TW434759B - Thermally enhanced flip chip package and method of forming - Google Patents

Thermally enhanced flip chip package and method of forming Download PDF

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Publication number
TW434759B
TW434759B TW085113991A TW85113991A TW434759B TW 434759 B TW434759 B TW 434759B TW 085113991 A TW085113991 A TW 085113991A TW 85113991 A TW85113991 A TW 85113991A TW 434759 B TW434759 B TW 434759B
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Taiwan
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flip
thermally conductive
chip
substrate
planar member
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TW085113991A
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English (en)
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Eric Arthur Johnson
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Ibm
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L23/4334—Auxiliary members in encapsulations
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/73253—Bump and layer connectors
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    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

4347S9 Α7 Β7 經濟部中央橾準局負工消费合作杜印«. 五、發明説明（1 ) 技術領域 一般而言，本發明係有關於各種封裝後之覆晶，特別有 關於具有導熱構件的覆晶封裝，而且該構件被覆晶包封》 習知技藝 覆晶是小的半導體晶粒（die)，而該晶粒的一邊具有多個 端子’而該等端子的形式為序塾（solder pad)或凸起式接 點°通常，晶片的表面已被鈍化或作過其他處理。覆晶的 名稱來源為：在製完後準備將晶片附著在與之配合的基板 之前，將晶片翻覆或反轉過來。 覆晶封裝需要某種型式的罩子罩住矽晶片來保護它並提 供大的平坦表面以便進行隨選即放作業。然而，晶片上的 任何罩子或包封物會增加逸散到周圍環境的熱阻路徑以及 晶片的作業溫度。· 多種導熱的罩子也已經提出給覆晶使用。通常，覆有罩 子的晶片具有薄薄一層的導熱油膏於晶片及罩子之間。然 而，吾人發現在熱循環期間，該油膏不是傾向於堆積起 來，不然就是會偏離晶片與罩子之間的介面，因此會增加 該介面之熱阻抗。 本發明是用來克服上述的問題》吾人期望得到一種能提 供低熱阻抗且製造便宜的覆晶封裝。吾人也希望得到一種 能利用習用轉移模塑技術的覆晶封裝及製造方法。吾人尚 希望得到一種不需要將導熱油膏放在晶片與導熱構件之間 • 4 - 本紙張尺度適用中國國家揉準（CNS ) Α4規格（210Χ297公釐） --------C I裝------訂-----「線 (請先聞讀背面之注意事項再填寫本頁) 434759 A7 B7 五、發明説明（2 的覆晶封裝 M濟部中央橾準局—工消费合作社印製 發明總結 根據本發明的第-個特徵，覆晶封裝包含：—基板，其 内具有複數個電路；一覆晶，裝在該晶片上且與配置在該 基板内的該等電路中之既定電路導通；以及一導熱平面式 構件，其與該覆晶的上表面作導熱式接觸。該覆晶封裝也 包含實質上硬（Rigid)的介電材料，此材料環繞在導熱平面 型構件的邊緣表面，覆晶的邊緣表面，及以該基板的至少 一部分。 禮現本發明的覆晶封裝的其他特徵為導熱的平面型構 件*此構件的厚度被選擇成能提供具有覆晶的複合型結 構，該晶片可在基板上延伸一段既定距離。 根據本發明的另一個特徵，形成散熱改善型的覆晶封裝 之方法包括提供一基板及一覆晶，該基板與該晶片係連接 在一起使得在該晶片上的電接點與在該基板上的電接點的 既定幾個接點接觸。此方法也包括提供導熱的平面式構 件’此構件係放在該晶片的上表面且可與之作熱傳遞。該 组合後之平面式構件、覆晶及基板係放在一模穴中，其中 一既定部分的基板會共同形成一實質上封閉的穴。可模製 的介電材料係射入該封閉的模穴中，而且在硬化之後，形 成一層實質上剛硬的罩子而覆蓋在導熱的平面式構件邊 緣、該晶片上、該基板的既定部分上。 本紙張尺度遑用中圃國家標準（CNS ) A4規格（2丨0X297公釐） --------C-裝-----丨訂-----Γ線 <請先閲讀背面之注意事項再填寫本頁) 434789 經濟部中央棣準局負工消費合作社印製 A7 B7 五、發明説明（3) 形成散熱改善的覆晶封裝的方法之其他特徵包括：選用 導熱的平面式構件，此構件的厚度係選擇成當此構件被放 在該晶片上時，該構件的組合厚度及該晶片在基板表面上 -的延伸距離實質上等於前述模穴的高度。 圖式簡要說明 圖1 A係根據本發明第一實施例之覆晶封.裝的示意剖面 圖，該圖係顯示該封裝的覆晶及基板元件的前視圖及於導 熱平面構件及覆晶之間之介電材料； 圖1 B係根據本發叼第二實施例之覆晶封裝的示意剖面 圖’該圖係顯示該封裝的覆晶及基板元件的前視圖及於導 熱平面構件及覆晶之間之黏性材料；以及 圖2係本發明之用以形成覆晶封裝的主要步驟的流程圖。 較佳實施例的詳細敌述 圖1A及1B顯示本發明之覆晶封裝1〇。該封裝1〇包括一 覆晶1 2 ’此晶片有複數個接點1 4，這些接點可用軟焊的接 · , 頭而電性連接至一基板構件16中的至少一個電路相關的對 應接點。該構件16通常是層化的電路板，此電路板具有定 義在該構件内的多個電路而且可適於與其他電子組合禮的 元件相互連接。該晶片12具有：平面式的上表面is，此表 面與基板16隔著一既定距離；以及複數個邊緣表面2〇，此 等表面係延伸在該平面式表面18的既定週邊且配置成與該 表面1 8成實質垂直的關係。 -6 - 本紙張尺度適用中國國家標準（CNS ) A4规格（210><297公釐） --------Γ*裝— (請先閲讀背面之注意事項再填寫本頁)
•1T 線 434759 M濟部中央搮準扃貝工消费合作社印製 A7 B7 五、發明説明（4 ) 很重要的是，本發明的散熱改善型覆晶封裝10包括導熱 的平面式構件22，此構件被配置成與該晶片12的平面式上 表面18作熱傳遞。該導熱平面式構件22具有複數個邊緣表 面24，此等表面圍繞在平面式構件2 2的週圍。 本發明之散熱改善型覆晶也包括實質上剛硬的介電材料 26，例如：東芝（Toshiba) XK6000TM熱硬性（thermoset)塑 膠’該材料密接環繞著：導熱的平面式構件22的邊緣表面 24、該覆晶12的邊緣表面20、以及至少一部分層化的基板 16。該介電材料26有效地包封住該覆晶12以及該等平面式 構件22與基板16的一部分，而沒有蓋住該導熱的平面式構 件22的上曝露表面· 在本發明的實施例中’吾人希望以轉移模塑技術來製造 該覆晶封裝10。為了減少要容納各種尺寸之模的數目，導 熱的平面式構件22可從一片板子中衝壓（Stamp)成形，其 厚度可多種且成本很低*藉由使用適當厚度的平面式構件 22 ’各種厚度的晶片可容納在單一個模中。例如，在安裝 於晶片12的頂上時，吾人期望導熱的平面構件22之厚度選 成能提供複合的結構，此結構在該基板構件16上延伸一既 定的距離。因此，藉著簡單改變平面式構件22的厚度，相 同的模穴可用於各種尺寸的晶片12。 在較佳實例中，如圖1A所示，在將附於基板構件16的覆 晶12插入該模穴之前，先將導熱平面構件22放入模穴，之 --------r-裝------訂-----f線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央搮準局貝工消费合作社印製 43^7 5 9 - a7 B7 五、發明説明（5) 後，再將介電材料26射入模穴中。或者，如圖1B所示，導 熱的平面式構件22可藉由導熱的黏性材料28來與該覆晶12 的上表面18預先結合，其係在將該結合的組合體放入模穴 内並將介電材料26射入模穴前。 