TW366595B - NAND type non-volatile memory device - Google Patents
NAND type non-volatile memory deviceInfo
- Publication number
- TW366595B TW366595B TW085102249A TW85102249A TW366595B TW 366595 B TW366595 B TW 366595B TW 085102249 A TW085102249 A TW 085102249A TW 85102249 A TW85102249 A TW 85102249A TW 366595 B TW366595 B TW 366595B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- volatile memory
- type non
- nand type
- drain region
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950008400A KR0147627B1 (ko) | 1995-04-11 | 1995-04-11 | 낸드형 불휘발성 기억장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366595B true TW366595B (en) | 1999-08-11 |
Family
ID=19411930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085102249A TW366595B (en) | 1995-04-11 | 1996-02-27 | NAND type non-volatile memory device |
Country Status (4)
Country | Link |
---|---|
US (1) | US5751045A (zh) |
JP (1) | JP3954126B2 (zh) |
KR (1) | KR0147627B1 (zh) |
TW (1) | TW366595B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10061529A1 (de) * | 2000-12-11 | 2002-06-27 | Infineon Technologies Ag | Feldeffekt gesteuertes Halbleiterbauelement und Verfahren |
KR100683852B1 (ko) * | 2004-07-02 | 2007-02-15 | 삼성전자주식회사 | 반도체 소자의 마스크롬 소자 및 그 형성 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723147B2 (ja) * | 1986-06-25 | 1998-03-09 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP2706460B2 (ja) * | 1988-03-14 | 1998-01-28 | 富士通株式会社 | イオン注入方法 |
US5245207A (en) * | 1989-04-21 | 1993-09-14 | Nobuo Mikoshiba | Integrated circuit |
JPH0729999A (ja) * | 1993-07-15 | 1995-01-31 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2643907B2 (ja) * | 1995-05-12 | 1997-08-25 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-04-11 KR KR1019950008400A patent/KR0147627B1/ko not_active IP Right Cessation
-
1996
- 1996-02-21 US US08/604,301 patent/US5751045A/en not_active Expired - Lifetime
- 1996-02-27 TW TW085102249A patent/TW366595B/zh not_active IP Right Cessation
- 1996-02-28 JP JP04129096A patent/JP3954126B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5751045A (en) | 1998-05-12 |
KR0147627B1 (ko) | 1998-11-02 |
JPH08288409A (ja) | 1996-11-01 |
JP3954126B2 (ja) | 2007-08-08 |
KR960039007A (ko) | 1996-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |