TW337047B - Power control device - Google Patents
Power control deviceInfo
- Publication number
- TW337047B TW337047B TW086110257A TW86110257A TW337047B TW 337047 B TW337047 B TW 337047B TW 086110257 A TW086110257 A TW 086110257A TW 86110257 A TW86110257 A TW 86110257A TW 337047 B TW337047 B TW 337047B
- Authority
- TW
- Taiwan
- Prior art keywords
- control device
- power control
- fusion portion
- electrodes
- sort
- Prior art date
Links
- 230000004927 fusion Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/66—Regulating electric power
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19101796 | 1996-07-19 | ||
JP14265897A JP3352360B2 (ja) | 1996-07-19 | 1997-05-30 | 電力制御素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW337047B true TW337047B (en) | 1998-07-21 |
Family
ID=26474586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086110257A TW337047B (en) | 1996-07-19 | 1997-07-19 | Power control device |
Country Status (8)
Country | Link |
---|---|
US (1) | US6013938A (zh) |
EP (1) | EP0819998B1 (zh) |
JP (1) | JP3352360B2 (zh) |
KR (1) | KR100288027B1 (zh) |
CN (1) | CN1089948C (zh) |
DE (1) | DE69708404T2 (zh) |
HK (1) | HK1011579A1 (zh) |
TW (1) | TW337047B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6713374B2 (en) | 1999-07-30 | 2004-03-30 | Formfactor, Inc. | Interconnect assemblies and methods |
US7435108B1 (en) | 1999-07-30 | 2008-10-14 | Formfactor, Inc. | Variable width resilient conductive contact structures |
US6489640B1 (en) * | 2000-10-06 | 2002-12-03 | National Semiconductor Corporation | Integrated circuit with fuse element and contact pad |
JP2002287252A (ja) * | 2001-03-27 | 2002-10-03 | Seiko Epson Corp | プロジェクタ |
JP4795631B2 (ja) | 2003-08-07 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7381594B2 (en) * | 2005-11-30 | 2008-06-03 | International Business Machines Corporation | CMOS compatible shallow-trench efuse structure and method |
JP2008053342A (ja) * | 2006-08-23 | 2008-03-06 | Fuji Electric Device Technology Co Ltd | ヒューズ内蔵型チップサイズパッケージ半導体装置 |
JP2009176833A (ja) * | 2008-01-22 | 2009-08-06 | Panasonic Corp | 半導体装置とその製造方法 |
JP2010074499A (ja) * | 2008-09-18 | 2010-04-02 | Panasonic Electric Works Co Ltd | リレー装置 |
DE102012222459A1 (de) * | 2012-12-06 | 2014-06-12 | Siemens Aktiengesellschaft | Schaltungsanordnung, Herstellungsverfahren für eine Schaltungsanordnung und Verfahren zum Schutz einer Schaltungsanordnung |
WO2015198940A1 (ja) * | 2014-06-26 | 2015-12-30 | 株式会社村田製作所 | 電子装置 |
CN110600545B (zh) * | 2019-10-09 | 2023-08-11 | 上海韦尔半导体股份有限公司 | 一种双向晶闸管及电子产品 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4045310A (en) * | 1976-05-03 | 1977-08-30 | Teletype Corporation | Starting product for the production of a read-only memory and a method of producing it and the read-only memory |
JPS5847596Y2 (ja) * | 1979-09-05 | 1983-10-29 | 富士通株式会社 | 半導体装置 |
FR2550886B1 (fr) * | 1983-08-17 | 1986-10-24 | Radiotechnique Compelec | Procede de realisation de transistors de puissance incluant des moyens de protection contre les surcharges et dispositifs ainsi obtenus |
US4738933A (en) * | 1985-08-27 | 1988-04-19 | Fei Microwave, Inc. | Monolithic PIN diode and method for its manufacture |
US4811080A (en) * | 1985-08-27 | 1989-03-07 | Fei Microwave, Inc. | Monolithic pin diode and method for its manufacture |
US4777520A (en) * | 1986-03-27 | 1988-10-11 | Oki Electric Industry Co. Ltd. | Heat-resistant plastic semiconductor device |
JPH0770654B2 (ja) * | 1987-03-27 | 1995-07-31 | 松下電子工業株式会社 | 半導体装置 |
JPS63308361A (ja) * | 1987-06-10 | 1988-12-15 | Mitsubishi Electric Corp | 電力用半導体装置における電極接続部構造 |
ES2070222T3 (es) * | 1989-09-19 | 1995-06-01 | Siemens Ag | Procedimiento para la fabricacion de un condensador de electrolito solido, ejecutado en forma de chip, con elemento de proteccion. |
JPH0831606B2 (ja) * | 1989-11-17 | 1996-03-27 | 株式会社東芝 | 大電力用半導体装置 |
US5780918A (en) * | 1990-05-22 | 1998-07-14 | Seiko Epson Corporation | Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same |
EP0514615B1 (en) * | 1991-05-23 | 1995-05-03 | STMicroelectronics S.r.l. | Electronic power device realized by a series of elementary semi-conductor components connected in parallel and related manufacturing process |
JPH04373148A (ja) * | 1991-06-21 | 1992-12-25 | Nippon Steel Corp | 半導体装置のヒューズ構造 |
US5376820A (en) * | 1992-02-05 | 1994-12-27 | Ncr Corporation | Semiconductor fuse structure |
JPH05274994A (ja) * | 1992-03-27 | 1993-10-22 | Tokyo Electric Power Co Inc:The | 電流ヒューズ |
JP3124144B2 (ja) * | 1993-01-27 | 2001-01-15 | 株式会社東芝 | 半導体装置 |
JPH06260633A (ja) * | 1993-03-05 | 1994-09-16 | Toshiba Corp | 双方向制御整流半導体装置 |
JPH0917872A (ja) * | 1995-06-27 | 1997-01-17 | Fujitsu Ltd | 半導体装置 |
-
1997
- 1997-05-30 JP JP14265897A patent/JP3352360B2/ja not_active Expired - Fee Related
- 1997-07-17 US US08/896,086 patent/US6013938A/en not_active Expired - Fee Related
- 1997-07-18 EP EP97112385A patent/EP0819998B1/en not_active Expired - Lifetime
- 1997-07-18 KR KR1019970034239A patent/KR100288027B1/ko not_active IP Right Cessation
- 1997-07-18 DE DE69708404T patent/DE69708404T2/de not_active Expired - Fee Related
- 1997-07-19 TW TW086110257A patent/TW337047B/zh not_active IP Right Cessation
- 1997-07-21 CN CN97115573A patent/CN1089948C/zh not_active Expired - Fee Related
-
1998
- 1998-12-01 HK HK98112612A patent/HK1011579A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1089948C (zh) | 2002-08-28 |
DE69708404D1 (de) | 2002-01-03 |
JPH1084108A (ja) | 1998-03-31 |
KR980012601A (ko) | 1998-04-30 |
CN1183646A (zh) | 1998-06-03 |
EP0819998A2 (en) | 1998-01-21 |
JP3352360B2 (ja) | 2002-12-03 |
EP0819998B1 (en) | 2001-11-21 |
EP0819998A3 (en) | 1998-05-27 |
DE69708404T2 (de) | 2002-07-11 |
HK1011579A1 (en) | 1999-07-16 |
KR100288027B1 (ko) | 2001-06-01 |
US6013938A (en) | 2000-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW337047B (en) | Power control device | |
WO1999054936A8 (en) | Polymer devices | |
CA2293932A1 (en) | Power supply control device and method of controlling the same | |
DE69526000T2 (de) | Mehrfach unterteiltes Stromversorgungsgerät mit unterteilter Stromregelung. | |
DE69525517D1 (de) | Ausgangssteuerschaltung mit auswählbarem, eingeschränktem Hochspannungsausgang | |
EP0677861A3 (en) | High speed drive circuit for switching regulator. | |
EP1309230A3 (en) | High voltage discharge lamp device | |
TW366497B (en) | Semiconductor device and method for controlling the same | |
GB2353110A (en) | Dynamic set point switching | |
WO1996012346A3 (en) | A protected switch | |
CA2253533A1 (en) | Control for an electronic heating device for providing consistent heating results | |
EP0669631A3 (en) | DC switching device. | |
DE69731437D1 (de) | Leistungsschalter mit phasenkontrolliertem Schaltregler | |
TW350116B (en) | A semiconductor device and the manufacturing method | |
DE69210328T2 (de) | Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode | |
CA2232888A1 (en) | Simplified control for running a switched reluctance motor | |
EP0388616A3 (en) | Overcurrent protective circuit for electrostatic self-turn-off devices | |
GB9302942D0 (en) | Low cost,low current power supply | |
CA2230427A1 (en) | Arc transfer circuit | |
TW336353B (en) | Semiconductor circuit | |
ATE249014T1 (de) | Stromdurchführungselement | |
CA2230660A1 (en) | Bi-level controls system | |
EP1313205A3 (de) | Dimmer mit Lastart-Erkennung | |
EP0949852A3 (de) | Betriebsschaltung für Entladungslampen mit umschaltbaren Betriebszuständen | |
WO2003041237A3 (de) | Vorrichtung zur ansteuerung einer elektrischen last und steuergerät |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |