ATE435441T1 - Lösemittelsystem für positiv-arbeitende photoresiste - Google Patents
Lösemittelsystem für positiv-arbeitende photoresisteInfo
- Publication number
- ATE435441T1 ATE435441T1 AT99950596T AT99950596T ATE435441T1 AT E435441 T1 ATE435441 T1 AT E435441T1 AT 99950596 T AT99950596 T AT 99950596T AT 99950596 T AT99950596 T AT 99950596T AT E435441 T1 ATE435441 T1 AT E435441T1
- Authority
- AT
- Austria
- Prior art keywords
- photoresist
- positive
- solvent system
- weight percent
- working photoresists
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 239000002904 solvent Substances 0.000 title 1
- -1 alkylene glycol alkyl ether Chemical class 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 abstract 1
- 239000003504 photosensitizing agent Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000011877 solvent mixture Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Pyrane Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17205198A | 1998-10-14 | 1998-10-14 | |
| PCT/EP1999/007299 WO2000022481A1 (en) | 1998-10-14 | 1999-10-02 | A mixed solvent system for positive photoresists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE435441T1 true ATE435441T1 (de) | 2009-07-15 |
Family
ID=22626161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99950596T ATE435441T1 (de) | 1998-10-14 | 1999-10-02 | Lösemittelsystem für positiv-arbeitende photoresiste |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6391514B1 (de) |
| EP (1) | EP1131675B1 (de) |
| JP (1) | JP2002527795A (de) |
| KR (1) | KR100551934B1 (de) |
| CN (1) | CN1160597C (de) |
| AT (1) | ATE435441T1 (de) |
| DE (1) | DE69941060D1 (de) |
| MY (1) | MY117069A (de) |
| TW (1) | TWI234051B (de) |
| WO (1) | WO2000022481A1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7642043B2 (en) * | 2005-11-16 | 2010-01-05 | Shin-Etsu Chemical Co., Ltd. | Rework process for photoresist film |
| TWI443461B (zh) | 2005-12-09 | 2014-07-01 | Fujifilm Corp | 正型光阻組成物、用於正型光阻組成物之樹脂、用於合成該樹脂之化合物及使用該正型光阻組成物之圖案形成方法 |
| JP2007260895A (ja) * | 2006-03-28 | 2007-10-11 | Erich Thallner | マイクロ構造および／またはナノ構造の構造基板をコーティングするための装置および方法 |
| EP1840940B8 (de) | 2006-03-28 | 2014-11-26 | Thallner, Erich, Dipl.-Ing. | Vorrichtung und Verfahren zum Beschichten eines mikro- und/oder nanostrukturierten Struktursubstrats |
| KR20130084240A (ko) * | 2010-06-03 | 2013-07-24 | 스미또모 베이크라이트 가부시키가이샤 | 감광성 수지 조성물 및 감광성 수지 조성물의 제조 방법 |
| US10031416B2 (en) | 2013-08-07 | 2018-07-24 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
| WO2015022779A1 (en) * | 2013-08-14 | 2015-02-19 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
| JP2018056178A (ja) * | 2016-09-26 | 2018-04-05 | パナソニックＩｐマネジメント株式会社 | 素子チップの製造方法 |
| JP6775174B2 (ja) * | 2019-10-11 | 2020-10-28 | パナソニックＩｐマネジメント株式会社 | 素子チップの製造方法 |
| CN120065647B (zh) * | 2025-04-25 | 2025-07-11 | 北京北旭电子材料有限公司 | 一种高分辨率的显示面板用光刻胶制备方法及系统 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196289A (en) * | 1989-09-07 | 1993-03-23 | Ocg Microelectronic Materials, Inc. | Selected block phenolic oligomers and their use in radiation-sensitive resist compositions |
| CA2067042A1 (en) * | 1991-04-26 | 1992-10-27 | Yasunori Uetani | Positive resist composition |
| US5221592A (en) * | 1992-03-06 | 1993-06-22 | Hoechst Celanese Corporation | Diazo ester of a benzolactone ring compound and positive photoresist composition and element utilizing the diazo ester |
| JP3488332B2 (ja) * | 1996-02-02 | 2004-01-19 | 東京応化工業株式会社 | ポジ型ホトレジスト塗布液 |
| WO1998027462A1 (en) * | 1996-12-18 | 1998-06-25 | Clariant International Ltd. | Photoresist composition containing a polymeric additive |
| KR100376984B1 (ko) * | 1998-04-30 | 2003-07-16 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
-
1999
- 1999-09-09 TW TW088115562A patent/TWI234051B/zh not_active IP Right Cessation
- 1999-10-02 CN CNB998120057A patent/CN1160597C/zh not_active Expired - Fee Related
- 1999-10-02 EP EP99950596A patent/EP1131675B1/de not_active Expired - Lifetime
- 1999-10-02 AT AT99950596T patent/ATE435441T1/de not_active IP Right Cessation
- 1999-10-02 KR KR1020017004604A patent/KR100551934B1/ko not_active Expired - Fee Related
- 1999-10-02 DE DE69941060T patent/DE69941060D1/de not_active Expired - Fee Related
- 1999-10-02 JP JP2000576320A patent/JP2002527795A/ja active Pending
- 1999-10-02 WO PCT/EP1999/007299 patent/WO2000022481A1/en not_active Ceased
- 1999-10-12 MY MYPI99004389A patent/MY117069A/en unknown
-
2000
- 2000-08-18 US US09/642,128 patent/US6391514B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010088864A (ko) | 2001-09-28 |
| US6391514B1 (en) | 2002-05-21 |
| TWI234051B (en) | 2005-06-11 |
| CN1160597C (zh) | 2004-08-04 |
| EP1131675A1 (de) | 2001-09-12 |
| CN1323410A (zh) | 2001-11-21 |
| MY117069A (en) | 2004-04-30 |
| KR100551934B1 (ko) | 2006-02-16 |
| DE69941060D1 (de) | 2009-08-13 |
| EP1131675B1 (de) | 2009-07-01 |
| JP2002527795A (ja) | 2002-08-27 |
| WO2000022481A1 (en) | 2000-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |