DE69610062D1 - Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht - Google Patents
Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen PolysiliziumschichtInfo
- Publication number
- DE69610062D1 DE69610062D1 DE69610062T DE69610062T DE69610062D1 DE 69610062 D1 DE69610062 D1 DE 69610062D1 DE 69610062 T DE69610062 T DE 69610062T DE 69610062 T DE69610062 T DE 69610062T DE 69610062 D1 DE69610062 D1 DE 69610062D1
- Authority
- DE
- Germany
- Prior art keywords
- floating gate
- gate
- cell
- type diffusion
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
- 229920005591 polysilicon Polymers 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/560,249 US5736764A (en) | 1995-11-21 | 1995-11-21 | PMOS flash EEPROM cell with single poly |
US08/577,405 US5841165A (en) | 1995-11-21 | 1995-12-22 | PMOS flash EEPROM cell with single poly |
US08/744,699 US5761121A (en) | 1996-10-31 | 1996-10-31 | PMOS single-poly non-volatile memory structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610062D1 true DE69610062D1 (de) | 2000-10-05 |
DE69610062T2 DE69610062T2 (de) | 2001-05-03 |
Family
ID=27415820
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610062T Expired - Lifetime DE69610062T2 (de) | 1995-11-21 | 1996-11-19 | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht |
DE0776049T Pending DE776049T1 (de) | 1995-11-21 | 1996-11-19 | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE0776049T Pending DE776049T1 (de) | 1995-11-21 | 1996-11-19 | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0776049B1 (de) |
JP (1) | JP2951605B2 (de) |
KR (1) | KR100306670B1 (de) |
AT (1) | ATE196036T1 (de) |
DE (2) | DE69610062T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6965142B2 (en) * | 1995-03-07 | 2005-11-15 | Impinj, Inc. | Floating-gate semiconductor structures |
US5912842A (en) * | 1995-11-14 | 1999-06-15 | Programmable Microelectronics Corp. | Nonvolatile PMOS two transistor memory cell and array |
US6201732B1 (en) | 1997-01-02 | 2001-03-13 | John M. Caywood | Low voltage single CMOS electrically erasable read-only memory |
US5986931A (en) * | 1997-01-02 | 1999-11-16 | Caywood; John M. | Low voltage single CMOS electrically erasable read-only memory |
US6054732A (en) * | 1997-02-11 | 2000-04-25 | Texas Instruments Incorporated | Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size |
US5896315A (en) * | 1997-04-11 | 1999-04-20 | Programmable Silicon Solutions | Nonvolatile memory |
FR2767219B1 (fr) * | 1997-08-08 | 1999-09-17 | Commissariat Energie Atomique | Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi |
US6404006B2 (en) | 1998-12-01 | 2002-06-11 | Vantis Corporation | EEPROM cell with tunneling across entire separated channels |
US6214666B1 (en) | 1998-12-18 | 2001-04-10 | Vantis Corporation | Method of forming a non-volatile memory device |
US6282123B1 (en) | 1998-12-21 | 2001-08-28 | Lattice Semiconductor Corporation | Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell |
US6232631B1 (en) | 1998-12-21 | 2001-05-15 | Vantis Corporation | Floating gate memory cell structure with programming mechanism outside the read path |
US6294810B1 (en) | 1998-12-22 | 2001-09-25 | Vantis Corporation | EEPROM cell with tunneling at separate edge and channel regions |
US6294809B1 (en) | 1998-12-28 | 2001-09-25 | Vantis Corporation | Avalanche programmed floating gate memory cell structure with program element in polysilicon |
US6215700B1 (en) * | 1999-01-07 | 2001-04-10 | Vantis Corporation | PMOS avalanche programmed floating gate memory cell structure |
US5999449A (en) * | 1999-01-27 | 1999-12-07 | Vantis Corporation | Two transistor EEPROM cell using P-well for tunneling across a channel |
US6294811B1 (en) | 1999-02-05 | 2001-09-25 | Vantis Corporation | Two transistor EEPROM cell |
US6326663B1 (en) | 1999-03-26 | 2001-12-04 | Vantis Corporation | Avalanche injection EEPROM memory cell with P-type control gate |
