TW425645B - Wafer scale packaging scheme - Google Patents

Wafer scale packaging scheme Download PDF

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Publication number
TW425645B
TW425645B TW088111047A TW88111047A TW425645B TW 425645 B TW425645 B TW 425645B TW 088111047 A TW088111047 A TW 088111047A TW 88111047 A TW88111047 A TW 88111047A TW 425645 B TW425645 B TW 425645B
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Taiwan
Prior art keywords
wafer
layer
scope
patent application
metal
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Application number
TW088111047A
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English (en)
Inventor
Mou-Shiung Lin
Original Assignee
Lin Mou Shiung
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    • H01L2924/14—Integrated circuits

Description

425645 4 9 I 4 cw f. doc/008 A7 B7 五、發明説明（ί ) 本發明是有關於一種積體電路構裝方法，且特別是有 關於一種可以降低構裝成本之多個單一晶片的構裝方法。 半導體業生產技術的持續硏發，不但在效率上不斷地 改善，同時也因此降低生產成本。尤其是在晶片的製造上， 每一電晶體所需之製造成本已逐年持續降低，此乃不爭之 事實。然而，此種演進創造的利益，卻因爲晶片構裝成本 上，降低步調較爲趨緩的情形而抵銷了部分利益。直至現 今，晶片生產與晶片構裝已被視爲本質上獨立的技術，而 且晶片生產的技術改良，不一定添加價値於晶片構裝" 近來，晶圓等級構裝(wafer scale packaging)已廣爲大 眾所應用。藉此也就意味著整個晶圓在其被切割爲個別晶 片前，即完成構裝。M. Hou近來所發表之”Wafer level packaging for CSP,s,,(in Semiconductor International, July 1998 pp. 305-308)，即是一個很好的例子。晶片等級構裝 (chip scale packages, CSPs)大約在1996年時首先發跡。從 當時開始便有許多改良，例如Hou所揭露的結構就是很好 的例證。在製程方面，她言及個別晶片構裝的組裝製程已 成爲晶圓製造的延伸製程，而非晶片構裝加工的個別步 驟。 簡言之，Hou所述之製程包括封膠灌模於整個晶圓的 表面。然而需要一種特別的灌模壓合方法，以因應各種應 用型態之晶圓，而接合錫凸塊(solder bump)先已形成於整 個晶圓的表面上，錫鉛凸塊能夠穿過封膠而再次暴露於封 裝的表面，而提供製程之可靠度。Hou強調此種方法主要 適用於低密度之構裝。 (請先閎讀背面之注意事項再填寫本頁) -裝. 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中国國家標準（CNS > A4規格（210X297公釐） 425645 49 N twf. doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（π ) 因此本發明的主要目的就是在提供一種構裝及一種半 導體晶片構裝的製程。 本發明的另一目的在於上述製程使得一晶圓上所有晶 片可以同時進行包裝。 本發明的再一目的在於上述製程實施時無逼^ 迫邊或夾具。 本發明還有一目的在於上述製程可以應用於具有高密 度內連線之構裝。 本發明更有一目的在於上述製程與個別晶片構裝的製 程相較，其所形成之構裝在成本上顯著地便宜許多。 爲達成本發明之上述目的’先在晶片上沈積一'聚合材 料層，比如聚亞醯胺（P〇丨yimide)，含矽合成橡膠（silicone elastomer)，或苯基環丁稀（benzocyclobutene)。