TW334612B - Silicon on insulator buried plate trench capacitor - Google Patents

Silicon on insulator buried plate trench capacitor

Info

Publication number
TW334612B
TW334612B TW086109621A TW86109621A TW334612B TW 334612 B TW334612 B TW 334612B TW 086109621 A TW086109621 A TW 086109621A TW 86109621 A TW86109621 A TW 86109621A TW 334612 B TW334612 B TW 334612B
Authority
TW
Taiwan
Prior art keywords
trench
forming
substrate body
trench capacitor
depth
Prior art date
Application number
TW086109621A
Other languages
English (en)
Inventor
L Kleinhenz Richard
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW334612B publication Critical patent/TW334612B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW086109621A 1996-12-13 1997-07-08 Silicon on insulator buried plate trench capacitor TW334612B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/768,018 US5770484A (en) 1996-12-13 1996-12-13 Method of making silicon on insulator buried plate trench capacitor

Publications (1)

Publication Number Publication Date
TW334612B true TW334612B (en) 1998-06-21

Family

ID=25081282

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109621A TW334612B (en) 1996-12-13 1997-07-08 Silicon on insulator buried plate trench capacitor

Country Status (5)

Country Link
US (1) US5770484A (zh)
EP (1) EP0848418A3 (zh)
JP (1) JPH10178162A (zh)
KR (1) KR19980063505A (zh)
TW (1) TW334612B (zh)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001684A (en) * 1997-06-04 1999-12-14 Siemens Aktiengesellschaft Method for forming a capacitor
JPH118295A (ja) 1997-06-16 1999-01-12 Nec Corp 半導体装置及びその製造方法
KR100310470B1 (ko) 1997-12-30 2002-05-09 박종섭 양면반도체메모리소자및그제조방법
US6147378A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device and method for low power applications with single wrap around buried drain region
US6147377A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device
US6057195A (en) * 1998-05-22 2000-05-02 Texas Instruments - Acer Incorporated Method of fabricating high density flat cell mask ROM
KR100318467B1 (ko) 1998-06-30 2002-02-19 박종섭 본딩형실리콘이중막웨이퍼제조방법
GB2344215B (en) * 1998-11-26 2003-10-08 Siemens Plc Method of forming a buried plate
DE19910886B4 (de) * 1999-03-11 2008-08-14 Infineon Technologies Ag Verfahren zur Herstellung einer flachen Grabenisolation für elektrisch aktive Bauelemente
US6358791B1 (en) 1999-06-04 2002-03-19 International Business Machines Corporation Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
US6232170B1 (en) 1999-06-16 2001-05-15 International Business Machines Corporation Method of fabricating trench for SOI merged logic DRAM
US6066527A (en) * 1999-07-26 2000-05-23 Infineon Technologies North America Corp. Buried strap poly etch back (BSPE) process
TW415017B (en) * 1999-08-11 2000-12-11 Mosel Vitelic Inc Method of improving trench isolation
US6228706B1 (en) 1999-08-26 2001-05-08 International Business Machines Corporation Vertical DRAM cell with TFT over trench capacitor
JP2001068647A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
US6472702B1 (en) 2000-02-01 2002-10-29 Winbond Electronics Corporation Deep trench DRAM with SOI and STI
JP4938921B2 (ja) * 2000-03-16 2012-05-23 康夫 垂井 トランジスタ型強誘電体不揮発性記憶素子
US6396121B1 (en) * 2000-05-31 2002-05-28 International Business Machines Corporation Structures and methods of anti-fuse formation in SOI
US6538283B1 (en) * 2000-07-07 2003-03-25 Lucent Technologies Inc. Silicon-on-insulator (SOI) semiconductor structure with additional trench including a conductive layer
US6429061B1 (en) * 2000-07-26 2002-08-06 International Business Machines Corporation Method to fabricate a strained Si CMOS structure using selective epitaxial deposition of Si after device isolation formation
US6410384B1 (en) 2000-09-18 2002-06-25 Vanguard International Semiconductor Corporation Method of making an electric conductive strip
US6399436B1 (en) * 2000-09-18 2002-06-04 Vanguard International Semiconductor Corporation Method of making an electric conductive strip
US6555891B1 (en) * 2000-10-17 2003-04-29 International Business Machines Corporation SOI hybrid structure with selective epitaxial growth of silicon
US6440793B1 (en) * 2001-01-10 2002-08-27 International Business Machines Corporation Vertical MOSFET
US6436744B1 (en) * 2001-03-16 2002-08-20 International Business Machines Corporation Method and structure for creating high density buried contact for use with SOI processes for high performance logic
JP4084005B2 (ja) 2001-06-26 2008-04-30 株式会社東芝 半導体記憶装置及びその製造方法
KR100404480B1 (ko) 2001-06-29 2003-11-05 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6599813B2 (en) * 2001-06-29 2003-07-29 International Business Machines Corporation Method of forming shallow trench isolation for thin silicon-on-insulator substrates
US6599798B2 (en) * 2001-07-24 2003-07-29 Infineon Technologies Ag Method of preparing buried LOCOS collar in trench DRAMS
DE10142580B4 (de) * 2001-08-31 2006-07-13 Infineon Technologies Ag Verfahren zur Herstellung einer Grabenstrukturkondensatoreinrichtung
DE10153110B4 (de) * 2001-10-22 2006-11-30 Infineon Technologies Ag Speicherzelle
JP2003168687A (ja) * 2001-11-30 2003-06-13 Nec Electronics Corp 目合わせパターンおよびその製造方法
DE10158798A1 (de) * 2001-11-30 2003-06-18 Infineon Technologies Ag Kondensator und Verfahren zum Herstellen eines Kondensators
KR100422412B1 (ko) * 2001-12-20 2004-03-11 동부전자 주식회사 수직 실리콘-온-인슐레이터 구조의 원통형 트랜지스터 및그 제조 방법
TW557529B (en) * 2002-07-15 2003-10-11 Nanya Technology Corp Method of measuring a resistance in a deep trench
US6787838B1 (en) * 2003-06-18 2004-09-07 International Business Machines Corporation Trench capacitor DRAM cell using buried oxide as array top oxide
US6838334B1 (en) * 2003-07-30 2005-01-04 International Business Machines Corporation Method of fabricating a buried collar
US6995094B2 (en) * 2003-10-13 2006-02-07 International Business Machines Corporation Method for deep trench etching through a buried insulator layer
US7041553B2 (en) * 2004-06-02 2006-05-09 International Business Machines Corporation Process for forming a buried plate
US7229877B2 (en) * 2004-11-17 2007-06-12 International Business Machines Corporation Trench capacitor with hybrid surface orientation substrate
US7320912B2 (en) * 2005-05-10 2008-01-22 Promos Technologies Inc. Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same
US8530355B2 (en) * 2005-12-23 2013-09-10 Infineon Technologies Ag Mixed orientation semiconductor device and method
US7491604B2 (en) * 2006-03-07 2009-02-17 International Business Machines Corporation Trench memory with monolithic conducting material and methods for forming same
US7439135B2 (en) * 2006-04-04 2008-10-21 International Business Machines Corporation Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same
TW200913159A (en) * 2007-09-12 2009-03-16 Nanya Technology Corp Semiconductor devices and fabrication methods thereof
US7816759B2 (en) * 2008-01-09 2010-10-19 Infineon Technologies Ag Integrated circuit including isolation regions substantially through substrate
US7384842B1 (en) * 2008-02-14 2008-06-10 International Business Machines Corporation Methods involving silicon-on-insulator trench memory with implanted plate
US8110464B2 (en) * 2008-03-14 2012-02-07 International Business Machines Corporation SOI protection for buried plate implant and DT bottle ETCH
US7704854B2 (en) * 2008-05-06 2010-04-27 International Business Machines Corporation Method for fabricating semiconductor device having conductive liner for rad hard total dose immunity
US7855428B2 (en) 2008-05-06 2010-12-21 International Business Machines Corporation Conductive liner at an interface between a shallow trench isolation structure and a buried oxide layer
US7977172B2 (en) * 2008-12-08 2011-07-12 Advanced Micro Devices, Inc. Dynamic random access memory (DRAM) cells and methods for fabricating the same
US8426268B2 (en) 2009-02-03 2013-04-23 International Business Machines Corporation Embedded DRAM memory cell with additional patterning layer for improved strap formation
US8222104B2 (en) 2009-07-27 2012-07-17 International Business Machines Corporation Three dimensional integrated deep trench decoupling capacitors
US8129778B2 (en) * 2009-12-02 2012-03-06 Fairchild Semiconductor Corporation Semiconductor devices and methods for making the same
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US9064744B2 (en) * 2012-07-31 2015-06-23 International Business Machines Corporation Structure and method to realize conformal doping in deep trench applications
US9748250B2 (en) * 2015-06-08 2017-08-29 International Business Machines Corporation Deep trench sidewall etch stop
CN110943163B (zh) * 2018-09-21 2022-07-05 长鑫存储技术有限公司 一种改善电容孔形貌的方法
CN116033740A (zh) * 2021-10-25 2023-04-28 长鑫存储技术有限公司 半导体结构及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4820652A (en) * 1985-12-11 1989-04-11 Sony Corporation Manufacturing process and structure of semiconductor memory devices
KR910008830B1 (ko) * 1988-08-18 1991-10-21 현대전자산업 주식회사 산화물벽과 질화물벽을 이용한 트렌치 측면벽 도핑방법 및 그 반도체 소자
KR910007181B1 (ko) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Sdtas구조로 이루어진 dram셀 및 그 제조방법
JP2994110B2 (ja) * 1991-09-09 1999-12-27 株式会社東芝 半導体記憶装置
US5264716A (en) * 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array
US5528062A (en) * 1992-06-17 1996-06-18 International Business Machines Corporation High-density DRAM structure on soi
US5406515A (en) * 1993-12-01 1995-04-11 International Business Machines Corporation Method for fabricating low leakage substrate plate trench DRAM cells and devices formed thereby
US5384277A (en) * 1993-12-17 1995-01-24 International Business Machines Corporation Method for forming a DRAM trench cell capacitor having a strap connection
US5395786A (en) * 1994-06-30 1995-03-07 International Business Machines Corporation Method of making a DRAM cell with trench capacitor
JP3302190B2 (ja) * 1994-09-19 2002-07-15 株式会社東芝 半導体装置の製造方法
US5508219A (en) * 1995-06-05 1996-04-16 International Business Machines Corporation SOI DRAM with field-shield isolation and body contact

Also Published As

Publication number Publication date
EP0848418A2 (en) 1998-06-17
JPH10178162A (ja) 1998-06-30
KR19980063505A (ko) 1998-10-07
US5770484A (en) 1998-06-23
EP0848418A3 (en) 1999-03-10

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees