GB2306777B - Method for forming metal wire - Google Patents

Method for forming metal wire

Info

Publication number
GB2306777B
GB2306777B GB9622538A GB9622538A GB2306777B GB 2306777 B GB2306777 B GB 2306777B GB 9622538 A GB9622538 A GB 9622538A GB 9622538 A GB9622538 A GB 9622538A GB 2306777 B GB2306777 B GB 2306777B
Authority
GB
United Kingdom
Prior art keywords
metal wire
forming metal
forming
wire
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9622538A
Other versions
GB9622538D0 (en
GB2306777A (en
Inventor
Jeong Tae Kim
Heung Lak Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9622538D0 publication Critical patent/GB9622538D0/en
Publication of GB2306777A publication Critical patent/GB2306777A/en
Application granted granted Critical
Publication of GB2306777B publication Critical patent/GB2306777B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
GB9622538A 1995-11-01 1996-10-30 Method for forming metal wire Expired - Fee Related GB2306777B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950039165A KR100218728B1 (en) 1995-11-01 1995-11-01 Manufacturing method of metal interconnection of semiconductor device

Publications (3)

Publication Number Publication Date
GB9622538D0 GB9622538D0 (en) 1997-01-08
GB2306777A GB2306777A (en) 1997-05-07
GB2306777B true GB2306777B (en) 2000-03-08

Family

ID=19432609

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9622538A Expired - Fee Related GB2306777B (en) 1995-11-01 1996-10-30 Method for forming metal wire

Country Status (6)

Country Link
JP (1) JP2760490B2 (en)
KR (1) KR100218728B1 (en)
CN (1) CN1075244C (en)
DE (1) DE19645033C2 (en)
GB (1) GB2306777B (en)
TW (1) TW382764B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291343B1 (en) * 1994-11-14 2001-09-18 Applied Materials, Inc. Plasma annealing of substrates to improve adhesion
GB2322963B (en) * 1996-09-07 1999-02-24 United Microelectronics Corp Method of fabricating a conductive plug
KR100226742B1 (en) * 1996-12-24 1999-10-15 구본준 Method for forming metal interconnection layer of semiconductor device
NL1005653C2 (en) * 1997-03-26 1998-09-29 United Microelectronics Corp Conductive plug manufacture
US5969425A (en) * 1997-09-05 1999-10-19 Advanced Micro Devices, Inc. Borderless vias with CVD barrier layer
US6037252A (en) * 1997-11-05 2000-03-14 Tokyo Electron Limited Method of titanium nitride contact plug formation
US6432479B2 (en) * 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
KR100458295B1 (en) * 1997-12-30 2005-04-06 주식회사 하이닉스반도체 Contact plug formation method of semiconductor device
KR100558034B1 (en) * 1999-06-30 2006-03-07 주식회사 하이닉스반도체 Method for forming semiconductor device capable of preventing plug loss during tungsten bit line formation process
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
DE10208714B4 (en) * 2002-02-28 2006-08-31 Infineon Technologies Ag Manufacturing method for a contact for an integrated circuit
JP2006344684A (en) 2005-06-07 2006-12-21 Fujitsu Ltd Semiconductor device and its manufacturing method
KR100885186B1 (en) * 2007-05-03 2009-02-23 삼성전자주식회사 Methods of forming a semiconductor device including a dffiusion barrier film
CN101459121B (en) * 2007-12-13 2010-06-09 中芯国际集成电路制造(上海)有限公司 Through hole and through hole forming method
JP5872904B2 (en) * 2012-01-05 2016-03-01 東京エレクトロン株式会社 Method of forming TiN film and storage medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175126A (en) * 1990-12-27 1992-12-29 Intel Corporation Process of making titanium nitride barrier layer
WO1993017453A2 (en) * 1992-02-26 1993-09-02 Materials Research Corporation Ammonia plasma treatment of silicide contact surfaces in semiconductor devices
EP0571691A1 (en) * 1992-05-27 1993-12-01 STMicroelectronics S.r.l. Metallization over tungsten plugs
GB2290166A (en) * 1994-06-10 1995-12-13 Samsung Electronics Co Ltd Wiring structure and method of manufacture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JPS62265718A (en) * 1986-05-13 1987-11-18 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH04216621A (en) * 1990-12-18 1992-08-06 Seiko Instr Inc Depositing method for thin film
US5089438A (en) * 1991-04-26 1992-02-18 At&T Bell Laboratories Method of making an article comprising a TiNx layer
US5312774A (en) * 1991-12-05 1994-05-17 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device comprising titanium
US5416045A (en) * 1993-02-18 1995-05-16 Micron Technology, Inc. Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films
JPH0926387A (en) * 1995-07-11 1997-01-28 Tokyo Seimitsu Co Ltd Liquid specific gravity detecting method and working fluid specific gravity detector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175126A (en) * 1990-12-27 1992-12-29 Intel Corporation Process of making titanium nitride barrier layer
WO1993017453A2 (en) * 1992-02-26 1993-09-02 Materials Research Corporation Ammonia plasma treatment of silicide contact surfaces in semiconductor devices
EP0571691A1 (en) * 1992-05-27 1993-12-01 STMicroelectronics S.r.l. Metallization over tungsten plugs
GB2290166A (en) * 1994-06-10 1995-12-13 Samsung Electronics Co Ltd Wiring structure and method of manufacture

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
INSPEC abstract no A9607-8115H-005 & App.Phys.Lett.,vol 68, no7,pp1015-16. M Danek et al. *
INSPEC abstract no A9624-8115H-034 & Journal of the Electrochemical Society, vol143,no9,ppL188-90 *
MRS Bulletin, vol 20, no 11, pp 38-41, M Eizenberg. *

Also Published As

Publication number Publication date
CN1075244C (en) 2001-11-21
DE19645033A1 (en) 1997-05-07
GB9622538D0 (en) 1997-01-08
KR100218728B1 (en) 1999-09-01
GB2306777A (en) 1997-05-07
KR970030327A (en) 1997-06-26
JPH09172083A (en) 1997-06-30
JP2760490B2 (en) 1998-05-28
CN1151610A (en) 1997-06-11
DE19645033C2 (en) 2002-09-12
TW382764B (en) 2000-02-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20101030