JP4578314B2 - 高出力遠隔起源を用いた堆積チャンバクリーニング装置 - Google Patents
高出力遠隔起源を用いた堆積チャンバクリーニング装置 Download PDFInfo
- Publication number
- JP4578314B2 JP4578314B2 JP2005132609A JP2005132609A JP4578314B2 JP 4578314 B2 JP4578314 B2 JP 4578314B2 JP 2005132609 A JP2005132609 A JP 2005132609A JP 2005132609 A JP2005132609 A JP 2005132609A JP 4578314 B2 JP4578314 B2 JP 4578314B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- remote
- deposition
- precursor gas
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008021 deposition Effects 0.000 title claims description 99
- 238000004140 cleaning Methods 0.000 title claims description 34
- 239000007789 gas Substances 0.000 claims description 121
- 238000000151 deposition Methods 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 67
- 239000002243 precursor Substances 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 49
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 230000004913 activation Effects 0.000 claims description 17
- 230000003213 activating effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 33
- 239000000758 substrate Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (50)
- 堆積装置組立体であって、
シャワーヘッドを有する堆積チャンバと、
前記堆積チャンバの外にあり、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記遠隔チャンバ内において、該遠隔チャンバの容積に対して少なくとも12000ワット/リットルの出力のエネルギで前記前駆体ガスを活性化し、前記堆積チャンバの内表面に堆積された材料を除去することのできる反応種を形成する活性源(アクティベーションソース)と、
前記遠隔チャンバから、前記シャワーヘッドを介して前記堆積チャンバ内に前記反応種を流入させるための導管と、
前記遠隔チャンバと前記堆積チャンバの間により大きな差圧を生じさせるように配置された流量絞り
を備える堆積装置組立体。 - 前記活性源が少なくとも3000ワットの出力を供給する請求項1に記載の堆積装置組立体。
- 前記活性源が、12000ワット/リットルから48000ワット/リットルの出力のエネルギを供給するように設計されている請求項1に記載の堆積装置組立体。
- 前記前駆体ガスはフッ素含有ガスを含む請求項1、2、又は3に記載の堆積装置組立体。
- 前記フッ素含有ガスは、NF3、SF6、CF4,及び/又はC2F6を含む請求項4に記載の堆積装置組立体。
- 堆積装置組立体であって、
シャワーヘッドを有する堆積チャンバと、
前記堆積チャンバと連結され、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記遠隔チャンバ内において、該遠隔チャンバの容積に対して少なくとも12000ワット/リットルの出力のエネルギで前記前駆体ガスを活性化し、前記堆積チャンバの内表面に堆積された材料を除去することのできる反応種を形成する活性源(アクティベーションソース)と、
前記遠隔チャンバと連結され、該遠隔チャンバに前駆体ガスを供給する遠隔ガス供給源、を備え、
前記前駆体ガスは前記活性源によって前記遠隔チャンバ内で活性化され反応種を形成し、
前記遠隔チャンバと前記堆積チャンバとの間の少なくとも4.5Torrの差圧により、前記反応種は前記遠隔チャンバから前記シャワーヘッドを介して前記堆積チャンバまで流される、
堆積装置組立体。 - 少なくとも4.5Torrの差圧を生じさせ得る1つ又は2つ以上の流量絞りをさらに備える請求項6に記載の堆積装置組立体。
- 前記遠隔チャンバ内において5Torrから20Torrの圧力を維持することができる1つ又は2つ以上の流量絞りをさらに備える請求項6に記載の堆積装置組立体。
- 前記活性源が前記遠隔チャンバに少なくとも3000ワットの出力を供給することができる請求項6に記載の堆積装置組立体。
- 前記堆積チャンバに連結され、前記前駆体ガスを堆積チャンバ内で励起するための局所活性源をさらに備える請求項6に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項6に記載の堆積装置組立体。
- 前記フッ素含有ガスが、NF3、SF6、CF4及び/又はC2F6を含む請求項11に記載の堆積装置組立体。
- 電子デバイスを製造するにあたって用いられるプロセスチャンバをクリーニングするための装置であって、
前記プロセスチャンバの外にあり、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記遠隔チャンバ内で、該遠隔チャンバの容積に対して少なくとも12000ワット/リットルの出力を用いて前記前駆体ガスを活性化して前記プロセスチャンバの内側表面をクリーニングすることができる反応種を形成するための活性源と、
前記遠隔チャンバから、シャワーヘッドを介して前記プロセスチャンバ内に前記反応種を流入させることができる導管、
を備える装置。 - 前記遠隔チャンバ内において5Torrから20Torrの圧力を維持することができる1つ又は2つ以上の流量絞りをさらに備える請求項13に記載の装置。
- 前記キャリアガスを前記遠隔チャンバ内に流入させるための第2の導管をさらに備える請求項13に記載の装置。
- 前記堆積チャンバを0.5Torrから2Torrの圧力に維持するための真空ポンプをさらに備える請求項13に記載の装置。
- 前記遠隔チャンバと前記プロセスチャンバの間で差圧が生じる請求項13に記載の装置。
- 前記差圧が少なくとも4.5Torrである請求項17に記載の装置。
- 前記プロセスチャンバに連結され、前記前駆体ガスを前記プロセスチャンバ内で励起するための局所活性源をさらに備える請求項13に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項13に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項20に記載の装置。
- プロセスチャンバをクリーニングするための装置であって、
前駆体ガス及びキャリアガスを前記プロセスチャンバの外にある遠隔チャンバ内に供給するための導管と、
前記前駆体ガスを前記遠隔チャンバ内で、該遠隔チャンバの容積に対して少なくとも12000ワット/リットルの出力を用いて活性化して反応種を形成するための活性源と、
