GB2306777B - Method for forming metal wire - Google Patents
Method for forming metal wireInfo
- Publication number
- GB2306777B GB2306777B GB9622538A GB9622538A GB2306777B GB 2306777 B GB2306777 B GB 2306777B GB 9622538 A GB9622538 A GB 9622538A GB 9622538 A GB9622538 A GB 9622538A GB 2306777 B GB2306777 B GB 2306777B
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal wire
- forming metal
- forming
- wire
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950039165A KR100218728B1 (en) | 1995-11-01 | 1995-11-01 | Manufacturing method of metal interconnection of semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9622538D0 GB9622538D0 (en) | 1997-01-08 |
GB2306777A GB2306777A (en) | 1997-05-07 |
GB2306777B true GB2306777B (en) | 2000-03-08 |
Family
ID=19432609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9622538A Expired - Fee Related GB2306777B (en) | 1995-11-01 | 1996-10-30 | Method for forming metal wire |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2760490B2 (en) |
KR (1) | KR100218728B1 (en) |
CN (1) | CN1075244C (en) |
DE (1) | DE19645033C2 (en) |
GB (1) | GB2306777B (en) |
TW (1) | TW382764B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6291343B1 (en) * | 1994-11-14 | 2001-09-18 | Applied Materials, Inc. | Plasma annealing of substrates to improve adhesion |
GB2322963B (en) * | 1996-09-07 | 1999-02-24 | United Microelectronics Corp | Method of fabricating a conductive plug |
KR100226742B1 (en) * | 1996-12-24 | 1999-10-15 | 구본준 | Method for forming metal interconnection layer of semiconductor device |
NL1005653C2 (en) * | 1997-03-26 | 1998-09-29 | United Microelectronics Corp | Conductive plug manufacture |
US5969425A (en) * | 1997-09-05 | 1999-10-19 | Advanced Micro Devices, Inc. | Borderless vias with CVD barrier layer |
US6037252A (en) * | 1997-11-05 | 2000-03-14 | Tokyo Electron Limited | Method of titanium nitride contact plug formation |
US6432479B2 (en) * | 1997-12-02 | 2002-08-13 | Applied Materials, Inc. | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film |
KR100458295B1 (en) * | 1997-12-30 | 2005-04-06 | 주식회사 하이닉스반도체 | Contact plug formation method of semiconductor device |
KR100558034B1 (en) * | 1999-06-30 | 2006-03-07 | 주식회사 하이닉스반도체 | Method for forming semiconductor device capable of preventing plug loss during tungsten bit line formation process |
US6436819B1 (en) | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
DE10208714B4 (en) * | 2002-02-28 | 2006-08-31 | Infineon Technologies Ag | Manufacturing method for a contact for an integrated circuit |
JP2006344684A (en) | 2005-06-07 | 2006-12-21 | Fujitsu Ltd | Semiconductor device and its manufacturing method |
KR100885186B1 (en) * | 2007-05-03 | 2009-02-23 | 삼성전자주식회사 | Methods of forming a semiconductor device including a dffiusion barrier film |
CN101459121B (en) * | 2007-12-13 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Through hole and through hole forming method |
JP5872904B2 (en) * | 2012-01-05 | 2016-03-01 | 東京エレクトロン株式会社 | Method of forming TiN film and storage medium |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5175126A (en) * | 1990-12-27 | 1992-12-29 | Intel Corporation | Process of making titanium nitride barrier layer |
WO1993017453A2 (en) * | 1992-02-26 | 1993-09-02 | Materials Research Corporation | Ammonia plasma treatment of silicide contact surfaces in semiconductor devices |
EP0571691A1 (en) * | 1992-05-27 | 1993-12-01 | STMicroelectronics S.r.l. | Metallization over tungsten plugs |
GB2290166A (en) * | 1994-06-10 | 1995-12-13 | Samsung Electronics Co Ltd | Wiring structure and method of manufacture |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
JPS62265718A (en) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH04216621A (en) * | 1990-12-18 | 1992-08-06 | Seiko Instr Inc | Depositing method for thin film |
US5089438A (en) * | 1991-04-26 | 1992-02-18 | At&T Bell Laboratories | Method of making an article comprising a TiNx layer |
US5312774A (en) * | 1991-12-05 | 1994-05-17 | Sharp Kabushiki Kaisha | Method for manufacturing a semiconductor device comprising titanium |
US5416045A (en) * | 1993-02-18 | 1995-05-16 | Micron Technology, Inc. | Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films |
JPH0926387A (en) * | 1995-07-11 | 1997-01-28 | Tokyo Seimitsu Co Ltd | Liquid specific gravity detecting method and working fluid specific gravity detector |
-
1995
- 1995-11-01 KR KR1019950039165A patent/KR100218728B1/en not_active IP Right Cessation
-
1996
- 1996-10-30 TW TW085113237A patent/TW382764B/en not_active IP Right Cessation
- 1996-10-30 GB GB9622538A patent/GB2306777B/en not_active Expired - Fee Related
- 1996-10-31 DE DE19645033A patent/DE19645033C2/en not_active Expired - Fee Related
- 1996-11-01 JP JP8292015A patent/JP2760490B2/en not_active Expired - Fee Related
- 1996-11-01 CN CN96120181A patent/CN1075244C/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5175126A (en) * | 1990-12-27 | 1992-12-29 | Intel Corporation | Process of making titanium nitride barrier layer |
WO1993017453A2 (en) * | 1992-02-26 | 1993-09-02 | Materials Research Corporation | Ammonia plasma treatment of silicide contact surfaces in semiconductor devices |
EP0571691A1 (en) * | 1992-05-27 | 1993-12-01 | STMicroelectronics S.r.l. | Metallization over tungsten plugs |
GB2290166A (en) * | 1994-06-10 | 1995-12-13 | Samsung Electronics Co Ltd | Wiring structure and method of manufacture |
Non-Patent Citations (3)
Title |
---|
INSPEC abstract no A9607-8115H-005 & App.Phys.Lett.,vol 68, no7,pp1015-16. M Danek et al. * |
INSPEC abstract no A9624-8115H-034 & Journal of the Electrochemical Society, vol143,no9,ppL188-90 * |
MRS Bulletin, vol 20, no 11, pp 38-41, M Eizenberg. * |
Also Published As
Publication number | Publication date |
---|---|
CN1075244C (en) | 2001-11-21 |
DE19645033A1 (en) | 1997-05-07 |
GB9622538D0 (en) | 1997-01-08 |
KR100218728B1 (en) | 1999-09-01 |
GB2306777A (en) | 1997-05-07 |
KR970030327A (en) | 1997-06-26 |
JPH09172083A (en) | 1997-06-30 |
JP2760490B2 (en) | 1998-05-28 |
CN1151610A (en) | 1997-06-11 |
DE19645033C2 (en) | 2002-09-12 |
TW382764B (en) | 2000-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
PL323178A1 (en) | Schirophrenia diagnosin method | |
GB2303124B (en) | Method for producing metal oxide powders | |
HU9600696D0 (en) | Method for making shaped metal box | |
GB2306777B (en) | Method for forming metal wire | |
GB9519638D0 (en) | Method | |
GB9518442D0 (en) | Method | |
GB2308562B (en) | Welding method | |
HUP9600755A2 (en) | Wire-drawing machine for dry-lubricated metal wire | |
GB2308522B (en) | Redialling method | |
GB9601976D0 (en) | Method | |
HU9601970D0 (en) | Method for producing bended pipe piece | |
GB9510727D0 (en) | Method | |
IL118882A0 (en) | Method for soldering | |
AP9701121A0 (en) | Method for prearing streptogramines | |
GB9511828D0 (en) | Method | |
GB9722553D0 (en) | Method | |
PL56654Y1 (en) | Apparatus for straightening metal strips | |
TW310708U (en) | Metal wire binding machine | |
HUP9700032A3 (en) | Method for producing metal flakes | |
GB9526083D0 (en) | Method | |
GB9509313D0 (en) | Method | |
GB9519458D0 (en) | Method | |
GB9519145D0 (en) | Method | |
GB9520303D0 (en) | Optimsation method | |
GB9517777D0 (en) | Method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20101030 |