TW365017B - Semiconductor apparatus - Google Patents

Semiconductor apparatus

Info

Publication number
TW365017B
TW365017B TW086117984A TW86117984A TW365017B TW 365017 B TW365017 B TW 365017B TW 086117984 A TW086117984 A TW 086117984A TW 86117984 A TW86117984 A TW 86117984A TW 365017 B TW365017 B TW 365017B
Authority
TW
Taiwan
Prior art keywords
well area
area
inductive
semiconductor substrate
semiconductor apparatus
Prior art date
Application number
TW086117984A
Other languages
English (en)
Inventor
Hiroshi Iwata
Seizou Kakimoto
Masayuki Nakano
Toshimasa Matsuoka
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW365017B publication Critical patent/TW365017B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW086117984A 1996-12-04 1997-11-29 Semiconductor apparatus TW365017B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8324465A JPH10163342A (ja) 1996-12-04 1996-12-04 半導体装置

Publications (1)

Publication Number Publication Date
TW365017B true TW365017B (en) 1999-07-21

Family

ID=18166125

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117984A TW365017B (en) 1996-12-04 1997-11-29 Semiconductor apparatus

Country Status (7)

Country Link
US (1) US6288429B1 (zh)
EP (1) EP0951071B1 (zh)
JP (1) JPH10163342A (zh)
KR (1) KR100294039B1 (zh)
DE (1) DE69739242D1 (zh)
TW (1) TW365017B (zh)
WO (1) WO1998025307A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979846B2 (en) 2002-05-13 2005-12-27 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4837154B2 (ja) 1997-05-30 2011-12-14 シャープ株式会社 半導体装置およびその駆動方法
US6172405B1 (en) 1998-07-17 2001-01-09 Sharp Kabushiki Kaisha Semiconductor device and production process therefore
WO2002019396A1 (en) 2000-08-29 2002-03-07 Boise State University Damascene double gated transistors and related manufacturing methods
JP3950294B2 (ja) * 2000-11-16 2007-07-25 シャープ株式会社 半導体装置
JP2002237575A (ja) * 2001-02-08 2002-08-23 Sharp Corp 半導体装置及びその製造方法
CN1255878C (zh) 2001-04-12 2006-05-10 松下电器产业株式会社 半导体装置及其制造方法
JP4791686B2 (ja) * 2003-06-05 2011-10-12 シャープ株式会社 動的閾値動作トランジスタ
JP4533099B2 (ja) * 2004-11-17 2010-08-25 ルネサスエレクトロニクス株式会社 半導体装置
US8421121B2 (en) * 2007-04-18 2013-04-16 Northrop Grumman Systems Corporation Antimonide-based compound semiconductor with titanium tungsten stack
KR101230680B1 (ko) * 2009-04-30 2013-02-07 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
WO2011062788A1 (en) * 2009-11-17 2011-05-26 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8377783B2 (en) 2010-09-30 2013-02-19 Suvolta, Inc. Method for reducing punch-through in a transistor device
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8400219B2 (en) 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
JP5742631B2 (ja) * 2011-09-28 2015-07-01 富士通セミコンダクター株式会社 半導体装置の製造方法
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
JP2014013792A (ja) * 2012-07-03 2014-01-23 Fujitsu Semiconductor Ltd 半導体装置およびその製造方法
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
US9431068B2 (en) 2012-10-31 2016-08-30 Mie Fujitsu Semiconductor Limited Dynamic random access memory (DRAM) with low variation transistor peripheral circuits
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US8994415B1 (en) 2013-03-01 2015-03-31 Suvolta, Inc. Multiple VDD clock buffer
US8988153B1 (en) 2013-03-09 2015-03-24 Suvolta, Inc. Ring oscillator with NMOS or PMOS variation insensitivity
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9449967B1 (en) 2013-03-15 2016-09-20 Fujitsu Semiconductor Limited Transistor array structure
US9112495B1 (en) 2013-03-15 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit device body bias circuits and methods
JP6123462B2 (ja) * 2013-04-30 2017-05-10 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US8976575B1 (en) 2013-08-29 2015-03-10 Suvolta, Inc. SRAM performance monitor
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
KR101692625B1 (ko) 2015-06-18 2017-01-03 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666752B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666753B1 (ko) * 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264857A (en) 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4605377A (en) * 1984-06-21 1986-08-12 Outboard Marine Corporation Manual lift means for marine propulsion device
JP2658027B2 (ja) * 1986-11-21 1997-09-30 セイコーエプソン株式会社 半導体装置の製造方法
JP2864863B2 (ja) * 1992-04-23 1999-03-08 日本電気株式会社 半導体集積回路装置およびその製造方法
JPH0653422A (ja) * 1992-07-28 1994-02-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
JP3381281B2 (ja) * 1992-10-31 2003-02-24 ソニー株式会社 半導体装置
JPH07335837A (ja) * 1994-06-03 1995-12-22 Hitachi Ltd 半導体装置および論理回路
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
EP0751573A1 (en) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Integrated power circuit and corresponding manufacturing process
US5985709A (en) * 1996-04-16 1999-11-16 United Microelectronics Corp. Process for fabricating a triple-well structure for semiconductor integrated circuit devices
US5914547A (en) * 1997-11-21 1999-06-22 Magnetek, Inc. Auxiliary bearing assembly for reduction of unwanted shaft voltages in an electric motor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979846B2 (en) 2002-05-13 2005-12-27 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US7208353B2 (en) 2002-05-13 2007-04-24 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US7537978B2 (en) 2002-05-13 2009-05-26 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP0951071A4 (en) 2001-03-14
EP0951071B1 (en) 2009-02-04
US6288429B1 (en) 2001-09-11
KR100294039B1 (ko) 2001-06-15
EP0951071A1 (en) 1999-10-20
WO1998025307A1 (en) 1998-06-11
JPH10163342A (ja) 1998-06-19
KR20000057396A (ko) 2000-09-15
DE69739242D1 (de) 2009-03-19

Similar Documents

Publication Publication Date Title
TW365017B (en) Semiconductor apparatus
EP1094525A3 (en) Field-effect semiconductor device having a trench gate electrode and method of making the same
MY111990A (en) Mos transistor and method for making the same
TW363276B (en) Thin-film semiconductor device, thin-film transistor and method for fabricating the same
TW369729B (en) A method for forming a MOSFET using a disposable gate
WO2005060464A3 (en) Method and apparatus for forming an soi body-contacted transistor
EP1521298A3 (en) Method of making a high-voltage field-effect transistor
EP0820096A3 (en) Semiconductor device and method for fabricating the same
EP1367659A3 (en) Organic field effect transistor
TW283263B (en) Fabrication method of semiconductor device and field effect transistor
TW346680B (en) Semiconductor device and process for producing the same
TW335513B (en) Semiconductor component for high voltage
TW356584B (en) Ferroelectric transistors of thin film semiconductor gate electrodes
WO1997038447A3 (en) High-voltage lateral mosfet soi device having a semiconductor linkup region
EP0217406A3 (en) Thin-film transistor and method of fabricating the same
TW333676B (en) The thin-film transistor & its producing method and liquid crystal display device
WO2003038906A3 (en) Lateral soi field-effect transistor and method of making the same
MY102019A (en) A semiconductor memory device.
EP0294881A3 (en) A semiconductor device and a circuit suitable for use in an intelligent power switch
WO2000028601A3 (en) Lateral thin-film silicon-on-insulator (soi) device having lateral depletion
EP1524702A3 (en) Thin film transistor with body contact region
TW357439B (en) Circuit structure having at least one MOS transistor and method for its production
EP0848425A3 (en) Semiconductor device including protection means
WO2005045938A3 (en) Insulated gate field-effect transistor
EP1523050A3 (en) Organic thin film transistor enhanced in charge carrier mobility by virtue of surface relief structure

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees