DE69906515T2 - Beschleunigungs- und analysevorrichtung für eine ionenimplantationsanlage - Google Patents
Beschleunigungs- und analysevorrichtung für eine ionenimplantationsanlageInfo
- Publication number
- DE69906515T2 DE69906515T2 DE69906515T DE69906515T DE69906515T2 DE 69906515 T2 DE69906515 T2 DE 69906515T2 DE 69906515 T DE69906515 T DE 69906515T DE 69906515 T DE69906515 T DE 69906515T DE 69906515 T2 DE69906515 T2 DE 69906515T2
- Authority
- DE
- Germany
- Prior art keywords
- ion beam
- source
- ion
- ions
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001133 acceleration Effects 0.000 title claims description 35
- 238000005468 ion implantation Methods 0.000 title description 4
- 150000002500 ions Chemical class 0.000 claims description 138
- 238000010884 ion-beam technique Methods 0.000 claims description 120
- 238000000605 extraction Methods 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000004304 visual acuity Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000539 dimer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 150000001793 charged compounds Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Tubes For Measurement (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/089,014 US6130436A (en) | 1998-06-02 | 1998-06-02 | Acceleration and analysis architecture for ion implanter |
| PCT/US1999/011527 WO1999063572A1 (en) | 1998-06-02 | 1999-05-25 | Acceleration and analysis architecture for ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69906515D1 DE69906515D1 (de) | 2003-05-08 |
| DE69906515T2 true DE69906515T2 (de) | 2003-11-20 |
Family
ID=22214932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69906515T Expired - Fee Related DE69906515T2 (de) | 1998-06-02 | 1999-05-25 | Beschleunigungs- und analysevorrichtung für eine ionenimplantationsanlage |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6130436A (enExample) |
| EP (1) | EP1082747B1 (enExample) |
| JP (1) | JP4521850B2 (enExample) |
| KR (1) | KR100590644B1 (enExample) |
| DE (1) | DE69906515T2 (enExample) |
| TW (1) | TW428204B (enExample) |
| WO (1) | WO1999063572A1 (enExample) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130436A (en) * | 1998-06-02 | 2000-10-10 | Varian Semiconductor Equipment Associates, Inc. | Acceleration and analysis architecture for ion implanter |
| KR100289668B1 (ko) * | 1998-07-02 | 2001-05-02 | 윤종용 | 이온주입장치 |
| US6541780B1 (en) * | 1998-07-28 | 2003-04-01 | Varian Semiconductor Equipment Associates, Inc. | Particle beam current monitoring technique |
| US6998625B1 (en) * | 1999-06-23 | 2006-02-14 | Varian Semiconductor Equipment Associates, Inc. | Ion implanter having two-stage deceleration beamline |
| JP3827132B2 (ja) * | 1999-07-30 | 2006-09-27 | 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー | イオン注入装置及びイオン注入方法 |
| JP3727047B2 (ja) * | 1999-07-30 | 2005-12-14 | 住友イートンノバ株式会社 | イオン注入装置 |
| US6731058B1 (en) * | 2000-06-12 | 2004-05-04 | Ushio America, Inc. | Arc path formed in lamp body |
| US6541781B1 (en) * | 2000-07-25 | 2003-04-01 | Axcelis Technologies, Inc. | Waveguide for microwave excitation of plasma in an ion beam guide |
| US6703628B2 (en) | 2000-07-25 | 2004-03-09 | Axceliss Technologies, Inc | Method and system for ion beam containment in an ion beam guide |
| US6608315B1 (en) * | 2000-11-01 | 2003-08-19 | Kourosh Saadatmand | Mechanism for prevention of neutron radiation in ion implanter beamline |
| US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
| KR100701999B1 (ko) * | 2001-05-02 | 2007-03-30 | 삼성전자주식회사 | 이온주입장치의 애널라이저 챔버 |
| US6891173B2 (en) * | 2001-10-26 | 2005-05-10 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation systems and methods utilizing a downstream gas source |
| GB2386247B (en) * | 2002-01-11 | 2005-09-07 | Applied Materials Inc | Ion beam generator |
| US6661017B1 (en) * | 2002-05-29 | 2003-12-09 | Ibis Technology Corporation | Ion implantation system having an energy probe |
| US6758949B2 (en) * | 2002-09-10 | 2004-07-06 | Applied Materials, Inc. | Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities |
| KR101352995B1 (ko) | 2003-02-14 | 2014-01-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 수소-함유 라디칼을 이용한 자연 산화물 세정 |
| US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
| US6891174B2 (en) * | 2003-07-31 | 2005-05-10 | Axcelis Technologies, Inc. | Method and system for ion beam containment using photoelectrons in an ion beam guide |
| KR101160642B1 (ko) | 2003-12-12 | 2012-06-28 | 세미이큅, 인코포레이티드 | 고체로부터 승화된 증기의 유동제어 |
| US6956225B1 (en) * | 2004-04-01 | 2005-10-18 | Axcelis Technologies, Inc. | Method and apparatus for selective pre-dispersion of extracted ion beams in ion implantation systems |
| US6903350B1 (en) * | 2004-06-10 | 2005-06-07 | Axcelis Technologies, Inc. | Ion beam scanning systems and methods for improved ion implantation uniformity |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US7045799B1 (en) * | 2004-11-19 | 2006-05-16 | Varian Semiconductor Equipment Associates, Inc. | Weakening focusing effect of acceleration-deceleration column of ion implanter |
| KR100675891B1 (ko) * | 2005-05-04 | 2007-02-02 | 주식회사 하이닉스반도체 | 불균일 이온주입장치 및 불균일 이온주입방법 |
| US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
| US7402820B2 (en) * | 2005-11-30 | 2008-07-22 | Varian Semiconductor Equipment Associates, Inc. | Ion beam contamination determination |
| US7560939B1 (en) * | 2006-02-17 | 2009-07-14 | Kla-Tencor Technologies Corporation | Electrical defect detection using pre-charge and sense scanning with prescribed delays |
| US7863157B2 (en) | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
| JP2009532918A (ja) | 2006-04-05 | 2009-09-10 | シリコン ジェネシス コーポレーション | レイヤトランスファプロセスを使用する太陽電池の製造方法および構造 |
| WO2007146985A2 (en) * | 2006-06-13 | 2007-12-21 | Semequip, Inc. | Magnetic analyzer apparatus and method for ion implantation |
| US7851773B2 (en) * | 2006-06-13 | 2010-12-14 | Semiquip, Inc. | Ion beam apparatus and method employing magnetic scanning |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US7586110B1 (en) * | 2007-03-30 | 2009-09-08 | Varian Semiconductor Equpment Associates, Inc. | Techniques for detecting ion beam contamination in an ion implantation system and interlocking same |
| US7875125B2 (en) | 2007-09-21 | 2011-01-25 | Semequip, Inc. | Method for extending equipment uptime in ion implantation |
| US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
| US8003498B2 (en) * | 2007-11-13 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Particle beam assisted modification of thin film materials |
| US7999239B2 (en) * | 2007-12-10 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing an electrical stress in an acceleration/deceleraion system |
| US7687786B2 (en) * | 2008-05-16 | 2010-03-30 | Twin Creeks Technologies, Inc. | Ion implanter for noncircular wafers |
| US7888653B2 (en) * | 2009-01-02 | 2011-02-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for independently controlling deflection, deceleration and focus of an ion beam |
| US8227763B2 (en) * | 2009-03-25 | 2012-07-24 | Twin Creeks Technologies, Inc. | Isolation circuit for transmitting AC power to a high-voltage region |
| US20100270262A1 (en) * | 2009-04-22 | 2010-10-28 | Applied Materials, Inc. | Etching low-k dielectric or removing resist with a filtered ionized gas |
| US8427925B2 (en) | 2010-02-23 | 2013-04-23 | Seagate Technology Llc | HAMR NFT materials with improved thermal stability |
| US9251837B2 (en) | 2012-04-25 | 2016-02-02 | Seagate Technology Llc | HAMR NFT materials with improved thermal stability |
| US9224416B2 (en) | 2012-04-24 | 2015-12-29 | Seagate Technology Llc | Near field transducers including nitride materials |
| CN102446691A (zh) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | 一种用于离子注入机的预分析器 |
| US20130114773A1 (en) * | 2011-11-08 | 2013-05-09 | Alexander R. Vaucher | Superconducting neutron source |
| CN104303265B (zh) | 2012-02-03 | 2018-08-14 | 希捷科技有限公司 | 形成层的方法 |
| US8830800B1 (en) | 2013-06-21 | 2014-09-09 | Seagate Technology Llc | Magnetic devices including film structures |
| US9280989B2 (en) | 2013-06-21 | 2016-03-08 | Seagate Technology Llc | Magnetic devices including near field transducer |
| US9058824B2 (en) | 2013-06-24 | 2015-06-16 | Seagate Technology Llc | Devices including a gas barrier layer |
| US9245573B2 (en) | 2013-06-24 | 2016-01-26 | Seagate Technology Llc | Methods of forming materials for at least a portion of a NFT and NFTs formed using the same |
| US9281002B2 (en) | 2013-06-24 | 2016-03-08 | Seagate Technology Llc | Materials for near field transducers and near field transducers containing same |
| JP6038843B2 (ja) | 2013-06-24 | 2016-12-07 | シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ | 少なくとも１つの相互混合層を含む装置 |
| US9570098B2 (en) | 2013-12-06 | 2017-02-14 | Seagate Technology Llc | Methods of forming near field transducers and near field transducers formed thereby |
| US9697856B2 (en) | 2013-12-06 | 2017-07-04 | Seagate Techology LLC | Methods of forming near field transducers and near field transducers formed thereby |
| US10269537B2 (en) * | 2013-12-16 | 2019-04-23 | Varian Semiconductor Equipment Associates, Inc. | Vacuum assembly for an ion implanter system |
| US9305572B2 (en) | 2014-05-01 | 2016-04-05 | Seagate Technology Llc | Methods of forming portions of near field transducers (NFTS) and articles formed thereby |
| US9620150B2 (en) | 2014-11-11 | 2017-04-11 | Seagate Technology Llc | Devices including an amorphous gas barrier layer |
| US9552833B2 (en) | 2014-11-11 | 2017-01-24 | Seagate Technology Llc | Devices including a multilayer gas barrier layer |
| US9822444B2 (en) | 2014-11-11 | 2017-11-21 | Seagate Technology Llc | Near-field transducer having secondary atom higher concentration at bottom of the peg |
| US10510364B2 (en) | 2014-11-12 | 2019-12-17 | Seagate Technology Llc | Devices including a near field transducer (NFT) with nanoparticles |
| US10192573B2 (en) | 2015-03-22 | 2019-01-29 | Seagate Technology Llc | Devices including metal layer |
| US9824709B2 (en) | 2015-05-28 | 2017-11-21 | Seagate Technology Llc | Near field transducers (NFTS) including barrier layer and methods of forming |
| WO2016191707A1 (en) | 2015-05-28 | 2016-12-01 | Seagate Technology Llc | Multipiece near field transducers (nfts) |
| US9852748B1 (en) | 2015-12-08 | 2017-12-26 | Seagate Technology Llc | Devices including a NFT having at least one amorphous alloy layer |
| US20210090845A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Electrostatic filter with shaped electrodes |
| USD956005S1 (en) | 2019-09-19 | 2022-06-28 | Applied Materials, Inc. | Shaped electrode |
| CN115910734A (zh) * | 2022-12-31 | 2023-04-04 | 上海凯世通半导体股份有限公司 | 一种改善高能离子注入机的离子注入均匀性的方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4276477A (en) * | 1979-09-17 | 1981-06-30 | Varian Associates, Inc. | Focusing apparatus for uniform application of charged particle beam |
| US4283631A (en) * | 1980-02-22 | 1981-08-11 | Varian Associates, Inc. | Bean scanning and method of use for ion implantation |
| JPS62295347A (ja) * | 1986-04-09 | 1987-12-22 | イクリプス・イオン・テクノロジ−・インコ−ポレイテツド | イオンビ−ム高速平行走査装置 |
| US4899059A (en) * | 1988-05-18 | 1990-02-06 | Varian Associates, Inc. | Disk scanning apparatus for batch ion implanters |
| JPH03269940A (ja) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | イオン注入装置及びそれを用いた半導体集積回路装置の製造方法 |
| EP0405855A3 (en) * | 1989-06-30 | 1991-10-16 | Hitachi, Ltd. | Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus |
| JPH03159049A (ja) * | 1989-11-17 | 1991-07-09 | Mitsubishi Electric Corp | イオン注入装置 |
| JP2648642B2 (ja) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
| JPH05234560A (ja) * | 1991-02-27 | 1993-09-10 | Sony Corp | イオン注入装置 |
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| JPH07105901A (ja) * | 1993-10-08 | 1995-04-21 | Nissin Electric Co Ltd | イオン注入装置 |
| JPH07211497A (ja) * | 1994-01-21 | 1995-08-11 | Nissin Electric Co Ltd | 減速管 |
| JP3123345B2 (ja) * | 1994-05-31 | 2001-01-09 | 株式会社日立製作所 | イオン打込み装置 |
| JPH0836100A (ja) * | 1994-07-21 | 1996-02-06 | Ulvac Japan Ltd | イオン照射装置 |
| JPH0836988A (ja) * | 1994-07-22 | 1996-02-06 | Nissin Electric Co Ltd | イオン注入装置 |
| JP3358336B2 (ja) * | 1994-10-14 | 2002-12-16 | 日新電機株式会社 | イオン注入装置における注入条件異常検出方法 |
| JPH08212965A (ja) * | 1995-01-31 | 1996-08-20 | Ulvac Japan Ltd | イオン注入装置 |
| US5672882A (en) * | 1995-12-29 | 1997-09-30 | Advanced Micro Devices, Inc. | Ion implantation device with a closed-loop process chamber pressure control system |
| JP3286528B2 (ja) * | 1996-06-14 | 2002-05-27 | 株式会社日立製作所 | イオン注入装置 |
| JP3139378B2 (ja) * | 1996-07-03 | 2001-02-26 | 株式会社日立製作所 | イオン注入装置 |
| KR100234533B1 (ko) * | 1996-10-08 | 1999-12-15 | 윤종용 | 반도체소자 제조용 이온주입 시스템 |
| US6130436A (en) * | 1998-06-02 | 2000-10-10 | Varian Semiconductor Equipment Associates, Inc. | Acceleration and analysis architecture for ion implanter |
-
1998
- 1998-06-02 US US09/089,014 patent/US6130436A/en not_active Expired - Lifetime
-
1999
- 1999-05-25 JP JP2000552703A patent/JP4521850B2/ja not_active Expired - Lifetime
- 1999-05-25 EP EP99924495A patent/EP1082747B1/en not_active Expired - Lifetime
- 1999-05-25 KR KR1020007013653A patent/KR100590644B1/ko not_active Expired - Lifetime
- 1999-05-25 DE DE69906515T patent/DE69906515T2/de not_active Expired - Fee Related
- 1999-05-25 WO PCT/US1999/011527 patent/WO1999063572A1/en not_active Ceased
- 1999-05-29 TW TW088108893A patent/TW428204B/zh not_active IP Right Cessation
-
2000
- 2000-07-26 US US09/625,515 patent/US6313475B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010052514A (ko) | 2001-06-25 |
| EP1082747A1 (en) | 2001-03-14 |
| JP4521850B2 (ja) | 2010-08-11 |
| US6130436A (en) | 2000-10-10 |
| TW428204B (en) | 2001-04-01 |
| EP1082747B1 (en) | 2003-04-02 |
| WO1999063572A1 (en) | 1999-12-09 |
| US6313475B1 (en) | 2001-11-06 |
| JP2002517885A (ja) | 2002-06-18 |
| KR100590644B1 (ko) | 2006-06-19 |
| DE69906515D1 (de) | 2003-05-08 |
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