TW362275B - Semiconductor device and method for producing the same - Google Patents
Semiconductor device and method for producing the sameInfo
- Publication number
- TW362275B TW362275B TW86112697A TW86112697A TW362275B TW 362275 B TW362275 B TW 362275B TW 86112697 A TW86112697 A TW 86112697A TW 86112697 A TW86112697 A TW 86112697A TW 362275 B TW362275 B TW 362275B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- conductivity type
- well
- same
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23485996 | 1996-09-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW362275B true TW362275B (en) | 1999-06-21 |
Family
ID=16977474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW86112697A TW362275B (en) | 1996-09-05 | 1997-09-03 | Semiconductor device and method for producing the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US6066522A (zh) |
EP (1) | EP0831518B1 (zh) |
JP (1) | JP3031880B2 (zh) |
KR (1) | KR100286969B1 (zh) |
CN (1) | CN1087499C (zh) |
DE (1) | DE69735323T2 (zh) |
TW (1) | TW362275B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100260559B1 (ko) * | 1997-12-29 | 2000-07-01 | 윤종용 | 비휘발성 메모리 장치의 웰 구조 및 그 제조 방법 |
KR100282706B1 (ko) * | 1998-07-07 | 2001-03-02 | 윤종용 | 반도체 장치의 제조 방법 |
JP3733252B2 (ja) * | 1998-11-02 | 2006-01-11 | セイコーエプソン株式会社 | 半導体記憶装置及びその製造方法 |
JP4517410B2 (ja) * | 1998-11-25 | 2010-08-04 | エルピーダメモリ株式会社 | 半導体装置 |
US6144076A (en) * | 1998-12-08 | 2000-11-07 | Lsi Logic Corporation | Well formation For CMOS devices integrated circuit structures |
JP3348782B2 (ja) | 1999-07-22 | 2002-11-20 | 日本電気株式会社 | 半導体装置の製造方法 |
US20040053439A1 (en) * | 2002-09-17 | 2004-03-18 | Infineon Technologies North America Corp. | Method for producing low-resistance ohmic contacts between substrates and wells in CMOS integrated circuits |
US7442996B2 (en) | 2006-01-20 | 2008-10-28 | International Business Machines Corporation | Structure and method for enhanced triple well latchup robustness |
WO2014115642A1 (ja) * | 2013-01-28 | 2014-07-31 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法 |
KR101450436B1 (ko) * | 2013-03-04 | 2014-10-13 | 주식회사 동부하이텍 | 반도체 소자의 웰 형성 방법 |
JP2014207361A (ja) * | 2013-04-15 | 2014-10-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP6255915B2 (ja) * | 2013-11-07 | 2018-01-10 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
CN105336691B (zh) * | 2014-07-31 | 2018-06-15 | 无锡华润上华科技有限公司 | 阱区制备方法 |
WO2016138924A1 (en) | 2015-03-02 | 2016-09-09 | Arcelik Anonim Sirketi | A laundry machine with an improved fluid distribution load balance system |
US9831134B1 (en) * | 2016-09-28 | 2017-11-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device having deep wells |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0671067B2 (ja) * | 1985-11-20 | 1994-09-07 | 株式会社日立製作所 | 半導体装置 |
US5354699A (en) * | 1987-05-13 | 1994-10-11 | Hitachi, Ltd. | Method of manufacturing semiconductor integrated circuit device |
JPH01161752A (ja) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | 半導体装置製造方法 |
US5116777A (en) * | 1990-04-30 | 1992-05-26 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation |
JP2965783B2 (ja) * | 1991-07-17 | 1999-10-18 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH05198666A (ja) * | 1991-11-20 | 1993-08-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5475335A (en) * | 1994-04-01 | 1995-12-12 | National Semiconductor Corporation | High voltage cascaded charge pump |
KR0131723B1 (ko) * | 1994-06-08 | 1998-04-14 | 김주용 | 반도체소자 및 그 제조방법 |
US5501993A (en) * | 1994-11-22 | 1996-03-26 | Genus, Inc. | Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation |
JP2776350B2 (ja) * | 1995-12-18 | 1998-07-16 | 日本電気株式会社 | 半導体集積回路装置の製造方法 |
-
1997
- 1997-09-03 EP EP97115246A patent/EP0831518B1/en not_active Expired - Lifetime
- 1997-09-03 TW TW86112697A patent/TW362275B/zh not_active IP Right Cessation
- 1997-09-03 DE DE69735323T patent/DE69735323T2/de not_active Expired - Lifetime
- 1997-09-04 JP JP9240078A patent/JP3031880B2/ja not_active Expired - Lifetime
- 1997-09-04 US US08/923,134 patent/US6066522A/en not_active Expired - Lifetime
- 1997-09-05 CN CN97116265A patent/CN1087499C/zh not_active Expired - Lifetime
- 1997-09-06 KR KR1019970045999A patent/KR100286969B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100286969B1 (ko) | 2001-04-16 |
JPH10135351A (ja) | 1998-05-22 |
EP0831518B1 (en) | 2006-03-01 |
CN1175796A (zh) | 1998-03-11 |
US6066522A (en) | 2000-05-23 |
CN1087499C (zh) | 2002-07-10 |
DE69735323T2 (de) | 2006-11-02 |
JP3031880B2 (ja) | 2000-04-10 |
DE69735323D1 (de) | 2006-04-27 |
KR19980024386A (ko) | 1998-07-06 |
EP0831518A1 (en) | 1998-03-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |