TW359895B - Improvement of frequency characteristic of semiconductor device in ultra-high frequency band - Google Patents

Improvement of frequency characteristic of semiconductor device in ultra-high frequency band

Info

Publication number
TW359895B
TW359895B TW084103387A TW84103387A TW359895B TW 359895 B TW359895 B TW 359895B TW 084103387 A TW084103387 A TW 084103387A TW 84103387 A TW84103387 A TW 84103387A TW 359895 B TW359895 B TW 359895B
Authority
TW
Taiwan
Prior art keywords
frequency band
chip capacitors
frequency
practice
fet
Prior art date
Application number
TW084103387A
Other languages
English (en)
Inventor
Akira Kumagai
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Application granted granted Critical
Publication of TW359895B publication Critical patent/TW359895B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
    • H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
    • H01P5/028—Transitions between lines of the same kind and shape, but with different dimensions between strip lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

Landscapes

  • Microwave Amplifiers (AREA)
TW084103387A 1994-04-28 1995-04-08 Improvement of frequency characteristic of semiconductor device in ultra-high frequency band TW359895B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6090883A JPH07297609A (ja) 1994-04-28 1994-04-28 半導体装置

Publications (1)

Publication Number Publication Date
TW359895B true TW359895B (en) 1999-06-01

Family

ID=14010845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103387A TW359895B (en) 1994-04-28 1995-04-08 Improvement of frequency characteristic of semiconductor device in ultra-high frequency band

Country Status (5)

Country Link
US (1) US5576661A (zh)
EP (1) EP0680141B1 (zh)
JP (1) JPH07297609A (zh)
DE (1) DE69514142T2 (zh)
TW (1) TW359895B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973567A (en) * 1997-06-16 1999-10-26 Hughes Electronics Corporation Tunable impedance matching network for a mic power amplifier module
FR2794308A1 (fr) * 1999-05-28 2000-12-01 Thomson Csf Circuit d'adaptation d'impedance pour amplificateur
JP2001111364A (ja) * 1999-10-12 2001-04-20 Nec Corp マイクロ波増幅器
US6466094B2 (en) * 2001-01-10 2002-10-15 Ericsson Inc. Gain and bandwidth enhancement for RF power amplifier package
GB0204133D0 (en) * 2002-02-22 2002-04-10 Quest Int Improvements in or relating to hair care compositions
JP2004228989A (ja) * 2003-01-23 2004-08-12 Renesas Technology Corp 半導体装置
US7786603B2 (en) * 2005-10-28 2010-08-31 Freescale Semiconductor, Inc. Electronic assembly having graded wire bonding
JP2007295329A (ja) * 2006-04-26 2007-11-08 Nec Corp 増幅器
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
JP5239905B2 (ja) * 2009-01-28 2013-07-17 富士通株式会社 高周波増幅器
JP5589428B2 (ja) * 2010-02-19 2014-09-17 富士通株式会社 伝送線路、インピーダンス変換器、集積回路搭載装置および通信機モジュール
JP5269864B2 (ja) * 2010-12-07 2013-08-21 株式会社東芝 半導体装置
JP2012156362A (ja) 2011-01-27 2012-08-16 Fujitsu Ltd 伝送線路、集積回路搭載装置および通信機モジュール
GB201105912D0 (en) 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
JP2016174068A (ja) * 2015-03-17 2016-09-29 株式会社東芝 並列キャパシタおよび高周波半導体装置
KR20190138829A (ko) * 2017-05-17 2019-12-16 미쓰비시덴키 가부시키가이샤 증폭기

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102292A (en) * 1979-01-29 1980-08-05 Nippon Electric Co High frequency high output transistor amplifier
JPS58140140A (ja) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd 半導体装置
JPS62292007A (ja) * 1986-06-11 1987-12-18 Nec Corp 高周波増幅器
JPH02266701A (ja) * 1989-04-07 1990-10-31 Mitsubishi Electric Corp 整合回路パターン
DE69022332T2 (de) * 1989-08-04 1996-05-02 Matsushita Electric Ind Co Ltd Anpassungsnetzwerk für Hochfrequenz-Transistor.
US5132641A (en) * 1991-05-01 1992-07-21 Fujitsu Limited Apparatus and method for dividing/combining microwave power from an odd number of transistor chips
JPH05218102A (ja) * 1992-01-13 1993-08-27 Nec Corp 内部整合回路を有する電界効果トランジスタ

Also Published As

Publication number Publication date
EP0680141B1 (en) 1999-12-29
JPH07297609A (ja) 1995-11-10
US5576661A (en) 1996-11-19
EP0680141A1 (en) 1995-11-02
DE69514142T2 (de) 2000-06-29
DE69514142D1 (de) 2000-02-03

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