US6172392B1 (en) * | 1999-03-29 | 2001-01-09 | Vantis Corporation | Boron doped silicon capacitor plate |
US6424000B1 (en) | 1999-05-11 | 2002-07-23 | Vantis Corporation | Floating gate memory apparatus and method for selected programming thereof |
EP1091408A1 (de) * | 1999-10-07 | 2001-04-11 | STMicroelectronics S.r.l. | Festwertspeicherzelle mit einer Polysiliziumebene |
EP1096575A1 (de) | 1999-10-07 | 2001-05-02 | STMicroelectronics S.r.l. | Nichtflüchtige Speicherzelle mit einer Polysiliziumsschicht und Verfahren zur Herstellung |
US6222764B1 (en) * | 1999-12-13 | 2001-04-24 | Agere Systems Guardian Corp. | Erasable memory device and an associated method for erasing a memory cell therein |
DE10136582A1 (de) | 2001-07-27 | 2003-02-27 | Micronas Gmbh | Verfahren zur Herstellung eines nichtflüchtigen Halbleiterspeichers sowie nichtflüchtiger Halbleiterspeicher |
US6664909B1 (en) | 2001-08-13 | 2003-12-16 | Impinj, Inc. | Method and apparatus for trimming high-resolution digital-to-analog converter |
CN1669155A (zh) * | 2002-05-09 | 2005-09-14 | 伊皮杰有限公司 | 伪非易失性直接隧穿浮栅器件 |
US7221596B2 (en) | 2002-07-05 | 2007-05-22 | Impinj, Inc. | pFET nonvolatile memory |
US6950342B2 (en) | 2002-07-05 | 2005-09-27 | Impinj, Inc. | Differential floating gate nonvolatile memories |
JP2004200553A (ja) | 2002-12-20 | 2004-07-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US20050145924A1 (en) * | 2004-01-07 | 2005-07-07 | I-Sheng Liu | Source/drain adjust implant |
US7078761B2 (en) * | 2004-03-05 | 2006-07-18 | Chingis Technology Corporation | Nonvolatile memory solution using single-poly pFlash technology |
US7283390B2 (en) | 2004-04-21 | 2007-10-16 | Impinj, Inc. | Hybrid non-volatile memory |
US8111558B2 (en) | 2004-05-05 | 2012-02-07 | Synopsys, Inc. | pFET nonvolatile memory |
JP2005353984A (ja) | 2004-06-14 | 2005-12-22 | Seiko Epson Corp | 不揮発性記憶装置 |
JP2006202834A (ja) * | 2005-01-18 | 2006-08-03 | Seiko Epson Corp | 半導体記憶装置および半導体記憶装置の製造方法 |
US7257033B2 (en) | 2005-03-17 | 2007-08-14 | Impinj, Inc. | Inverter non-volatile memory cell and array system |
US7679957B2 (en) | 2005-03-31 | 2010-03-16 | Virage Logic Corporation | Redundant non-volatile memory cell |
JP2006344735A (ja) * | 2005-06-08 | 2006-12-21 | Seiko Epson Corp | 半導体装置 |
US7348621B2 (en) * | 2006-02-10 | 2008-03-25 | Micrel, Inc. | Non-volatile memory cells |
JP4622902B2 (ja) | 2006-03-17 | 2011-02-02 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
KR100744139B1 (ko) | 2006-06-28 | 2007-08-01 | 삼성전자주식회사 | 단일 게이트 구조를 가지는 eeprom 및 그 동작 방법 |
US8122307B1 (en) | 2006-08-15 | 2012-02-21 | Synopsys, Inc. | One time programmable memory test structures and methods |
US7719896B1 (en) | 2007-04-24 | 2010-05-18 | Virage Logic Corporation | Configurable single bit/dual bits memory |
JP2009239161A (ja) * | 2008-03-28 | 2009-10-15 | Genusion Inc | 不揮発性半導体記憶装置及びその使用方法 |
US7894261B1 (en) | 2008-05-22 | 2011-02-22 | Synopsys, Inc. | PFET nonvolatile memory |
US8355282B2 (en) * | 2010-06-17 | 2013-01-15 | Ememory Technology Inc. | Logic-based multiple time programming memory cell |
US8958245B2 (en) | 2010-06-17 | 2015-02-17 | Ememory Technology Inc. | Logic-based multiple time programming memory cell compatible with generic CMOS processes |
US9042174B2 (en) | 2010-06-17 | 2015-05-26 | Ememory Technology Inc. | Non-volatile memory cell |
JP5238859B2 (ja) * | 2011-07-29 | 2013-07-17 | 株式会社Genusion | 不揮発性半導体記憶装置およびその読み書き制御方法 |
JP2013102119A (ja) * | 2011-11-07 | 2013-05-23 | Ememory Technology Inc | 不揮発性メモリーセル |
JP2013187534A (ja) * | 2012-03-08 | 2013-09-19 | Ememory Technology Inc | 消去可能プログラマブル単一ポリ不揮発性メモリ |
US9236453B2 (en) | 2013-09-27 | 2016-01-12 | Ememory Technology Inc. | Nonvolatile memory structure and fabrication method thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
DE3029539A1 (de) * | 1980-08-04 | 1982-03-11 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle |
JPS63166A (ja) * | 1986-06-19 | 1988-01-05 | Toshiba Corp | 不揮発性半導体記憶装置 |
IT1198109B (it) * | 1986-11-18 | 1988-12-21 | Sgs Microelettronica Spa | Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel |
JP2686450B2 (ja) * | 1988-03-30 | 1997-12-08 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
KR920001402B1 (ko) * | 1988-11-29 | 1992-02-13 | 삼성전자 주식회사 | 불휘발성 반도체 기억소자 |
DE69032937T2 (de) * | 1990-07-24 | 1999-06-17 | St Microelectronics Srl | Verfahren zur Herstellung einer N-Kanal-EPROM-Zelle mit einer einzigen Polysiliziumschicht |
-
1996
- 1996-11-19 DE DE69610062T patent/DE69610062T2/de not_active Expired - Lifetime
- 1996-11-19 DE DE0776049T patent/DE776049T1/de active Pending
- 1996-11-19 EP EP96308360A patent/EP0776049B1/de not_active Expired - Lifetime
- 1996-11-19 AT AT96308360T patent/ATE196036T1/de not_active IP Right Cessation
- 1996-11-21 JP JP8310708A patent/JP2951605B2/ja not_active Expired - Lifetime
- 1996-11-21 KR KR1019960057793A patent/KR100306670B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0776049B1 (de) | 2000-08-30 |
JPH1070203A (ja) | 1998-03-10 |
DE69610062T2 (de) | 2001-05-03 |
EP0776049A1 (de) | 1997-05-28 |
JP2951605B2 (ja) | 1999-09-20 |
DE776049T1 (de) | 1998-03-05 |
ATE196036T1 (de) | 2000-09-15 |
KR970030850A (ko) | 1997-06-26 |
KR100306670B1 (ko) | 2001-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69610062T2 (de) | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht | |
TW363229B (en) | PMOS single-poly non-volatile memory structure | |
TW285777B (en) | PMOS flash EEPROM cell with single poly | |
US5231299A (en) | Structure and fabrication method for EEPROM memory cell with selective channel implants | |
US6486509B1 (en) | Non-volatile memory cell | |
US6084262A (en) | Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current | |
US5212541A (en) | Contactless, 5v, high speed eprom/flash eprom array utilizing cells programmed using source side injection | |
US6160286A (en) | Method for operation of a flash memory using n+/p-well diode | |
EP0778623A3 (de) | Durch heisse Elektroneninjektion programmierbare und durch Tunneleffekt löschbare PMOS-Speicherzelle | |
TW286406B (en) | Non-volatile electrically erasable memory with PMOS transistor NAND gate structure | |
DE69614223D1 (de) | PMOS-Flash-Speicherzelle mit mehrstufiger Schwellspannung | |
US5844271A (en) | Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate | |
US6653682B1 (en) | Non-volatile electrically alterable semiconductor memory device | |
US5467307A (en) | Memory array utilizing low voltage Fowler-Nordheim Flash EEPROM cell | |
US20020110020A1 (en) | Method for improved programming efficiency in flash memory cells | |
US6188113B1 (en) | High voltage transistor with high gated diode breakdown, low body effect and low leakage | |
US6177322B1 (en) | High voltage transistor with high gated diode breakdown voltage | |
US8125020B2 (en) | Non-volatile memory devices with charge storage regions | |
US7969790B2 (en) | Method of erasing an NVM cell that utilizes a gated diode | |
JPS61166078A (ja) | フロ−テイング・ゲ−ト型不揮発性メモリ−素子 | |
EP0326879B1 (de) | Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle | |
JP3422812B2 (ja) | 不揮発性半導体メモリセルの書き換え方式 | |
US8114738B2 (en) | System and method for providing low cost high endurance low voltage electrically erasable programmable read only memory | |
JPH09135008A (ja) | 半導体装置およびその製造方法 | |
KR20010036790A (ko) | 플래쉬 메모리소자 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE JANY & MOMMER PARTNERSCHAFT, 76137 K |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: CHINGIS TECHNOLOGY CORP., SAN JOSE, CALIF., US |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: TER MEER STEINMEISTER & PARTNER GBR PATENTANWAELTE |
|
8364 | No opposition during term of opposition |