前記遠隔チャンバとプロセスチャンバとの間で少なくとも4.5Torrの差圧が生じるように前記反応種を前記遠隔チャンバからシャワーヘッドを介して前記堆積チャンバ内に流入させることができる導管、
を備える装置。 - 前記プロセスチャンバに連結され、前記前駆体ガスをプロセスチャンバ内で励起するための局所活性源をさらに備える請求項22に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項22に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項24に記載の装置。
- 前記遠隔チャンバ内の圧力を5Torrから20Torrに維持することができる1つ又は2つ以上の流量絞りをさらに備える請求項22に記載の装置。
- 電子デバイスを製造するにあたって用いられる堆積チャンバをクリーニングするための装置であって、
前駆体ガス及びキャリアガスを堆積チャンバの外にある遠隔チャンバ内に供給することができる導管と、
前記前駆体ガスを前記遠隔チャンバ内で、遠隔チャンバの容積1リットルあたり少なくとも12000ワット/リットルの出力を用いて活性化して反応種を形成するための活性源と、
前記遠隔チャンバから、シャワーヘッドを介して前記堆積チャンバ内に少なくとも4.5Torrの差圧の下で前記反応種を流入させることができる導管、を備え、
前記遠隔チャンバから前記堆積チャンバに流入した前記反応種は前記堆積チャンバの内側をクリーニングするために用いられる
装置。 - 前記遠隔チャンバの圧力を少なくとも5Torrに維持することができる1つ又は2つ以上の流量絞りをさらに備える請求項27に記載の装置。
- 前記堆積チャンバに連結され、前記前駆体ガスを前記堆積チャンバ内で励起するための局所活性源をさらに備える請求項27に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項27に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項30に記載の装置。
- 電子デバイスを製造するにあたって用いられる堆積チャンバをクリーニングするための装置であって、
前駆体ガス及びキャリアガスを前記プロセスチャンバの外にある遠隔チャンバ内に供給するための導管と、
前駆体ガスを前記遠隔チャンバ内で、該遠隔チャンバの容積に対して少なくとも12000ワット/リットルの出力を用いて活性化して反応種を形成するための活性源と、
前記遠隔チャンバから、シャワーヘッドを介して圧力が2Torr以下である前記堆積チャンバ内に前記反応種を流入させることができる導管、を備え、前記遠隔チャンバから堆積チャンバに流入した反応種は前記堆積チャンバの内部をクリーニングするために用いられる
装置。 - 前記堆積チャンバに連結され、該堆積チャンバ内の前駆体ガスを励起するための局所活性源をさらに備える請求項32に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項32に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項34に記載の装置。
- 前記遠隔チャンバ内の圧力を5Torrから20Torrに維持することができる1つ又は2つ以上の流量絞りをさらに備える請求項32に記載の装置。
- 前記遠隔チャンバと前記プロセスチャンバの間で差圧が生じる請求項32に記載の装置。
- 前記差圧が少なくとも4.5Torrである請求項37に記載の装置。
- プロセスチャンバをクリーニングするための装置であって、
前駆体ガス及びキャリアガスを前記プロセスチャンバの外にある遠隔チャンバ内に供給するための導管と、
前記遠隔チャンバ内で、該遠隔チャンバの容積に対し少なくとも12000ワット/リットルの出力を用いて前記前駆体ガスを活性化して反応種を形成するための活性源と、
前記遠隔チャンバから、シャワーヘッドを介して前記堆積チャンバ内に前記反応種を流入させることができる導管、
とを備え、
前記遠隔チャンバの圧力は5Torrから20Torrである
装置。 - 前記活性源はマイクロ波源である請求項39に記載の装置。
- 前記プロセスチャンバに連結され、前記プロセスチャンバ内の前駆体ガスを励起するための局所活性源をさらに備える請求項39に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項39に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項42に記載の装置。
- 堆積装置組立体であって、
シャワーヘッドを有する堆積チャンバと、
前記堆積チャンバの外にあり、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記前駆体ガスを遠隔ガス源から前記遠隔チャンバ内に供給するための第1の導管と、
前記前駆体ガスを、前記遠隔チャンバの容積に対し少なくとも12000ワット/リットルの出力を用いて前記遠隔チャンバ内で活性化して反応種を形成するための活性源と、
前記遠隔チャンバと前記堆積チャンバとの間の差圧の下に前記反応種を前記遠隔チャンバから前記シャワーヘッドを介して前記堆積チャンバ内に流入させるための第2の導管と、
を備える堆積装置組立体。 - 少なくとも4.5Torrの差圧を生じさせ得る1つ又は2つ以上の流量絞りをさらに備える請求項44に記載の堆積装置組立体。
- 電子デバイスを製造するにあたって用いられるプロセスチャンバをクリーニングするための装置であって、
前記プロセスチャンバの外にあり、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記遠隔チャンバ内で少なくとも12000ワット/リットルの出力を用いて前記前駆体ガスを活性化して前記プロセスチャンバの内側表面をクリーニングすることができる反応種を形成するための活性源と、
前記堆積チャンバに連結された局所活性源と、
前記遠隔チャンバからシャワーヘッドを介して前記プロセスチャンバ内に前記反応種を流入させることができる導管、
を備える装置。 - 前記局所活性源が、前記プロセスチャンバ内の前記前駆体ガスを励起する高周波発生器を備える請求項46に記載の装置。
- 前記前駆体ガスがフッ素含有ガスを含む請求項46に記載の装置。
- 前記フッ素含有ガスがNF3、SF6、CF4及び/又はC2F6を含む請求項48に記載の装置。
- シリコン、ドープされたシリコン、窒化シリコン、又は酸化シリコンが堆積した堆積チャンバをクリーニングするための装置であって、
前記堆積チャンバの外にあり、前駆体ガス及びキャリアガスが導入される遠隔チャンバと、
前記遠隔チャンバ内で少なくとも12000ワット/リットルの出力を用いて前記前駆体ガスを活性化して、シリコン、ドープされたシリコン、窒化シリコン、又は酸化シリコンが堆積した前記堆積チャンバの内側表面をクリーニングすることができる反応種を形成するための活性源と、
前記遠隔チャンバからシャワーヘッドを介して前記堆積チャンバ内に前記反応種を流入させることができる導管、
を備える装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/707,491 US5788778A (en) | 1996-09-16 | 1996-09-16 | Deposition chamber cleaning technique using a high power remote excitation source |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29025697A Division JP3693798B2 (ja) | 1996-09-16 | 1997-09-16 | 高出力遠隔励起源を用いた堆積チャンバクリーニング技術 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005236332A JP2005236332A (ja) | 2005-09-02 |