晶片的護 層(passivating layer)中有多個栓塞（stud)穿透其中，而介層 窗開口（via hole)穿透聚合材料層，與栓塞之表面連接。依 據本發明之一實施例，聚合材料層係覆蓋於一重配置線路 層（redistribution network)上，而重配置線路層則是配置於 晶片先前已平坦化之表面上。個別晶片上，晶片等級 (chip-level)的線路係共同連接至晶圓之切割道(kerf)，因此 可以藉由電鍍的方法將導電柱形成於介層窗開口中。在形 成焊接凸塊後，晶圓即切割成個別的晶片，藉此個別的重 配置線路層則得以分離。在第二實施例中，則未採用重配 置線路層。而導電柱可以藉由無電鍍（electr〇less plating) 的方法形成於介層窗開口中。在第三實施例中，同樣也不 採用重配置線路層，但藉由一接觸層使電鍍得以進行。聚 ___ t 本紙張Λ度適.用中國國家標準（CNS ) a4規格（21〇'犬297公釐） (請先聞讀背面之注項再填寫本頁} -裝· 訂 經濟部智慧財產局員工消費合作社印製 4 G Λ h 侧⑽如靡 A7 B7 五、發明説明（々） 合材料層亦可作爲最終之平坦化層。 圖式之簡單說明： 第la圖爲整個已構裝之積體電路的剖面圖，包括在頂 層的聚合材料.，其係藉由一延伸之介層窗開口與一重配置 層和底部晶片連接。 第lb圖爲整個已構裝之積體電路的剖面圖，包括在頂 層的聚合材料，其係直接藉由一延伸之介層窗開α形成晶 片級之連接。 第2圖繪示積體電路構裝前之構件。 第3圖所繪示爲第2圖之結構增加平坦化層，其中包 括用以容納栓塞之穿孔及一接觸層。 第4圖繪示第3圖之結構續以增加一重配置線路層。 第5圖繪示第4圖之結構續以增加一聚合材料層，且 介層窗開口已形成於其中。 第6圖繪示第5圖之結構中介層窗開口過塡入金屬後 形成一導電栓塞。 第7a圖繪示第6圖之結構續以回蝕刻，並形成錫鉛凸 塊於栓塞突出端，以形成棒棒糖結構。 第7b圖類似第7a圖除了一凸塊底部金屬插入錫鉛凸 塊與聚合材料層之間。 第S圖繪示第2圖之結構續以增加一聚合材料層，而 介層窗開口直接形成於連接墊上方。 第9圖類似第8圖之結構，其中介層窗開口過塡入金 屬後形成一導電栓塞。 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標隼（CNS > A4规格（210X 297公釐） 425645 4914twi'.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（u ) 第l〇a圖繪示第9圖之結構續以形成一錫鉛凸塊於栓 塞之突出端。 第10b圖類似第10a圖除了一凸塊底層金屬插入錫錯 凸塊與聚合材料層之間。 第11a圖及第lib圖繪示依據感光型態之聚合材料之 特性及曝光條件，可以改變形成於其中之介層窗開口的形 狀。 第12圖繪示晶片中個別之重配置線路層可以彼此相連 於切割道，以形成一共同配置線路。 第13圖顯示一獨立之栓塞，甚乎完全覆蓋一聚合 材料層。 實施例 本發明係揭露一種構裝及其製程’用以對整個晶圓包 覆一層聚合材料(polymeric material)，其可以運用多種習 知技術來達成，比如旋塗（sPin coating)、浸泡塗佈 (dipping)、噴塗（spray ing)、或者形成乾膜。本發明亦揭露 諸多低成本建構晶片表面接點與構裝外表面之錫鉛凸塊間 電性連接的方法。以下將敘述本發明之二個實施例。在第 一實施例中，形成構裝中部分元件係採用電鍍的方法，但 熟習該技術者應知無電鍍亦可以取代部分特定製程的電鍍 步驟，如此仍未脫離本發明之精神範圍。 第la圖所繪示爲一實施例之示意圖。圖中繪示一積體 電路之剖面圖，已有多層積層形成於矽基底1上。積層2、 3、4分別表示元件層及二層連線。每一積層均已經過平坦 (請先閲讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準（CNS > A4悦格（210X297公釐） 425645 B7 49 14t\vf.doc/0 0 8 五、發明説明（c) --------f ί裝-- (請先閱讀背面之注^項再填寫本頁) 化。最上層之連線，其包含輸入/輸出墊6、7(1/0 pad)， 而形成於積層4之上表面，並覆以保護層13(通常爲氮化 矽），接著覆以最終平坦化層5(典型爲聚亞醯胺，然非爲 必要）。一般而Η，晶片所黏附之卡或板上，焊點的圖案 並不與栓塞8的圖案重疊。亦可能在構裝之外表面需要多 個球格狀陣列（Ball Grid Array, BGA)的圖案，端看此晶片 黏附於何處而定。爲了解決上述問題，一般係運用一重配 置線路（redistribution network)來解決，而此重配置線路通 常配置於平坦化層5之上表面。部分重配置線路如積層14 所示。本型構裝的的另一特徵在於一接觸層（contacting layer)，位於積層5與10的接面間（未繪示於第la圖，將 示於後續圖示）。 以習知製程技術而標準覆晶（flip chip)之晶片的製 造程序至此步驟即完成。然就此晶片等級構裝方法而言， 製程則續以形成一塑膠層10(聚合材料），以提供晶片對外 部環境及機械上之保護。爲了與積層14形成電性連接， 介層窗開口 11需塡入適當之導電材料，而形成新的錫鉛 凸塊12(solderbump)，黏附於其上端。 桌lb圖所繪不爲第—實施例的示意圖，一種較低成本 經濟部智慧財產局負工消費合作社印製 之構裝。不同於第la圖者爲此實施例中未有重配置線路。 此亦表示接合栓塞之圖案與下一層級構裝之焊點圖案相 同。此項簡化使得最終平坦化層5(繪於第ia圖）可以自結 構中省略。反而，聚合材料層15得以向下延伸至保護層 13 ° 吾人已驗證三種聚合材料適於應用在本發明所揭露之 _ ί 本紙張尺度爾*^^準（CNS > Μ規格（210.χ 297公聲-^ A7 B7 49l4t\vf. doc/008 五、發明説明（d ) 晶片等級構裝型態。這三種聚合材料爲聚亜醯月安 (polyimide)，含砂合成樣膠（silicone elastomer)，及苯基環 丁嫌（benzocyclobutene，BCB)。上述二種材料均可以未固 化型態，利用旋塗方式形成，接著透過其與一硬化劑反應 而硬化（固化），通常還會加熱以加速反應，然並非絕對必 要。此外，聚亞醯胺亦可以乾膜(dry film)的型態取得，其 可以藉由一黏著劑直接貼合於一表面。究竟選擇何種材 料，可依據一些參數做決定。這些參數包括： 熱膨脹係數（Temperature Coefficient 〇f Expansion， TCE)…要較低，以匹配金屬栓塞的熱膨脹係數，減低栓塞 與聚合材料間的局部應力。 楊氏係數 Y(Y〇ung’s modulus, degree of inelasticity)--- 要較低，以降低傳遞至栓塞之應力，以及減低矽與塑膠間 的熱膨脹差異及熱應力。 吸水性…要較低，以確保穩定性(stability)。 水分滲透性…要較低，以保護半導體。 附著性…要較高。 關於電器特性，比如介電常數（dielectric constant)、介 電質損耗（dielectric loss)、電阻率（resistivity)等，此三種 材質都足以符合所需。 顯然地，選擇正確的材質需要根據諸多參數，比如積 層厚度，預定之操作溫度範圍，構裝所暴露的大氣環境， 球格狀陣列密度，晶片大小、輸入/輸出接點數等。此外， 如下所述’使用這些材料的感光型式可以提供諸多好處， 包括便於形成介層窗開口。因此，若這些感光型式的材質 本紙張尺度適用中國國家操準（CNS > A4規格（2丨0X297公* ) (請先閱讀背面之注意事項再填寫本頁) —裝 订 經濟部智慧財產局貝工消费合作社印製 2564 5 49141 vvf.doc/008 A7 B7 五、發明説明（ 『比如聚亞酶胺及一此點在材 ，了列表一爲吾人摘錄這些材料的部分特性。其中 數據 材質特性 聚亞醯胺 ----— 成橡膠 --—----- BCB 固化溫度 350°C _室溫 ------ 250 °Γ 楊氏係數 3.4Gpa ._____获常小 2 Qpa 吸水性 3% _低 0.2% 熱膨脹係數η 40*l〇-6/°C l*l〇-6/ °c ----— 52* l〇'6/ 附著性 中等--好 非常好 ·—— 中等一好 {請先閱讀背面之注項再填寫本頁) 表一 縱使聚合材料層可以吸收設計上既有之應力，而不會 產生如破裂等問題’然而塡入介層窗開口之金屬栓塞亦需 有較佳之彈性性能’使得某些情形下金屬栓塞可以彎曲而 不至於斷裂。舉例來說，一長度爲L之金屬栓塞，一端爲 固定知而另一端爲自由端’假設要自由端產生d的位移， 需要施力F。則施力F的値可由下列等式計算： F=(3Y^l)/L3 , y ^ 其中Y=楊氏係數，1=慣性矩。 經濟部智慧財產局員工消費合作社印製 因此，欲減低產生一既定位移所需之施力（亦即使栓塞 具有彈性），則楊氏係數與慣性矩都需縮小。就楊氏係數 考量，金和錫鉛都是不錯的選擇，而就其他因素考量，銅 是較佳的選擇。然而，慣性矩I是正比於栓塞之質量，也 就是說栓塞之直徑要較小，密度要較低。 接著吾人將揭露本發明之三個實施例。雖然此三個實 本紙張尺度適用中國國家標準（CNS ) A4規格（2!0X297公趁） A7 B7
49 I 4 twf. d Oc/OOS 五、發明説明（1 ) 施例整體製程均不相同，然而其初始之步驟是相同的： 請參照第2圖，所有實施例均始於提供一半導體晶圓， 而晶圓中已形成有多個晶片。每一晶片在晶圓表面上均具 有一圖案，且每一晶片之圖案間均以一區域分隔，即習知 之切割道（kerf)。切割到係用以在後續製程中鋸片得以將 晶圓切割成個別的晶片。如圖所示，積體電路21已形成 於矽基底20上。積層22爲一保護層，相似於第la、lb 圖中的積層13，而連接墊23(相對於第la圖的栓塞7)則 如所示暴露於外界。 笛一實施例 如第3圖’積層30表示如第2圖中連接墊23下方的 所有結構，包括積層22。積層31爲一聚亞醯胺，利用旋 塗方式沈積於積層30的表面，而開口 32係藉由典型之微 影技術形成於其中，包括採用感光型態之聚亞醯胺。積層 31之厚度一般大約介於3至20微米之間。接著，沈積一 鉻銅合金之積層33，藉由濺鍍的方式形成，其厚度大約介 於500至2〇00埃，然此爲一般製程但非絕對必要。 積層33(如第3圖所示)覆蓋整個晶圓表面，接著光阻 層形成並定義，使得欲形成重配置線路區域未覆蓋光阻 外’其餘區域均覆蓋光阻。本發明的重要特徵之一，在於 個別的晶片重配置線路之間係藉由切割道所提供的額外空 間彼此連接’因此形成如第12圖所示之共同配置線路 (common distribution network)。其中個別晶片重配置線路 圖案93-96在切割道區域98間彼此連接，因此形成共同 (請先閱讀背面之注意事項再填寫本頁) 裝_ .?τ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格< 210 X 297公釐） 4 256 4 5 49i4t\vf. doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（〒） 配置線路，其一端如圖中99所標示。 接著利用電鍍的方法增加金屬的厚度，以形成共同配 置線路。金屬層33通電使得金屬可以鍍在未覆蓋光阻層 之所有區域。此層金屬較佳爲銅，然而諸如鋁等金屬亦可 利用無電鍍的方式應用於此處。電鍍步驟完成後可以增加 金屬層厚度約〇·5至5微米，接著則剝除光阻層。如第4 圖中積層41所示即爲重配置線路的一部份，而未覆蓋重 配置線路部分的接觸層33可以選擇性地剝除。 接下來，形成一聚合材料層，如第5圖中積層51所示。 其厚度約介於2〇至25〇微米。然後介層窗開口 52形成於 其中，相當於第la圖中的介層窗開口 11。形成此介層窗 開口的方法可採用幾種不同的子製程： (a) 聚合材料爲感光型態，以BCB及聚亞醯胺爲例， 即有許多商業化的此類合成物可以取得。則介層窗開口 52 利用一適當之光罩進行曝光及顯影即可形成。藉由控制感 光材料的種類及曝光的條件，即可控制介層窗開口的形 狀。舉例來說’若感光材料係生成光罩之反相（negative image) ’則將使得介層窗開口靠近底部的部分較寬，也就 是靠近積層41的部分較寬，如第na圖所示。另一方面， 若感光材料係生成光罩之正相（positive image)，或者曝光 系統之聚焦深度(depth of focus)較低，且影像係聚焦於二 表面之中點，則造成介層窗開口於中間的部位最窄，如第 lib圖所示。—般而言，此種介層窗開口形成之栓塞將比 習知栓塞(單純圓柱形）具有較佳之強度及附著力。 (b) 聚合材料層藉由一光阻罩幕以慣用的方式蝕刻。由 (請先閲讀背面之注意事項再填寫本頁) -裝· 訂 本紙張尺度適用+關家標牟（CNS ) A4聽 ( 21G X 297公釐） 49 14twf.d〇c/008 A7 B7 -----—-------- 5 五、發明説明（（ϋ) 於光阻及聚合材料對於後續步驟之飩刻劑的反應有些相 似，因此通常會使用一硬覃幕層（比如化學氣相沈積之氧 化矽層）。 (C)聚合材料層係藉由雷射鑽孔而蝕刻。對於聚合材料 層厚度超過100微米時，此方法爲較佳之方式。舉例而言， 準分子雷射^^丨I^^laser，波長209nm)或C〇2雷射（波長 10·6微米)均適於應用於本發明，其均可形成直徑約50微 米的孔。 接著，利用第二次電鍍步驟(透過共同配置線路使積層 41通電）’形成另一層金屬鍍於積層41所暴露出之所有表 面（此層金屬較佳是銅，然而其他金屬如金、錫鉛合金， 或鋁亦可以應用於此。換句話說，介層窗開口 52將塡滿 金屬，而在介層窗開口恰好塡滿後緊接著形成栓塞。在過 塡(overfilling)介層窗開口 52後即形成如第6圖所示之外 觀結構，其中栓塞67具有一圓形頂面突出於積層51的表 面。栓塞於聚合材料層表面的突出部分係用來固定(anchor) 錫鉛凸塊，而錫鉛凸塊係於下一步驟中生長形成。藉由將 聚合材料做某一程度的回蝕可加強此固定效能，如第7a 圖所示，而使得栓塞與錫鉛凸塊結合形成棒棒糖（lollipop) 結構。 請參照第7a圖，一錫銘凸塊Ή生長形成於桂塞67突 出之頂部。由於栓塞67依然可以藉由共同配置線路形成 電性導通，因此電鍍是完成此步驟的較佳方法。一般而言， 電鍍提供較佳之控制，尤其是在沈積層的合成層控制上， 比起比如藉由無電鍍達成的方式，具有較佳之控制效果。 f請先閱讀背面之注意事項再填寫本頁) -裝
•1T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 425645 49Utwf.doc/0 0 8 A 7 ---- B7 ---- - ___________—___ 五、發明説明（（I ) 此實施例的〜種變化型態，在栓塞的突出部分形成錫 給凸塊71前’先覆蓋—層凸塊底層金屬72(Under Ball Meul, UBM)，$口第7b圖所示。此層係以一般習用之方法 形成’先沈積於整個表面，再進行微影定義及蝕刻。提供 此額外凸塊底層金屬之優點在於可增加錫鉛凸塊底部的接 觸面積，以強化接合性。當需要較大尺寸之錫鉛凸塊時亦 可運用此結構。上述二結構中，錫鉛凸塊之直徑約介於1〇〇 至300微米’而錫鉛凸塊之間距(pitch)—般約介於2〇〇至 800微米。 當錫凸塊形成後，晶圓即沿切割道切割使其分離成 多個個別晶片。而此步驟中共同配置線路將被破壞，但每 一晶片仍保留其各自之重配置線路。 第二實施例 與第一實施例不同的是，本實施例中未構裝之晶片表 面上沒有重配置線路。因此，製程上由第2圖所示之結構 直接進行聚合材料層80之形成步驟(如第8圖所示）。聚合 材料層之厚度約介於20至250微米。如第一實施例，介 層窗開口 82接著形成於其中，在此還增加一個限制，即 介層窗開口需直接位於連接墊23的上方。這些介層窗開 口相當於第lb圖中的介層窗開口，將容納導電栓塞II。 爲了形成此介層窗開口，可運用下列三種子製程之一： (a)聚合材料爲感光型態，以BC1B及聚亞醯胺爲例， 即有許多商業化的此類合成物可以取得。則介層窗開口 82 利用一適當之光罩進行曝光及顯影即可形成。藉由控制感 __ 以 本紙張尺度適用中國國家標率（CNS ) A4洗格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝_ 訂 經濟部智慧財產局員工消費合作社印製 256 4 5 4 9 1 41 w f, d 〇 c / 0 〇 8 A7 B7 五、發明説明（丨y 光材料的種類及曝光的條件，即可控制介層窗開口的形 狀。舉例來說，若感光材料係生成光罩之反相（negative image) ’則將使得介層窗開口靠近底部的部分較寬，也就 是靠近積層41的部分較寬，如第lla圖所示。另一方面， 若感光材料係生成光罩之正相（positive image)，或者曝光 系統之聚焦深度（depth of focus)較低，且影像係聚焦於二 表面之中點’則造成介層窗開口於中間的部位最窄，如第 lib圖所示。一般而言，此種介層窗開口形成之栓塞將比 習知栓塞(單純圓柱形）具有較佳之強度及附著力。 (b) 聚合材料層藉由一光阻罩幕以慣用的方式蝕刻D由 於光阻及聚合材料對於後續步驟之鈾刻劑的反應有些相 似’因此通常會使用一硬罩幕層（比如化學氣相沈積之氧 化砂層）。 (c) 聚合材料層係藉由雷射鑽孔而蝕刻。對於聚合材料 層厚度超過100微米時，此方法爲較佳之方式。舉例而言， 準分子雷射(eximer laser,波長209nm)或C02雷射(波長 10_6微米)均適於應用於本發明，其均可形成直徑約微 米的孔。 接著’利用無電鍍（因爲此實施例中輸入/輸出墊諸如6 或7無法用以接電），另一層金屬鍍於所有暴露出之連接 墊23表面（此金屬層較佳爲銅，但其他金屬諸如金，接合 金屬或鎳亦可以應用於此）。換句話說，介層窗開口 8〇將 塡滿金屬。 在介層窗開口恰好塡滿後緊接著繼續塡入介層窗開Q 82。在過塡介層窗開口 82後即形成如第9圖所示之外觀 (請先閱讀背面之注^>項再填寫本頁〕 裝 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標率（CNS > A4規格（2丨0X297公嫠） ------1 4 256 4 5 五、發明説明（丨、） 結構，其中栓塞87具有一圓形頂面突出於積層80的表面。 如第一實施例’栓塞於聚合材料層表面的突出部分係用來 固定錫鉛凸塊’而錫鉛凸塊係於下一步驟中生長形成。 請參照第圖’錫鉛凸塊生成於栓塞87之突出 頂部上。由於栓塞87無法接電，因此以無電鍍形成之。 此實施例的一種變化型態，在栓塞的突出部分生成錫 錯凸塊前，先覆蓋一層凸塊底層金屬88(如第10b圖所示）。 此層係以一般習用之方法形成’先沈積於整個表面，再進 行微影定義及蝕刻。提供此額外凸塊底層金屬之優點在於 可增加錫鉛凸塊底部的接觸面積，以強化接合性。當需要 較大尺寸之錫鉛凸塊時亦可運用此結構。上述二結構中， 錫鉛凸塊之直徑約介於1〇〇至3〇〇微米’而錫鉛凸塊之間 距一般約介於200至800微米。 另一種可供選擇，低成本的變化製程’係利用網版刮 塗（screen printing)或模版印刷(stenciling)形成錫銘·凸塊， 以取代無電鍍方式。此種可行的錫鉛凸塊形成方法將使凸 塊直徑增加約100微米，而間距將增加約200微米。 當錫鉛凸塊81形成後，晶圓即沿切割道切割使其分離 成多個個別晶片。 第三實施例 相同於第二實施例，此實施例中未構裝之晶片表面上 無重配置線路。然而，不像第二實施例，此處較佳之金屬 沈積方法爲電鍍。於是，一接觸金屬層沈積於整個保護層 表面。請參照第13圖之積餍45。緊接著，塗佈一層光阻 it 本紙張尺度逋用中國囷家操率（CNS ) A4規格（210X297公簸） (請先閱讀背面之注意事項再填寫本頁) .裝. 訂 經濟部智.¾財產局8工消费合作社印製 > D 〇 4 b > D 〇 4 b A7 B7 49 I 4 twf. doc/008 五、發明説明（ 層，而其中有介層窗開口形成於其中’其形成方式類似於 第一及第二實施例中所提及感光型態之聚合材料層，更包 括其中所提及控制這些介層窗開口形狀的相關技術。接著 利用電鍍的方法，將介層窗開口塡入金屬，並剝除光阻層， 而留下獨立之金屬栓塞於原處，如第13圖中之46所示。 然後，利用-特別的蝕刻步驟，去除接觸金屬層:而 未傷害獨立之金屬栓塞。接下來，一聚合材料用於晶圓以 形成一積層，其厚度略低於獨立金屬栓塞之高度/藉以使 得未被覆蓋之特定部分栓塞突出於聚合材料層$表^。接 著如第二實施例般’利用無電鍍或網版印刷的方法形成錫 給凸塊’以完成本實施例之結構。 ' 雖然本發明已以較佳實施例揭露如上，然任何熟習此 技藝者應知’在不脫離本發明之精神和範 許之更動與潤飾。 = --------{裝------訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局B工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4说格（210乂297公釐）

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  1. 經濟部智慧財產局員工消費合作杜印利衣 4 256 4 b a8 B8 C8 491 4twf.doc/008 j-jg 六、申請專利範圍 1. 一種晶圓等級構裝製程，包括： 提供一半導體晶圓，該半導體晶圓包括複數個晶片圖 案以一切割道區域分隔，並具有一表面之保護層，及複數 個接合墊穿透該保護層； 形成一聚合物主體，其具有複數個金屬栓塞，該些金 屬栓塞與該些連接墊接觸並固定於其上，且自該些連接墊 垂直地穿透該聚合物主體；以及 其中該些金屬栓塞之直徑、高度與材質使得該些金屬 栓塞可以彎曲，以吸收該半導體晶圓與該聚合物主體間的 熱應力。 2. 如申請專利範圍第1項所述之晶圓等級構裝製程， 其中該聚合物主體包括聚亞醯胺、含矽合成橡膠及苯基環 丁烯三者其中之一。 3. 如申請專利範圍第1項所述之晶圓等級構裝製程， 更包括形成複數個介層窗開口於該聚合物主體，並形成該 些金屬栓塞於該些介層窗開口中。 4. 如申請專利範圍第3項所述之晶圓等級構裝製程， 其中該些介層窗開口之形成係藉由化學蝕刻及雷射鑽孔其 中之一。 5. 如申請專利範圍第3項所述之晶圓等級構裝製程， 其中該些金屬栓塞之形成方法包括電鍍及無電鍍其中之 6. 如申請專利範圍第1項所述之晶圓等級構裝製程， 其中施加於長度爲L之一金屬栓塞的彎曲力F，使其造成 d之位移，係根據公式F=(3YId)/L3獲得，其中Y爲楊氏 I? (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 425645 综 C8 4914twf.doc/008 Qg 六、申請專利範圍 係數，i爲慣性矩。 7. 如申請專利範圍第1項所述之晶圓等級構裝製程， 其中該聚合物主體之形成方法包括旋塗法、浸泡塗佈、以 及以一乾膜與一黏著塗層貼合三種方法其中之一= 8. —種晶圓等級構裝製程，包括下列步驟： (a) 提供一半導體晶圓，該半導體晶圓包括複數個晶片 圖案以一切割道區域分隔，並具有一表面之保護層，及複 數個接合墊穿透該保護層； (b) 於該保護層上沈積一平坦化層，其材質爲聚亞醯 胺，並定義及蝕刻該聚亞醯胺層，以形成複數個開口於些 接合墊上； (c) 於該聚亞醯胺層上沈積一凸塊底層金屬，沈積一第 一光阻層於該凸塊底層金屬上，定義該第一光阻層，形成 未覆蓋該第一光阻層之該凸塊底層金屬區域，以定義一共 同配置線路，包括複數個晶片等級重配置線路，並彼此於 該切割道區連接； (d) 利用電鍍的方法，於未覆蓋該第一光阻層之該凸塊 底層金屬區域，沈積一第一金屬層； (e) 去除該第一光阻層，並選擇性地去除該凸塊底層金 屬中未覆蓋該第一金屬層之部分； (f) 形成一聚合材料層，並形成複數個介層窗開口於其 中，並向下延伸至該共同配置線路； (g) 利用電鍍的方法，於未覆蓋該聚合材料層之金屬區 域，沈積一第二金屬層，直到該第二金屬層過塡該些切層 窗開口，藉以形成複數個栓塞，且該些栓塞具有延伸至該 -----------^ 裝--------訂---------旅 {請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4914twf.doc/008 Dg 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 聚合材料層上的突出部分； (h)利用電鍍的方法，形成複數個錫鉛凸塊，以該些栓 塞之突出部分爲中心，並附著其上；以及 ⑴切割該晶圓，藉以切割於切割道區域中之線路，使 得該共同配置線路電性隔離，而形成該些晶片等級重配置 線路。 9. 如申請專利範圍第8項所述之晶圓等級構裝製程， 其中該聚合材料層之材質包括聚亞醯胺、含矽合成橡膠及 苯基環丁烯三者其中之一。 10. 如申請專利範圍第8項所述之晶圓等級構裝製程， 其中該聚合材料層之厚度約介於20至250微米。 11. 如申請專利範圍第8項所述之晶圓等級構裝製程， 其中形成該些介層窗開口於該聚合材料層之步驟更包括採 用一感光型態之聚合材料層，透過一光罩進行曝光，並經 過顯影以形成該些介層窗開口。 12. 如申請專利範圍第8項所述之晶圓等級構裝製程， 其中形成該些介層窗開口於該聚合材料層之步驟更包括利 用一光阻罩幕與一硬罩幕覆蓋於該聚合材料層上，並蝕刻 該聚合材料層。 13. 如申請專利範圍第8項所述之晶圓等級構裝製程， 其中形成該些介層窗開口於該聚合材料層之步驟更包括利 用雷射鑽孔的方法。 14. 如申請專利範圍第8項所述之晶圓等級構裝製程，， 其中該第二金屬層之厚度約介於20至250微米，而其材 質係選自於由銅、金、接合材料及鋁所組成之族群中的一 -----------f l 裝 -------訂 -------- (請先閱讀背面之注意事項再填寫本頁) 本紙張义度適用中國國家標準（CNS)A4規格（210 X 297公釐） A8 B8 C8 OB 425645 4914twf.doc/〇〇8 六、申請專利範圍 種材質。 15. 如申請專利範圍第11項所述之晶圓等級構裝製程， 其中該感光型態之聚合材料層提供該光罩之反相，使得該 些介層窗開口靠近該第一金屬層部分的口徑較寬。 16. 如申請專利範圍第11項所述之晶圓等級構裝製程， 更包括： 採用一感光型態之聚合材料層，其提供該光罩之正相， 並具有一上表面及一下表面； 利用一曝光系統，其具有一低聚焦深度； 進行該聚合材料層之曝光，聚焦於該上、下表面中間 之平面，藉以使得該些介層窗開口於其中間位置之口徑最 窄。 17. 如申請專利範圍第8項所述之晶圓等級構裝製程， 更包括回蝕刻該聚合材料層該些栓塞與該些錫鉛凸塊共同 形成一棒棒糖結構。 18. 如申請專利範圍第8項所述之晶圓等級構裝製程， 更包括在形成該些錫鉛凸塊前，在該些栓塞未被覆蓋的部 分覆蓋一凸塊底層金屬。 19. 一種晶圓等級構裝製程，包括下列步驟： (a) 提供一半導體晶圓，該半導體晶圓具有複數個積體 電路，並具有一表面之保護層，及複數個接合墊連接該些 積體電路之接點； (b) 形成一聚合材料層，並形成複數個介層窗開口於其 中，而該些介層窗開口位於該些接合墊上，並向下延伸至 該些接合電； 本紙張尺度適用中國國家標準（CNS)Al規格（210 X 297公釐） -----------^ 裝--------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 425645 49l4t\vf.d〇c/〇〇S AS H8 C8 08 :、申請專利範圍 ⑷藉由無電鑛的方法，在未覆蓋該聚合 金屬區域沈積一金屬層，直到該金屬層過塡等此八有 □ ’藉以形成複數個栓塞，其具有突出部分 材料層上，並突出一特定厚度： 主tu聚tj ⑷藉由無電鍍的方法，形成複數個錫錯 栓塞之突出部分爲中心，並附著其上；以及 β二 (e)切割該晶圓以形成複數個獨立的晶片。 二:範圍第19項所述之晶圓等級構裝製程， 苯基環丁烯三者其中之一。 3矽口成橡膠及 21. 如申請專利範圍第19項所述之 其中該聚合材料層之厚度約介於2〇至25〇 '，構裝製程， 22. 如申請專利範圍第19項所述 其中形成該些介層窗開口於該聚合材料構裝製程， 用-感光型態之聚合材料層，透過 2驟更包括採 過顯影以形成該些介層窗開口。 