最好，導熱的平面構件22是銅，它的熱膨脹係數實質上 等於層化的玻璃環氧樹脂印刷電路板的熱膨脹係數。 本發明之形成改善的覆晶封裝10之方法包含提供一基板 構件16，此構件具有複數個配置於基板構件上表面的電氣 接點，如圖2中的方塊30所示，而且此方法也提供一覆晶 12，此晶片具有複數個配置在下表面上的電氣接點14，如 方塊3 2所示*覆晶1 2係附接至基板構件16，如方塊34所 示，而其附接通常是用軟焊互連線所用之加熱循環法。如 果有需要，例如德斯特（Dexter)的HYSOL™ 45 11環氧樹脂 之底部填充材料可用來提供連接起來之接點間的電氣隔 絕。 導熱的平面式構件22最好是銅板且如方塊36所示，然後 放在覆晶12的上表面18，以便平面式的構件22與覆晶12的 上表面作熱傳遞，如方塊38所示，其傳遞是藉密接方式或 黏性劑而接至上表面1 8。 對正的導熱平面構件22、覆晶12以及基板構件16係放在 模穴中，如方塊4 0所示。一部分基板構件1 6 (亦即圍繞在 安裝好的覆晶12週圍的中間區域）可與模穴的其他既定表面 -8 - 本紙》尺度適用中國國家標準（CNS >八4規格（210X297公釐） --------_裝||1---訂-----「線 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央樣準局負工消费合作社印製 434759 A7 B7 五、發明説明（6) 共同作用以形成實質上封閉的穴。可模製的介電材料，例 如高填充後的環氧樹脂，會被射入轉移模中，如方塊42所 示，並且環繞在平面式構件22及覆晶12的邊緣表面24。如 圖1A及1B所示，介電材料26也被壓迫進入以與導熱構件 22的一部分下表面及該基板構件16表面的週圍區域密接， 如此可有效地以基板構件16包封住覆晶12及導熱的平面式 構件22。 在硬化可模製的介電材料26之後，如方塊44所示，實質 上剛硬的介電覆蓋層會形成在導熱的平面構件22、該覆晶、 12、該基板構件16的既定部分上，藉此提供整體式的或不 可分離式的封裝10 »在硬化之後，成形後的封裝1〇可從該 模移除，如方塊4 6所示》 最好，在執行形成散熱整體式覆晶封裝1〇的方法時，單 —模穴用於各種不同尺寸的覆晶12，其尺寸是改變該平面 式構件22的厚度而來。假如尺寸正確，就不會有介電材料 在平面式的構件22之上曝露表面之上。吾人希望覆晶12來 的導電路徑在熱流路徑中具有最少的介面阻抗。因此，吾 人希望控制平面式構件22的厚度，以便它的上表面與表面 加工過的部分上之模化合物的表面同高。在此種排列中， 不需要在導熱的平面構件22與覆晶12之間加黏性材料，雖 然導熱的黏性材料28在有需要時可以使用作為組合輔助 劑〇 -9- 本紙張尺度適用中國國家揉準（CNS ) M规格（2丨〇><297公釐> --------Γ -裝------訂-----Γ線 (請先閲讀背面之注意事項再填寫本頁) 4Ι4?§| 經濟部中央標準局負工消费合作社印掣 A7 __B7 五、發明説明（7 ) 總之’該覆晶的排列及其形成法可提供性能可靠且容易 製造的覆晶封裝ίο。這些目的可藉由使用轉移模塑技術來 包封該晶片而達成，同時伴隨著當模製時之一種插入物用 的導熱的平面式構件22。或者，插入物可使用少量的導熱 黏性材料28而附接在覆晶12的頂部。 該平面式的構件22可從各種厚度jl低成本的板片上衝製 出來。藉由使用適當的插入物厚度，任何厚度的晶片可容 納在單一模中。當與覆晶12組合時，平面式構件22的厚度 應選成可配合.模中之穴的高度’以避免在模子被央持時在 晶片至基板互連線上有過度的負荷。 最好在沒有黏性層的情形下，本發明的覆晶封裝1 〇的散 熱性實質上與覆蓋後的晶片相當，而該覆蓋的晶片是使 用熱油膏。再者，本發明的覆晶封裝10的好處是可避免幫 浦作用（pumping)，而此作用會去除油膏層並增加熱阻抗， 如同覆蓋後之晶片會發生者。很重要的是，本發明的覆晶 封裝10的性能比任何使用溢模（overm〇id)而沒有導熱平面構 件22的封裝要好的多。此外，封裝1〇的彎曲會減少’因為 基板構件16的膨脹與平面式構件22的膨脹之間已取得平 衡，因而在實施於球形格栅（BGA)封裝時可提供高的可靠 度及改善的同平面性。 雖然本發明是以較佳實施例描述，熟習此項技藝之人士 將會了解：各種元件，例如：基板構件16、導熱平面構件 -10- 本紙張尺度i4财_家鮮（CNS ) A4iiyg·丨 21；)Χ297/ϋ V------ --------^ -裝 ------—訂----^--Λ 線 (請先閲讀背面之注意事項再填寫本頁) 43475 9 A7 _B7__ 五、發明説明（8 ) 22、及覆晶12的次序可以改變，然而都不脫離本發明之精 神。此種改變將落在以下所附之申請專利範圍中。本發明 其他的特徵及優點可從讀取說明書及圖式以及所附之申請 專利範圍而得到β -------Λ—裝------訂---；——^‘線 {請先閲讀背面之注意事項再填寫本頁) 經濟部中央橾準局負工消费合作社印製 本紙張尺度適用中國國家標率（CNS ) Α4規格（210Χ297公釐）

Claims (1)

  1. 43475 曰 修正 A8 BS re 經濟部中央標率局貝工消费合作社印装 六、申請專利範圍 " 】*—種覆晶封裝，包括： 一基板構件，具有複數個電路於其内； 一覆晶1安裝在該基板上以便與該基板中所配置之該 等電路中的既定電路導通，該覆晶具有與該基板間隔開 的平面式上表面以及複數個隔開的且圍繞在該平面式表 面既定週圍的邊緣表面，該等邊緣表面實質上與該平面 式表面成垂直關係； 導熱的平面式構件’配置成與該覆晶的平面式上表面 成導熱狀態並具有複數個邊緣表面，此等表面係沿該導 熱的平面式構件之既定週邊延伸；以及 實質上剛硬的介電材料，環繞著該導熱的平面式構件 邊緣表面、該覆晶的邊緣表面、該基板構件的至少—部 分。 2_根據申請專利範圍第1項所述之覆晶封裝，其中該覆晶 在該基板上延伸一段既定距離，而且在與該覆晶組合 後’該導熱平面式構件的厚度被選擇成可提供結構上的 厚度’此厚度係在該基板構件之上延伸一既定距離。 3 ♦根據申請專利範圍第I項所述之覆晶封裝，其中該導熱 的平面構件是以一導熱的黏性材料來接合至一覆晶的上 平面式表面β 4.根據申請專利範圍第1項所述之覆晶封裝，其中該導熱 的平面構件是由銅形成的。 -12- 本紙HL尺度逋用中國國家捸準（CNS ) Α4规格（210X297公釐） >Ν袈-- (請先聞讀背面之注$項再填寫本頁) 訂 Α8 Β8 C8 D8 經濟部中央梂车局員工消费合作社印簟 434759 六、申請專利範圍 5. —種形成一覆晶封裝之方法，包括： 提供一具有複數個電氣接點於其上之基板構件； • ) 提供一覆晶，此晶片具有複數個，電氣接點於其下表 面’一平面式上表面以及複數個在該下表面與上表面之 間延伸的邊緣表面； 連接該覆晶的電氣接點與該基板上的電氣接點； 提供一導熱式平面構件，此構件具有複數個配置在週 邊的邊緣表面； 放置該導熱的平面式構件使之與該覆晶的上表面作熱 傳遞； 放置該導熱的平面式構件、該覆晶、該基板構件於一 模穴中’其中該基板構件的既定部分與該模穴共同作用 以界定實質上封閉的穴； 將可模製的介電材料射入該實質上封閉的穴中； 硬化該可模製的介電材料並藉此形成一實質上剛硬的 介電覆蓋層在該：導熱的平面式構件的邊緣表面，該覆 晶的邊緣表面、該基板構件的既定部分上，而且形成一 實質上包封住的覆晶封裝，此封裝包括：導熱的平面構 件’該覆晶及該基板構件的既定部分；以及 自該封閉的穴中移除該覆晶封裝。 6 .根據申請專利範圍第5項之形成覆晶封裝之方法，其中 該模穴具有既定的高度，而且該導熱的平面式構件之厚 -13 - 本紙張尺度逋用中困Η家#丰（CNS > A4洗格（210X297公釐） {請先閲讀背面之注意事項再填寫本頁)
    434751 as C8 ___ D8 六、申請專利範圍 度被選擇成：在安裝在該覆晶的上平面表面時，該平面 式構件在該基板構件上延伸一既定高度，該既定高度實 質上等於該模穴之高度。 7 .根據中請專利範国第5項之形成覆晶封裝之方法，其中 放置該導熱平面式構件於該覆晶之上表面的步場^包括· 用一導熱的黏性材料將該平面式構件輿該覆晶之 〜上表面 結合。 經濟部中央橾率局員工消f合作社印箪 / K 國 國 t 用 逋 隼 29
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JP3121562B2 (ja) 2001-01-09
US5726079A (en) 1998-03-10
KR980006193A (ko) 1998-03-30
KR100281830B1 (ko) 2001-02-15
US5883430A (en) 1999-03-16
JPH1056103A (ja) 1998-02-24

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