TW369720B - Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory - Google Patents

Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory

Info

Publication number
TW369720B
TW369720B TW085101291A TW85101291A TW369720B TW 369720 B TW369720 B TW 369720B TW 085101291 A TW085101291 A TW 085101291A TW 85101291 A TW85101291 A TW 85101291A TW 369720 B TW369720 B TW 369720B
Authority
TW
Taiwan
Prior art keywords
gate type
type transistor
split gate
gate
making
Prior art date
Application number
TW085101291A
Other languages
Chinese (zh)
Inventor
Kenji Fukase
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08008581A external-priority patent/JP3133667B2/en
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW369720B publication Critical patent/TW369720B/en

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

This invention aims to seek the high integration of split gate type flash EEPROM by forming a source electrode area 3, a drain electrode area 4 on the substrate, and a floating gate 8 is formed by oxide film 6 on the channel region 5 sandwiched between the source electrode 3 and drain electrode 4. A control gate 9 is formed on the floating gate 8 via oxide film 7. A part of the control gate 9 constructs the selection gate 10 arranged on channel region 5 via oxide films 6 and 7. A selection transistor 11 is constructed by selection gate 10 which is constructed by side walls 12 and 13 of floating gate 8 and side of oxide 7, as well as the part 14 that covers the side walls 12 and 13.
TW085101291A 1996-01-22 1996-02-02 Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory TW369720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08008581A JP3133667B2 (en) 1995-02-23 1996-01-22 Split gate transistor, method of manufacturing split gate transistor, and nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
TW369720B true TW369720B (en) 1999-09-11

Family

ID=57941444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101291A TW369720B (en) 1996-01-22 1996-02-02 Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory

Country Status (1)

Country Link
TW (1) TW369720B (en)

Similar Documents

Publication Publication Date Title
TW329521B (en) Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory.
ATE239970T1 (en) SCALABLE FLASH EEPROM MEMORY CELL AND ITS PRODUCTION PROCESS AND APPLICATION
WO2003041176A3 (en) A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same
ATE196036T1 (en) NON-VOLATILE PMOS MEMORY DEVICE WITH A SINGLE POLYSILICON LAYER
DE69613947T2 (en) Programmable by hot electron injection and erasable by tunnel effect PMOS memory cell
TW363229B (en) PMOS single-poly non-volatile memory structure
TW285777B (en) PMOS flash EEPROM cell with single poly
EP0045578A3 (en) Semiconductor memory device
EP1267410A3 (en) Non-volatile semiconductor memory having programming region for injecting and ejecting carrier into and from floating gate
EP0182198A3 (en) Single transistor electrically programmable device and method
EP0558404A3 (en) Single transistor flash electrically programmable memory
ATE168215T1 (en) ELECTRICALLY CHANGEABLE SINGLE-TRANSISTOR SEMICONDUCTOR SOLID-VALUE MEMORY ARRANGEMENT
SE7900806L (en) MOS TRANSISTOR
DE59711553D1 (en) SELF-ADJUSTED NON-VOLATILE STORAGE CELL
JP2504599B2 (en) Nonvolatile semiconductor memory device
WO2001006542A3 (en) Method for producing a vertical semiconductor transistor component element and a vertical semiconductor transistor component
TW369720B (en) Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory
ES2133971T3 (en) ERASABLE AND ELECTRICALLY PROGRAMMABLE NON-VOLATILE MEMORY CELL.
WO2005101422A3 (en) Non-volatile memory array
DE69133003T2 (en) NON-VOLATILE ELECTRICALLY CHANGEABLE SINGLE TRANSISTOR SEMICONDUCTOR MEMORY ARRANGEMENT WITH RECRISTALLIZED FLOATING GATE
TW250588B (en) Process of flash memory cell
FR2380639A2 (en) N-Channel storage FET matrix
TW229322B (en) Manufacturing method for offset-type source and drain of non-volatile memory
KR970018625A (en) Ipyrom semiconductor device and manufacturing method thereof
TW335538B (en) Flash memory