FR2914497B1 - Structure de composants haute frequence a faibles capacites parasites - Google Patents

Structure de composants haute frequence a faibles capacites parasites

Info

Publication number
FR2914497B1
FR2914497B1 FR0754221A FR0754221A FR2914497B1 FR 2914497 B1 FR2914497 B1 FR 2914497B1 FR 0754221 A FR0754221 A FR 0754221A FR 0754221 A FR0754221 A FR 0754221A FR 2914497 B1 FR2914497 B1 FR 2914497B1
Authority
FR
France
Prior art keywords
parasites
high frequency
frequency components
low capacity
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0754221A
Other languages
English (en)
Other versions
FR2914497A1 (fr
Inventor
Jean Michel Simonnet
Andre Lhorte
Patrick Poveda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0754221A priority Critical patent/FR2914497B1/fr
Priority to US12/059,600 priority patent/US8269252B2/en
Publication of FR2914497A1 publication Critical patent/FR2914497A1/fr
Application granted granted Critical
Publication of FR2914497B1 publication Critical patent/FR2914497B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
FR0754221A 2007-04-02 2007-04-02 Structure de composants haute frequence a faibles capacites parasites Expired - Fee Related FR2914497B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0754221A FR2914497B1 (fr) 2007-04-02 2007-04-02 Structure de composants haute frequence a faibles capacites parasites
US12/059,600 US8269252B2 (en) 2007-04-02 2008-03-31 Structure of high-frequency components with low stray capacitances

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0754221A FR2914497B1 (fr) 2007-04-02 2007-04-02 Structure de composants haute frequence a faibles capacites parasites

Publications (2)

Publication Number Publication Date
FR2914497A1 FR2914497A1 (fr) 2008-10-03
FR2914497B1 true FR2914497B1 (fr) 2009-06-12

Family

ID=38626319

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0754221A Expired - Fee Related FR2914497B1 (fr) 2007-04-02 2007-04-02 Structure de composants haute frequence a faibles capacites parasites

Country Status (2)

Country Link
US (1) US8269252B2 (fr)
FR (1) FR2914497B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3029686A1 (fr) * 2014-12-08 2016-06-10 St Microelectronics Tours Sas Dispositif radiofrequence protege contre des surtensions
US10283463B2 (en) * 2017-04-11 2019-05-07 International Business Machines Corporation Terahertz detector comprised of P-N junction diode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0099979B1 (fr) * 1982-07-26 1987-04-08 LGZ LANDIS & GYR ZUG AG Détecteur de champ magnétique et son application
JPS6173345A (ja) * 1984-09-19 1986-04-15 Toshiba Corp 半導体装置
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
US5344785A (en) * 1992-03-13 1994-09-06 United Technologies Corporation Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US5841169A (en) 1996-06-27 1998-11-24 Harris Corporation Integrated circuit containing devices dielectrically isolated and junction isolated from a substrate
JPH10270567A (ja) * 1997-03-21 1998-10-09 Oki Electric Ind Co Ltd トランジスタ保護素子
JP2001345428A (ja) * 2000-03-27 2001-12-14 Toshiba Corp 半導体装置とその製造方法
US6429502B1 (en) * 2000-08-22 2002-08-06 Silicon Wave, Inc. Multi-chambered trench isolated guard ring region for providing RF isolation
JP2002100761A (ja) * 2000-09-21 2002-04-05 Mitsubishi Electric Corp シリコンｍｏｓｆｅｔ高周波半導体デバイスおよびその製造方法
US6562666B1 (en) * 2000-10-31 2003-05-13 International Business Machines Corporation Integrated circuits with reduced substrate capacitance
FR2830123A1 (fr) * 2001-09-26 2003-03-28 St Microelectronics Sa Peripherie haute tension

Also Published As

Publication number Publication date
US20080237785A1 (en) 2008-10-02
US8269252B2 (en) 2012-09-18
FR2914497A1 (fr) 2008-10-03

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231