SE9803485L - Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar - Google Patents

Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar

Info

Publication number
SE9803485L
SE9803485L SE9803485A SE9803485A SE9803485L SE 9803485 L SE9803485 L SE 9803485L SE 9803485 A SE9803485 A SE 9803485A SE 9803485 A SE9803485 A SE 9803485A SE 9803485 L SE9803485 L SE 9803485L
Authority
SE
Sweden
Prior art keywords
source
radio frequency
transistors
sic field
bonding wires
Prior art date
Application number
SE9803485A
Other languages
English (en)
Other versions
SE9803485D0 (sv
SE520119C2 (sv
Inventor
Andrej Litwin
Ted Johansson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9803485A priority Critical patent/SE520119C2/sv
Publication of SE9803485D0 publication Critical patent/SE9803485D0/sv
Priority to TW87117780A priority patent/TW418513B/zh
Priority to CA002345786A priority patent/CA2345786A1/en
Priority to PCT/SE1999/001670 priority patent/WO2000022666A2/en
Priority to JP2000576486A priority patent/JP2002527905A/ja
Priority to CNB998121444A priority patent/CN1156909C/zh
Priority to KR1020017004039A priority patent/KR20010088823A/ko
Priority to EP99956401A priority patent/EP1147554A2/en
Priority to AU13022/00A priority patent/AU1302200A/en
Priority to US09/414,970 priority patent/US6365918B1/en
Publication of SE9803485L publication Critical patent/SE9803485L/sv
Priority to HK03100122.8A priority patent/HK1048017A1/zh
Publication of SE520119C2 publication Critical patent/SE520119C2/sv

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
SE9803485A 1998-10-13 1998-10-13 Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar SE520119C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9803485A SE520119C2 (sv) 1998-10-13 1998-10-13 Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
TW87117780A TW418513B (en) 1998-10-13 1998-10-27 Method and device for interconnect radio frequency power SiC field effect transistors
AU13022/00A AU1302200A (en) 1998-10-13 1999-09-23 Method and device for interconnect radio frequency power sic field effect transistors
JP2000576486A JP2002527905A (ja) 1998-10-13 1999-09-23 無線周波数パワーＳｉＣ電界効果トランジスタの相互接続の方法及び装置
PCT/SE1999/001670 WO2000022666A2 (en) 1998-10-13 1999-09-23 METHOD AND DEVICE FOR INTERCONNECT RADIO FREQUENCY POWER SiC FIELD EFFECT TRANSISTORS
CA002345786A CA2345786A1 (en) 1998-10-13 1999-09-23 Method and device for interconnect radio frequency power sic field effect transistors
CNB998121444A CN1156909C (zh) 1998-10-13 1999-09-23 射频功率碳化硅场效应晶体管的互连方法和器件
KR1020017004039A KR20010088823A (ko) 1998-10-13 1999-09-23 무선 주파수 전력 ＳｉＣ 전계 효과 트랜지스터를상호접속하기 위한 방법 및 장치
EP99956401A EP1147554A2 (en) 1998-10-13 1999-09-23 METHOD AND DEVICE FOR INTERCONNECT RADIO FREQUENCY POWER SiC FIELD EFFECT TRANSISTORS
US09/414,970 US6365918B1 (en) 1998-10-13 1999-10-12 Method and device for interconnected radio frequency power SiC field effect transistors
HK03100122.8A HK1048017A1 (zh) 1998-10-13 2003-01-06 射頻功率碳化硅場效應晶體管的互連方法和器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9803485A SE520119C2 (sv) 1998-10-13 1998-10-13 Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar

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SE9803485D0 SE9803485D0 (sv) 1998-10-13
SE9803485L true SE9803485L (sv) 2000-04-14
SE520119C2 SE520119C2 (sv) 2003-05-27

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SE9803485A SE520119C2 (sv) 1998-10-13 1998-10-13 Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar

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US (1) US6365918B1 (sv)
EP (1) EP1147554A2 (sv)
JP (1) JP2002527905A (sv)
KR (1) KR20010088823A (sv)
CN (1) CN1156909C (sv)
AU (1) AU1302200A (sv)
CA (1) CA2345786A1 (sv)
HK (1) HK1048017A1 (sv)
SE (1) SE520119C2 (sv)
TW (1) TW418513B (sv)
WO (1) WO2000022666A2 (sv)

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GB0128351D0 (en) 2001-11-27 2002-01-16 Koninkl Philips Electronics Nv Multi-chip module semiconductor devices
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process
CN101292349B (zh) * 2005-10-19 2011-09-28 Nxp股份有限公司 包括具有与接线耦接的电极的元件的器件
US7525152B2 (en) * 2006-03-02 2009-04-28 Freescale Semiconductor, Inc. RF power transistor device with metal electromigration design and method thereof
TWI455306B (zh) * 2006-03-02 2014-10-01 Freescale Semiconductor Inc 具有金屬電移設計之射頻功率電晶體裝置及其方法
JP5085552B2 (ja) * 2006-10-02 2012-11-28 株式会社東芝 半導体装置
JP5083229B2 (ja) * 2009-01-21 2012-11-28 三菱電機株式会社 高周波半導体装置
JP2012175070A (ja) * 2011-02-24 2012-09-10 Panasonic Corp 半導体パッケージ
US10340811B2 (en) 2016-11-28 2019-07-02 Ford Global Technologies, Llc Inverter switching devices with gate coils to enhance common source inductance

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US5135890A (en) * 1989-06-16 1992-08-04 General Electric Company Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
JP2567976B2 (ja) * 1990-08-29 1996-12-25 シャープ株式会社 高周波低雑音半導体装置
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
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Also Published As

Publication number Publication date
US6365918B1 (en) 2002-04-02
SE9803485D0 (sv) 1998-10-13
SE520119C2 (sv) 2003-05-27
JP2002527905A (ja) 2002-08-27
WO2000022666A3 (en) 2000-07-20
CN1359535A (zh) 2002-07-17
WO2000022666A2 (en) 2000-04-20
KR20010088823A (ko) 2001-09-28
EP1147554A2 (en) 2001-10-24
CA2345786A1 (en) 2000-04-20
HK1048017A1 (zh) 2003-03-14
AU1302200A (en) 2000-05-01
CN1156909C (zh) 2004-07-07
TW418513B (en) 2001-01-11

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