HK1048017A1 - 射頻功率碳化硅場效應晶體管的互連方法和器件 - Google Patents

射頻功率碳化硅場效應晶體管的互連方法和器件

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Publication number
HK1048017A1
HK1048017A1 HK03100122.8A HK03100122A HK1048017A1 HK 1048017 A1 HK1048017 A1 HK 1048017A1 HK 03100122 A HK03100122 A HK 03100122A HK 1048017 A1 HK1048017 A1 HK 1048017A1
Authority
HK
Hong Kong
Prior art keywords
radio frequency
frequency power
effect transistors
filed effect
power sic
Prior art date
Application number
HK03100122.8A
Other languages
English (en)
Inventor
Litwin Andrej
Johansson Ted
Original Assignee
艾利森電話股份有限公司
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Filing date
Publication date
Application filed by 艾利森電話股份有限公司 filed Critical 艾利森電話股份有限公司
Publication of HK1048017A1 publication Critical patent/HK1048017A1/zh

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)
HK03100122.8A 1998-10-13 2003-01-06 射頻功率碳化硅場效應晶體管的互連方法和器件 HK1048017A1 (zh)

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SE9803485A SE520119C2 (sv) 1998-10-13 1998-10-13 Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
PCT/SE1999/001670 WO2000022666A2 (en) 1998-10-13 1999-09-23 METHOD AND DEVICE FOR INTERCONNECT RADIO FREQUENCY POWER SiC FIELD EFFECT TRANSISTORS

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GB0128351D0 (en) 2001-11-27 2002-01-16 Koninkl Philips Electronics Nv Multi-chip module semiconductor devices
US7002249B2 (en) * 2002-11-12 2006-02-21 Primarion, Inc. Microelectronic component with reduced parasitic inductance and method of fabricating
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process
EP1941546A2 (en) * 2005-10-19 2008-07-09 Nxp B.V. Device comprising an element with electrodes coupled to connections
TWI455306B (zh) * 2006-03-02 2014-10-01 Freescale Semiconductor Inc 具有金屬電移設計之射頻功率電晶體裝置及其方法
US7525152B2 (en) * 2006-03-02 2009-04-28 Freescale Semiconductor, Inc. RF power transistor device with metal electromigration design and method thereof
WO2008041682A1 (fr) * 2006-10-02 2008-04-10 Kabushiki Kaisha Toshiba Dispositif à semi-conducteur
JP5083229B2 (ja) * 2009-01-21 2012-11-28 三菱電機株式会社 高周波半導体装置
JP2012175070A (ja) * 2011-02-24 2012-09-10 Panasonic Corp 半導体パッケージ
US10340811B2 (en) 2016-11-28 2019-07-02 Ford Global Technologies, Llc Inverter switching devices with gate coils to enhance common source inductance

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FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US5135890A (en) * 1989-06-16 1992-08-04 General Electric Company Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip
JP2567976B2 (ja) * 1990-08-29 1996-12-25 シャープ株式会社 高周波低雑音半導体装置
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
US5463242A (en) * 1994-05-03 1995-10-31 General Electric Company Thin film circuits with high density connector
DE69535861D1 (de) * 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
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US5834840A (en) * 1995-05-25 1998-11-10 Massachusetts Institute Of Technology Net-shape ceramic processing for electronic devices and packages
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US5841184A (en) * 1997-09-19 1998-11-24 The Whitaker Corporation Integrated emitter drain bypass capacitor for microwave/RF power device applications

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WO2000022666A3 (en) 2000-07-20
CA2345786A1 (en) 2000-04-20
KR20010088823A (ko) 2001-09-28
SE9803485L (sv) 2000-04-14
US6365918B1 (en) 2002-04-02
JP2002527905A (ja) 2002-08-27
CN1359535A (zh) 2002-07-17
SE520119C2 (sv) 2003-05-27
TW418513B (en) 2001-01-11
EP1147554A2 (en) 2001-10-24
WO2000022666A2 (en) 2000-04-20
SE9803485D0 (sv) 1998-10-13
AU1302200A (en) 2000-05-01
CN1156909C (zh) 2004-07-07

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