GB2022922A - A field-effect transistor forming a memory point and a process for its production - Google Patents

A field-effect transistor forming a memory point and a process for its production

Info

Publication number
GB2022922A
GB2022922A GB7920008A GB7920008A GB2022922A GB 2022922 A GB2022922 A GB 2022922A GB 7920008 A GB7920008 A GB 7920008A GB 7920008 A GB7920008 A GB 7920008A GB 2022922 A GB2022922 A GB 2022922A
Authority
GB
United Kingdom
Prior art keywords
production
field
effect transistor
transistor forming
memory point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7920008A
Other versions
GB2022922B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB2022922A publication Critical patent/GB2022922A/en
Application granted granted Critical
Publication of GB2022922B publication Critical patent/GB2022922B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

An IGFET, having a floating gate 29 and a control 23, has a highly doped p (or n) region 20 aligned with the edges of the p (or n) channel region between source region 21 and drain region 22. <IMAGE>
GB7920008A 1978-06-09 1979-06-08 Field-effect pransistor forming a memory point and a process for its production Expired GB2022922B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7817279A FR2428327A1 (en) 1978-06-09 1978-06-09 FIELD EFFECT TRANSISTOR CONSTITUTING A MEMORY POINT AND ITS MANUFACTURING METHOD

Publications (2)

Publication Number Publication Date
GB2022922A true GB2022922A (en) 1979-12-19
GB2022922B GB2022922B (en) 1982-08-04

Family

ID=9209295

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7920008A Expired GB2022922B (en) 1978-06-09 1979-06-08 Field-effect pransistor forming a memory point and a process for its production

Country Status (5)

Country Link
JP (1) JPS54162977A (en)
CA (1) CA1147465A (en)
DE (1) DE2923365A1 (en)
FR (1) FR2428327A1 (en)
GB (1) GB2022922B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
WO2000038245A1 (en) * 1998-12-21 2000-06-29 Lattice Semiconductor Corporation Dual pocket, two sided program/erase non-volatile memory cell
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6215700B1 (en) 1999-01-07 2001-04-10 Vantis Corporation PMOS avalanche programmed floating gate memory cell structure
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6326663B1 (en) 1999-03-26 2001-12-04 Vantis Corporation Avalanche injection EEPROM memory cell with P-type control gate
US6424000B1 (en) 1999-05-11 2002-07-23 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1390135A (en) * 1971-05-08 1975-04-09 Matsushita Electric Ind Co Ltd Insulated gate semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
US6387763B1 (en) 1998-11-19 2002-05-14 Stmicroelectronics S.R.L. Field-effect transistor and corresponding manufacturing method
US6737715B2 (en) 1998-11-19 2004-05-18 Stmicroelectronics S.R.L. Field-effect transistor and corresponding manufacturing method
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
WO2000038245A1 (en) * 1998-12-21 2000-06-29 Lattice Semiconductor Corporation Dual pocket, two sided program/erase non-volatile memory cell
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6282123B1 (en) 1998-12-21 2001-08-28 Lattice Semiconductor Corporation Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6215700B1 (en) 1999-01-07 2001-04-10 Vantis Corporation PMOS avalanche programmed floating gate memory cell structure
US6326663B1 (en) 1999-03-26 2001-12-04 Vantis Corporation Avalanche injection EEPROM memory cell with P-type control gate
US6424000B1 (en) 1999-05-11 2002-07-23 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof

Also Published As

Publication number Publication date
FR2428327A1 (en) 1980-01-04
FR2428327B1 (en) 1982-04-23
DE2923365A1 (en) 1979-12-20
JPS54162977A (en) 1979-12-25
CA1147465A (en) 1983-05-31
GB2022922B (en) 1982-08-04

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19990607