TW279269B - Programming/erasing method of EEPROM with thin film transistor - Google Patents

Programming/erasing method of EEPROM with thin film transistor

Info

Publication number
TW279269B
TW279269B TW84111317A TW84111317A TW279269B TW 279269 B TW279269 B TW 279269B TW 84111317 A TW84111317 A TW 84111317A TW 84111317 A TW84111317 A TW 84111317A TW 279269 B TW279269 B TW 279269B
Authority
TW
Taiwan
Prior art keywords
thin film
film transistor
programming
eeprom
erasing method
Prior art date
Application number
TW84111317A
Other languages
Chinese (zh)
Inventor
Guei-Jang Liang
Yeu-Haw Yang
Sen-Hwang Hwang
Chorng-Yeu Wu
Original Assignee
Guei-Jang Liang
Yeu-Haw Yang
Sen-Hwang Hwang
Chorng-Yeu Wu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guei-Jang Liang, Yeu-Haw Yang, Sen-Hwang Hwang, Chorng-Yeu Wu filed Critical Guei-Jang Liang
Priority to TW84111317A priority Critical patent/TW279269B/en
Application granted granted Critical
Publication of TW279269B publication Critical patent/TW279269B/en

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Abstract

A programming/erasing method of EEPROM with thin film transistor, that includes one floating gate formed by polysilicon and one thin film transistor formed by polysilicon and located above floating gate, comprises of: on programming, connecting source and drain electrode of thin film transistor to form control gate; on erasing, connecting source and drain electrode of substratetransistor to from control gate.
TW84111317A 1995-10-27 1995-10-27 Programming/erasing method of EEPROM with thin film transistor TW279269B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84111317A TW279269B (en) 1995-10-27 1995-10-27 Programming/erasing method of EEPROM with thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84111317A TW279269B (en) 1995-10-27 1995-10-27 Programming/erasing method of EEPROM with thin film transistor

Publications (1)

Publication Number Publication Date
TW279269B true TW279269B (en) 1996-06-21

Family

ID=51397513

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84111317A TW279269B (en) 1995-10-27 1995-10-27 Programming/erasing method of EEPROM with thin film transistor

Country Status (1)

Country Link
TW (1) TW279269B (en)

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