TW428204B - Acceleration and analysis architecture for ion implanter - Google Patents

Acceleration and analysis architecture for ion implanter

Info

Publication number
TW428204B
TW428204B TW088108893A TW88108893A TW428204B TW 428204 B TW428204 B TW 428204B TW 088108893 A TW088108893 A TW 088108893A TW 88108893 A TW88108893 A TW 88108893A TW 428204 B TW428204 B TW 428204B
Authority
TW
Taiwan
Prior art keywords
ion beam
acceleration
ion implanter
source
deceleration column
Prior art date
Application number
TW088108893A
Other languages
English (en)
Chinese (zh)
Inventor
Anthony Renau
Charles Mckenna
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Application granted granted Critical
Publication of TW428204B publication Critical patent/TW428204B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
TW088108893A 1998-06-02 1999-05-29 Acceleration and analysis architecture for ion implanter TW428204B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/089,014 US6130436A (en) 1998-06-02 1998-06-02 Acceleration and analysis architecture for ion implanter

Publications (1)

Publication Number Publication Date
TW428204B true TW428204B (en) 2001-04-01

Family

ID=22214932

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108893A TW428204B (en) 1998-06-02 1999-05-29 Acceleration and analysis architecture for ion implanter

Country Status (7)

Country Link
US (2) US6130436A (enExample)
EP (1) EP1082747B1 (enExample)
JP (1) JP4521850B2 (enExample)
KR (1) KR100590644B1 (enExample)
DE (1) DE69906515T2 (enExample)
TW (1) TW428204B (enExample)
WO (1) WO1999063572A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412620B (zh) * 2004-10-26 2013-10-21 Advanced Tech Materials 清潔半導體製造工具之方法與裝置

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US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
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CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
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US8976634B2 (en) 2013-06-24 2015-03-10 Seagate Technology Llc Devices including at least one intermixing layer
US9058824B2 (en) 2013-06-24 2015-06-16 Seagate Technology Llc Devices including a gas barrier layer
US9245573B2 (en) 2013-06-24 2016-01-26 Seagate Technology Llc Methods of forming materials for at least a portion of a NFT and NFTs formed using the same
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
US10269537B2 (en) 2013-12-16 2019-04-23 Varian Semiconductor Equipment Associates, Inc. Vacuum assembly for an ion implanter system
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US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412620B (zh) * 2004-10-26 2013-10-21 Advanced Tech Materials 清潔半導體製造工具之方法與裝置

Also Published As

Publication number Publication date
DE69906515D1 (de) 2003-05-08
EP1082747B1 (en) 2003-04-02
JP2002517885A (ja) 2002-06-18
US6130436A (en) 2000-10-10
KR20010052514A (ko) 2001-06-25
KR100590644B1 (ko) 2006-06-19
EP1082747A1 (en) 2001-03-14
DE69906515T2 (de) 2003-11-20
JP4521850B2 (ja) 2010-08-11
US6313475B1 (en) 2001-11-06
WO1999063572A1 (en) 1999-12-09

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