TW382817B - Semiconductor device and method of fabricating same - Google Patents

Semiconductor device and method of fabricating same Download PDF

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Publication number
TW382817B
TW382817B TW087112003A TW87112003A TW382817B TW 382817 B TW382817 B TW 382817B TW 087112003 A TW087112003 A TW 087112003A TW 87112003 A TW87112003 A TW 87112003A TW 382817 B TW382817 B TW 382817B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
electrode
layer
film
Prior art date
Application number
TW087112003A
Other languages
English (en)
Chinese (zh)
Inventor
Tadashi Nishimura
Kazuhito Tsutsumi
Yuuichi Hirano
Shigenobu Maeda
Shigeto Maegawa
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW382817B publication Critical patent/TW382817B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Wire Bonding (AREA)
TW087112003A 1998-02-26 1998-07-23 Semiconductor device and method of fabricating same TW382817B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045459A JPH11243208A (ja) 1998-02-26 1998-02-26 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW382817B true TW382817B (en) 2000-02-21

Family

ID=12719953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112003A TW382817B (en) 1998-02-26 1998-07-23 Semiconductor device and method of fabricating same

Country Status (6)

Country Link
US (2) US6459125B2 (https=)
JP (1) JPH11243208A (https=)
KR (2) KR19990071421A (https=)
DE (1) DE19842441B4 (https=)
FR (1) FR2775387B1 (https=)
TW (1) TW382817B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3824845B2 (ja) * 2000-06-21 2006-09-20 セイコーエプソン株式会社 Ｌｃｄドライバｉｃチップ
JP2002270611A (ja) * 2001-03-14 2002-09-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2003045958A (ja) * 2001-07-27 2003-02-14 Denso Corp 半導体装置及びその製造方法
US6762503B2 (en) * 2002-08-29 2004-07-13 Micron Technology, Inc. Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same
US6841874B1 (en) * 2002-11-01 2005-01-11 Amkor Technology, Inc. Wafer-level chip-scale package
DE10308275A1 (de) * 2003-02-26 2004-09-16 Advanced Micro Devices, Inc., Sunnyvale Strahlungsresistentes Halbleiterbauteil
US8093097B2 (en) * 2005-06-15 2012-01-10 Nxp B.V. Layer sequence and method of manufacturing a layer sequence
US7736915B2 (en) * 2006-02-21 2010-06-15 International Business Machines Corporation Method for neutralizing trapped charge in a charge accumulation layer of a semiconductor structure
WO2009027888A2 (en) * 2007-08-24 2009-03-05 Nxp B.V. Solderable structure
JP2009064812A (ja) * 2007-09-04 2009-03-26 Panasonic Corp 半導体装置の電極構造およびその関連技術
US8809182B2 (en) 2008-05-01 2014-08-19 International Business Machines Corporation Pad cushion structure and method of fabrication for Pb-free C4 integrated circuit chip joining
KR101936039B1 (ko) 2012-10-30 2019-01-08 삼성전자 주식회사 반도체 장치
US10163828B2 (en) * 2013-11-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and fabricating method thereof
JP6416800B2 (ja) * 2016-01-26 2018-10-31 株式会社東芝 半導体装置

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
JPS63110734A (ja) 1986-10-29 1988-05-16 Hitachi Ltd 集積回路素子
JPS63229726A (ja) 1987-03-18 1988-09-26 Nec Corp 混成集積回路装置
JPS63262867A (ja) 1987-04-20 1988-10-31 Nec Corp 半導体記憶装置
US5024965A (en) 1990-02-16 1991-06-18 Chang Chen Chi P Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
JPH03272176A (ja) 1990-03-22 1991-12-03 Fujitsu Ltd 半導体装置と基板と基板製造方法
KR100292330B1 (ko) * 1992-05-01 2001-09-17 이데이 노부유끼 반도체장치와그제조방법및실리콘절연기판의제조방법
JP2924506B2 (ja) * 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
JP3321899B2 (ja) * 1992-12-04 2002-09-09 株式会社デンソー 半導体装置
US5426072A (en) 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
JP3269536B2 (ja) 1993-02-19 2002-03-25 株式会社デンソー 半導体装置
US5329423A (en) * 1993-04-13 1994-07-12 Scholz Kenneth D Compressive bump-and-socket interconnection scheme for integrated circuits
US5492863A (en) * 1994-10-19 1996-02-20 Motorola, Inc. Method for forming conductive bumps on a semiconductor device
JPH08139296A (ja) 1994-11-08 1996-05-31 Hitachi Ltd 半導体基板およびそれを用いた半導体集積回路装置
JP3272176B2 (ja) 1994-12-20 2002-04-08 東芝テック株式会社 商品販売登録データ処理装置
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JPH0951083A (ja) 1995-08-10 1997-02-18 Mitsubishi Electric Corp ゲートアレイ型半導体集積回路装置及びその製造方法
US5670812A (en) * 1995-09-29 1997-09-23 International Business Machines Corporation Field effect transistor having contact layer of transistor gate electrode material
JP2748955B2 (ja) 1996-03-21 1998-05-13 株式会社日立製作所 半導体装置
JP2861965B2 (ja) * 1996-09-20 1999-02-24 日本電気株式会社 突起電極の形成方法
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
JPH10294318A (ja) * 1997-04-18 1998-11-04 Toshiba Corp 電子部品
JP3641111B2 (ja) * 1997-08-28 2005-04-20 株式会社ルネサステクノロジ 半導体装置の製造方法
US6204564B1 (en) * 1997-11-21 2001-03-20 Rohm Co., Ltd. Semiconductor device and method for making the same
JPH11243208A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3546783B2 (ja) * 1999-06-09 2004-07-28 セイコーエプソン株式会社 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
DE19842441B4 (de) 2004-07-29
FR2775387B1 (fr) 2002-09-06
US6459125B2 (en) 2002-10-01
KR20010072669A (ko) 2001-07-31
US20020003259A1 (en) 2002-01-10
JPH11243208A (ja) 1999-09-07
KR100377893B1 (ko) 2003-03-29
DE19842441A1 (de) 1999-09-09
US20020110954A1 (en) 2002-08-15
KR19990071421A (ko) 1999-09-27
FR2775387A1 (fr) 1999-08-27

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