TW371372B - A reference current generator circuit - Google Patents

A reference current generator circuit

Info

Publication number
TW371372B
TW371372B TW085112409A TW85112409A TW371372B TW 371372 B TW371372 B TW 371372B TW 085112409 A TW085112409 A TW 085112409A TW 85112409 A TW85112409 A TW 85112409A TW 371372 B TW371372 B TW 371372B
Authority
TW
Taiwan
Prior art keywords
control circuit
nmos transistor
current
varying
reference current
Prior art date
Application number
TW085112409A
Other languages
English (en)
Inventor
Kiyoshi Kanno
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Application granted granted Critical
Publication of TW371372B publication Critical patent/TW371372B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)
TW085112409A 1995-10-11 1996-10-11 A reference current generator circuit TW371372B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7289318A JP2917877B2 (ja) 1995-10-11 1995-10-11 基準電流発生回路

Publications (1)

Publication Number Publication Date
TW371372B true TW371372B (en) 1999-10-01

Family

ID=17741645

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085112409A TW371372B (en) 1995-10-11 1996-10-11 A reference current generator circuit

Country Status (5)

Country Link
US (1) US6377113B1 (zh)
EP (1) EP0768593A3 (zh)
JP (1) JP2917877B2 (zh)
KR (1) KR100225825B1 (zh)
TW (1) TW371372B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置
JP3903770B2 (ja) * 2001-11-08 2007-04-11 日本電気株式会社 データ線駆動回路
KR100543318B1 (ko) * 2002-10-07 2006-01-20 주식회사 하이닉스반도체 부스팅 전압 제어회로
US6891357B2 (en) * 2003-04-17 2005-05-10 International Business Machines Corporation Reference current generation system and method
US7061304B2 (en) * 2004-01-28 2006-06-13 International Business Machines Corporation Fuse latch with compensated programmable resistive trip point
JP4385811B2 (ja) * 2004-03-24 2009-12-16 株式会社デンソー 定電流回路
EP1756799A4 (en) * 2004-05-19 2008-06-11 Sharp Kk LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR EXCITATION THEREOF, LIQUID CRYSTAL TELEVISION COMPRISING LIQUID CRYSTAL DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY COMPRISING THE LIQUID CRYSTAL DISPLAY DEVICE
US7296247B1 (en) * 2004-08-17 2007-11-13 Xilinx, Inc. Method and apparatus to improve pass transistor performance
KR100775057B1 (ko) 2004-12-13 2007-11-08 삼성전자주식회사 트랜지스터 정합 특성이 향상된 데이터 드라이브 집적회로를 구비한 디스플레이 장치
JP4848689B2 (ja) * 2005-07-11 2011-12-28 セイコーエプソン株式会社 半導体集積回路
JP2007226627A (ja) * 2006-02-24 2007-09-06 Seiko Instruments Inc ボルテージレギュレータ
JP5088031B2 (ja) * 2007-08-01 2012-12-05 富士電機株式会社 定電流・定電圧回路
JP5318676B2 (ja) * 2009-06-25 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2011015259A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置およびその試験方法
JP2011053957A (ja) 2009-09-02 2011-03-17 Toshiba Corp 参照電流生成回路
KR101389620B1 (ko) * 2011-10-28 2014-04-29 에스케이하이닉스 주식회사 멀티 레귤레이터 회로 및 이를 구비한 집적회로
JP6232925B2 (ja) * 2013-10-28 2017-11-22 富士電機株式会社 入力回路
US9252713B2 (en) 2014-02-27 2016-02-02 Qualcomm Incorporated Bias circuits and methods for stacked devices
CN107742498B (zh) * 2017-11-24 2021-02-09 京东方科技集团股份有限公司 参考电压电路、参考电压提供模组和显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463662A (en) * 1977-10-28 1979-05-22 Nec Corp Current supply circuit
US4198622A (en) * 1978-02-21 1980-04-15 National Semiconductor Corporation Double digital-to-analog converter
US4354175A (en) 1980-05-01 1982-10-12 Mostek Corporation Analog/digital converter utilizing a single column of analog switches
US4331913A (en) * 1980-10-02 1982-05-25 Bell Telephone Laboratories, Incorporated Precision negative impedance circuit with calibration
JPS5966725A (ja) 1982-10-07 1984-04-16 Nippon Denso Co Ltd 定電流回路
JPS6331224A (ja) 1986-07-24 1988-02-09 Fuji Electric Co Ltd Ａ／ｄ変換サンプル値の精度改善方式
JPH02145012A (ja) * 1988-11-26 1990-06-04 Nec Corp 基準電圧トリミング回路
JPH03172906A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd トリミング回路
JP3365804B2 (ja) 1993-01-12 2003-01-14 株式会社日立製作所 通信回線駆動回路、及びインタフェース用ｌｓｉ、並びに通信端末装置
JPH06243678A (ja) * 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍとそのプレート電圧設定方法及び情報処理システム
JP3156447B2 (ja) * 1993-06-17 2001-04-16 富士通株式会社 半導体集積回路
JPH07170188A (ja) 1993-12-14 1995-07-04 Yamaha Corp Ｄａコンバータ回路
US5640122A (en) * 1994-12-16 1997-06-17 Sgs-Thomson Microelectronics, Inc. Circuit for providing a bias voltage compensated for p-channel transistor variations
US5568084A (en) * 1994-12-16 1996-10-22 Sgs-Thomson Microelectronics, Inc. Circuit for providing a compensated bias voltage
US5504447A (en) * 1995-06-07 1996-04-02 United Memories Inc. Transistor programmable divider circuit

Also Published As

Publication number Publication date
EP0768593A2 (en) 1997-04-16
EP0768593A3 (en) 1998-01-21
KR100225825B1 (ko) 1999-10-15
JPH09106316A (ja) 1997-04-22
JP2917877B2 (ja) 1999-07-12
KR970023370A (ko) 1997-05-30
US6377113B1 (en) 2002-04-23

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