TW383477B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW383477B
TW383477B TW087107703A TW87107703A TW383477B TW 383477 B TW383477 B TW 383477B TW 087107703 A TW087107703 A TW 087107703A TW 87107703 A TW87107703 A TW 87107703A TW 383477 B TW383477 B TW 383477B
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TW
Taiwan
Prior art keywords
power supply
aforementioned
semiconductor wafer
power
semiconductor device
Prior art date
Application number
TW087107703A
Other languages
English (en)
Inventor
Takashi Nakamura
Original Assignee
Mitsubishi Electric Corp
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Publication date
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Application granted granted Critical
Publication of TW383477B publication Critical patent/TW383477B/zh

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

經濟部中央標準局員工消費合作社印聚 A7 B7 五、發明説明（1') [發明背景] 本發明係關於一種半導體裝置，尤其是關於一種在工作 時所產生之熱得Μ迅速發散掉之半導體裝置。 [先前技術] 近年來由於有待處理之大量資訊日益增加，對於積體電 路[1C]之高速工作能力之要求亦與日益增，為達成此一高 速動作之要求起見，同時又為了要能輸入及輸出所要之訊 號起見，設於1C上之訊號插腳之數量亦隨之增加，再者， 由於IC所消耗之電力亦將增加，電源供給所需之電源插腳 之數量，也必須增加。 另一方面，就其内封人有半導體晶片之封裝體而言，為 達成高密度之裝填，必須力求其大小尺寸之儘量接近半導 體晶片之大小尺寸。 首先，針對第一種之習知技術，將其中封有半導體晶片 之封裝體包括在內之半導體裝置，參照附圖作一說明，圖 1所示者乃一採Bine-pitch ball grid Array (微間距球開 陣列構造）（Μ後一律寫作為微間距BG A]之結構），參照圔7 ，在浸含有環氧樹脂之玻璃薄片（以下稱為「料帶」）106 之某一個面上，搭接固定有一其中介存有一粘著層105之 半導體晶片102，在料帶106之毗接周圍形成有數個墊形電 極107，各墊形電極107利用金線104與半導體晶片102所定 之區域形成電氣連接狀態。 另一方面，在料帶106之另一面上形成有複數個錫鉛球 1 0 8，各該钱08可依在料帶106所形成之，所規定之之 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） -A - (#先閲讀背面之注意事項再填寫本頁) 衮- 訂 ,c. 經濟部中央標準局員工消費合作社印製 A7 _B7 五、發明説明（2 ) 配線而與终端電極107形成電氣連接狀態，半導體晶片102 利用成模樹脂110封固於料帶106上。 微間距BG A由於其上之作·為電極插腳之娛妫球可呈陣列狀 配置，再由於採小封裝體處理，故可形成較多之插腳，這 一點相當有利。 其次，再針對可視之為第2種習知技術之另一半導體裝 置糾|照附圖，作一說明，圔8所示者，係一晶片型標定封 裝體（CSP)之结構圖，自圖8可看出，半導體晶片102之表 面上沒有複數個外部電極1 0 外部電極1 0 9可介經金屬配 線111及终端電極107，而與半導體晶Η 102之所規定之領 域形成電氣連接狀態，半導體晶片102利用成模樹脂110封 固。 CSP之大小與半導體晶片102：大致相同，但可形成更多之 插腳2，在基板上裝配所需之面積較小，故可進行高密度 之裝置。 但，不論是上述之微間距B G Α或C S Ρ，由於消耗電力較大 ，所Μ半導體晶片所產生之熱，就成了一棘手問題，為進 行散熱處理，必須採取種種對策。 其次，茲就可視之為三類習知技術之，可將該一性質 之熱作有效之散熱處理之半導體裝置，根據日本專利特開 平7-50368號公報上所開示之半導體裝置為一示例加K說 明，圖9為該公報上所開示之半導體裝置之一斷面層，圖 10為帽蓋部份去除後之半導體裝置之一平面圖，首先，參 照圖<?，半導體120之背面固定於封裝體125上，且固封於 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公i ) (請先閱讀背面之注意事項再填寫本頁) -'5 A7 B7 五、發明説明（3 ) 由帽蓋部123及封裝體125所形成之空間內，是Μ，在半導 體晶片120之上側與帽蓋部123之內側之間，乃形成有一空 隙。 半導體晶片1 2 0上之電源，經由插腳1 2 9 *配線1 2 7，電 源用電極124，焊錫132，及電源用終端122，由外部電路 供應*又，外部電路與半導體晶片1 2 0間之訊號，經由插 腳130，配線128，導線126，結合電線131，结合終端121 交流之，特別值得一提的是，在半導體晶片120之表面上 所形成之電源用終端122，如圖10所示，其面積可増大。 本半導體裝置在工作時，在半導體晶片120上所產生之 熱，除可自半導體晶片120之內側朝封裝體125傳散外，亦 可經由電源用終端122，煬錫132及電源用電極124而傳導 至帽蓋部123，如此*可雙管齊下自封裝體125及帽蓋部 123同時進行散熱，故可將半導體晶片120上所產生之熱丸 份向外部釋散。 又，在設置電源用電極12 4及電源用终端122之後，可減 少經由结合终端121對半導體晶片120之電源供給，其減量 經濟部中央標準局員工消費合作社印製 (讀先閣讀背面之注意事磺再填寫本頁) 部份可轉供結合終端121在半導體晶片120與外部電路之間 之訊號通訊用，其结果，結合终端1 2 1作為訊號通訊用之 數量與往昔相較之下*自然增加不少。 但上述之第三示例之習知技術半導體裝置，有如下之困 擾存在，首先，半導體晶片1 0 2之電源供給是介經電源用 電極1 2而提供者，因此，在半導體晶片1 0 2上沒有必要設 置電源用結合終端，所Κ可加設供電源Κ外之訊號用结合 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐) ~" A7 B7 五、發明説明（4 ) 終端，但，電源則是自在封裝體1 2 5上所設之插腳1 2 9供應 至半導體晶片102上，所Μ，在封裝體125之所規定之區域 上所設之插腳129總數並無變化，在此區域上若欲加設新 的訊號甩插腳自然有了困難。 又*傳散至帽蓋部123之熱，若帽蓋部123及封装體125 之表面積越大，則向外界散熱之效果越佳，所Κ，就比較 小之帽蓋部123及封裝體125而言，就比較無法達到充份散 熱之效果。 發明之概述 本發明之目的乃在，為了能夠解決上述之困擾問題，而 提供一能將在工作時所產生之熱充份釋散，並謀增設訊號 用插腳之半導體裝置。 本發明半導體装置，就其之一觀點而言，其上乃配置有 半導體晶片，封裝用構件，電源端子部，Μ及複數個訊號 端子，及電源配線部是也，封裝用構件上可收納半導體晶 片，電源端子部與複數之訊號端子部配置於封裝用構件上 ，並分別與半導體晶片形成電氣連接狀態。 經濟部中央標隼局貝工消費合作社印製 (讀先間讀背面之注意事項再填寫本頁) 電源配線部與電源端子部形成電氣連接狀態，並配置於 封裝用構件之外部，電源端子部與電源配線部所配置之表 面有別於訊號端子部所配屬之封裝用構件之表面。 在採此结構之後，電源端子部即可配置於一有別於其配 置有訊號端子部之封裝用構件之表面之一表面上，如此， 則在與兩者均同時配置於封裝用構件之同一表面之情況相 較之大，在配有訊號端子部之表面上，除了配置了電源端 本紙張尺度適用中國國家標準（CNS ) Α4規格（21〇Χ2<Π公釐） —7 一 A7 B7 五、發明説明（5 ) 子部之外，可同時再增設訊號端子部，又，由於其上配置 有電源端子部之表面未配置訊號端子部，所Μ接至電源端 子部之電源配線部之配線S幅可以毅兔彳|更為寬鬆，如此， 即可增大電源配線部之表面積，其结果，自半導體晶片介經 電源端子部而傳導至電源配線部之熱即可迅速有效地排散 至外界。 最好，電源端子部及電源配線部所配置之表面能面對其 上配置有訊號端子部之封裝用構件之表面，形成對峙。 在此情況下，電源配線部之配線寬幅之設定可進一步放 寬，其结果，半導體裝置之散熱可更有效率的進行。 最好，半導體裝置上納入一其上載置有封裝用構件體Μ 及形成有所規定之配線之基板，且電源配線部上涵蓋了封 裝用構件，並能與所規定之配線形成電氣連接狀態者。 在此情況下，所產生之熱可經由電源配線部傳導至印刷 電路基板上，如此，即可收進一步迅速有效地釋散熱之功 。又，在採可將封裝用構件加Μ涵蓋之電源配線部設計之 後，可收抑制電磁干涉半導體晶片之功。 經濟部中央標準局員工消費合作社印製 又，最好 > 本發明半導體裝置能納置一與各訊號端子部 分別形成電氣連接狀態，且其上形成有所規定之配線之第 一 έΓΘΙ路基板與，其上形成有電源配線部之第二印刷電路基 板，且在該第一印刷電路基板與第二印刷電路基板之間， 配置有用Μ收納半導體晶片之封裝用構件。 在採如上所敘述之結構之後，即可在有限之空間内，達 成Κ最大組装密度而行半導體裝置之裝配之目的。 一 8 (讀先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國_國家標準（CNS ) Α4規搞（210X 297公釐） Α7 Β7 五、發明説明（6 體 導 半 之 態 形 施 實 第 之 明 發 -本 採 該 出 ] 示 明顯 說M 單用 簡為 之 係 式B1 圖 圖 之 内 體 裝 封 之 置圖 裝 之 面 斷 之 取 所 較 線 A I A 之 ο 示 式所 ，圖 中 Ί 1 δ 圖 平出 示 顯Μ 用 為 係 導 半 下 態 形 施 實 第 之一 同 相 在 該 出 示 顯M 用 為 係 ο 3 式圖 圖 之 置 4 裝 圖 ΜαΜΛ 式 圖 之 面 平一 某 面 斷 之 取 所 段 線 B I B 之 示 所 3 圔 在 該 出 示 顯Μ 用 為 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 之圖式。 圖5係為用K顯示出本發明之第2實施形態之半導體裝置 中之某一側視之圔式。 圖6係為用Μ顯示出該在相同之第2實施形態下，本發明 半導體裝置之變化例之其一側面之圖式。 圖7係為用Μ顯示出採第一種先前技術之半導體裝置中 之局部斷面之立體圖。 圖8係為用Μ顯示出採第二種先前技術之半導體裝置中 之局部斷面之立體圖。 圖9係為用Μ顯示第3種先前習知技術之半導體裝置中之 某一斷面之圖式。 圖10係為用Μ顯示出圖9所示之半導體装置之某一平面 之圖式。 [較佳具體例之詳细說明] 第1實施形態： 茲參照圖1〜圖4就採本發明第一實施形態之半導體裝置 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X2Q7公筇) ^ ~ A 7 B7 五、發明説明（7 ) ，加K說明。並且，圖2為沿圖1之A-A線較所取之斷面圖 ，圖4則為沿圖3之B - B線段所取之斷面圖，首先，參照圖1 及圖2，在料帶8上衝壓聯结成形有一半導體晶片2，在半 導體晶片2之外週近接表面上成形有複數個结合终端6，又 ，料帶8之外週表面上設有複數個墊狀電極7*各结合終端 6與墊狀電極7可藉结合電籙4肜成電氣連接狀態，在半導 體晶片2之表面上形成有複數個電源用電極10，是為向半 導體晶片已供應電源之電源端子部，又，在料帶8之下方 ，形成有複數個訊號用電極12，是為供半導體晶片X與訊 號交流之訊號端子部，半導體晶片2及料帶8等，Μ成模樹 脂等封固於封装體9內。 , 再參照圖3，圖4，可知電源用電極12上接有電源配線部 之電源配線16，該電源配線16包括電源（Vcc)配線16a及 GND配線16b在内，各訊號用電極12與在印刷電路基板 (DCB)l 4a之表面上所形成之所規定之配線（圖未示）形成電 氣連接狀態，電源配線16a及GND配線16b分別與在印刷電 路基板14a之表面上所形成之印刷電路基板上Vcc配線15a 經濟部中央標隼局貝工消費合作社印製 (讀先閱讀背面之注意事項再填寫本頁) 及印刷電路基板上GND配線15b形成電氣連接狀態。 在採用如上所述之半導體裝置之後，其上配置有訊號用 電極12之封裝體9之下方就可不必再配置電源用電極10， 如此，則在封裝體9之下方所限定之區域内，除可配置電 源用電極外，尚可增設訊號用電極。 再就接至電源用電極10之電源配線16而言，由於係配置 於封裝體9之外側，故可使用較寬之配線，半導體晶片2所 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公# ) 10 - A7 B7 五、發明説明（s) 產生之熱，不但可經由結合電線4傳導至墊狀電極7，亦同 時可自電源用電極10傳導至電源配線16，此時，電源用配 線16a具有散熱片之功能，’可迅速有效地進行散熱，又， 由於熱亦可自電源配線1 6傳導至印刷電路基板1 4 a上，故 散熱敦率乃可進一步之提升。 再者，為使·能對半導體装置進行高密度之組装作業起見 ，封裝體之尺寸應力求與半導體晶片之尺寸接近，一致， 但，若將封装體之原有尺寸改小時，阻礙封装體內熱之流 動所需之力，亦即熱胆抗，將增加，尤其是對於其上承載 有超高速半導體晶Η之半導體装置而言，由於散熱量較大 ，故往往羌靠封裝體無法進行充份之散熱，即使在承載此 等超高速之半導體晶片之情況下，亦可經由上述之電源配 線等，而將在半導體晶片2所產生之熱有效地予Μ釋散掉。 又，在可以將封裝體9覆罩之情況下設置電源配線16之 後，電源配線1 6即可發揮有如一盾障之功能，而抑制對半 導體晶片2之電磁干擾。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 又，與结合電線栢較之下，是利用口徑較大之電源用電 極1 0將電源供給至半導體晶片2的*故不但可抑制電氣阻 抗，亦可抑制電導，而可收將穩定之電壓輸至半導體晶片 2之功。 此外，由於封装體可採用成模樹脂材料，電源用電極及 訊號電極2能作焊接處理，故可舒緩因熱之釋出而造成之 應力方面之問題。 第2實施型態 本紙張尺度適用中國國家標隼（CNS ) Μ規格（210Χ 297公嫠） .., A7 B7 五、發明説明（9 ) 茲藉圖5，就採本發明之第2實施型態之半導體装置作一 說明，參照圖5，其上載置有半導體晶片之封装體9，其本 身乃載置於印刷電路基板I4b之上者也，各訊號用電極1 2 ，分別與在印刷電路基板14b之表面上所形成之所規定之 配線（圖未示）形成電氣連接狀態，至於印刷電路基板14c 之表面上則形成有印刷電路基板上電源配線1 5，該等印刷 電路基板上之電源配線15與設於封裝體9上之電源用電極 10形成電氣連接狀態。 由於在此情況下，印刷電路基板14c之表面上可對電源 配線15之配線區域提供更寬廣之保護，所以自電源用電極 10傳導至電源用配線15上之熱可更有效地釋散，又，半導 體晶片2亦可取得更穩定之電源供給。 再者，印刷電路基板14e之其他表面，可因形成有所規 定之之印刷配線，故可在印刷電路基板14c上載置「其上 載置有半導體晶片之」封裝體9。 經濟部中央標準局員工消費合作社印製 (讀先閱讀背面之注意事項再填寫本頁) 在此情況下，可藉堆集複數個印刷電路基板1 4b , 1 4c , 1 4d ，而在有限之空間内，對半導體裝置進行高密度之組裝作 業。 Μ上乃是電源用電極10在與「其上形成有訊號用電極12 之封装體9之」下側面形成對峙之上側面成型之情況下所 作之說明，但亦可配合半導體裝置之個別組裝需求，而將 電源用電極佈速，成形於封裝體之側面等，亦無不可*在 此情況下亦可取得與上述者相同之效果。 Μ上所敘述之實施形態乃作一闊示例擧，而非用Μ限制 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公焓） _ -10- B7 五、發明説明（1〇) 本發明之應用範圍者，本發明之範圍另在申請專利範圍有 所敘述，但任何變更，在不脫離申請專利範圍之本意，或 與之相當之情況下，仍應視之為屬涵蓋於下述t辛請專利範 圚之内者。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公f )

Claims (1)

  1. ABCD 經濟部中央標準局員工消費合作社印製 六、申請專利範圍 1 . 一種半導體裝置，係具備有：半導體晶片2 ; Μ及， 該用Μ納置前述半導體晶片1之封裝用構件9; Μ及，配置 於前述封裝用構件9之上，且分別與該半導體晶片2形成電 氣連接狀態之電源端子部1 0及複數個訊號端子部1 2 ; Μ及 與前述電源端子部10形成電氣連接狀態，而被用Μ將電 源供給至前述半導體晶片2，而設於前述封裝用構件9之外 側上之電源配線部1 6 ;並且， 前述電源端子部1 0與電源配線部1 6，係配置在該不同於 其配置有前述訊號端子部12之封裝用構件9之表面的另一 表面上。 2.如申請專利範圍第1項之半導體裝置，其中前述之電 源端子部10與前述之電源配線部16，係配置於該與其配置 有前述訊號端子部12之封裝用構件9之表面圼相對之一表 面上。 3 .如申請專利範圍第2項之半導體裝置，其中係包括有 該形成有用Μ載置著前逑封装用構件9之所規定之配線之 基板14a，並且還設置有前述電源線部16，Μ便於覆蓋住 前述封裝用構件9，同時，與所規定之前述配線，形成電 氣連接狀態。 4.如申請專利範圍第2項之半導體裝置，其中係包括有 :該形成有可分別與前述各個之訊號端子部形成著電氣連 接狀態之所規定配線的第1印刷電路基板.1 4b ; Κ及，該形 成有前述電源配線部15之第二印刷電路基板14c:並且， 該納置有前述半導體晶Η 2之前述封裝用構件9，偽配置 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） _ ·] _ (請先聞讀背面之注意事項再填寫本頁) I -裝. 訂 -ec. ABCD 六、申請專利範圍於前述第1印刷電路基板14b與前述第2印刷電路基板14c之 間。 (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）
TW087107703A 1998-01-08 1998-05-19 Semiconductor device TW383477B (en)

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