TW364175B - A method for fabricating semiconductor component - Google Patents

A method for fabricating semiconductor component

Info

Publication number
TW364175B
TW364175B TW086104118A TW86104118A TW364175B TW 364175 B TW364175 B TW 364175B TW 086104118 A TW086104118 A TW 086104118A TW 86104118 A TW86104118 A TW 86104118A TW 364175 B TW364175 B TW 364175B
Authority
TW
Taiwan
Prior art keywords
layer
hsg
polysilicon layer
lower electrode
capacitor
Prior art date
Application number
TW086104118A
Other languages
English (en)
Inventor
Tsuei-Rung You
Water Lur
Shr-Wei Suen
Chang-Shian Gau
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086104118A priority Critical patent/TW364175B/zh
Application granted granted Critical
Publication of TW364175B publication Critical patent/TW364175B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
TW086104118A 1997-03-31 1997-03-31 A method for fabricating semiconductor component TW364175B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086104118A TW364175B (en) 1997-03-31 1997-03-31 A method for fabricating semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086104118A TW364175B (en) 1997-03-31 1997-03-31 A method for fabricating semiconductor component

Publications (1)

Publication Number Publication Date
TW364175B true TW364175B (en) 1999-07-11

Family

ID=57940947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104118A TW364175B (en) 1997-03-31 1997-03-31 A method for fabricating semiconductor component

Country Status (1)

Country Link
TW (1) TW364175B (zh)

Similar Documents

Publication Publication Date Title
JPS6010773A (ja) １素子型ｆｅｔ−記憶キヤパシタ回路の形成方法
KR910010751A (ko) Dram 셀용 커패시터
EP0487739A4 (en) Method of manufacturing semiconductor device
KR930006941A (ko) 홀 캐패시터 셀 및 그 제조방법
TW363216B (en) Manufacturing method of capacitor used for DRAM
TW364175B (en) A method for fabricating semiconductor component
CN1214542A (zh) 集成电路制造方法及结构
EP0875925A3 (en) Method of manufacturing capacitors in integrated circuits
KR970063741A (ko) 반도체 메모리 디바이스 및 이의 제조 방법
JPH02129956A (ja) 半導体メモリ素子の製造方法
CN85103830A (zh) 高密度动态随机存取存储器(ram)的槽式电容器的制造方法
KR100679251B1 (ko) 반도체 소자의 커패시터 제조방법
KR100365765B1 (ko) 반도체소자의전하저장전극형성방법
KR920001733B1 (ko) 고집적 dram셀의 제조방법
TW531842B (en) Fabrication method of capacitor having Ta2O3 dielectric layer
TW355842B (en) Manufacturing method for crown-shaped capacitance structure
TW200507182A (en) Memory device with vertical transistors and deep trench capacitors and method of fabricating the same
KR980006377A (ko) 반도체소자의 캐패시터 제조방법
TW226482B (en) High-capacitance stacked capacitor of dram cell
JPH09260610A (ja) 半導体装置の製造方法
TW278239B (en) Fabrication method of stack DRAM with rugged surface
JPH0555505A (ja) 半導体メモリセルとその形成方法
TW275148B (en) Manufacturing method for a DRAM cell with a cradle-type capacitor
TW288163B (en) Method of forming dynamic random access memory with multi-pillar-shaped capacitor
JPH02194647A (ja) スタック型半導体メモリ装置およびその製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent