KR100590644B1 - 이온 주입기에 대한 가속과 분석 구조 - Google Patents

이온 주입기에 대한 가속과 분석 구조 Download PDF

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Publication number
KR100590644B1
KR100590644B1 KR1020007013653A KR20007013653A KR100590644B1 KR 100590644 B1 KR100590644 B1 KR 100590644B1 KR 1020007013653 A KR1020007013653 A KR 1020007013653A KR 20007013653 A KR20007013653 A KR 20007013653A KR 100590644 B1 KR100590644 B1 KR 100590644B1
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South Korea
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ion beam
source
ion
ions
acceleration
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Expired - Lifetime
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Korean (ko)
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KR20010052514A (ko
Inventor
안토니 레나우
찰리스 맥케나
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
KR1020007013653A 1998-06-02 1999-05-25 이온 주입기에 대한 가속과 분석 구조 Expired - Lifetime KR100590644B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/089,014 US6130436A (en) 1998-06-02 1998-06-02 Acceleration and analysis architecture for ion implanter
US09/089,014 1998-06-02

Publications (2)

Publication Number Publication Date
KR20010052514A KR20010052514A (ko) 2001-06-25
KR100590644B1 true KR100590644B1 (ko) 2006-06-19

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Application Number Title Priority Date Filing Date
KR1020007013653A Expired - Lifetime KR100590644B1 (ko) 1998-06-02 1999-05-25 이온 주입기에 대한 가속과 분석 구조

Country Status (7)

Country Link
US (2) US6130436A (enExample)
EP (1) EP1082747B1 (enExample)
JP (1) JP4521850B2 (enExample)
KR (1) KR100590644B1 (enExample)
DE (1) DE69906515T2 (enExample)
TW (1) TW428204B (enExample)
WO (1) WO1999063572A1 (enExample)

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US6891173B2 (en) * 2001-10-26 2005-05-10 Varian Semiconductor Equipment Associates, Inc. Ion implantation systems and methods utilizing a downstream gas source
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US6956225B1 (en) * 2004-04-01 2005-10-18 Axcelis Technologies, Inc. Method and apparatus for selective pre-dispersion of extracted ion beams in ion implantation systems
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US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US7045799B1 (en) * 2004-11-19 2006-05-16 Varian Semiconductor Equipment Associates, Inc. Weakening focusing effect of acceleration-deceleration column of ion implanter
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WO2007146985A2 (en) * 2006-06-13 2007-12-21 Semequip, Inc. Magnetic analyzer apparatus and method for ion implantation
TWI416572B (zh) * 2006-06-13 2013-11-21 Semequip Inc 多用途離子佈植器束流線組態
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
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US20090124064A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
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US7687786B2 (en) * 2008-05-16 2010-03-30 Twin Creeks Technologies, Inc. Ion implanter for noncircular wafers
US7888653B2 (en) * 2009-01-02 2011-02-15 Varian Semiconductor Equipment Associates, Inc. Techniques for independently controlling deflection, deceleration and focus of an ion beam
US8227763B2 (en) * 2009-03-25 2012-07-24 Twin Creeks Technologies, Inc. Isolation circuit for transmitting AC power to a high-voltage region
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
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US9251837B2 (en) 2012-04-25 2016-02-02 Seagate Technology Llc HAMR NFT materials with improved thermal stability
CN102446691A (zh) * 2010-10-13 2012-05-09 北京中科信电子装备有限公司 一种用于离子注入机的预分析器
US20130114773A1 (en) * 2011-11-08 2013-05-09 Alexander R. Vaucher Superconducting neutron source
CN104303265B (zh) 2012-02-03 2018-08-14 希捷科技有限公司 形成层的方法
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer
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US9570098B2 (en) 2013-12-06 2017-02-14 Seagate Technology Llc Methods of forming near field transducers and near field transducers formed thereby
US9697856B2 (en) 2013-12-06 2017-07-04 Seagate Techology LLC Methods of forming near field transducers and near field transducers formed thereby
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Citations (1)

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
DE69906515D1 (de) 2003-05-08
EP1082747B1 (en) 2003-04-02
JP2002517885A (ja) 2002-06-18
US6130436A (en) 2000-10-10
KR20010052514A (ko) 2001-06-25
EP1082747A1 (en) 2001-03-14
DE69906515T2 (de) 2003-11-20
JP4521850B2 (ja) 2010-08-11
TW428204B (en) 2001-04-01
US6313475B1 (en) 2001-11-06
WO1999063572A1 (en) 1999-12-09

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