TW353159B - Method of developing positive photoresist and compositions therefor - Google Patents

Method of developing positive photoresist and compositions therefor

Info

Publication number
TW353159B
TW353159B TW085100831A TW85100831A TW353159B TW 353159 B TW353159 B TW 353159B TW 085100831 A TW085100831 A TW 085100831A TW 85100831 A TW85100831 A TW 85100831A TW 353159 B TW353159 B TW 353159B
Authority
TW
Taiwan
Prior art keywords
film
substrate
developer composition
positive photoresist
class
Prior art date
Application number
TW085100831A
Other languages
English (en)
Inventor
Stanley A Ficner
John Magvas
Christopher F Lyons
Wayne M Moreau
Marina V Plat
Original Assignee
Hoechst Celanese Corp
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp, Ibm filed Critical Hoechst Celanese Corp
Application granted granted Critical
Publication of TW353159B publication Critical patent/TW353159B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW085100831A 1995-01-20 1996-01-24 Method of developing positive photoresist and compositions therefor TW353159B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37617295A 1995-01-20 1995-01-20

Publications (1)

Publication Number Publication Date
TW353159B true TW353159B (en) 1999-02-21

Family

ID=23483983

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100831A TW353159B (en) 1995-01-20 1996-01-24 Method of developing positive photoresist and compositions therefor

Country Status (8)

Country Link
US (1) US5821036A (zh)
EP (1) EP0804753B1 (zh)
JP (1) JP3578462B2 (zh)
KR (1) KR100394445B1 (zh)
CN (1) CN1072813C (zh)
DE (1) DE69612656T2 (zh)
TW (1) TW353159B (zh)
WO (1) WO1996022564A1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3728945B2 (ja) 1998-10-30 2005-12-21 オルガノ株式会社 フォトレジスト現像廃液からの現像液の回収再利用方法及び装置
TW527363B (en) * 1999-09-08 2003-04-11 Shinetsu Chemical Co Polymers, chemical amplification resist compositions and patterning process
US6120978A (en) * 2000-01-06 2000-09-19 Air Products And Chemicals, Inc. Use of N,N-dialkyl ureas in photoresist developers
US6136514A (en) * 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
JP2002049161A (ja) * 2000-08-04 2002-02-15 Clariant (Japan) Kk 被覆層現像用界面活性剤水溶液
US20020187438A1 (en) * 2001-06-12 2002-12-12 Ching-Yu Chang Development method for manufacturing semiconductors
KR100814452B1 (ko) * 2001-10-03 2008-03-17 에이에스엠엘 유에스, 인코포레이티드 표면에 가까운 액체 분배 젯트 사이의 상호 오염을 줄이기 위한 방법과 장치
WO2003073169A2 (en) * 2002-02-21 2003-09-04 Honeywell International Inc. Fluorinated molecules and methods of making and using same
WO2003095505A1 (en) * 2002-05-07 2003-11-20 Honeywell International Inc. Fluorinated polymers
US20040091813A1 (en) * 2002-11-05 2004-05-13 Honeywell International Inc. Fluorinated polymers
KR100634164B1 (ko) * 2003-03-13 2006-10-16 삼성전자주식회사 반도체 제조 공정에 사용되는 세정액
TWI304917B (en) * 2003-05-20 2009-01-01 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition for discharge nozzle type application and resist pattern formation method
US7083903B2 (en) * 2003-06-17 2006-08-01 Lam Research Corporation Methods of etching photoresist on substrates
US20060008731A1 (en) * 2004-07-09 2006-01-12 Michael Van Der Puy Novel photoresist monomers and polymers
US20060008730A1 (en) * 2004-07-09 2006-01-12 Puy Michael V D Monomers for photoresists bearing acid-labile groups of reduced optical density
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
US4710449A (en) * 1986-01-29 1987-12-01 Petrarch Systems, Inc. High contrast low metal ion positive photoresist developing method using aqueous base solutions with surfactants
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists

Also Published As

Publication number Publication date
EP0804753A1 (en) 1997-11-05
DE69612656T2 (de) 2001-10-18
KR19980701480A (ko) 1998-05-15
JP3578462B2 (ja) 2004-10-20
DE69612656D1 (de) 2001-06-07
US5821036A (en) 1998-10-13
EP0804753B1 (en) 2001-05-02
CN1072813C (zh) 2001-10-10
JPH10512973A (ja) 1998-12-08
CN1168179A (zh) 1997-12-17
WO1996022564A1 (en) 1996-07-25
KR100394445B1 (ko) 2004-05-24

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