TW351851B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW351851B
TW351851B TW086113977A TW86113977A TW351851B TW 351851 B TW351851 B TW 351851B TW 086113977 A TW086113977 A TW 086113977A TW 86113977 A TW86113977 A TW 86113977A TW 351851 B TW351851 B TW 351851B
Authority
TW
Taiwan
Prior art keywords
bipolar transistor
planar bipolar
semiconductor substrate
npn
semiconductor device
Prior art date
Application number
TW086113977A
Other languages
English (en)
Inventor
Takayuki Shimizu
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Application granted granted Critical
Publication of TW351851B publication Critical patent/TW351851B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
TW086113977A 1997-03-21 1997-09-25 Semiconductor device TW351851B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9068242A JPH10270567A (ja) 1997-03-21 1997-03-21 トランジスタ保護素子

Publications (1)

Publication Number Publication Date
TW351851B true TW351851B (en) 1999-02-01

Family

ID=13368119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113977A TW351851B (en) 1997-03-21 1997-09-25 Semiconductor device

Country Status (5)

Country Link
US (1) US6013941A (zh)
JP (1) JPH10270567A (zh)
KR (1) KR100553015B1 (zh)
CN (1) CN1136611C (zh)
TW (1) TW351851B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1150628C (zh) * 1996-11-07 2004-05-19 株式会社日立制作所 半导体集成电路器件及其制造方法
US6825504B2 (en) 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US6777784B1 (en) * 2000-10-17 2004-08-17 National Semiconductor Corporation Bipolar transistor-based electrostatic discharge (ESD) protection structure with a heat sink
US6465870B2 (en) * 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
JP3551153B2 (ja) * 2001-02-01 2004-08-04 日産自動車株式会社 半導体装置
CN1886834A (zh) * 2003-11-27 2006-12-27 松下电器产业株式会社 具备静电破坏保护元件的半导体装置
KR100604527B1 (ko) * 2003-12-31 2006-07-24 동부일렉트로닉스 주식회사 바이폴라 트랜지스터 제조방법
FR2914497B1 (fr) * 2007-04-02 2009-06-12 St Microelectronics Sa Structure de composants haute frequence a faibles capacites parasites
JP4803747B2 (ja) * 2007-06-18 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868624A (en) * 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
JPS59104165A (ja) * 1982-12-06 1984-06-15 Mitsubishi Electric Corp 電力用トランジスタ
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
JPS59159560A (ja) * 1983-03-01 1984-09-10 Toshiba Corp 半導体装置
GB8326451D0 (en) * 1983-10-03 1983-11-02 Texas Instruments Ltd Darlington transistors
US4967243A (en) * 1988-07-19 1990-10-30 General Electric Company Power transistor structure with high speed integral antiparallel Schottky diode
FR2677171B1 (fr) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa Transistor de gain en courant predetermine dans un circuit integre bipolaire.
JPH07122715A (ja) * 1994-04-27 1995-05-12 Toshiba Corp 半導体装置
JPH08274184A (ja) * 1995-03-31 1996-10-18 Toshiba Microelectron Corp 半導体集積回路の保護回路装置

Also Published As

Publication number Publication date
US6013941A (en) 2000-01-11
KR100553015B1 (ko) 2007-11-12
KR19980079713A (ko) 1998-11-25
CN1194466A (zh) 1998-09-30
CN1136611C (zh) 2004-01-28
JPH10270567A (ja) 1998-10-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees