CN1156909C - 射频功率碳化硅场效应晶体管的互连方法和器件 - Google Patents

射频功率碳化硅场效应晶体管的互连方法和器件 Download PDF

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CN1156909C
CN1156909C CNB998121444A CN99812144A CN1156909C CN 1156909 C CN1156909 C CN 1156909C CN B998121444 A CNB998121444 A CN B998121444A CN 99812144 A CN99812144 A CN 99812144A CN 1156909 C CN1156909 C CN 1156909C
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bonding
electrode
bonding wire
source
tube core
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CN1359535A (zh
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A
A·利特温
T·约翰松
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Infineon Technologies AG
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Telefonaktiebolaget LM Ericsson AB
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Abstract

本发明涉及到用来互连射频功率SiC场效应晶体管的方法和器件。为了改善寄生源电感，利用了晶体管的小尺寸，其中键合焊点被置于管芯的二个侧面上，使大多数源键合引线(6)垂直于栅和漏键合引线(7，8)走线。多个键合引线可以被连接到源键合焊点，降低了源电感。由于正交引线安排造成源/栅之间和源/漏之间互感降低，故这种安排还带来额外的优点。

Description

射频功率碳化硅场效应晶体管的互连方法和器件
发明的领域
本发明涉及到射频功率碳化硅场效应晶体管的互连方法和器件，此器件包含射频功率碳化硅场效应晶体管的互连设计和具有这种互连设计的射频功率碳化硅场效应晶体管。
发明的背景
碳化硅(SiC)晶体管已经开始替代Si晶体管和GaAs晶体管，用来在GHz频率下产生功率。已经预见到并实验显示了，碳化硅晶体管依赖于优异的材料性质，比之所提到的其它类型晶体管，能够处置高得多的功率，亦即，同样尺寸的晶体管能够产生高几倍的功率。为了充分利用实际晶体管封装件中的SiC管芯的优点，管芯到封装件的连接也应该修正。利用常规MESFET设计，形成图1所示的叉指栅和源键合焊点1、2以及引线3、4，由于较小的管芯使键合引线更少，故SiC晶体管的键合引线3、4引起的寄生电感将大大高于其它材料类型的。特别是寄生的源电感对晶体管特性是有害的。
发明的概述
改善寄生源电感的一种新的方法是利用晶体管的小尺寸并将键合焊点置于管芯的二侧，使大多数源键合引线垂直于栅和漏键合引线。多个键合引线可以被连接到源键合焊点，降低了源电感。由于正交引线安置降低了源/栅之间和源/漏之间的互感，故这种安排还有其它的优点。
在必须将多个晶体管管芯置于同一个封装件中的情况下，跨接芯片可以被置于管芯之间，以便简化键合步骤和进一步降低源电感。
下面参照优选实施方案和附图来进一步描述本发明。
附图的简要说明
图1是MESFET管芯上引线和键合焊点常规放置的设计。
图2是根据本发明的连接到管芯上焊点的源键合引线的设计，其中源键合引线垂直于栅和漏键合引线。
图3是根据本发明的设计，其中跨接芯片被置于管芯之间。
图4是根据本发明为SiC MESFET提出的晶体管设计的例子。
优选实施方案的详细描述
高频功率放大有源器件被广泛地用于通信系统的输出部分中。在通常超过1kW的大功率电平下，采用真空管或其它形式的放大。行波管(TWT)即速调管被用于高达10MW的功率电平。在比较低的功率电平下，固体晶体管被用于几乎所有的射频功率放大。首先在50年代末期用锗制造了高频晶体管，但很快就在60年代初被硅双即晶体管取代，并一直主导着射频功率，见论文H.F.Cooke，“MicrowaveTransistors：Theory and Design”，Proc.IEEE，vol.59，p.1163，Aug.1971。
对于蜂窝无线电通信，硅双极晶体管在基站输出放大器中占有完全的主导，并且能够以良好的稳定性、利用率和价格实现高达至少2GHz的强大性能。这类应用选择的其它技术是GaAs MESFET以及新近开发的横向扩散MOS晶体管(LD-MOS)。由于通信市场的迅速扩大，存在着进一步改进现有技术以及发现新型器件的强大动力。
功率晶体管被特别设计来提供大的输出功率和高的增益。制造工艺、器件参数、布局和封装已经被精心地转向这一目的。这些器件需要满足击穿电压、DC增益或跨导、电容、射频增益、强度、噪声指标、输入/输出阻抗、畸变等大量详细要求。工作频率从几百MHz直到微波范围。比之“常规”的IC型晶体管，大约1W的输出功率是必须特别考虑并可以用作功率器件松散定义的起码水平。通常在单个管芯上仅仅使用一个n沟道器件。输出功率要求高达几百W，有时甚至几kW，借助于在单个管芯上并列许多晶体管单元，并在一个封装件中并列几个管芯，达到了这一高输出功率。这些封装件常常具有大的镀金热沉，以便散去芯片产生的热。
碳化硅晶体管新近已经被广泛地研究作为Si和GaAs晶体管的替代来产生GHz频率的功率。SiC的独特性质是高的介电击穿电场(4×106V/cm)、高的饱和电子漂移速度(2×107cm/s)、和高的热导率(4.9W/cmK)。因此，SiC基器件由于优异的材料性质而已经被预期并实验显示了能够处置比上述晶体管类型高得多的功率密度。为了完全显示其优点，SiC器件必须工作于非常高的电源电压(48V或更高)。此技术仍然处于研究室阶段，而且，在推向市场之前必须解决几个材料和工艺问题。虽然器件更昂贵，但预计总的系统成本会较低。
由于封装件中大管芯的阻抗低，故大多数射频功率晶体管被内部匹配。由小直径(25-50微米)键合引线组成的内部匹配网络以及互连需要的芯片电容器，可参见文献：T.Johansson，“Inside the RFPower Transistor”，Applied Microwave & Wileless，p.34，Sep/Oct 1997。微带结构和波导等不被普遍采用。在大多数情况下，键合引线比波长短，因此能够准确地表示为具有有限串联电阻的电感。用相似于IC制造的技术，在例如硅中制作芯片电容器。
多个平行的键合引线被用于射频功率晶体管中。由于封装件中各个引线之间的相互作用，各个引线的互感对器件性能起很大作用。特别重要的是FET的栅-漏相互作用以及使总电感，特别是对地连接(源)的总电感尽可能小。
SiC器件的匹配和封装相似于硅工艺，但为了完全利用实际晶体管封装件中的SiC管芯的优点，管芯到封装件的连接也应该修正。
为了改善寄生电感和利用晶体管的小尺寸，键合焊点被置于管芯的二个侧面上，使键合引线垂直于栅和漏键合引线行进。多个键合引线可以被连接到源键合焊点，减小了源电感，其中由于正交引线安置降低了源/栅之间和源/漏之间的互感，故这种安排还有其它的优点。
图2示出了根据本发明在管芯5上的优选引线设计，其中源键合引线6被置于管芯的相对侧并垂直于栅和漏键合引线7和8。源键合焊点9被置于管芯5的边沿，且源键合引线6垂直于栅和漏键合引线7和8。虚线示出了根据图4的管芯上的晶体管的实际位置。
如图3所示，在多个晶体管管芯必须置于同一个封装件中的情况下，跨接芯片10可以被置于管芯11与12之间，以便简化键合步骤并进一步降低源电感。这种安排方法甚至能够被应用于单个管芯的情况。
在图4中，示出了为SiC MESFET提出的晶体管设计的例子，其中源金属延伸到管芯侧面以便键合。二个金属层被用于晶体管，第一个用于连接漏叉指13的金属化，而第二个用于跨过连接源叉指14的金属与连接栅叉指15的金属之间，以便在具有相应键合焊点的晶体管的同一侧上连接源和漏叉指。SiC管芯最好是矩形且在沿基本上平行于源键合引线的方向上具有最小尺寸。而且，所有的源叉指被公共源金属线或平行于安置栅键合焊点1的侧延伸的源走线16连接在一起。源键合引线6被固定到垂直于栅键合引线7和漏键合引线8的晶体管短边上的源金属线16。每一组引线中的所有键合引线最好平行。管芯的整个短边可以用作键合区，这提供了具有源键合引线最佳数目和安排自由度的额外优点。如图2中虚线所示，提出的晶体管可以被置于管芯上，其中各组键合焊点中的键合焊点最好以基本上相等的间距隔开。
虽然以上描述包括大量细节和指标，但要理解的是，这些仅仅是本发明的示例而不构成限制。对于本技术的熟练人员来说，许多不偏离所附权利要求及其法律上等效条文所定义的本发明的构思与范围的修正是显而易见。

Claims (9)

1.一种用焊点上的键合引线来互连包含管芯的射频功率SiC场效应晶体管的方法，其特征是在管芯的每一不同的侧面上安置至少一个键合焊点，使大多数源键合引线被垂直于栅和漏键合引线安置。
2.一种用焊点上的键合引线来互连包含管芯的射频功率SiC场效应晶体管的器件，其特征是在管芯的每一不同的侧面上提供至少一个键合焊点，其中大多数源键合引线(6)被垂直于栅和漏键合引线(7，8)安置。
3.根据权利要求2的器件，其特征是所有源键合引线被垂直于所有栅和漏键合引线安置。
4.一种射频功率SiC场效应晶体管，它包含：
SiC管芯；
制作在SiC管芯(5)上的叉指电极，各个电极具有至少一个包括至少一个键合焊点的电极叉指；
两组源键合引线，包括在管芯相对侧上连接到源电极键合焊点组中的键合焊点并沿平行于电极的电极叉指的方向延伸的至少二个源键合引线(6)；
一组栅键合引线，包括连接到栅电极键合焊点组中的键合焊点并平行于电极的电极叉指方向延伸的至少一个栅键合引线(7)；
一组漏键合引线，包括连接到漏电极键合焊点组中的键合焊点并平行于电极的电极叉指方向延伸的至少一个漏键合引线(8)，其中二个源键合引线或大多数源键合引线被垂直于栅和漏键合引线安置。
5.根据权利要求4的器件，其中所有源键合引线(6)被垂直于栅和漏键合引线(7，8)安置。
6.根据权利要求4的器件，其中SiC管芯(5)是矩形，且在平行于大多数源键合引线(6)的方向上具有最小尺寸。
7.根据权利要求4的器件，其中叉指电极各包括多个键合焊点，此器件还包含连接到各个电极的各个所述多个键合焊点的额外的键合引线。
8.根据权利要求4的器件，其中每一组引线中的所有键合引线是平行的。
9.根据权利要求4的器件，其中各组键合焊点中的多个键合焊点以基本上相等的间距分隔开。
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