TW365701B - Integrated circuits having fusible metallic fuse links and manufacturing process of the same - Google Patents

Integrated circuits having fusible metallic fuse links and manufacturing process of the same

Info

Publication number
TW365701B
TW365701B TW086116826A TW86116826A TW365701B TW 365701 B TW365701 B TW 365701B TW 086116826 A TW086116826 A TW 086116826A TW 86116826 A TW86116826 A TW 86116826A TW 365701 B TW365701 B TW 365701B
Authority
TW
Taiwan
Prior art keywords
laser beam
same
manufacturing process
integrated circuits
wiring layers
Prior art date
Application number
TW086116826A
Other languages
English (en)
Inventor
Yong Park
Soo-Cheol Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW365701B publication Critical patent/TW365701B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
TW086116826A 1997-06-23 1997-11-11 Integrated circuits having fusible metallic fuse links and manufacturing process of the same TW365701B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970026418A KR100228533B1 (ko) 1997-06-23 1997-06-23 반도체 집적회로의 용단가능한 퓨즈 및 그 제조방법

Publications (1)

Publication Number Publication Date
TW365701B true TW365701B (en) 1999-08-01

Family

ID=19510624

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116826A TW365701B (en) 1997-06-23 1997-11-11 Integrated circuits having fusible metallic fuse links and manufacturing process of the same

Country Status (5)

Country Link
US (1) US5936296A (zh)
EP (1) EP0887859A3 (zh)
JP (1) JPH1117011A (zh)
KR (1) KR100228533B1 (zh)
TW (1) TW365701B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808663B (zh) * 2021-06-17 2023-07-11 台灣積體電路製造股份有限公司 半導體結構及其形成方法

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
EP0853341A2 (en) * 1997-01-14 1998-07-15 Nec Corporation Semiconductor device and method of manufacturing the same
KR100319879B1 (ko) * 1998-05-28 2002-08-24 삼성전자 주식회사 백금족금속막식각방법을이용한커패시터의하부전극형성방법
US6222244B1 (en) * 1998-06-08 2001-04-24 International Business Machines Corporation Electrically blowable fuse with reduced cross-sectional area
US6413848B1 (en) 1998-07-17 2002-07-02 Lsi Logic Corporation Self-aligned fuse structure and method with dual-thickness dielectric
US6259146B1 (en) 1998-07-17 2001-07-10 Lsi Logic Corporation Self-aligned fuse structure and method with heat sink
US6518140B2 (en) * 1998-11-07 2003-02-11 Samsung Electronics Co., Ltd. Manufacturing methods for defect removable semiconductor devices
KR100294346B1 (ko) * 1998-11-07 2001-07-12 허인구 제거가능한 토목용 앵커
TW399264B (en) * 1998-11-27 2000-07-21 United Microelectronics Corp Method for reducing the fluorine content on metal pad surface
US6300590B1 (en) * 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
US6429132B1 (en) * 1998-12-23 2002-08-06 Aurora Systems, Inc. Combination CMP-etch method for forming a thin planar layer over the surface of a device
US20070190751A1 (en) * 1999-03-29 2007-08-16 Marr Kenneth W Semiconductor fuses and methods for fabricating and programming the same
US6562674B1 (en) 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same
US6650519B1 (en) 1999-08-17 2003-11-18 Seagate Technology Llc ESD protection by a high-to-low resistance shunt
KR100340906B1 (ko) * 1999-08-23 2002-06-20 박종섭 반도체 장치의 퓨즈 구조
US6323111B1 (en) 1999-10-28 2001-11-27 Agere Systems Guardian Corp Preweakened on chip metal fuse using dielectric trenches for barrier layer isolation
KR100314133B1 (ko) * 1999-11-26 2001-11-15 윤종용 가장자리에 흡습방지막이 형성된 반도체 칩 및 이흡습방지막의 형성방법
JP3907911B2 (ja) 2000-03-30 2007-04-18 Ｎｅｃエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2002190582A (ja) * 2000-12-21 2002-07-05 Mitsubishi Electric Corp 半導体メモリ及びその製造方法
US20070173075A1 (en) * 2001-03-29 2007-07-26 Joohan Lee Laser-based method and system for processing a multi-material device having conductive link structures
US6777645B2 (en) 2001-03-29 2004-08-17 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
JP2003017570A (ja) * 2001-07-02 2003-01-17 Fujitsu Ltd 半導体装置及びその製造方法
US6707129B2 (en) * 2001-12-18 2004-03-16 United Microelectronics Corp. Fuse structure integrated wire bonding on the low k interconnect and method for making the same
US6579795B1 (en) * 2002-04-02 2003-06-17 Intel Corporation Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
KR100831973B1 (ko) * 2002-04-27 2008-05-26 주식회사 하이닉스반도체 퓨즈의 전기화학적 소실 방지를 위한 반도체 장치
KR100819667B1 (ko) * 2002-07-18 2008-04-04 주식회사 하이닉스반도체 반도체 소자의 퓨즈 형성 방법
US20040038458A1 (en) * 2002-08-23 2004-02-26 Marr Kenneth W. Semiconductor fuses, semiconductor devices containing the same, and methods of making and using the same
US6753210B2 (en) * 2002-09-17 2004-06-22 Taiwan Semiconductor Manufacturing Company Metal fuse for semiconductor devices
DE102005014929B4 (de) * 2005-04-01 2008-04-17 Newlogic Technologies Gmbh Integrierte Spule und integrierter Transformator
US20070029576A1 (en) * 2005-08-03 2007-02-08 International Business Machines Corporation Programmable semiconductor device containing a vertically notched fusible link region and methods of making and using same
US20100213569A1 (en) * 2009-02-20 2010-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits having fuses and systems thereof
US9892221B2 (en) 2009-02-20 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of generating a layout including a fuse layout pattern
KR101095770B1 (ko) * 2009-03-09 2011-12-21 주식회사 하이닉스반도체 반도체 소자 및 그 형성 방법
US9087841B2 (en) * 2013-10-29 2015-07-21 International Business Machines Corporation Self-correcting power grid for semiconductor structures method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214239A (ja) * 1983-05-16 1984-12-04 Fujitsu Ltd 半導体装置の製造方法
KR890001847B1 (ko) * 1986-05-07 1989-05-25 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
US4935801A (en) * 1987-01-27 1990-06-19 Inmos Corporation Metallic fuse with optically absorptive layer
US4849363A (en) * 1988-03-18 1989-07-18 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
US5070392A (en) * 1988-03-18 1991-12-03 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
US5025300A (en) * 1989-06-30 1991-06-18 At&T Bell Laboratories Integrated circuits having improved fusible links
US5185291A (en) * 1989-06-30 1993-02-09 At&T Bell Laboratories Method of making severable conductive path in an integrated-circuit device
US5241212A (en) * 1990-05-01 1993-08-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit portion and a manufacturing method of the same
US5244836A (en) * 1991-12-30 1993-09-14 North American Philips Corporation Method of manufacturing fusible links in semiconductor devices
US5672905A (en) * 1992-08-26 1997-09-30 At&T Global Information Solutions Company Semiconductor fuse and method
US5374590A (en) * 1993-04-28 1994-12-20 International Business Machines Corporation Fabrication and laser deletion of microfuses
US5813881A (en) * 1994-02-08 1998-09-29 Prolinx Labs Corporation Programmable cable and cable adapter using fuses and antifuses
US5578517A (en) * 1994-10-24 1996-11-26 Taiwan Semiconductor Manufacturing Company Ltd. Method of forming a highly transparent silicon rich nitride protective layer for a fuse window

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808663B (zh) * 2021-06-17 2023-07-11 台灣積體電路製造股份有限公司 半導體結構及其形成方法
US11908708B2 (en) 2021-06-17 2024-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Laser de-bonding carriers and composite carriers thereof

Also Published As

Publication number Publication date
EP0887859A3 (en) 2004-06-23
KR100228533B1 (ko) 1999-11-01
EP0887859A2 (en) 1998-12-30
KR19990002715A (ko) 1999-01-15
JPH1117011A (ja) 1999-01-22
US5936296A (en) 1999-08-10

Similar Documents

Publication Publication Date Title
TW365701B (en) Integrated circuits having fusible metallic fuse links and manufacturing process of the same
US4535219A (en) Interfacial blister bonding for microinterconnections
US6295721B1 (en) Metal fuse in copper dual damascene
TW252222B (en) Protection film for the fuse window passivation of integrated circuit
KR970003865A (ko) 집적 회로 장치에서 효율적인 레이저로 소거되는 퓨즈 엘리먼트
MY139553A (en) Method of manufacturing multilayered circuit board
MY125537A (en) Multi-layer printed circuit board and method of manufacturing multi-layer printed circuit board.
EP0090565A2 (en) Process for selectively cutting an electrical conductive layer by irradiation with an energy beam
US6872648B2 (en) Reduced splattering of unpassivated laser fuses
WO1995027313A1 (en) Method of manufacturing an antifuse with silicon spacers and resulting antifuse
MY127042A (en) High laser absorption copper fuse and method for making the same
US6541868B2 (en) Interconnecting conductive links
EP0333509A3 (en) Integrated circuit having laser-alterable metallization layer
TW377494B (en) Semiconductor integrated circuit and the manufacturing method for adjacent regions with different interconnecting layers
CN100517686C (zh) 半导体设备
US20030038338A1 (en) Semiconductor device incorporating a fuse
JPH04150033A (ja) 電子回路基板のバンプ並びに電子回路基板のバンプ及び回路パターンの形成方法
KR20170091532A (ko) 반도체 장치
JPH0529464A (ja) 半導体装置
Zhang et al. Laser-formed vertical metallic link and potential implementation in digital logic integration
JPH0215654A (ja) カスタマ化半導体デバイス
JPS5858742A (ja) 半導体装置
JPH06244285A (ja) 半導体装置
TW274152B (en) Laser repair technology
JPS6288338A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees