TW430998B - Nonvolatile memory - Google Patents

Nonvolatile memory

Info

Publication number
TW430998B
TW430998B TW088123107A TW88123107A TW430998B TW 430998 B TW430998 B TW 430998B TW 088123107 A TW088123107 A TW 088123107A TW 88123107 A TW88123107 A TW 88123107A TW 430998 B TW430998 B TW 430998B
Authority
TW
Taiwan
Prior art keywords
nonvolatile memory
transistor
source
lateral bipolar
bipolar transistor
Prior art date
Application number
TW088123107A
Other languages
English (en)
Inventor
David K Liu
Ting Wah Wong
Original Assignee
Programmable Silicon Solutions
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Programmable Silicon Solutions filed Critical Programmable Silicon Solutions
Application granted granted Critical
Publication of TW430998B publication Critical patent/TW430998B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW088123107A 1999-03-26 1999-12-28 Nonvolatile memory TW430998B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/277,640 US6159800A (en) 1997-04-11 1999-03-26 Method of forming a memory cell

Publications (1)

Publication Number Publication Date
TW430998B true TW430998B (en) 2001-04-21

Family

ID=23061761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088123107A TW430998B (en) 1999-03-26 1999-12-28 Nonvolatile memory

Country Status (7)

Country Link
US (1) US6159800A (zh)
EP (1) EP1173887A1 (zh)
JP (1) JP2000277636A (zh)
CN (1) CN1216417C (zh)
AU (1) AU3607400A (zh)
TW (1) TW430998B (zh)
WO (1) WO2000059032A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100701716B1 (ko) * 1999-07-29 2007-03-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 비휘발성 반도체 메모리 디바이스
US6628544B2 (en) * 1999-09-30 2003-09-30 Infineon Technologies Ag Flash memory cell and method to achieve multiple bits per cell
JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法
KR100487560B1 (ko) 2003-03-10 2005-05-03 삼성전자주식회사 선택 트랜지스터를 갖는 이이피롬 및 그 제조방법
JP3700708B2 (ja) * 2003-03-26 2005-09-28 ソニー株式会社 半導体装置の製造方法
JP4393106B2 (ja) * 2003-05-14 2010-01-06 シャープ株式会社 表示用駆動装置及び表示装置、並びに携帯電子機器
CN1328794C (zh) * 2003-08-29 2007-07-25 中芯国际集成电路制造(上海)有限公司 一种电可擦除可编程只读存储器的制造方法
US20050274994A1 (en) * 2004-06-14 2005-12-15 Rhodes Howard E High dielectric constant spacer for imagers
CN101459137B (zh) * 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 Dram单元晶体管器件和方法
EP2860767A1 (en) 2013-10-10 2015-04-15 ams AG CMOS compatible ultraviolet sensor device and method of producing a CMOS compatible ultraviolet sensor device
CN108806751B (zh) * 2017-04-26 2021-04-09 中芯国际集成电路制造(上海)有限公司 多次可程式闪存单元阵列及其操作方法、存储器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246677A (ja) * 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US5340760A (en) * 1986-05-26 1994-08-23 Kazuhiro Komori Method of manufacturing EEPROM memory device
JP2509707B2 (ja) * 1989-09-04 1996-06-26 株式会社東芝 半導体装置の製造方法
JP2577093B2 (ja) * 1989-09-14 1997-01-29 三星電子株式会社 マルチゲート型ｍｏｓ トランジスタ構造を具備した半導体素子のセルフアライメントイオン注入方法
JP3109537B2 (ja) * 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
KR0161403B1 (ko) * 1995-03-31 1998-12-01 김광호 반도체 메모리장치 및 그 제조방법
TW368749B (en) * 1995-09-11 1999-09-01 Matsushita Electronics Corp Semiconductor memory device and driving method thereof
US5780893A (en) * 1995-12-28 1998-07-14 Nippon Steel Corporation Non-volatile semiconductor memory device including memory transistor with a composite gate structure
JP3390319B2 (ja) * 1997-02-03 2003-03-24 シャープ株式会社 半導体装置及びその製造方法
US5895241A (en) * 1997-03-28 1999-04-20 Lu; Tao Cheng Method for fabricating a cell structure for mask ROM
US6027974A (en) * 1997-04-11 2000-02-22 Programmable Silicon Solutions Nonvolatile memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection

Also Published As

Publication number Publication date
WO2000059032A1 (en) 2000-10-05
JP2000277636A (ja) 2000-10-06
CN1216417C (zh) 2005-08-24
AU3607400A (en) 2000-10-16
CN1345466A (zh) 2002-04-17
EP1173887A1 (en) 2002-01-23
US6159800A (en) 2000-12-12

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees