KR960005775A - 원격 여기 소오스를 이용한 증착챔버 세척방법 및 세척가능한 증착장치 - Google Patents
원격 여기 소오스를 이용한 증착챔버 세척방법 및 세척가능한 증착장치 Download PDFInfo
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- KR960005775A KR960005775A KR1019950021520A KR19950021520A KR960005775A KR 960005775 A KR960005775 A KR 960005775A KR 1019950021520 A KR1019950021520 A KR 1019950021520A KR 19950021520 A KR19950021520 A KR 19950021520A KR 960005775 A KR960005775 A KR 960005775A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Abstract
본 발명은 전자장치들을 제작하는데 사용되는 증착 챔버를 세척하기 위한 방법을 제공하려는 것이다. 본 발명에 따른 방법은 증착 챔버의 외부에 위치된 원격 챔버내로 선구가스를 운반하는 단계와, 반응성 종들을 형성하도록 상기 원격 챔버내에서 상기 선구가스를 활성화시키는 단계와, 상기 반응성 종들을 상기 원격 챔버로부터 상기 증착 챔버내로 유동시키는 단계와, 그리고 상기 증착 챔버의 내부를 세척하도록 상기 원격 챔버로 부터 상기 증착 챔버내로 유동된 상기 반응성 종들을 이용하는 단계를 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명은 구체화하는 PECVD 장치의 블록 다이어그램이다.
Claims (27)
- 전자장치들을 제작하는데 사용되는 증착 챔버를 세척하기 위한 방법으로서, 상기 증착 챔버의 외부에 위치된 원격 챔버내로 선구가스를 운반하는 단계와, 반응성 종들을 형성하도록 상기 원격 챔버내에서 상기 선구가스를 활성화시키는 단계와, 상기 반응성 종들을 상기 원격 챔버로부터 상기 증착 챔버내로 유동시키는 단계와, 그리고 상기 증착 챔버의 내부를 세척하도록 상기 원격 챔버로부터 상기 증착 챔버내로 유동된 상기 반응성 종들을 이용하는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 선구가스를 활성화시키는 단계와, 원격 에너지원을 사용함으로써 수행되는 방법.
- 제1항에 있어서, 상기 원격 챔버로부터 상기 증착 챔버내로 유동된 상기 반응성 종들을 더 한층 여기시키도록 국부적인 에너지원을 이용하는 단계를 더 포함하는 방법.
- 제3항에 있어서, 상기 선구가스는 모든 할로겐과 이들의 기체상 화합물로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 제4항에 있어서, 상기 선구가스는 염소, 플루오르 및 이들의 기체상 혼합물로 구성된 그룹으로부터 선택되는 방법.
- 제2항에 있어서, 상기 원격 에너지원이 극초단파 에너지원인 방법.
- 제6항에 있어서, 상기 선구가스는 모든 할로겐과 이들의 기체상 화합물로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 제7항에 있어서, 상기 선구가스는 염소, 플루오르 및 이들의 기체상 혼합물로 구성된 그룹으로부터 선택되는 방법.
- 제2항에 있어서, 상기 국부적인 에너지원은 상기 증착 챔버내에서 플라즈마를 발생시키기 위한 RF 에너지원인 방법.
- 제2항에 있어서, 상기 반응성 종들이 원하지 않는 재료들을 제거하도록 상기 증착 챔버내로 들어가기 전에, 상기 반응성 종들을 여과시키는 단계를 더 포함하는 방법.
- 제2항에 있어서, 상기 원격 활성화 챔버내로 캐리어 가스를 유동시키는 단계를 더 포함하는 방법.
- 제11항에 있어서, 상기 캐리어 가스는 질소, 아르곤, 헬륨, 수소 및 산소로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 처리 챔버내에서 전자장치들을 제작하기 위한 방법으로서, 상기 처리 챔버의 외부에 위치된 원격 챔버내로 선구가스를 운반하는 단계와, 반응성 종들을 형성하도록 상기 원격 챔버내에서 상기 선구가스를 활성화시키는 단계와, 상기 반응성 종들을 상기 원격 챔버로부터 상기 처리 챔버내로 유동시키는 단계와, 상기 원격 챔버로부터 상기 처리 챔버내로 유동된 상기 반응성 종들을 더 한층 여기시키도록 국부적인 활성화 소오스를 이용하는 단계와, 그리고 상기 처리 챔버내에서의 제작과정 동안에 상기 국부적인 활성화 소오스에 의해서 더한층 여기된 상기 반응성 종들을 이용하는 단계를 포함하는 방법.
- 제13항에 있어서, 상기 선구가스를 활성화시키는 단계가, 원격 에너지원을 사용함으로써 수행되는 방법.
- 제13항에 있어서, 상기 선구가스는 모든 할로겐과 이들의 기체상 화합물로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 제15항에 있어서, 상기 선구가스는 염소, 플루오르, 및 이들의 기체상 혼합물로 구성된 그룹으로부터 선택되는 방법.
- 제14항에 있어서, 상기 원격 에너지원이 극초단파 에너지원인 방법.
- 제17항에 있어서, 상기 선구가스는 모든 할로겐과 이들의 기체상 화합물로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 제18항에 있어서, 상기 선구가스는 염소, 플루오르 및 이들의 기체상 혼합물로 구성된 그룹으로부터 선택되는 방법.
- 제13항에 있어서, 상기 국부적인 에너지원은 상기 증착 챔버내에서 플라즈마를 발생시키기 위한 RF에너지원인 방법.
- 제13항에 있어서, 상기 반응성 종들이 원하지 않는 재료들을 제거하도록 상기 증착 챔버내로 들어가기전에, 상기 반응성 종들을 여과시키는 단계를 더 포함하는 방법.
- 제13항에 있어서, 상기 원격 활성화 챔버내로 캐리어 가스를 유동시키는 단계를 더 포함하는 방법.
- 제22항에 있어서, 상기 캐리어 가스는 질소, 아르곤, 헬륨, 수소 및 산소로 구성된 기체들의 그룹으로부터 선택되는 방법.
- 세척을 위해서 선구가스의 공급원에 연결될 수 있는 증착장치로서, 증착 챔버와, 상기 증착 챔버내로 에너지를 인가하기에 적합한 제1활성화 소오스와, 상기 증착 챔버의 외부에 위치된 원격 챔버와, 상기 제1활성화 소오스로부터 분리되고 상기 원격 챔버내로 에너지를 인가하기에 적합한 제2활성화 소오스와, 반응성 종들을 형성하도록 제2활성화 소오스에 의해서 활성화된 상기 원격 챔버내로 선구가스를 원격 가스공급원으로부터 유동시키기 위한 제1도관과, 그리고 상기 원격 챔버로부터 상기 증착 챔버내로 상기 반응성 종들을 유동시키기 위한 제2도관을 포함하는 증착장치.
- 제24항에 있어서, 상기 원격 챔버내로의 상기 선구가스의 유동을 제어하는 밸브 및 유동제어장치를 더 포함하는 증착장치.
- 제25항에 있어서, 상기 원격 챔버내로의 상기 선구가스의 유동과는 다른 캐리어 가스의 유동을 제어하는 밸브 및 유동제어장치를 더 포함하는 증착장치.
- 제25항에 있어서, 상기 원격 챔버로부터 나오는 상기 반응성 종들의 유동으로부터 원하지 않는 재료들을 제거하도록 상기 제2도관에 구비된 필터를 더 포함하는 증착장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
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US27860594A | 1994-07-21 | 1994-07-21 | |
US08/278,605 | 1994-07-21 |
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KR960005775A true KR960005775A (ko) | 1996-02-23 |
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EP (1) | EP0697467A1 (ko) |
JP (3) | JPH0969504A (ko) |
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KR100538137B1 (ko) * | 1996-11-13 | 2006-02-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온처리챔버용덮개어셈블리 |
KR100852796B1 (ko) * | 1996-09-16 | 2008-08-18 | 에이케이티 가부시키가이샤 | 고전력 원격 여기원을 사용하는 증착 챔버의 세정 방법 및증착 장치 조립체 |
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KR100852796B1 (ko) * | 1996-09-16 | 2008-08-18 | 에이케이티 가부시키가이샤 | 고전력 원격 여기원을 사용하는 증착 챔버의 세정 방법 및증착 장치 조립체 |
KR100538137B1 (ko) * | 1996-11-13 | 2006-02-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온처리챔버용덮개어셈블리 |
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JP2010147483A (ja) | 2010-07-01 |
JP2004156143A (ja) | 2004-06-03 |
JP4520140B2 (ja) | 2010-08-04 |
JPH0969504A (ja) | 1997-03-11 |
EP0697467A1 (en) | 1996-02-21 |
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