CN1163950A - 单晶提拉装置 - Google Patents
单晶提拉装置 Download PDFInfo
- Publication number
- CN1163950A CN1163950A CN96123985A CN96123985A CN1163950A CN 1163950 A CN1163950 A CN 1163950A CN 96123985 A CN96123985 A CN 96123985A CN 96123985 A CN96123985 A CN 96123985A CN 1163950 A CN1163950 A CN 1163950A
- Authority
- CN
- China
- Prior art keywords
- crucible
- opening portion
- single crystal
- pulling apparatus
- crystal pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34169995A JP3428266B2 (ja) | 1995-12-27 | 1995-12-27 | 単結晶引上装置 |
JP341699/95 | 1995-12-27 | ||
JP34170395A JP3342625B2 (ja) | 1995-12-27 | 1995-12-27 | 単結晶引上装置 |
JP341703/95 | 1995-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1163950A true CN1163950A (zh) | 1997-11-05 |
CN1083019C CN1083019C (zh) | 2002-04-17 |
Family
ID=26577032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96123985A Expired - Fee Related CN1083019C (zh) | 1995-12-27 | 1996-12-27 | 单晶提拉装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5873938A (zh) |
KR (1) | KR100462137B1 (zh) |
CN (1) | CN1083019C (zh) |
DE (1) | DE19654248B4 (zh) |
TW (1) | TW430699B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1320173C (zh) * | 2002-12-18 | 2007-06-06 | 日矿金属株式会社 | 化合物半导体单晶的制造方法和晶体生长装置 |
CN104342750A (zh) * | 2013-08-08 | 2015-02-11 | 徐州协鑫太阳能材料有限公司 | 石英坩埚及其制备方法 |
CN115074828A (zh) * | 2022-06-30 | 2022-09-20 | 徐州鑫晶半导体科技有限公司 | 坩埚组件、硅晶体制备装置和硅晶体的制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW440613B (en) * | 1996-01-11 | 2001-06-16 | Mitsubishi Material Silicon | Method for pulling single crystal |
KR101057100B1 (ko) | 2010-10-05 | 2011-08-17 | (주)기술과가치 | 혼합 효율이 개선된 내부 도가니 및 이를 포함하는 단결정 실리콘 잉곳 제조장치 |
KR20240096253A (ko) | 2022-12-19 | 2024-06-26 | 한국세라믹기술원 | 초크랄스키법에서 불순물 제거를 위한 내부도가니 돌출구조 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128999A (ja) * | 1985-11-25 | 1987-06-11 | Sumitomo Electric Ind Ltd | 2重るつぼを用いた単結晶引上方法及び2重るつぼ |
JPS63303894A (ja) * | 1987-06-01 | 1988-12-12 | Mitsubishi Metal Corp | シリコン単結晶育成方法 |
JPH035392A (ja) * | 1989-05-30 | 1991-01-11 | Nkk Corp | シリコン単結晶の製造装置 |
JPH035393A (ja) * | 1989-05-30 | 1991-01-11 | Nkk Corp | シリコン単結晶の製造方法 |
JPH0825832B2 (ja) * | 1989-07-06 | 1996-03-13 | 東芝セラミックス株式会社 | 単結晶製造用るつぼ |
JP2585123B2 (ja) * | 1990-04-13 | 1997-02-26 | 東芝セラミックス株式会社 | シリコン単結晶の製造方法 |
JPH0825836B2 (ja) * | 1990-04-27 | 1996-03-13 | 東芝セラミックス株式会社 | シリコン単結晶の製造装置 |
JPH04305091A (ja) * | 1991-03-29 | 1992-10-28 | Mitsubishi Materials Corp | 単結晶引上方法及びその装置 |
JP3077273B2 (ja) * | 1991-07-30 | 2000-08-14 | 三菱マテリアル株式会社 | 単結晶引上装置 |
JPH07165488A (ja) * | 1993-12-10 | 1995-06-27 | Fujitsu Ltd | 結晶成長装置及び結晶成長方法 |
US5474022A (en) * | 1994-04-21 | 1995-12-12 | Mitsubishi Materials Corporation | Double crucible for growing a silicon single crystal |
-
1996
- 1996-11-06 TW TW085113562A patent/TW430699B/zh not_active IP Right Cessation
- 1996-12-23 DE DE19654248A patent/DE19654248B4/de not_active Expired - Fee Related
- 1996-12-26 US US08/774,183 patent/US5873938A/en not_active Expired - Lifetime
- 1996-12-26 KR KR1019960072082A patent/KR100462137B1/ko not_active IP Right Cessation
- 1996-12-27 CN CN96123985A patent/CN1083019C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1320173C (zh) * | 2002-12-18 | 2007-06-06 | 日矿金属株式会社 | 化合物半导体单晶的制造方法和晶体生长装置 |
CN104342750A (zh) * | 2013-08-08 | 2015-02-11 | 徐州协鑫太阳能材料有限公司 | 石英坩埚及其制备方法 |
CN115074828A (zh) * | 2022-06-30 | 2022-09-20 | 徐州鑫晶半导体科技有限公司 | 坩埚组件、硅晶体制备装置和硅晶体的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1083019C (zh) | 2002-04-17 |
US5873938A (en) | 1999-02-23 |
KR100462137B1 (ko) | 2005-04-14 |
DE19654248A1 (de) | 1997-07-03 |
TW430699B (en) | 2001-04-21 |
KR970042342A (ko) | 1997-07-24 |
DE19654248B4 (de) | 2008-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1904147A (zh) | 高质量硅单晶的生长方法和装置、硅单晶结晶块及硅晶片 | |
US20230340692A1 (en) | Method of Growing Ingot | |
US8524000B2 (en) | Pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt | |
CN1150354C (zh) | 单晶提拉装置 | |
JP5464429B2 (ja) | 四角形の断面を有する単結晶シリコンの育成方法 | |
CN1646736A (zh) | 单晶硅的制造方法及单晶硅以及硅晶片 | |
EP2045372A2 (en) | Method for growing silicon ingot | |
CN1083019C (zh) | 单晶提拉装置 | |
CN1138877C (zh) | 单晶拉制装置 | |
JPH11189488A (ja) | 単結晶引き上げ方法、及び単結晶引き上げ装置 | |
JP5509188B2 (ja) | 単結晶シリコンの製造方法 | |
JP2010030867A (ja) | シリコン単結晶の育成方法 | |
US20090293802A1 (en) | Method of growing silicon single crystals | |
JP2013133244A (ja) | 単結晶シリコンの製造方法 | |
JP2006151745A (ja) | 単結晶の製造方法及びそれらを用いた酸化物単結晶 | |
KR101892107B1 (ko) | 실리콘 단결정 성장 장치 및 이를 이용한 실리콘 단결정 성장 방법 | |
JP2000169285A (ja) | 融液収容ルツボ | |
JP2006290641A (ja) | 化合物単結晶の製造方法 | |
JP3885245B2 (ja) | 単結晶引上方法 | |
US20220389609A1 (en) | Use of quartz plates during growth of single crystal silicon ingots | |
JPH07330482A (ja) | 単結晶成長方法及び単結晶成長装置 | |
CN116516477B (zh) | 单晶炉导流筒及单晶炉 | |
JP2007210865A (ja) | シリコン単結晶引上装置 | |
TW202321529A (zh) | 石英顆粒陣列於單晶矽錠生產過程中之用途 | |
KR20230043918A (ko) | 수평 자기장 초크랄스키에 의해 단결정 잉곳을 생산하는 방법들 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: MITSUBISHI MATERIALS CORP. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: SUMCO CORP. Free format text: FORMER NAME: MITSUBISHI MATERIALS SILICON CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: SUMITOMO MITSUBISHI SILICON Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20111031 Address after: Tokyo, Japan Patentee after: SUMCO Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumco Corp. Effective date of registration: 20111031 Address after: Tokyo, Japan Co-patentee after: Mitsubishi Materials Corp. Patentee after: SUMITOMO MITSUBISHI SILICON Corp. Address before: Tokyo, Japan Co-patentee before: Mitsubishi Materials Corp. Patentee before: Sumitomo Mitsubishi Silicon Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20020417 Termination date: 20151227 |
|
EXPY | Termination of patent right or utility model |