JP4521850B2 - イオン注入器用の加速および分析アーキテクチャー - Google Patents

イオン注入器用の加速および分析アーキテクチャー Download PDF

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Publication number
JP4521850B2
JP4521850B2 JP2000552703A JP2000552703A JP4521850B2 JP 4521850 B2 JP4521850 B2 JP 4521850B2 JP 2000552703 A JP2000552703 A JP 2000552703A JP 2000552703 A JP2000552703 A JP 2000552703A JP 4521850 B2 JP4521850 B2 JP 4521850B2
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source
ion
ion beam
electrode
ions
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Japanese (ja)
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JP2002517885A5 (enExample
JP2002517885A (ja
Inventor
レナウ，アンソニー
マッケナ，チャールズ
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2000552703A 1998-06-02 1999-05-25 イオン注入器用の加速および分析アーキテクチャー Expired - Lifetime JP4521850B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/089,014 1998-06-02
US09/089,014 US6130436A (en) 1998-06-02 1998-06-02 Acceleration and analysis architecture for ion implanter
PCT/US1999/011527 WO1999063572A1 (en) 1998-06-02 1999-05-25 Acceleration and analysis architecture for ion implanter

Publications (3)

Publication Number Publication Date
JP2002517885A JP2002517885A (ja) 2002-06-18
JP2002517885A5 JP2002517885A5 (enExample) 2009-12-10
JP4521850B2 true JP4521850B2 (ja) 2010-08-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000552703A Expired - Lifetime JP4521850B2 (ja) 1998-06-02 1999-05-25 イオン注入器用の加速および分析アーキテクチャー

Country Status (7)

Country Link
US (2) US6130436A (enExample)
EP (1) EP1082747B1 (enExample)
JP (1) JP4521850B2 (enExample)
KR (1) KR100590644B1 (enExample)
DE (1) DE69906515T2 (enExample)
TW (1) TW428204B (enExample)
WO (1) WO1999063572A1 (enExample)

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US8003498B2 (en) * 2007-11-13 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
US7999239B2 (en) * 2007-12-10 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing an electrical stress in an acceleration/deceleraion system
US7687786B2 (en) * 2008-05-16 2010-03-30 Twin Creeks Technologies, Inc. Ion implanter for noncircular wafers
US7888653B2 (en) * 2009-01-02 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Techniques for independently controlling deflection, deceleration and focus of an ion beam
US8227763B2 (en) * 2009-03-25 2012-07-24 Twin Creeks Technologies, Inc. Isolation circuit for transmitting AC power to a high-voltage region
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
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US9224416B2 (en) 2012-04-24 2015-12-29 Seagate Technology Llc Near field transducers including nitride materials
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CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US8830800B1 (en) 2013-06-21 2014-09-09 Seagate Technology Llc Magnetic devices including film structures
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JP6038843B2 (ja) 2013-06-24 2016-12-07 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ 少なくとも１つの相互混合層を含む装置
US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
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US9822444B2 (en) 2014-11-11 2017-11-21 Seagate Technology Llc Near-field transducer having secondary atom higher concentration at bottom of the peg
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Also Published As

Publication number Publication date
KR20010052514A (ko) 2001-06-25
EP1082747A1 (en) 2001-03-14
US6130436A (en) 2000-10-10
DE69906515T2 (de) 2003-11-20
TW428204B (en) 2001-04-01
EP1082747B1 (en) 2003-04-02
WO1999063572A1 (en) 1999-12-09
US6313475B1 (en) 2001-11-06
JP2002517885A (ja) 2002-06-18
KR100590644B1 (ko) 2006-06-19
DE69906515D1 (de) 2003-05-08

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