L行曝光，並經 23‘如申請專利範圍第19項所述 其中形成該些介層窗開口於該聚合 ^ 級構裝製程， 用—光阻罩幕與—硬罩幕覆蓋於該步驟更包括利 該聚合材料層。 ㈡材枓餍上’並蝕刻 24_如申請專利範圍第d項所述 其中形成該些介層窗開口於該聚合級構裝製程， 用雷射鑽孔的方法。 科層之步驟更包括利 25·如鴨糊範醜a項職 其中該感光型態之聚合材料層提供’圖等級構裝製程， ’光簞之反相，使得該 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 2 5 6 4 5 B8 Γ'ϋ 49I4twf.doc/〇〇S 六、申請專利範圍 些介層窗開口靠近該第一金屬層部分的口徑較寬。 26·如申請專利範圍第22項所述之晶圓等級構裝製程， 更包括： 採用一感光型態之聚合材料層’其提供該光罩之正相， 並具有一上表面及一下表面； 利用一曝光系統，其具有一低聚焦深度； 進行該聚合材料層之曝光，聚焦於該上、下表面中間 之平面，藉以使得該些介層窗開口於其中間位置之口徑最 窄。 27. 如申請專利範圍第19項所述之晶圓等級構裝製程， 其中該些栓塞之突出部分突出於該聚合材料層之該特定厚 度約介於1〇至75微米。 28. 如申請專利範圍第19項所述之晶圓等級構裝製程， 更包括在形成該些錫鉛凸塊前，在該些栓塞未被覆蓋的部 分覆蓋一凸塊底層金屬。 29. 如申請專利範圍第19項所述之晶圓等級構裝製程， 其中步驟（d)形成該些检塞之方法，包括利用網版刮塗及模 版印刷其中之一，取代無電鍍方式。 30. —種晶圓等級構裝製程，包括下列步驟： (a) 提供一半導體晶圓，該半導體晶圓具有複數個積體 電路，並具有一表面之保護層，及複數個接合墊連接該些 積體電路之接點； (b) 於該保護層上，沈積一接觸金屬層； (c) 形成一光阻層，並形成複數個介層窗開口於其中’ 且該些介層窗開口向下延伸至該接觸金屬層； ------------,'.裝----I---訂-------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS>A4規格（210 x 297公釐） 經濟部智慧財產局員工消費合作社印制^ ^ a ·· ' A8 id， R8 49 14twf_doc/0 0 8 六、申請專利範圍 (d) 藉由電鍍的方法，沈積一金屬層於該接觸金屬層未 被該光阻層覆蓋之區域，直至該些介層窗開口爲該金屬層 所塡滿； (e) 去除該光阻層，藉以形成複數個獨立之金屬栓塞； ⑴在未傷害該些金屬栓塞的情形下，去除該接觸金屬 層； (g) 塗佈一聚合材料層於整個該晶圓，藉以使得該些金 屬栓塞之部分未被覆蓋該聚合材料層； (h) 形成複數個錫鉛凸塊，以該些金屬栓塞之突出部分 爲中心，並附著其上；以及 ⑴切割該晶圓以形成複數個獨立的晶片。 31. —種晶圓等級構裝，包括： 一半導體晶圓，該半導體晶圓包括複數個晶片圖案以 一切割道區域分隔，並具有一表面之保護層.，及複數個接 合墊穿透該保護層； 一聚合材料主體，具有複數個金屬栓塞，該些金屬栓 塞與該些連接墊接觸並固定於其上，且自該些連接墊垂直 地穿透該聚合物主體；以及 其中該些金屬栓塞之直徑、高度與材質使得該些金屬 栓塞可以彎曲，以吸收該半導體晶圓與該聚合物主體間的 熱應力。 32. 如申請專利範圍第31項所述之晶圓等級構裝，其 中該聚合材料主體之材質包括聚亞醯胺、含矽合成橡膠及 苯基環丁烯三者其中之一。 33. 如申請專利範圍第31項所述之晶圓等級構裝，其 (請先閱讀背面之注意事項再填寫本貝) 人^--------訂---------線f 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） 4. 4. A8 B8 CS ns 4 9 1 41 t', d 〇 c / 0 0 8 六、申請專利範圍 中該聚合材料主體之厚度約介於20至250微米。 34·如申請專利範圍第31項所述之晶圓等級構裝，其 中該些金屬栓塞之寬度約介於10至200微米。 35. 如申請專利範圍第31項所述之晶圓等級構裝，其 中該些金屬栓塞包括電鍍銅。 36. 如申請專利範圍第31項所述之晶圓等級構裝，施 加於長度爲L之一金屬栓塞的彎曲力F，使其造成d之位 移，係根據公式F=(3YId)/L3獲得，其中Y爲楊氏係數，I 爲慣性矩。 -----------^ 裝-------訂---------線~ I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局負工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公^ )
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