead-encapsulant interface |
JPS63184357A (ja) * | 1987-01-26 | 1988-07-29 | Japan Aviation Electronics Ind Ltd | インサート成形部品の端子保持方法 |
US5205036A (en) * | 1988-10-17 | 1993-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with selective coating on lead frame |
JPH02133932A (ja) * | 1988-11-14 | 1990-05-23 | Polyplastics Co | プレモールドパッケージとその製造方法 |
JPH088320B2 (ja) * | 1988-12-23 | 1996-01-29 | ポリプラスチックス株式会社 | プレモールドパッケージとその製造方法 |
DE69131784T2 (de) * | 1990-07-21 | 2000-05-18 | Mitsui Chemicals Inc | Halbleiteranordnung mit einer Packung |
US5122858A (en) * | 1990-09-10 | 1992-06-16 | Olin Corporation | Lead frame having polymer coated surface portions |
US5244707A (en) * | 1992-01-10 | 1993-09-14 | Shores A Andrew | Enclosure for electronic devices |
US5458716A (en) * | 1994-05-25 | 1995-10-17 | Texas Instruments Incorporated | Methods for manufacturing a thermally enhanced molded cavity package having a parallel lid |
US5817544A (en) * | 1996-01-16 | 1998-10-06 | Olin Corporation | Enhanced wire-bondable leadframe |
JPH1041423A (ja) * | 1996-07-22 | 1998-02-13 | Sony Corp | 半導体パッケージの製造方法 |
US5816158A (en) * | 1996-10-10 | 1998-10-06 | Rjr Polymers, Inc. | Inverted stamping process |
US5785791A (en) * | 1997-05-05 | 1998-07-28 | Motorola, Inc. | Method of manufacturing semiconductor component |
DE19731424C1 (de) * | 1997-07-22 | 1998-08-13 | Daimler Benz Ag | Verfahren zum Einbetten von metallischen Leitern mikroelektronischer Bauelemente in eine Kunststoffmasse |
-
1999
- 1999-03-22 US US09/273,608 patent/US6214152B1/en not_active Expired - Lifetime
-
2000
- 2000-03-22 JP JP2000607260A patent/JP4351809B2/ja not_active Expired - Lifetime
- 2000-03-22 CA CA002372172A patent/CA2372172C/en not_active Expired - Lifetime
- 2000-03-22 EP EP00918292A patent/EP1171911A1/en not_active Ceased
- 2000-03-22 IL IL14505000A patent/IL145050A0/xx active IP Right Grant
- 2000-03-22 KR KR1020017011849A patent/KR100605328B1/ko active IP Right Grant
- 2000-03-22 WO PCT/US2000/007710 patent/WO2000057466A1/en active IP Right Grant
- 2000-03-22 AP APAP/P/2001/002271A patent/AP1317A/en active
- 2000-03-22 MX MXPA01009488A patent/MXPA01009488A/es active IP Right Grant
- 2000-03-22 CN CNB008051054A patent/CN1146975C/zh not_active Expired - Lifetime
- 2000-03-22 AU AU39125/00A patent/AU3912500A/en not_active Abandoned
- 2000-03-23 TW TW089105158A patent/TW446742B/zh not_active IP Right Cessation
-
2001
- 2001-08-22 IL IL145050A patent/IL145050A/en not_active IP Right Cessation
- 2001-09-18 NO NO20014533A patent/NO326807B1/no not_active IP Right Cessation
- 2001-09-21 FI FI20011860A patent/FI20011860A/fi not_active Application Discontinuation
-
2002
- 2002-08-07 HK HK02105774.9A patent/HK1044224B/zh unknown
-
2008
- 2008-05-20 NO NO20082268A patent/NO20082268L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN1344425A (zh) | 2002-04-10 |
CA2372172C (en) | 2009-10-27 |
CN1146975C (zh) | 2004-04-21 |
IL145050A (en) | 2006-12-10 |
JP2002540600A (ja) | 2002-11-26 |
MXPA01009488A (es) | 2003-08-19 |
US6214152B1 (en) | 2001-04-10 |
NO326807B1 (no) | 2009-02-16 |
IL145050A0 (en) | 2002-06-30 |
NO20014533L (no) | 2001-09-18 |
JP4351809B2 (ja) | 2009-10-28 |
FI20011860A (fi) | 2001-09-21 |
KR100605328B1 (ko) | 2006-07-28 |
CA2372172A1 (en) | 2000-09-28 |
KR20020010895A (ko) | 2002-02-06 |
AP2001002271A0 (en) | 2001-09-30 |
EP1171911A1 (en) | 2002-01-16 |
HK1044224B (zh) | 2004-12-31 |
AP1317A (en) | 2004-10-19 |
NO20082268L (no) | 2001-09-18 |
WO2000057466A1 (en) | 2000-09-28 |
AU3912500A (en) | 2000-10-09 |
NO20014533D0 (no) | 2001-09-18 |
HK1044224A1 (en) | 2002-10-11 |
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Legal Events
Date | Code | Title | Description |
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GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |