TW346628B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW346628B
TW346628B TW085113738A TW85113738A TW346628B TW 346628 B TW346628 B TW 346628B TW 085113738 A TW085113738 A TW 085113738A TW 85113738 A TW85113738 A TW 85113738A TW 346628 B TW346628 B TW 346628B
Authority
TW
Taiwan
Prior art keywords
sense
detection pulse
main amplifier
generation means
amplifier
Prior art date
Application number
TW085113738A
Other languages
English (en)
Inventor
Ken Saito
Sunji Sukegawa
Yoshi Tachiban
Yukihide Suzuki
Akira Saeki
Original Assignee
Texas Instruments Inc
Hitachi Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc, Hitachi Kk filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW346628B publication Critical patent/TW346628B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW085113738A 1995-08-11 1996-11-11 Semiconductor memory device TW346628B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7227021A JPH0955087A (ja) 1995-08-11 1995-08-11 半導体メモリ装置

Publications (1)

Publication Number Publication Date
TW346628B true TW346628B (en) 1998-12-01

Family

ID=16854279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113738A TW346628B (en) 1995-08-11 1996-11-11 Semiconductor memory device

Country Status (4)

Country Link
US (1) US5768214A (zh)
JP (1) JPH0955087A (zh)
KR (1) KR100431477B1 (zh)
TW (1) TW346628B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130848A (en) * 1997-12-10 2000-10-10 Texas Instruments - Acer Incorporated Circuit of reducing transmission delay for synchronous DRAM
US6034920A (en) * 1998-11-24 2000-03-07 Texas Instruments Incorporated Semiconductor memory device having a back gate voltage controlled delay circuit
JP3376997B2 (ja) * 2000-03-13 2003-02-17 日本電気株式会社 ワンショット信号発生回路
JP3540243B2 (ja) 2000-04-24 2004-07-07 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
JP2003133423A (ja) * 2001-10-30 2003-05-09 Mitsubishi Electric Corp 検査用素子を有する半導体装置およびそれを用いた検査方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
KR940003408B1 (ko) * 1991-07-31 1994-04-21 삼성전자 주식회사 어드레스 천이 검출회로(atd)를 내장한 반도체 메모리 장치
JPH0574145A (ja) * 1991-09-10 1993-03-26 Fujitsu Ltd ダイナミツクｒａｍ
JP2580086B2 (ja) * 1991-09-20 1997-02-12 株式会社東芝 スタテイック型半導体記憶装置
JP2865469B2 (ja) * 1992-01-24 1999-03-08 三菱電機株式会社 半導体メモリ装置
JPH05325548A (ja) * 1992-05-15 1993-12-10 Mitsubishi Electric Corp 半導体記憶装置
JP2627475B2 (ja) * 1992-10-07 1997-07-09 三菱電機株式会社 半導体メモリ装置
JPH07211077A (ja) * 1993-12-03 1995-08-11 Toshiba Micro Electron Kk 半導体記憶装置
US5563843A (en) * 1995-03-09 1996-10-08 Intel Corporation Method and circuitry for preventing propagation of undesired ATD pulses in a flash memory device

Also Published As

Publication number Publication date
JPH0955087A (ja) 1997-02-25
US5768214A (en) 1998-06-16
KR100431477B1 (ko) 2004-08-27
KR970012755A (ko) 1997-03-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees