FR2380639A2 - N-Channel storage FET matrix - Google Patents

N-Channel storage FET matrix

Info

Publication number
FR2380639A2
FR2380639A2 FR7802924A FR7802924A FR2380639A2 FR 2380639 A2 FR2380639 A2 FR 2380639A2 FR 7802924 A FR7802924 A FR 7802924A FR 7802924 A FR7802924 A FR 7802924A FR 2380639 A2 FR2380639 A2 FR 2380639A2
Authority
FR
France
Prior art keywords
type
channel storage
surrounded
fet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7802924A
Other languages
French (fr)
Other versions
FR2380639B2 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2643987A external-priority patent/DE2643987C2/en
Priority claimed from DE2643932A external-priority patent/DE2643932C2/en
Priority claimed from DE19772706205 external-priority patent/DE2706205A1/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2380639A2 publication Critical patent/FR2380639A2/en
Application granted granted Critical
Publication of FR2380639B2 publication Critical patent/FR2380639B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

An N-channel-storage FET has several gates and it may be constructed as a D-MOS-FET. It has a floating storage gate (G1) surrounded on all sides by an insulating material such as SiO2. A control gate (G2) lies immediately above the storage gate, surrounded by insulating material except for a small bare contact area. The substrate of the transistor is of N-type, and the source and drain are of N+ type. The channel region lying between the source and the substrate is of P conduction type.
FR7802924A 1976-09-29 1978-02-02 N-Channel storage FET matrix Granted FR2380639A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2643987A DE2643987C2 (en) 1974-09-20 1976-09-29 n-channel memory FET
DE2643932A DE2643932C2 (en) 1974-09-20 1976-09-29 n-channel memory FET
DE19772706205 DE2706205A1 (en) 1977-02-14 1977-02-14 N-CHANNEL MEMORY FET

Publications (2)

Publication Number Publication Date
FR2380639A2 true FR2380639A2 (en) 1978-09-08
FR2380639B2 FR2380639B2 (en) 1983-01-21

Family

ID=32096460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7802924A Granted FR2380639A2 (en) 1976-09-29 1978-02-02 N-Channel storage FET matrix

Country Status (1)

Country Link
FR (1) FR2380639A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464536A1 (en) * 1979-09-04 1981-03-06 Texas Instruments Inc FLOATING GRID SEMICONDUCTOR MEMORY, ELECTRICALLY PROGRAMMABLE, AND METHOD OF MANUFACTURING THE SAME
EP0205637A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Trapped charge bidirectional power fet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2033346A1 (en) * 1969-02-17 1970-12-04 Hughes Aircraft Co
FR2236247A1 (en) * 1973-07-05 1975-01-31 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2033346A1 (en) * 1969-02-17 1970-12-04 Hughes Aircraft Co
FR2236247A1 (en) * 1973-07-05 1975-01-31 Tokyo Shibaura Electric Co

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *
EXBK/77 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464536A1 (en) * 1979-09-04 1981-03-06 Texas Instruments Inc FLOATING GRID SEMICONDUCTOR MEMORY, ELECTRICALLY PROGRAMMABLE, AND METHOD OF MANUFACTURING THE SAME
EP0205637A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Trapped charge bidirectional power fet

Also Published As

Publication number Publication date
FR2380639B2 (en) 1983-01-21

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