US5862223A
(en)
|
1996-07-24 |
1999-01-19 |
Walker Asset Management Limited Partnership |
Method and apparatus for a cryptographically-assisted commercial network system designed to facilitate and support expert-based commerce
|
US6066836A
(en)
*
|
1996-09-23 |
2000-05-23 |
Applied Materials, Inc. |
High temperature resistive heater for a process chamber
|
US6055927A
(en)
|
1997-01-14 |
2000-05-02 |
Applied Komatsu Technology, Inc. |
Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
|
US6749717B1
(en)
*
|
1997-02-04 |
2004-06-15 |
Micron Technology, Inc. |
Device for in-situ cleaning of an inductively-coupled plasma chambers
|
US6039834A
(en)
|
1997-03-05 |
2000-03-21 |
Applied Materials, Inc. |
Apparatus and methods for upgraded substrate processing system with microwave plasma source
|
US8075789B1
(en)
*
|
1997-07-11 |
2011-12-13 |
Applied Materials, Inc. |
Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
|
US6379575B1
(en)
*
|
1997-10-21 |
2002-04-30 |
Applied Materials, Inc. |
Treatment of etching chambers using activated cleaning gas
|
US6797188B1
(en)
|
1997-11-12 |
2004-09-28 |
Meihua Shen |
Self-cleaning process for etching silicon-containing material
|
JP3381774B2
(ja)
*
|
1997-12-24 |
2003-03-04 |
東京エレクトロン株式会社 |
CVD−Ti膜の成膜方法
|
US6042654A
(en)
*
|
1998-01-13 |
2000-03-28 |
Applied Materials, Inc. |
Method of cleaning CVD cold-wall chamber and exhaust lines
|
US6067999A
(en)
*
|
1998-04-23 |
2000-05-30 |
International Business Machines Corporation |
Method for deposition tool cleaning
|
US6182603B1
(en)
*
|
1998-07-13 |
2001-02-06 |
Applied Komatsu Technology, Inc. |
Surface-treated shower head for use in a substrate processing chamber
|
US6814837B1
(en)
*
|
1998-10-20 |
2004-11-09 |
Advance Micro Devices, Inc. |
Controlled gas supply line apparatus and process for infilm and onfilm defect reduction
|
US20030101938A1
(en)
*
|
1998-10-27 |
2003-06-05 |
Applied Materials, Inc. |
Apparatus for the deposition of high dielectric constant films
|
US5970995A
(en)
*
|
1998-12-31 |
1999-10-26 |
Schy; William W. |
Kit for removing calcium deposits in a shower head without removing the shower head from a shower arm
|
US6374831B1
(en)
*
|
1999-02-04 |
2002-04-23 |
Applied Materials, Inc. |
Accelerated plasma clean
|
KR100513395B1
(ko)
*
|
1999-02-04 |
2005-09-09 |
삼성전자주식회사 |
화학 기상 증착용 웨이퍼 안착대의 표면 정화 장치
|
US20020033183A1
(en)
*
|
1999-05-29 |
2002-03-21 |
Sheng Sun |
Method and apparatus for enhanced chamber cleaning
|
CN1374890A
(zh)
|
1999-07-12 |
2002-10-16 |
Asml美国公司 |
使用组合化学品原位清洗半导体制造装置的方法和系统
|
US6468490B1
(en)
|
2000-06-29 |
2002-10-22 |
Applied Materials, Inc. |
Abatement of fluorine gas from effluent
|
US6689252B1
(en)
|
1999-07-28 |
2004-02-10 |
Applied Materials, Inc. |
Abatement of hazardous gases in effluent
|
US6346489B1
(en)
|
1999-09-02 |
2002-02-12 |
Applied Materials, Inc. |
Precleaning process for metal plug that minimizes damage to low-κ dielectric
|
KR100767762B1
(ko)
*
|
2000-01-18 |
2007-10-17 |
에이에스엠 저펜 가부시기가이샤 |
자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
|
US6783627B1
(en)
*
|
2000-01-20 |
2004-08-31 |
Kokusai Semiconductor Equipment Corporation |
Reactor with remote plasma system and method of processing a semiconductor substrate
|
US6500356B2
(en)
*
|
2000-03-27 |
2002-12-31 |
Applied Materials, Inc. |
Selectively etching silicon using fluorine without plasma
|
US20030010354A1
(en)
*
|
2000-03-27 |
2003-01-16 |
Applied Materials, Inc. |
Fluorine process for cleaning semiconductor process chamber
|
US6387207B1
(en)
*
|
2000-04-28 |
2002-05-14 |
Applied Materials, Inc. |
Integration of remote plasma generator with semiconductor processing chamber
|
DE10024699A1
(de)
*
|
2000-05-18 |
2001-11-29 |
Bosch Gmbh Robert |
Plasmaätzanlage
|
JP4790896B2
(ja)
*
|
2000-05-26 |
2011-10-12 |
エーユー オプトロニクス コーポレイション |
トップゲート型tftを含むアクティブマトリックスデバイスの製造方法および製造装置
|
EP1174910A3
(en)
*
|
2000-07-20 |
2010-01-06 |
Applied Materials, Inc. |
Method and apparatus for dechucking a substrate
|
JP4730572B2
(ja)
*
|
2000-08-21 |
2011-07-20 |
株式会社アルバック |
プラズマ成膜装置及びそのクリーニング方法
|
US6614181B1
(en)
*
|
2000-08-23 |
2003-09-02 |
Applied Materials, Inc. |
UV radiation source for densification of CVD carbon-doped silicon oxide films
|
US6566278B1
(en)
|
2000-08-24 |
2003-05-20 |
Applied Materials Inc. |
Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
|
JP2002129334A
(ja)
*
|
2000-10-26 |
2002-05-09 |
Applied Materials Inc |
気相堆積装置のクリーニング方法及び気相堆積装置
|
US6843258B2
(en)
*
|
2000-12-19 |
2005-01-18 |
Applied Materials, Inc. |
On-site cleaning gas generation for process chamber cleaning
|
US6905547B1
(en)
*
|
2000-12-21 |
2005-06-14 |
Genus, Inc. |
Method and apparatus for flexible atomic layer deposition
|
US6461972B1
(en)
*
|
2000-12-22 |
2002-10-08 |
Lsi Logic Corporation |
Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
|
US6852242B2
(en)
|
2001-02-23 |
2005-02-08 |
Zhi-Wen Sun |
Cleaning of multicompositional etchant residues
|
US6761796B2
(en)
*
|
2001-04-06 |
2004-07-13 |
Axcelis Technologies, Inc. |
Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
|
JP4733856B2
(ja)
*
|
2001-05-10 |
2011-07-27 |
ルネサスエレクトロニクス株式会社 |
高密度プラズマcvd装置のリモートプラズマクリーニング方法
|
US7159597B2
(en)
*
|
2001-06-01 |
2007-01-09 |
Applied Materials, Inc. |
Multistep remote plasma clean process
|
US6868856B2
(en)
*
|
2001-07-13 |
2005-03-22 |
Applied Materials, Inc. |
Enhanced remote plasma cleaning
|
US20030062064A1
(en)
*
|
2001-09-28 |
2003-04-03 |
Infineon Technologies North America Corp. |
Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
|
US20030121796A1
(en)
*
|
2001-11-26 |
2003-07-03 |
Siegele Stephen H |
Generation and distribution of molecular fluorine within a fabrication facility
|
US20040151656A1
(en)
*
|
2001-11-26 |
2004-08-05 |
Siegele Stephen H. |
Modular molecular halogen gas generation system
|
US20030098038A1
(en)
*
|
2001-11-26 |
2003-05-29 |
Siegele Stephen H. |
System and method for on-site generation and distribution of fluorine for fabrication processes
|
US20090001524A1
(en)
*
|
2001-11-26 |
2009-01-01 |
Siegele Stephen H |
Generation and distribution of a fluorine gas
|
US20040037768A1
(en)
*
|
2001-11-26 |
2004-02-26 |
Robert Jackson |
Method and system for on-site generation and distribution of a process gas
|
US6818570B2
(en)
*
|
2002-03-04 |
2004-11-16 |
Asm Japan K.K. |
Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
|
JP2003264186A
(ja)
*
|
2002-03-11 |
2003-09-19 |
Asm Japan Kk |
Cvd装置処理室のクリーニング方法
|
US6843858B2
(en)
*
|
2002-04-02 |
2005-01-18 |
Applied Materials, Inc. |
Method of cleaning a semiconductor processing chamber
|
US6845734B2
(en)
*
|
2002-04-11 |
2005-01-25 |
Micron Technology, Inc. |
Deposition apparatuses configured for utilizing phased microwave radiation
|
US6902629B2
(en)
*
|
2002-04-12 |