JP4578314B2 true JP4578314B2 (ja) | 2010-11-10 |
Family
ID=24841912
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29025697A Expired - Lifetime JP3693798B2 (ja) | 1996-09-16 | 1997-09-16 | 高出力遠隔励起源を用いた堆積チャンバクリーニング技術 |
JP2005132609A Expired - Lifetime JP4578314B2 (ja) | 1996-09-16 | 2005-04-28 | 高出力遠隔起源を用いた堆積チャンバクリーニング装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29025697A Expired - Lifetime JP3693798B2 (ja) | 1996-09-16 | 1997-09-16 | 高出力遠隔励起源を用いた堆積チャンバクリーニング技術 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5788778A (ja) |
JP (2) | JP3693798B2 (ja) |
KR (3) | KR19980024578A (ja) |
TW (1) | TW352456B (ja) |
Families Citing this family (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5862223A (en) | 1996-07-24 | 1999-01-19 | Walker Asset Management Limited Partnership | Method and apparatus for a cryptographically-assisted commercial network system designed to facilitate and support expert-based commerce |
US6066836A (en) * | 1996-09-23 | 2000-05-23 | Applied Materials, Inc. | High temperature resistive heater for a process chamber |
US6055927A (en) * | 1997-01-14 | 2000-05-02 | Applied Komatsu Technology, Inc. | Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology |
US6749717B1 (en) * | 1997-02-04 | 2004-06-15 | Micron Technology, Inc. | Device for in-situ cleaning of an inductively-coupled plasma chambers |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
US8075789B1 (en) * | 1997-07-11 | 2011-12-13 | Applied Materials, Inc. | Remote plasma cleaning source having reduced reactivity with a substrate processing chamber |
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6797188B1 (en) | 1997-11-12 | 2004-09-28 | Meihua Shen | Self-cleaning process for etching silicon-containing material |
JP3381774B2 (ja) * | 1997-12-24 | 2003-03-04 | 東京エレクトロン株式会社 | CVD−Ti膜の成膜方法 |
US6042654A (en) * | 1998-01-13 | 2000-03-28 | Applied Materials, Inc. | Method of cleaning CVD cold-wall chamber and exhaust lines |
US6067999A (en) * | 1998-04-23 | 2000-05-30 | International Business Machines Corporation | Method for deposition tool cleaning |
US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6814837B1 (en) * | 1998-10-20 | 2004-11-09 | Advance Micro Devices, Inc. | Controlled gas supply line apparatus and process for infilm and onfilm defect reduction |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US5970995A (en) * | 1998-12-31 | 1999-10-26 | Schy; William W. | Kit for removing calcium deposits in a shower head without removing the shower head from a shower arm |
US6374831B1 (en) * | 1999-02-04 | 2002-04-23 | Applied Materials, Inc. | Accelerated plasma clean |
KR100513395B1 (ko) * | 1999-02-04 | 2005-09-09 | 삼성전자주식회사 | 화학 기상 증착용 웨이퍼 안착대의 표면 정화 장치 |
US20020033183A1 (en) * | 1999-05-29 | 2002-03-21 | Sheng Sun | Method and apparatus for enhanced chamber cleaning |
AU6954300A (en) | 1999-07-12 | 2001-01-30 | Asml Us, Inc. | Method and system for in situ cleaning of semiconductor manufacturing equipment using combination chemistries |
US6468490B1 (en) * | 2000-06-29 | 2002-10-22 | Applied Materials, Inc. | Abatement of fluorine gas from effluent |
US6689252B1 (en) | 1999-07-28 | 2004-02-10 | Applied Materials, Inc. | Abatement of hazardous gases in effluent |
US6346489B1 (en) | 1999-09-02 | 2002-02-12 | Applied Materials, Inc. | Precleaning process for metal plug that minimizes damage to low-κ dielectric |
KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6783627B1 (en) * | 2000-01-20 | 2004-08-31 | Kokusai Semiconductor Equipment Corporation | Reactor with remote plasma system and method of processing a semiconductor substrate |
US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
US6500356B2 (en) * | 2000-03-27 | 2002-12-31 | Applied Materials, Inc. | Selectively etching silicon using fluorine without plasma |
US6387207B1 (en) * | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
DE10024699A1 (de) * | 2000-05-18 | 2001-11-29 | Bosch Gmbh Robert | Plasmaätzanlage |
JP4790896B2 (ja) * | 2000-05-26 | 2011-10-12 | エーユー オプトロニクス コーポレイション | トップゲート型tftを含むアクティブマトリックスデバイスの製造方法および製造装置 |
EP1174910A3 (en) * | 2000-07-20 | 2010-01-06 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
JP4730572B2 (ja) * | 2000-08-21 | 2011-07-20 | 株式会社アルバック | プラズマ成膜装置及びそのクリーニング方法 |
US6614181B1 (en) * | 2000-08-23 | 2003-09-02 | Applied Materials, Inc. | UV radiation source for densification of CVD carbon-doped silicon oxide films |
US6566278B1 (en) | 2000-08-24 | 2003-05-20 | Applied Materials Inc. | Method for densification of CVD carbon-doped silicon oxide films through UV irradiation |
JP2002129334A (ja) * | 2000-10-26 | 2002-05-09 | Applied Materials Inc | 気相堆積装置のクリーニング方法及び気相堆積装置 |
US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
US6905547B1 (en) * | 2000-12-21 | 2005-06-14 | Genus, Inc. | Method and apparatus for flexible atomic layer deposition |
US6461972B1 (en) * | 2000-12-22 | 2002-10-08 | Lsi Logic Corporation | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow |
US6852242B2 (en) | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
US6761796B2 (en) * | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
JP4733856B2 (ja) * | 2001-05-10 | 2011-07-27 | ルネサスエレクトロニクス株式会社 | 高密度プラズマcvd装置のリモートプラズマクリーニング方法 |
US7159597B2 (en) * | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
US6868856B2 (en) * | 2001-07-13 | 2005-03-22 | Applied Materials, Inc. | Enhanced remote plasma cleaning |
US20030062064A1 (en) * | 2001-09-28 | 2003-04-03 | Infineon Technologies North America Corp. | Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma |
US20090001524A1 (en) * | 2001-11-26 | 2009-01-01 | Siegele Stephen H | Generation and distribution of a fluorine gas |
US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
US20030098038A1 (en) * | 2001-11-26 | 2003-05-29 | Siegele Stephen H. | System and method for on-site generation and distribution of fluorine for fabrication processes |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
US6818570B2 (en) * | 2002-03-04 | 2004-11-16 | Asm Japan K.K. | Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength |
JP2003264186A (ja) * | 2002-03-11 | 2003-09-19 | Asm Japan Kk | Cvd装置処理室のクリーニング方法 |
US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US6845734B2 (en) | 2002-04-11 | 2005-01-25 | Micron Technology, Inc. | Deposition apparatuses configured for utilizing phased microwave radiation |
US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
US6861094B2 (en) * | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US7118783B2 (en) * | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6955725B2 (en) * | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US7025866B2 (en) * | 2002-08-21 | 2006-04-11 | Micron Technology, Inc. | Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces |
US20040074516A1 (en) * | 2002-10-18 | 2004-04-22 | Hogle Richard A. | Sub-atmospheric supply of fluorine to semiconductor process chamber |
US20040096636A1 (en) * | 2002-11-18 | 2004-05-20 | Applied Materials, Inc. | Lifting glass substrate without center lift pins |
JP2004179426A (ja) * | 2002-11-27 | 2004-06-24 | Tokyo Electron Ltd | 基板処理装置のクリーニング方法 |
US6923189B2 (en) * | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
US6818249B2 (en) * | 2003-03-03 | 2004-11-16 | Micron Technology, Inc. | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces |
US20040200498A1 (en) * | 2003-04-08 | 2004-10-14 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate processing chamber |
US7037376B2 (en) * | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7235138B2 (en) | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US7105431B2 (en) * | 2003-08-22 | 2006-09-12 | Micron Technology, Inc. | Masking methods |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
JP3855982B2 (ja) * | 2003-09-25 | 2006-12-13 | セイコーエプソン株式会社 | クリーニング方法及びクリーニング装置 |
US7371688B2 (en) * | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
US7323231B2 (en) | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7354631B2 (en) * | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7247561B2 (en) * | 2003-12-11 | 2007-07-24 | Micron Technology, Inc. | Method of removing residual contaminants from an environment |
CN1894763B (zh) | 2003-12-12 | 2010-12-08 | 山米奎普公司 | 用于在离子植入中延长设备正常运行时间的方法及装置 |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
GB0329460D0 (en) * | 2003-12-19 | 2004-01-28 | Oxford Instr Plasma Technology | Apparatus and method for plasma processing |
US20050155625A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chamber cleaning method |
US7906393B2 (en) * | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7267842B2 (en) * | 2004-03-15 | 2007-09-11 | Air Products And Chemicals, Inc. | Method for removing titanium dioxide deposits from a reactor |
US20050258137A1 (en) * | 2004-03-24 | 2005-11-24 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
US20050221020A1 (en) * | 2004-03-30 | 2005-10-06 | Tokyo Electron Limited | Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film |
US20050221618A1 (en) * | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
US7584942B2 (en) * | 2004-03-31 | 2009-09-08 | Micron Technology, Inc. | Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers |
US7358192B2 (en) * | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US20060016459A1 (en) * | 2004-05-12 | 2006-01-26 | Mcfarlane Graham | High rate etching using high pressure F2 plasma with argon dilution |
US7115524B2 (en) | 2004-05-17 | 2006-10-03 | Micron Technology, Inc. | Methods of processing a semiconductor substrate |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
KR100596488B1 (ko) * | 2004-06-16 | 2006-07-03 | 삼성전자주식회사 | 반도체 기판 가공 방법 |
US7434712B2 (en) * | 2004-07-09 | 2008-10-14 | Blackhawk Industries Product Group Unlimited Llc | Hooded holster |
US20060005770A1 (en) * | 2004-07-09 | 2006-01-12 | Robin Tiner | Independently moving substrate supports |
US20060017043A1 (en) * | 2004-07-23 | 2006-01-26 | Dingjun Wu | Method for enhancing fluorine utilization |
US7581549B2 (en) * | 2004-07-23 | 2009-09-01 | Air Products And Chemicals, Inc. | Method for removing carbon-containing residues from a substrate |
US20060021633A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
US20060054183A1 (en) * | 2004-08-27 | 2006-03-16 | Thomas Nowak | Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber |
US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
JP2006128485A (ja) | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
US20060090773A1 (en) * | 2004-11-04 | 2006-05-04 | Applied Materials, Inc. | Sulfur hexafluoride remote plasma source clean |
US7736599B2 (en) | 2004-11-12 | 2010-06-15 | Applied Materials, Inc. | Reactor design to reduce particle deposition during process abatement |
TWI365919B (en) * | 2004-12-28 | 2012-06-11 | Tokyo Electron Ltd | Film formation apparatus and method of using the same |
US20060144819A1 (en) * | 2004-12-30 | 2006-07-06 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
US20060144820A1 (en) * | 2004-12-30 | 2006-07-06 | Sawin Herbert H | Remote chamber methods for removing surface deposits |
US7534469B2 (en) * | 2005-03-31 | 2009-05-19 | Asm Japan K.K. | Semiconductor-processing apparatus provided with self-cleaning device |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
CN101278072A (zh) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | 使用nf3除去表面沉积物的方法 |
WO2007027350A2 (en) * | 2005-08-02 | 2007-03-08 | Massachusetts Institute Of Technology | Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber |
US20090047447A1 (en) * | 2005-08-02 | 2009-02-19 | Sawin Herbert H | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor |
US20070051388A1 (en) | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Apparatus and methods for using high frequency chokes in a substrate deposition apparatus |
JP4823628B2 (ja) * | 2005-09-26 | 2011-11-24 | 東京エレクトロン株式会社 | 基板処理方法および記録媒体 |
KR20080060241A (ko) * | 2005-10-17 | 2008-07-01 | 오씨 외를리콘 발처스 악티엔게젤샤프트 | 원거리 플라즈마 소스를 이용한 대면적 pecvd 장치용클리닝 방법 |
JP5102217B2 (ja) | 2005-10-31 | 2012-12-19 | アプライド マテリアルズ インコーポレイテッド | プロセス削減反応器 |
US20070107750A1 (en) * | 2005-11-14 | 2007-05-17 | Sawin Herbert H | Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers |
US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
US7879184B2 (en) | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US7727906B1 (en) | 2006-07-26 | 2010-06-01 | Novellus Systems, Inc. | H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift |
KR100794661B1 (ko) * | 2006-08-18 | 2008-01-14 | 삼성전자주식회사 | 기판 처리 장치 및 그 장치의 세정 방법 |
US7789965B2 (en) * | 2006-09-19 | 2010-09-07 | Asm Japan K.K. | Method of cleaning UV irradiation chamber |
US20080289650A1 (en) * | 2007-05-24 | 2008-11-27 | Asm America, Inc. | Low-temperature cleaning of native oxide |
US20090056743A1 (en) * | 2007-08-31 | 2009-03-05 | Soo Young Choi | Method of cleaning plasma enhanced chemical vapor deposition chamber |
US20090071406A1 (en) * | 2007-09-19 | 2009-03-19 | Soo Young Choi | Cooled backing plate |
WO2009039382A1 (en) * | 2007-09-21 | 2009-03-26 | Semequip. Inc. | Method for extending equipment uptime in ion implantation |
US8118946B2 (en) | 2007-11-30 | 2012-02-21 | Wesley George Lau | Cleaning process residues from substrate processing chamber components |
US20090197015A1 (en) * | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
US8262800B1 (en) | 2008-02-12 | 2012-09-11 | Novellus Systems, Inc. | Methods and apparatus for cleaning deposition reactors |
US7871937B2 (en) | 2008-05-16 | 2011-01-18 | Asm America, Inc. | Process and apparatus for treating wafers |
US8252112B2 (en) * | 2008-09-12 | 2012-08-28 | Ovshinsky Innovation, Llc | High speed thin film deposition via pre-selected intermediate |
US7972961B2 (en) * | 2008-10-09 | 2011-07-05 | Asm Japan K.K. | Purge step-controlled sequence of processing semiconductor wafers |
US7967913B2 (en) * | 2008-10-22 | 2011-06-28 | Applied Materials, Inc. | Remote plasma clean process with cycled high and low pressure clean steps |
CN102197158B (zh) * | 2008-10-28 | 2014-01-29 | 三菱电机株式会社 | 等离子体cvd装置、半导体膜的制造方法、薄膜太阳能电池的制造方法以及等离子体cvd装置的清洗方法 |
US8216380B2 (en) * | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
US8591659B1 (en) | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
US20100203242A1 (en) * | 2009-02-06 | 2010-08-12 | Applied Materials, Inc. | self-cleaning susceptor for solar cell processing |
US8287648B2 (en) * | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
US8900471B2 (en) | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
TWI394986B (zh) * | 2009-11-09 | 2013-05-01 | Global Material Science Co Ltd | 擴散板結構及其製作方法 |
WO2011062940A2 (en) * | 2009-11-17 | 2011-05-26 | Applied Materials, Inc. | Large area plasma processing chamber with at-electrode rf matching |
US20110207256A1 (en) * | 2010-02-24 | 2011-08-25 | Applied Materials, Inc. | In-situ acceptor activation with nitrogen and/or oxygen plasma treatment |
US20110237051A1 (en) * | 2010-03-26 | 2011-09-29 | Kenneth Lee Hess | Process and apparatus for deposition of multicomponent semiconductor layers |
JP2013524510A (ja) | 2010-03-30 | 2013-06-17 | アプライド マテリアルズ インコーポレイテッド | p型拡散層の上に負荷電パッシベーション層を形成する方法 |
CN101837357B (zh) * | 2010-05-04 | 2011-10-05 | 宁波大学 | 一种等离子体清洗装置 |
JP5548028B2 (ja) * | 2010-05-14 | 2014-07-16 | 株式会社ランドマークテクノロジー | 堆積チャンバのリモートクリーニング方法 |
EP2426737A1 (en) | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack |
EP2439792A1 (en) | 2010-10-05 | 2012-04-11 | Applied Materials, Inc. | Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack |
WO2012113441A1 (en) | 2011-02-21 | 2012-08-30 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for a layer stack of a solar cell, and solar cell precursor |
EP2523227A1 (en) | 2011-05-13 | 2012-11-14 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for TCO layer, and solar cell precursor layer stack |
JP6239583B2 (ja) | 2012-03-20 | 2017-11-29 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | ラジカルを輸送するための装置および方法 |
US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
US10428426B2 (en) * | 2016-04-22 | 2019-10-01 | Applied Materials, Inc. | Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime |
JP6749225B2 (ja) * | 2016-12-06 | 2020-09-02 | 東京エレクトロン株式会社 | クリーニング方法 |
DE102017208329A1 (de) * | 2017-05-17 | 2018-11-22 | Ejot Gmbh & Co. Kg | Berührungsfreie Reinigungsvorrichtung |
US20180340257A1 (en) * | 2017-05-25 | 2018-11-29 | Applied Materials, Inc. | Diffuser for uniformity improvement in display pecvd applications |
US10872804B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US10872803B2 (en) | 2017-11-03 | 2020-12-22 | Asm Ip Holding B.V. | Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination |
US20210391156A1 (en) * | 2020-06-10 | 2021-12-16 | Applied Materials, Inc. | Clean unit for chamber exhaust cleaning |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55145338A (en) * | 1979-05-01 | 1980-11-12 | Toshiba Corp | Pressure reduction chemical vapour deposition device |
JPH02279160A (ja) * | 1989-03-08 | 1990-11-15 | Abtox Inc | プラズマ滅菌方法及び滅菌装置 |
DE4132559A1 (de) * | 1991-09-30 | 1993-04-08 | Siemens Ag | Verfahren zur in-situ-reinigung von abscheidekammern durch plasmaaetzen |
US5206471A (en) * | 1991-12-26 | 1993-04-27 | Applied Science And Technology, Inc. | Microwave activated gas generator |
US5443686A (en) * | 1992-01-15 | 1995-08-22 | International Business Machines Corporation Inc. | Plasma CVD apparatus and processes |
JP3084497B2 (ja) * | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
WO1996013621A1 (en) * | 1994-10-31 | 1996-05-09 | Krogh Ole D | An ecr plasma source |
US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
-
1996
- 1996-09-16 US US08/707,491 patent/US5788778A/en not_active Expired - Lifetime
-
1997
- 1997-09-12 KR KR1019970046999A patent/KR19980024578A/ko not_active Application Discontinuation
- 1997-09-15 TW TW086113383A patent/TW352456B/zh not_active IP Right Cessation
- 1997-09-16 JP JP29025697A patent/JP3693798B2/ja not_active Expired - Lifetime
-
2005
- 2005-01-05 KR KR1020050000753A patent/KR100852796B1/ko not_active IP Right Cessation
- 2005-04-28 JP JP2005132609A patent/JP4578314B2/ja not_active Expired - Lifetime
-
2006
- 2006-03-28 KR KR1020060027844A patent/KR20060086894A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20070087698A (ko) | 2007-08-29 |
JPH10149989A (ja) | 1998-06-02 |
US5788778A (en) | 1998-08-04 |
KR20060086894A (ko) | 2006-08-01 |
TW352456B (en) | 1999-02-11 |
KR100852796B1 (ko) | 2008-08-18 |
KR19980024578A (ko) | 1998-07-06 |
JP2005236332A (ja) | 2005-09-02 |
JP3693798B2 (ja) | 2005-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4578314B2 (ja) | 高出力遠隔起源を用いた堆積チャンバクリーニング装置 | |
JP4520140B2 (ja) | 遠隔の励起源を用いる堆積チャンバーのクリーニング技術 | |
KR102158307B1 (ko) | 플라즈마 프로세싱 챔버에서의 인-시튜 챔버 세정 효율 향상을 위한 플라즈마 처리 프로세스 | |
US6182603B1 (en) | Surface-treated shower head for use in a substrate processing chamber | |
US5454903A (en) | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization | |
US6880561B2 (en) | Fluorine process for cleaning semiconductor process chamber | |
KR100553481B1 (ko) | 챔버 세정을 강화시키는 방법 및 장치 | |
US5882424A (en) | Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field | |
US6736147B2 (en) | Semiconductor-processing device provided with a remote plasma source for self-cleaning | |
TWI254363B (en) | Chamber cleaning method | |
US20040144490A1 (en) | Method and apparatus for cleaning a CVD chamber | |
JPH1072672A (ja) | 非プラズマ式チャンバクリーニング法 | |
TW202109705A (zh) | 使用電漿及蒸氣之乾式清潔設備 | |
JPH11111699A (ja) | ガスクリーニング装置およびガスクリーニング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050519 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080612 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080617 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080917 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080922 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081017 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081022 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081117 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20081117 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090317 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090715 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20090730 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20100115 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100824 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |