TW430699B - Single crystal pulling apparatus - Google Patents

Single crystal pulling apparatus

Info

Publication number
TW430699B
TW430699B TW085113562A TW85113562A TW430699B TW 430699 B TW430699 B TW 430699B TW 085113562 A TW085113562 A TW 085113562A TW 85113562 A TW85113562 A TW 85113562A TW 430699 B TW430699 B TW 430699B
Authority
TW
Taiwan
Prior art keywords
crucible
single crystal
pulling apparatus
crystal pulling
communicating portion
Prior art date
Application number
TW085113562A
Other languages
English (en)
Inventor
Takashi Atami
Hisashi Furuya
Michio Kida
Original Assignee
Mitsubishi Material Silicon Co
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34169995A external-priority patent/JP3428266B2/ja
Priority claimed from JP34170395A external-priority patent/JP3342625B2/ja
Application filed by Mitsubishi Material Silicon Co, Mitsubishi Materials Corp filed Critical Mitsubishi Material Silicon Co
Application granted granted Critical
Publication of TW430699B publication Critical patent/TW430699B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW085113562A 1995-12-27 1996-11-06 Single crystal pulling apparatus TW430699B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34169995A JP3428266B2 (ja) 1995-12-27 1995-12-27 単結晶引上装置
JP34170395A JP3342625B2 (ja) 1995-12-27 1995-12-27 単結晶引上装置

Publications (1)

Publication Number Publication Date
TW430699B true TW430699B (en) 2001-04-21

Family

ID=26577032

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113562A TW430699B (en) 1995-12-27 1996-11-06 Single crystal pulling apparatus

Country Status (5)

Country Link
US (1) US5873938A (zh)
KR (1) KR100462137B1 (zh)
CN (1) CN1083019C (zh)
DE (1) DE19654248B4 (zh)
TW (1) TW430699B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW440613B (en) * 1996-01-11 2001-06-16 Mitsubishi Material Silicon Method for pulling single crystal
JP4252300B2 (ja) * 2002-12-18 2009-04-08 日鉱金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
KR101057100B1 (ko) 2010-10-05 2011-08-17 (주)기술과가치 혼합 효율이 개선된 내부 도가니 및 이를 포함하는 단결정 실리콘 잉곳 제조장치
CN104342750A (zh) * 2013-08-08 2015-02-11 徐州协鑫太阳能材料有限公司 石英坩埚及其制备方法
CN113061980A (zh) * 2021-04-13 2021-07-02 秦皇岛本征晶体科技有限公司 一种生长氟化锂单晶的装置及生长方法
CN113897670A (zh) * 2021-11-12 2022-01-07 中国电子科技集团公司第二十六研究所 一种用于晶体生长的坩埚装置及使用方法
CN115074828A (zh) * 2022-06-30 2022-09-20 徐州鑫晶半导体科技有限公司 坩埚组件、硅晶体制备装置和硅晶体的制备方法
KR20240096253A (ko) 2022-12-19 2024-06-26 한국세라믹기술원 초크랄스키법에서 불순물 제거를 위한 내부도가니 돌출구조

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128999A (ja) * 1985-11-25 1987-06-11 Sumitomo Electric Ind Ltd ２重るつぼを用いた単結晶引上方法及び２重るつぼ
JPS63303894A (ja) * 1987-06-01 1988-12-12 Mitsubishi Metal Corp シリコン単結晶育成方法
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
JPH035393A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造方法
JPH0825832B2 (ja) * 1989-07-06 1996-03-13 東芝セラミックス株式会社 単結晶製造用るつぼ
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH04305091A (ja) * 1991-03-29 1992-10-28 Mitsubishi Materials Corp 単結晶引上方法及びその装置
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置
JPH07165488A (ja) * 1993-12-10 1995-06-27 Fujitsu Ltd 結晶成長装置及び結晶成長方法
US5474022A (en) * 1994-04-21 1995-12-12 Mitsubishi Materials Corporation Double crucible for growing a silicon single crystal

Also Published As

Publication number Publication date
DE19654248A1 (de) 1997-07-03
CN1083019C (zh) 2002-04-17
CN1163950A (zh) 1997-11-05
KR100462137B1 (ko) 2005-04-14
DE19654248B4 (de) 2008-06-19
KR970042342A (ko) 1997-07-24
US5873938A (en) 1999-02-23

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees