TW370476B - Coating liquid for forming a low dielectric constant silica film and a substrate having a low dielectric constant film - Google Patents

Coating liquid for forming a low dielectric constant silica film and a substrate having a low dielectric constant film

Info

Publication number
TW370476B
TW370476B TW086103557A TW86103557A TW370476B TW 370476 B TW370476 B TW 370476B TW 086103557 A TW086103557 A TW 086103557A TW 86103557 A TW86103557 A TW 86103557A TW 370476 B TW370476 B TW 370476B
Authority
TW
Taiwan
Prior art keywords
dielectric constant
low dielectric
coating liquid
forming
silica film
Prior art date
Application number
TW086103557A
Other languages
English (en)
Inventor
Miki Egami
Akira Nakashima
Michio Komatsu
Original Assignee
Fujitsu Ltd
Catalysts & Chem Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Catalysts & Chem Ind Co filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of TW370476B publication Critical patent/TW370476B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Silicon Compounds (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Formation Of Insulating Films (AREA)
TW086103557A 1996-03-25 1997-03-21 Coating liquid for forming a low dielectric constant silica film and a substrate having a low dielectric constant film TW370476B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9478496 1996-03-25
JP29968496A JP3813268B2 (ja) 1996-03-25 1996-10-24 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材

Publications (1)

Publication Number Publication Date
TW370476B true TW370476B (en) 1999-09-21

Family

ID=26436020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103557A TW370476B (en) 1996-03-25 1997-03-21 Coating liquid for forming a low dielectric constant silica film and a substrate having a low dielectric constant film

Country Status (5)

Country Link
US (1) US6261357B1 (zh)
EP (1) EP0890623A4 (zh)
JP (1) JP3813268B2 (zh)
TW (1) TW370476B (zh)
WO (1) WO1997035939A1 (zh)

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KR100600631B1 (ko) 1998-04-24 2006-07-13 쇼쿠바이가세고교 가부시키가이샤 저유전율 실리카계 피막 형성용 도포액 및 저유전율피막으로 도포된 기재
TWI234787B (en) 1998-05-26 2005-06-21 Tokyo Ohka Kogyo Co Ltd Silica-based coating film on substrate and coating solution therefor
KR100618301B1 (ko) * 1998-09-01 2006-08-31 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 지니는 실리카-포함 필름을 형성하기위한 코팅 액체 및 그의 필름으로 코팅된 기질
EP1035183B1 (en) * 1998-09-25 2009-11-25 JGC Catalysts and Chemicals Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
EP1152044A4 (en) * 1998-11-04 2004-12-22 Matsushita Electric Ind Co Ltd SOLUTION FOR FORMING A SILICA COATING FILM, PROCESS FOR PRODUCING THE SAME, AND SILICA COATING FILM AND METHOD FOR PRODUCING THE SAME
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KR100683428B1 (ko) * 1999-10-25 2007-02-20 다우 코닝 코포레이션 용액 용해도와 안정성이 우수한 실리콘 수지 조성물
JP2001181577A (ja) 1999-12-27 2001-07-03 Sumitomo Chem Co Ltd 多孔質有機膜形成用塗布液および多孔質有機膜の形成方法
EP1197999B1 (en) 1999-12-28 2010-02-17 JGC Catalysts and Chemicals Ltd. Method of forming low-dielectric-constant film, and semiconductor substrate with low-dielectric-constant film
KR100468795B1 (ko) * 2000-04-28 2005-02-02 미쓰이 가가쿠 가부시키가이샤 발수성 다공질 실리카, 그의 제조 방법, 및 그의 용도
JP4530113B2 (ja) * 2000-07-06 2010-08-25 Ｊｓｒ株式会社 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
KR100397372B1 (ko) * 2000-09-09 2003-09-13 학교법인 포항공과대학교 다면체 구조의 실세시퀴옥산을 포함하는 저유전재료 및이를 이용한 초저유전박막의 제조방법
JP2003100865A (ja) 2001-09-21 2003-04-04 Catalysts & Chem Ind Co Ltd 半導体基板の製造方法および半導体基板
JP3859540B2 (ja) 2002-05-14 2006-12-20 松下電器産業株式会社 低誘電率絶縁膜形成用材料
JP4170734B2 (ja) * 2002-11-13 2008-10-22 信越化学工業株式会社 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置
US6825130B2 (en) 2002-12-12 2004-11-30 Asm Japan K.K. CVD of porous dielectric materials
JP4737361B2 (ja) * 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
KR100572801B1 (ko) * 2003-12-23 2006-04-19 삼성코닝 주식회사 기계적 특성이 우수한 절연막 코팅 조성물
JP4157048B2 (ja) 2004-01-27 2008-09-24 信越化学工業株式会社 多孔質膜形成用組成物、その製造方法、多孔質膜及び半導体装置
ZA200701244B (en) * 2004-08-16 2008-07-30 Honeywell Int Inc Method of preventing frost formation and facilitating the removal of winter precipitation relative to a windshield and compositions for use therein
WO2006039507A2 (en) 2004-10-01 2006-04-13 Phenomenex, Inc. Ph stable chromatographic media using templated multilayer organic/inorganic grafting
JP4756128B2 (ja) * 2004-10-20 2011-08-24 日揮触媒化成株式会社 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜
JP2006188700A (ja) * 2005-01-03 2006-07-20 Samsung Electro Mech Co Ltd 硫化物系蛍光体の被膜形成方法及び表面コーティング硫化物系蛍光体
JP4563894B2 (ja) * 2005-08-19 2010-10-13 富士通株式会社 シリカ系被膜の製造方法および半導体装置の製造方法
JP2007138144A (ja) * 2005-10-18 2007-06-07 Hitachi Chem Co Ltd シリカ系被膜形成用組成物
KR100589513B1 (ko) * 2005-11-29 2006-06-14 대영씨엔이(주) 질소산화물 제거를 위한 선택적 촉매환원반응용 촉매를이용한 코팅제 조성물, 그 선택적 촉매환원반응용 촉매모듈 소자, 및 그 선택적 촉매환원반응용 촉매 모듈
US8686101B2 (en) 2005-12-22 2014-04-01 Jgc Catalysts And Chemicals Ltd. Coating liquid for forming low dielectric constant amorphous silica-based coating film and the coating film obtained from the same
JP2006210947A (ja) * 2006-04-17 2006-08-10 Matsushita Electric Ind Co Ltd 低誘電率絶縁膜及びその形成方法、並びに半導体装置
JP2008205008A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置
JP2008201832A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置
JP2008201833A (ja) * 2007-02-16 2008-09-04 Shin Etsu Chem Co Ltd 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置
JP5231748B2 (ja) * 2007-04-03 2013-07-10 信越化学工業株式会社 ゼオライト微粒子の製造方法、安定化されたゼオライト及びその利用方法
JP5695290B2 (ja) * 2007-09-20 2015-04-01 日揮触媒化成株式会社 シリカ系被膜形成用塗布液の調製方法
JP4950136B2 (ja) * 2008-06-18 2012-06-13 信越ポリマー株式会社 低誘電率絶縁膜
JP5761890B2 (ja) * 2008-06-27 2015-08-12 日揮触媒化成株式会社 シリカ系塗膜形成用塗布液の調製方法
JP5709351B2 (ja) * 2008-12-25 2015-04-30 日揮触媒化成株式会社 マイクロレンズアレイにシリカ系透明被膜を形成するための塗布液の製造方法
JP5606347B2 (ja) 2011-01-27 2014-10-15 株式会社東芝 半導体装置およびその製造方法

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DE3537626A1 (de) * 1984-10-26 1986-04-30 Merck Patent Gmbh, 6100 Darmstadt Beschichtungsloesungen
JP3163579B2 (ja) 1990-03-13 2001-05-08 触媒化成工業株式会社 被膜形成用塗布液
JPH0766188A (ja) 1993-08-26 1995-03-10 Catalysts & Chem Ind Co Ltd 半導体装置
AU3460095A (en) 1994-06-30 1996-01-25 Hitachi Chemical Company, Ltd. Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
JPH08283661A (ja) 1995-04-12 1996-10-29 Nippon Soda Co Ltd 被覆用組成物

Also Published As

Publication number Publication date
JP3813268B2 (ja) 2006-08-23
EP0890623A1 (en) 1999-01-13
EP0890623A4 (en) 1999-09-08
WO1997035939A1 (fr) 1997-10-02
US6261357B1 (en) 2001-07-17
JPH09315812A (ja) 1997-12-09

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