TW382764B - Method for forming a metal wire - Google Patents
Method for forming a metal wire Download PDFInfo
- Publication number
- TW382764B TW382764B TW085113237A TW85113237A TW382764B TW 382764 B TW382764 B TW 382764B TW 085113237 A TW085113237 A TW 085113237A TW 85113237 A TW85113237 A TW 85113237A TW 382764 B TW382764 B TW 382764B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- item
- application
- titanium
- tetrakis
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 116
- 239000010936 titanium Substances 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 10
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 5
- 229940059260 amidate Drugs 0.000 claims 5
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 5
- 230000005611 electricity Effects 0.000 claims 5
- NPUKDXXFDDZOKR-LLVKDONJSA-N etomidate Chemical compound CCOC(=O)C1=CN=CN1[C@H](C)C1=CC=CC=C1 NPUKDXXFDDZOKR-LLVKDONJSA-N 0.000 claims 5
- 229910052719 titanium Inorganic materials 0.000 claims 5
- 238000009825 accumulation Methods 0.000 claims 2
- 230000009435 amidation Effects 0.000 claims 2
- 238000007112 amidation reaction Methods 0.000 claims 2
- UIMGJWSPQNXYNK-UHFFFAOYSA-N azane;titanium Chemical compound N.[Ti] UIMGJWSPQNXYNK-UHFFFAOYSA-N 0.000 claims 2
- FWMGWNBHJYBRTH-UHFFFAOYSA-N CC[Ti](CC)(CC)CC Chemical compound CC[Ti](CC)(CC)CC FWMGWNBHJYBRTH-UHFFFAOYSA-N 0.000 claims 1
- HTDDOKCPWUIVBU-UHFFFAOYSA-N CNC.[Ti+4] Chemical compound CNC.[Ti+4] HTDDOKCPWUIVBU-UHFFFAOYSA-N 0.000 claims 1
- 235000014121 butter Nutrition 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 238000013517 stratification Methods 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000003252 repetitive effect Effects 0.000 abstract 1
- 239000011800 void material Substances 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- -1 aluminum gold Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000796 S alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950039165A KR100218728B1 (ko) | 1995-11-01 | 1995-11-01 | 반도체 소자의 금속 배선 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW382764B true TW382764B (en) | 2000-02-21 |
Family
ID=19432609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085113237A TW382764B (en) | 1995-11-01 | 1996-10-30 | Method for forming a metal wire |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2760490B2 (ko) |
| KR (1) | KR100218728B1 (ko) |
| CN (1) | CN1075244C (ko) |
| DE (1) | DE19645033C2 (ko) |
| GB (1) | GB2306777B (ko) |
| TW (1) | TW382764B (ko) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6291343B1 (en) * | 1994-11-14 | 2001-09-18 | Applied Materials, Inc. | Plasma annealing of substrates to improve adhesion |
| GB2322963B (en) * | 1996-09-07 | 1999-02-24 | United Microelectronics Corp | Method of fabricating a conductive plug |
| KR100226742B1 (ko) * | 1996-12-24 | 1999-10-15 | 구본준 | 반도체 소자의 금속배선 형성 방법 |
| NL1005653C2 (nl) * | 1997-03-26 | 1998-09-29 | United Microelectronics Corp | Werkwijze voor het fabriceren van een geleidende contactpen. |
| US5969425A (en) * | 1997-09-05 | 1999-10-19 | Advanced Micro Devices, Inc. | Borderless vias with CVD barrier layer |
| US6037252A (en) * | 1997-11-05 | 2000-03-14 | Tokyo Electron Limited | Method of titanium nitride contact plug formation |
| US6432479B2 (en) | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
| KR100458295B1 (ko) * | 1997-12-30 | 2005-04-06 | 주식회사 하이닉스반도체 | 반도체소자의콘택플러그형성방법 |
| KR100558034B1 (ko) * | 1999-06-30 | 2006-03-07 | 주식회사 하이닉스반도체 | 텅스텐 비트라인 형성시 플러그의 손상을 방지할 수 있는 반도체 소자 제조 방법 |
| US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
| DE10208714B4 (de) * | 2002-02-28 | 2006-08-31 | Infineon Technologies Ag | Herstellungsverfahren für einen Kontakt für eine integrierte Schaltung |
| JP2006344684A (ja) | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| KR100885186B1 (ko) * | 2007-05-03 | 2009-02-23 | 삼성전자주식회사 | 확산 베리어 필름을 포함하는 반도체 소자의 형성 방법 |
| CN101459121B (zh) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 通孔及通孔形成方法 |
| JP5872904B2 (ja) | 2012-01-05 | 2016-03-01 | 東京エレクトロン株式会社 | ＴｉＮ膜の成膜方法および記憶媒体 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
| JPS62265718A (ja) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH04216621A (ja) * | 1990-12-18 | 1992-08-06 | Seiko Instr Inc | 薄膜の堆積方法 |
| US5175126A (en) * | 1990-12-27 | 1992-12-29 | Intel Corporation | Process of making titanium nitride barrier layer |
| US5089438A (en) * | 1991-04-26 | 1992-02-18 | At&T Bell Laboratories | Method of making an article comprising a TiNx layer |
| US5312774A (en) * | 1991-12-05 | 1994-05-17 | Sharp Kabushiki Kaisha | Method for manufacturing a semiconductor device comprising titanium |
| WO1993017453A2 (en) * | 1992-02-26 | 1993-09-02 | Materials Research Corporation | Ammonia plasma treatment of silicide contact surfaces in semiconductor devices |
| EP0571691B1 (en) * | 1992-05-27 | 1996-09-18 | STMicroelectronics S.r.l. | Metallization over tungsten plugs |
| US5416045A (en) * | 1993-02-18 | 1995-05-16 | Micron Technology, Inc. | Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films |
| KR0144956B1 (ko) * | 1994-06-10 | 1998-08-17 | 김광호 | 반도체 장치의 배선 구조 및 그 형성방법 |
| JPH0926387A (ja) * | 1995-07-11 | 1997-01-28 | Tokyo Seimitsu Co Ltd | 液体比重検出方法及び加工液比重検出装置 |
-
1995
- 1995-11-01 KR KR1019950039165A patent/KR100218728B1/ko not_active IP Right Cessation
-
1996
- 1996-10-30 TW TW085113237A patent/TW382764B/zh not_active IP Right Cessation
- 1996-10-30 GB GB9622538A patent/GB2306777B/en not_active Expired - Fee Related
- 1996-10-31 DE DE19645033A patent/DE19645033C2/de not_active Expired - Fee Related
- 1996-11-01 CN CN96120181A patent/CN1075244C/zh not_active Expired - Fee Related
- 1996-11-01 JP JP8292015A patent/JP2760490B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB9622538D0 (en) | 1997-01-08 |
| GB2306777A (en) | 1997-05-07 |
| CN1151610A (zh) | 1997-06-11 |
| JP2760490B2 (ja) | 1998-05-28 |
| DE19645033C2 (de) | 2002-09-12 |
| KR970030327A (ko) | 1997-06-26 |
| DE19645033A1 (de) | 1997-05-07 |
| CN1075244C (zh) | 2001-11-21 |
| JPH09172083A (ja) | 1997-06-30 |
| KR100218728B1 (ko) | 1999-09-01 |
| GB2306777B (en) | 2000-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |