TW366589B - Improved microelectronic field emission device with breakdown inhibiting insulated gate electrode and method for realization - Google Patents
Improved microelectronic field emission device with breakdown inhibiting insulated gate electrode and method for realizationInfo
- Publication number
- TW366589B TW366589B TW084100044A TW84100044A TW366589B TW 366589 B TW366589 B TW 366589B TW 084100044 A TW084100044 A TW 084100044A TW 84100044 A TW84100044 A TW 84100044A TW 366589 B TW366589 B TW 366589B
- Authority
- TW
- Taiwan
- Prior art keywords
- field emission
- emission device
- realization
- gate electrode
- insulated gate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/200,036 US5442193A (en) | 1994-02-22 | 1994-02-22 | Microelectronic field emission device with breakdown inhibiting insulated gate electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366589B true TW366589B (en) | 1999-08-11 |
Family
ID=22740055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084100044A TW366589B (en) | 1994-02-22 | 1995-01-05 | Improved microelectronic field emission device with breakdown inhibiting insulated gate electrode and method for realization |
Country Status (5)
Country | Link |
---|---|
US (1) | US5442193A (zh) |
EP (1) | EP0668603B1 (zh) |
JP (1) | JP3216688B2 (zh) |
DE (1) | DE69506456T2 (zh) |
TW (1) | TW366589B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5731228A (en) * | 1994-03-11 | 1998-03-24 | Fujitsu Limited | Method for making micro electron beam source |
DE69513581T2 (de) * | 1994-08-01 | 2000-09-07 | Motorola, Inc. | Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung |
US5542866A (en) * | 1994-12-27 | 1996-08-06 | Industrial Technology Research Institute | Field emission display provided with repair capability of defects |
US5844370A (en) * | 1996-09-04 | 1998-12-01 | Micron Technology, Inc. | Matrix addressable display with electrostatic discharge protection |
US5719406A (en) * | 1996-10-08 | 1998-02-17 | Motorola, Inc. | Field emission device having a charge bleed-off barrier |
US5760535A (en) * | 1996-10-31 | 1998-06-02 | Motorola, Inc. | Field emission device |
JP3127844B2 (ja) * | 1996-11-22 | 2001-01-29 | 日本電気株式会社 | 電界放出型冷陰極 |
JP3044603B2 (ja) * | 1997-01-08 | 2000-05-22 | 双葉電子工業株式会社 | 電界放出素子の製造方法 |
US5866978A (en) * | 1997-09-30 | 1999-02-02 | Fed Corporation | Matrix getter for residual gas in vacuum sealed panels |
JP3303908B2 (ja) * | 1997-12-03 | 2002-07-22 | 日本電気株式会社 | 微小冷陰極およびその製造方法 |
CN1287679A (zh) * | 1998-02-09 | 2001-03-14 | 先进图像技术公司 | 受限型电子场致发射器件及其制造工艺 |
GB2339961B (en) * | 1998-07-23 | 2001-08-29 | Sony Corp | Processes for the production of cold cathode field emission devices and cold cathode field emission displays |
GB2349271B (en) * | 1998-07-23 | 2001-08-29 | Sony Corp | Cold cathode field emission device and cold cathode field emission display |
US6297587B1 (en) | 1998-07-23 | 2001-10-02 | Sony Corporation | Color cathode field emission device, cold cathode field emission display, and process for the production thereof |
JP2000235832A (ja) * | 1998-07-23 | 2000-08-29 | Sony Corp | 冷陰極電界電子放出素子、冷陰極電界電子放出型表示装置、及びそれらの製造方法 |
JP2003505843A (ja) * | 1999-07-26 | 2003-02-12 | アドバンスド ビジョン テクノロジーズ,インコーポレイテッド | 絶縁ゲート電子電界放出デバイスおよびその製造プロセス |
KR20010075312A (ko) * | 1999-07-26 | 2001-08-09 | 어드밴스드 비젼 테크놀러지스 인코포레이티드 | 진공 전계 효과 소자 및 그 제작 공정 |
US6373174B1 (en) * | 1999-12-10 | 2002-04-16 | Motorola, Inc. | Field emission device having a surface passivation layer |
US6364730B1 (en) * | 2000-01-18 | 2002-04-02 | Motorola, Inc. | Method for fabricating a field emission device and method for the operation thereof |
KR100413815B1 (ko) * | 2002-01-22 | 2004-01-03 | 삼성에스디아이 주식회사 | 삼극구조를 가지는 탄소나노튜브 전계방출소자 및 그제조방법 |
KR100523840B1 (ko) | 2003-08-27 | 2005-10-27 | 한국전자통신연구원 | 전계 방출 소자 |
JP4886184B2 (ja) * | 2004-10-26 | 2012-02-29 | キヤノン株式会社 | 画像表示装置 |
US7556550B2 (en) * | 2005-11-30 | 2009-07-07 | Motorola, Inc. | Method for preventing electron emission from defects in a field emission device |
KR20060088865A (ko) | 2006-07-13 | 2006-08-07 | 정효수 | 광방출 소자, 그 제조방법 및 광방출 소자를 이용한 노광장치 |
CN104078294B (zh) * | 2013-03-26 | 2018-02-27 | 上海联影医疗科技有限公司 | 一种场发射阴极电子源 |
RU2629013C2 (ru) * | 2015-07-06 | 2017-08-24 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) | Автоэмиссионный сверхвысокочастотный диод и способ его изготовления |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2012192A1 (de) * | 1970-03-14 | 1971-10-07 | Philips Nv | Elektrische Entladungsrohre mit einer Kathode bestehend aus einer zwischen zwei leitenden Schichten hegenden Isolierschicht, und Verfahren zur Herstellung einer fur eine derartige Entladungsrohre bestimmte Kathode |
US4987377A (en) * | 1988-03-22 | 1991-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array integrated distributed amplifiers |
JP3044382B2 (ja) * | 1989-03-30 | 2000-05-22 | キヤノン株式会社 | 電子源及びそれを用いた画像表示装置 |
US5055077A (en) * | 1989-11-22 | 1991-10-08 | Motorola, Inc. | Cold cathode field emission device having an electrode in an encapsulating layer |
US5038070A (en) * | 1989-12-26 | 1991-08-06 | Hughes Aircraft Company | Field emitter structure and fabrication process |
US5079476A (en) * | 1990-02-09 | 1992-01-07 | Motorola, Inc. | Encapsulated field emission device |
FR2663462B1 (fr) * | 1990-06-13 | 1992-09-11 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes. |
US5030895A (en) * | 1990-08-30 | 1991-07-09 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array comparator |
-
1994
- 1994-02-22 US US08/200,036 patent/US5442193A/en not_active Expired - Fee Related
-
1995
- 1995-01-05 TW TW084100044A patent/TW366589B/zh active
- 1995-02-16 DE DE69506456T patent/DE69506456T2/de not_active Expired - Fee Related
- 1995-02-16 EP EP95102137A patent/EP0668603B1/en not_active Expired - Lifetime
- 1995-02-17 JP JP5198095A patent/JP3216688B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0668603B1 (en) | 1998-12-09 |
US5442193A (en) | 1995-08-15 |
DE69506456D1 (de) | 1999-01-21 |
DE69506456T2 (de) | 1999-07-22 |
JP3216688B2 (ja) | 2001-10-09 |
JPH07240143A (ja) | 1995-09-12 |
EP0668603A1 (en) | 1995-08-23 |
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