TW428120B - Transverse electrical field type active matrix liquid crystal display apparatus and method for producing same - Google Patents

Transverse electrical field type active matrix liquid crystal display apparatus and method for producing same

Info

Publication number
TW428120B
TW428120B TW087118913A TW87118913A TW428120B TW 428120 B TW428120 B TW 428120B TW 087118913 A TW087118913 A TW 087118913A TW 87118913 A TW87118913 A TW 87118913A TW 428120 B TW428120 B TW 428120B
Authority
TW
Taiwan
Prior art keywords
electrodes
bus lines
gate
liquid crystal
crystal display
Prior art date
Application number
TW087118913A
Other languages
English (en)
Inventor
Hiroaki Tanaka
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW428120B publication Critical patent/TW428120B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
TW087118913A 1997-11-18 1998-11-13 Transverse electrical field type active matrix liquid crystal display apparatus and method for producing same TW428120B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31734497A JP3228202B2 (ja) 1997-11-18 1997-11-18 横方向電界方式アクティブマトリクス型液晶表示装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW428120B true TW428120B (en) 2001-04-01

Family

ID=18087183

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087118913A TW428120B (en) 1997-11-18 1998-11-13 Transverse electrical field type active matrix liquid crystal display apparatus and method for producing same

Country Status (6)

Country Link
US (1) US5990987A (zh)
EP (1) EP0922991B1 (zh)
JP (1) JP3228202B2 (zh)
KR (1) KR100316036B1 (zh)
DE (1) DE69833717T2 (zh)
TW (1) TW428120B (zh)

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JP3674953B2 (ja) * 1997-04-11 2005-07-27 株式会社日立製作所 液晶表示装置
JPH1152403A (ja) * 1997-07-31 1999-02-26 Mitsubishi Electric Corp 液晶表示装置
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KR100736114B1 (ko) * 2000-05-23 2007-07-06 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치 및 그 제조방법
KR100620322B1 (ko) 2000-07-10 2006-09-13 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정 표시장치 및 그 제조방법
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KR100386458B1 (ko) 2000-12-20 2003-06-02 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그의 제조 방법
KR20020052562A (ko) * 2000-12-26 2002-07-04 구본준, 론 위라하디락사 횡전계방식 액정표시장치 및 그 제조방법
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KR20020055785A (ko) 2000-12-29 2002-07-10 구본준, 론 위라하디락사 횡전계 방식의 액정표시장치
KR100704510B1 (ko) 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 하부 기판 및 그의 제조방법
KR100748442B1 (ko) * 2001-02-26 2007-08-10 엘지.필립스 엘시디 주식회사 수평전계 구동방식 액정 표시 장치용 어레이 기판 및 그제조 방법
KR100744955B1 (ko) 2001-05-21 2007-08-02 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100802444B1 (ko) 2001-06-29 2008-02-13 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판을 제작하기 위한건식식각장비 내 하부전극 가공방법
KR100833955B1 (ko) * 2001-07-27 2008-05-30 엘지디스플레이 주식회사 횡전계 방식 액정 표시장치용 어레이 기판
KR100820646B1 (ko) * 2001-09-05 2008-04-08 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100829785B1 (ko) * 2001-12-11 2008-05-16 엘지디스플레이 주식회사 횡전계형 액정표시장치
KR100835971B1 (ko) * 2001-12-24 2008-06-09 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100835974B1 (ko) * 2001-12-24 2008-06-09 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
US6839111B2 (en) * 2001-12-28 2005-01-04 Lg.Philips Lcd Co., Ltd. Array substrate for IPS mode liquid crystal display device
KR100829786B1 (ko) * 2001-12-28 2008-05-16 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법
KR100835975B1 (ko) * 2001-12-28 2008-06-09 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR20030057175A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 웨이퍼의 후면 세정장치
US7015999B2 (en) * 2001-12-28 2006-03-21 Lg.Philips Lcd Co., Ltd. Method of fabricating an array substrate for IPS mode liquid crystal display device
KR100801153B1 (ko) * 2001-12-31 2008-02-05 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100819369B1 (ko) * 2001-12-31 2008-04-04 엘지.필립스 엘시디 주식회사 노광용 척
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KR100895016B1 (ko) * 2002-10-04 2009-04-30 엘지디스플레이 주식회사 횡전계방식 액정 표시 소자 및 그 제조방법
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KR100539833B1 (ko) * 2002-10-21 2005-12-28 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR100892087B1 (ko) * 2002-10-28 2009-04-06 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR20040038355A (ko) * 2002-10-31 2004-05-08 엘지.필립스 엘시디 주식회사 개구율이 향상된 횡전계모드 액정표시소자
KR100895017B1 (ko) 2002-12-10 2009-04-30 엘지디스플레이 주식회사 개구율이 향상된 횡전계모드 액정표시소자
KR100928921B1 (ko) * 2002-12-11 2009-11-30 엘지디스플레이 주식회사 횡전계모드 액정표시소자
KR100876405B1 (ko) * 2002-12-23 2008-12-31 엘지디스플레이 주식회사 액정표시소자 제조방법
KR100887668B1 (ko) * 2002-12-30 2009-03-11 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100919199B1 (ko) * 2002-12-31 2009-09-28 엘지디스플레이 주식회사 횡전계방식 액정표시소자
KR100919196B1 (ko) * 2002-12-31 2009-09-28 엘지디스플레이 주식회사 횡전계모드 액정표시소자
KR100936959B1 (ko) * 2002-12-31 2010-01-14 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판
KR100920923B1 (ko) * 2002-12-31 2009-10-12 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
KR100911420B1 (ko) * 2002-12-31 2009-08-11 엘지디스플레이 주식회사 횡전계방식 액정표시장치용 어레이기판
KR100930916B1 (ko) 2003-03-20 2009-12-10 엘지디스플레이 주식회사 횡전계형 액정표시장치 및 그 제조방법
KR100978254B1 (ko) * 2003-06-30 2010-08-26 엘지디스플레이 주식회사 4화소구조 횡전계모드 액정표시소자
KR101001520B1 (ko) * 2003-10-09 2010-12-14 엘지디스플레이 주식회사 횡전계 방식 액정 표시 장치 및 그 제조 방법
KR101019045B1 (ko) * 2003-11-25 2011-03-04 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
KR20050058058A (ko) * 2003-12-11 2005-06-16 엘지.필립스 엘시디 주식회사 박막트랜지스터 어레이 기판 및 그 제조 방법
KR100982122B1 (ko) * 2003-12-30 2010-09-14 엘지디스플레이 주식회사 수평 전계 인가형 박막 트랜지스터 기판의 불량 화소암점화 방법
KR101027943B1 (ko) * 2004-05-18 2011-04-12 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 제조방법
US7453525B2 (en) * 2005-05-24 2008-11-18 Texas Instruments Incorporated Motion detector for a video display system
US7355655B2 (en) * 2005-05-24 2008-04-08 Texas Instruments Incorporated Systems and methods for separating luma and chroma information in a composite video signal
KR20150023160A (ko) 2013-08-23 2015-03-05 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20150027342A (ko) 2013-08-30 2015-03-12 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
CN106847757B (zh) * 2017-03-09 2019-11-01 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置

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Also Published As

Publication number Publication date
KR19990045352A (ko) 1999-06-25
US5990987A (en) 1999-11-23
EP0922991B1 (en) 2006-03-08
DE69833717T2 (de) 2006-11-16
DE69833717D1 (de) 2006-05-04
KR100316036B1 (ko) 2002-09-17
EP0922991A3 (en) 2001-01-10
JPH11149091A (ja) 1999-06-02
EP0922991A2 (en) 1999-06-16
JP3228202B2 (ja) 2001-11-12

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