2005-06-07 |
Applied Materials, Inc. |
Method for cleaning a process chamber
|
US6861094B2
(en)
*
|
2002-04-25 |
2005-03-01 |
Micron Technology, Inc. |
Methods for forming thin layers of materials on micro-device workpieces
|
US6838114B2
(en)
*
|
2002-05-24 |
2005-01-04 |
Micron Technology, Inc. |
Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
|
US7118783B2
(en)
*
|
2002-06-26 |
2006-10-10 |
Micron Technology, Inc. |
Methods and apparatus for vapor processing of micro-device workpieces
|
US6821347B2
(en)
*
|
2002-07-08 |
2004-11-23 |
Micron Technology, Inc. |
Apparatus and method for depositing materials onto microelectronic workpieces
|
US6955725B2
(en)
*
|
2002-08-15 |
2005-10-18 |
Micron Technology, Inc. |
Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
|
US7025866B2
(en)
*
|
2002-08-21 |
2006-04-11 |
Micron Technology, Inc. |
Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces
|
US20040074516A1
(en)
*
|
2002-10-18 |
2004-04-22 |
Hogle Richard A. |
Sub-atmospheric supply of fluorine to semiconductor process chamber
|
US20040096636A1
(en)
*
|
2002-11-18 |
2004-05-20 |
Applied Materials, Inc. |
Lifting glass substrate without center lift pins
|
JP2004179426A
(ja)
*
|
2002-11-27 |
2004-06-24 |
Tokyo Electron Ltd |
基板処理装置のクリーニング方法
|
US6923189B2
(en)
*
|
2003-01-16 |
2005-08-02 |
Applied Materials, Inc. |
Cleaning of CVD chambers using remote source with cxfyoz based chemistry
|
US6818249B2
(en)
*
|
2003-03-03 |
2004-11-16 |
Micron Technology, Inc. |
Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces
|
US20040200498A1
(en)
*
|
2003-04-08 |
2004-10-14 |
Applied Materials, Inc. |
Method and apparatus for cleaning a substrate processing chamber
|
US7037376B2
(en)
*
|
2003-04-11 |
2006-05-02 |
Applied Materials Inc. |
Backflush chamber clean
|
US7335396B2
(en)
|
2003-04-24 |
2008-02-26 |
Micron Technology, Inc. |
Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
|
US7235138B2
(en)
|
2003-08-21 |
2007-06-26 |
Micron Technology, Inc. |
Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
|
US7344755B2
(en)
|
2003-08-21 |
2008-03-18 |
Micron Technology, Inc. |
Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
|
US7105431B2
(en)
*
|
2003-08-22 |
2006-09-12 |
Micron Technology, Inc. |
Masking methods
|
US7422635B2
(en)
|
2003-08-28 |
2008-09-09 |
Micron Technology, Inc. |
Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
|
US7056806B2
(en)
|
2003-09-17 |
2006-06-06 |
Micron Technology, Inc. |
Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
|
US7282239B2
(en)
|
2003-09-18 |
2007-10-16 |
Micron Technology, Inc. |
Systems and methods for depositing material onto microfeature workpieces in reaction chambers
|
JP3855982B2
(ja)
*
|
2003-09-25 |
2006-12-13 |
セイコーエプソン株式会社 |
クリーニング方法及びクリーニング装置
|
US7371688B2
(en)
*
|
2003-09-30 |
2008-05-13 |
Air Products And Chemicals, Inc. |
Removal of transition metal ternary and/or quaternary barrier materials from a substrate
|
US7323231B2
(en)
|
2003-10-09 |
2008-01-29 |
Micron Technology, Inc. |
Apparatus and methods for plasma vapor deposition processes
|
US7647886B2
(en)
|
2003-10-15 |
2010-01-19 |
Micron Technology, Inc. |
Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
|
US7354631B2
(en)
*
|
2003-11-06 |
2008-04-08 |
Micron Technology, Inc. |
Chemical vapor deposition apparatus and methods
|
US7258892B2
(en)
|
2003-12-10 |
2007-08-21 |
Micron Technology, Inc. |
Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
|
US7247561B2
(en)
*
|
2003-12-11 |
2007-07-24 |
Micron Technology, Inc. |
Method of removing residual contaminants from an environment
|
US20080073559A1
(en)
*
|
2003-12-12 |
2008-03-27 |
Horsky Thomas N |
Controlling the flow of vapors sublimated from solids
|
JP4643588B2
(ja)
|
2003-12-12 |
2011-03-02 |
セメクイップ, インコーポレイテッド |
固体から昇華した蒸気の流れの制御
|
GB0329460D0
(en)
*
|
2003-12-19 |
2004-01-28 |
Oxford Instr Plasma Technology |
Apparatus and method for plasma processing
|
US20050155625A1
(en)
*
|
2004-01-20 |
2005-07-21 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Chamber cleaning method
|
US7906393B2
(en)
|
2004-01-28 |
2011-03-15 |
Micron Technology, Inc. |
Methods for forming small-scale capacitor structures
|
US7267842B2
(en)
*
|
2004-03-15 |
2007-09-11 |
Air Products And Chemicals, Inc. |
Method for removing titanium dioxide deposits from a reactor
|
US20050258137A1
(en)
*
|
2004-03-24 |
2005-11-24 |
Sawin Herbert H |
Remote chamber methods for removing surface deposits
|
US20050221020A1
(en)
*
|
2004-03-30 |
2005-10-06 |
Tokyo Electron Limited |
Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
|
US7584942B2
(en)
*
|
2004-03-31 |
2009-09-08 |
Micron Technology, Inc. |
Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
|
US20050221618A1
(en)
*
|
2004-03-31 |
2005-10-06 |
Amrhein Frederick J |
System for controlling a plenum output flow geometry
|
US7358192B2
(en)
*
|
2004-04-08 |
2008-04-15 |
Applied Materials, Inc. |
Method and apparatus for in-situ film stack processing
|
US8133554B2
(en)
|
2004-05-06 |
2012-03-13 |
Micron Technology, Inc. |
Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
|
US20060016459A1
(en)
*
|
2004-05-12 |
2006-01-26 |
Mcfarlane Graham |
High rate etching using high pressure F2 plasma with argon dilution
|
US7115524B2
(en)
|
2004-05-17 |
2006-10-03 |
Micron Technology, Inc. |
Methods of processing a semiconductor substrate
|
US7699932B2
(en)
|
2004-06-02 |
2010-04-20 |
Micron Technology, Inc. |
Reactors, systems and methods for depositing thin films onto microfeature workpieces
|
KR100596488B1
(ko)
*
|
2004-06-16 |
2006-07-03 |
삼성전자주식회사 |
반도체 기판 가공 방법
|
US20060005770A1
(en)
*
|
2004-07-09 |
2006-01-12 |
Robin Tiner |
Independently moving substrate supports
|
US7434712B2
(en)
*
|
2004-07-09 |
2008-10-14 |
Blackhawk Industries Product Group Unlimited Llc |
Hooded holster
|
US20060017043A1
(en)
*
|
2004-07-23 |
2006-01-26 |
Dingjun Wu |
Method for enhancing fluorine utilization
|
US7581549B2
(en)
*
|
2004-07-23 |
2009-09-01 |
Air Products And Chemicals, Inc. |
Method for removing carbon-containing residues from a substrate
|
US20060021633A1
(en)
*
|
2004-07-27 |
2006-02-02 |
Applied Materials, Inc. |
Closed loop clean gas control
|
US20060054183A1
(en)
*
|
2004-08-27 |
2006-03-16 |
Thomas Nowak |
Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
|
US20060062914A1
(en)
*
|
2004-09-21 |
2006-03-23 |
Diwakar Garg |
Apparatus and process for surface treatment of substrate using an activated reactive gas
|
JP2006128485A
(ja)
|
2004-10-29 |
2006-05-18 |
Asm Japan Kk |
半導体処理装置
|
US20060090773A1
(en)
*
|
2004-11-04 |
2006-05-04 |
Applied Materials, Inc. |
Sulfur hexafluoride remote plasma source clean
|
US7736599B2
(en)
|
2004-11-12 |
2010-06-15 |
Applied Materials, Inc. |
Reactor design to reduce particle deposition during process abatement
|
TWI365919B
(en)
*
|
2004-12-28 |
2012-06-11 |
Tokyo Electron Ltd |
Film formation apparatus and method of using the same
|
US20060144820A1
(en)
*
|
2004-12-30 |
2006-07-06 |
Sawin Herbert H |
Remote chamber methods for removing surface deposits
|
US20060144819A1
(en)
*
|
2004-12-30 |
2006-07-06 |
Sawin Herbert H |
Remote chamber methods for removing surface deposits
|
US7534469B2
(en)
*
|
2005-03-31 |
2009-05-19 |
Asm Japan K.K. |
Semiconductor-processing apparatus provided with self-cleaning device
|
US20060266288A1
(en)
*
|
2005-05-27 |
2006-11-30 |
Applied Materials, Inc. |
High plasma utilization for remote plasma clean
|
JP2009503905A
(ja)
*
|
2005-08-02 |
2009-01-29 |
マサチューセッツ インスティテュート オブ テクノロジー |
表面沈着物の除去および化学蒸着(cvd)チャンバーの内部の内部表面の不動態化方法
|
RU2008108012A
(ru)
*
|
2005-08-02 |
2009-09-10 |
Массачусетс Инститьют Оф Текнолоджи (Us) |
Способ применения nf3 для удаления поверхностных отложений
|
US20090047447A1
(en)
*
|
2005-08-02 |
2009-02-19 |
Sawin Herbert H |
Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
|
US20070051388A1
(en)
|
2005-09-06 |
2007-03-08 |
Applied Materials, Inc. |
Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
|
JP4823628B2
(ja)
*
|
2005-09-26 |
2011-11-24 |
東京エレクトロン株式会社 |
基板処理方法および記録媒体
|
CN101292059A
(zh)
*
|
2005-10-17 |
2008-10-22 |
Oc欧瑞康巴尔斯公司 |
用于利用远程等离子体源的大面积等离子体增强化学气相沉积装置的清洗器具
|
WO2007053626A2
(en)
|
2005-10-31 |
2007-05-10 |
Applied Materials, Inc. |
Process abatement reactor
|
US20070107750A1
(en)
*
|
2005-11-14 |
2007-05-17 |
Sawin Herbert H |
Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
|
US20070267143A1
(en)
*
|
2006-05-16 |
2007-11-22 |
Applied Materials, Inc. |
In situ cleaning of CVD system exhaust
|
US7879184B2
(en)
|
2006-06-20 |
2011-02-01 |
Lam Research Corporation |
Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
|
US7727906B1
(en)
|
2006-07-26 |
2010-06-01 |
Novellus Systems, Inc. |
H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
|
KR100794661B1
(ko)
*
|
2006-08-18 |
2008-01-14 |
삼성전자주식회사 |
기판 처리 장치 및 그 장치의 세정 방법
|
US7789965B2
(en)
*
|
2006-09-19 |
2010-09-07 |
Asm Japan K.K. |
Method of cleaning UV irradiation chamber
|
US20080289650A1
(en)
*
|
2007-05-24 |
2008-11-27 |
Asm America, Inc. |
Low-temperature cleaning of native oxide
|
US20090056743A1
(en)
*
|
2007-08-31 |
2009-03-05 |
Soo Young Choi |
Method of cleaning plasma enhanced chemical vapor deposition chamber
|
US20090071406A1
(en)
*
|
2007-09-19 |
2009-03-19 |
Soo Young Choi |
Cooled backing plate
|
US7875125B2
(en)
*
|
2007-09-21 |
2011-01-25 |
Semequip, Inc. |
Method for extending equipment uptime in ion implantation
|
US8118946B2
(en)
|
2007-11-30 |
2012-02-21 |
Wesley George Lau |
Cleaning process residues from substrate processing chamber components
|
WO2009082763A2
(en)
*
|
2007-12-25 |
2009-07-02 |
Applied Materials, Inc. |
Method and apparatus for controlling plasma uniformity
|
US8262800B1
(en)
|
2008-02-12 |
2012-09-11 |
Novellus Systems, Inc. |
Methods and apparatus for cleaning deposition reactors
|
US7871937B2
(en)
|
2008-05-16 |
2011-01-18 |
Asm America, Inc. |
Process and apparatus for treating wafers
|
US8252112B2
(en)
*
|
2008-09-12 |
2012-08-28 |
Ovshinsky Innovation, Llc |
High speed thin film deposition via pre-selected intermediate
|
US7972961B2
(en)
*
|
2008-10-09 |
2011-07-05 |
Asm Japan K.K. |
Purge step-controlled sequence of processing semiconductor wafers
|
US7967913B2
(en)
*
|
2008-10-22 |
2011-06-28 |
Applied Materials, Inc. |
Remote plasma clean process with cycled high and low pressure clean steps
|
JP5225389B2
(ja)
*
|
2008-10-28 |
2013-07-03 |
三菱電機株式会社 |
プラズマcvd装置、半導体膜の製造方法、薄膜太陽電池の製造方法およびプラズマcvd装置のクリーニング方法
|
US8216380B2
(en)
*
|
2009-01-08 |
2012-07-10 |
Asm America, Inc. |
Gap maintenance for opening to process chamber
|
US8591659B1
(en)
|
2009-01-16 |
2013-11-26 |
Novellus Systems, Inc. |
Plasma clean method for deposition chamber
|
US20100203242A1
(en)
*
|
2009-02-06 |
2010-08-12 |
Applied Materials, Inc. |
self-cleaning susceptor for solar cell processing
|
US8287648B2
(en)
|
2009-02-09 |
2012-10-16 |
Asm America, Inc. |
Method and apparatus for minimizing contamination in semiconductor processing chamber
|
US8900471B2
(en)
*
|
2009-02-27 |
2014-12-02 |
Applied Materials, Inc. |
In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
|
TWI394986B
(zh)
*
|
2009-11-09 |
2013-05-01 |
Global Material Science Co Ltd |
擴散板結構及其製作方法
|
CN102598876B
(zh)
*
|
2009-11-17 |
2018-05-04 |
应用材料公司 |
具有电极处rf匹配的大面积等离子体处理腔室
|
US20110207256A1
(en)
*
|
2010-02-24 |
2011-08-25 |
Applied Materials, Inc. |
In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
|
US20110237051A1
(en)
*
|
2010-03-26 |
2011-09-29 |
Kenneth Lee Hess |
Process and apparatus for deposition of multicomponent semiconductor layers
|
DE112011101134T5
(de)
|
2010-03-30 |
2013-01-10 |
Applied Materials, Inc. |
Verfahren zum Bilden einer negativ geladenen Passivierungsschicht über einem verteilten p-dotierten Bereich
|
CN101837357B
(zh)
*
|
2010-05-04 |
2011-10-05 |
宁波大学 |
一种等离子体清洗装置
|
JP5548028B2
(ja)
*
|
2010-05-14 |
2014-07-16 |
株式会社ランドマークテクノロジー |
堆積チャンバのリモートクリーニング方法
|
EP2426737A1
(en)
|
2010-09-03 |
2012-03-07 |
Applied Materials, Inc. |
Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
|
EP2439792A1
(en)
|
2010-10-05 |
2012-04-11 |
Applied Materials, Inc. |
Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
|
WO2012113441A1
(en)
|
2011-02-21 |
2012-08-30 |
Applied Materials, Inc. |
Thin-film solar fabrication process, deposition method for a layer stack of a solar cell, and solar cell precursor
|
EP2523227A1
(en)
|
2011-05-13 |
2012-11-14 |
Applied Materials, Inc. |
Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack
|
CN106933063B
(zh)
|
2012-03-20 |
2019-01-18 |
迈普尔平版印刷Ip有限公司 |
电子射束光刻系统
|
US9981293B2
(en)
|
2016-04-21 |
2018-05-29 |
Mapper Lithography Ip B.V. |
Method and system for the removal and/or avoidance of contamination in charged particle beam systems
|
US10428426B2
(en)
*
|
2016-04-22 |
2019-10-01 |
Applied Materials, Inc. |
Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime
|
JP6749225B2
(ja)
*
|
2016-12-06 |
2020-09-02 |
東京エレクトロン株式会社 |
クリーニング方法
|
DE102017208329A1
(de)
*
|
2017-05-17 |
2018-11-22 |
Ejot Gmbh & Co. Kg |
Berührungsfreie Reinigungsvorrichtung
|
US20180340257A1
(en)
*
|
2017-05-25 |
2018-11-29 |
Applied Materials, Inc. |
Diffuser for uniformity improvement in display pecvd applications
|
US10872804B2
(en)
|
2017-11-03 |
2020-12-22 |
Asm Ip Holding B.V. |
Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
|
US10872803B2
(en)
|
2017-11-03 |
2020-12-22 |
Asm Ip Holding B.V. |
Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
|
US20210391156A1
(en)
*
|
2020-06-10 |
2021-12-16 |
Applied Materials, Inc. |
Clean unit for chamber exhaust cleaning
|