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A programming/erasing method of EEPROM with thin film transistor, that includes one floating gate formed by polysilicon and one thin film transistor formed by polysilicon and located above floating gate, comprises of: on programming, connecting source and drain electrode of thin film transistor to form control gate; on erasing, connecting source and drain electrode of substratetransistor to from control gate.
TW84111317A1995-10-271995-10-27Programming/erasing method of EEPROM with thin film transistor
TW279269B
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