TW328921B - Production process for semiconductor wafer, lapping method used thereof and its apparatus - Google Patents

Production process for semiconductor wafer, lapping method used thereof and its apparatus

Info

Publication number
TW328921B
TW328921B TW085109880A TW85109880A TW328921B TW 328921 B TW328921 B TW 328921B TW 085109880 A TW085109880 A TW 085109880A TW 85109880 A TW85109880 A TW 85109880A TW 328921 B TW328921 B TW 328921B
Authority
TW
Taiwan
Prior art keywords
wafer
semiconductor wafer
production process
method used
lapping method
Prior art date
Application number
TW085109880A
Other languages
English (en)
Inventor
Fumihiko Hasegawa
Makoto Kobayashi
Tameyoshi Hirano
Original Assignee
Mutsubishi Gum Kk
Toyo Senshin Kagi Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mutsubishi Gum Kk, Toyo Senshin Kagi Kk filed Critical Mutsubishi Gum Kk
Application granted granted Critical
Publication of TW328921B publication Critical patent/TW328921B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/06—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving conveyor belts, a sequence of travelling work-tables or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
TW085109880A 1995-07-28 1996-08-12 Production process for semiconductor wafer, lapping method used thereof and its apparatus TW328921B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21250695 1995-07-28

Publications (1)

Publication Number Publication Date
TW328921B true TW328921B (en) 1998-04-01

Family

ID=16623804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085109880A TW328921B (en) 1995-07-28 1996-08-12 Production process for semiconductor wafer, lapping method used thereof and its apparatus

Country Status (5)

Country Link
US (1) US5700179A (zh)
EP (1) EP0755751A1 (zh)
KR (1) KR100227924B1 (zh)
MY (1) MY132393A (zh)
TW (1) TW328921B (zh)

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DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
DE19905737C2 (de) 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
US6112738A (en) * 1999-04-02 2000-09-05 Memc Electronics Materials, Inc. Method of slicing silicon wafers for laser marking
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
DE19956250C1 (de) 1999-11-23 2001-05-17 Wacker Siltronic Halbleitermat Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
US6461224B1 (en) * 2000-03-31 2002-10-08 Lam Research Corporation Off-diameter method for preparing semiconductor wafers
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
DE10159832A1 (de) * 2001-12-06 2003-06-26 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zu deren Herstellung
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US7416962B2 (en) 2002-08-30 2008-08-26 Siltronic Corporation Method for processing a semiconductor wafer including back side grinding
US6875086B2 (en) * 2003-01-10 2005-04-05 Intel Corporation Surface planarization
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
DE102004004556B4 (de) * 2004-01-29 2008-12-24 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7402520B2 (en) * 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US7659206B2 (en) * 2005-01-18 2010-02-09 Applied Materials, Inc. Removal of silicon oxycarbide from substrates
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US7601049B2 (en) 2006-01-30 2009-10-13 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7930058B2 (en) 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US7662023B2 (en) 2006-01-30 2010-02-16 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8460060B2 (en) * 2009-01-30 2013-06-11 Smr Patents S.A.R.L. Method for creating a complex surface on a substrate of glass
US8535118B2 (en) * 2011-09-20 2013-09-17 International Business Machines Corporation Multi-spindle chemical mechanical planarization tool
US9057790B2 (en) 2011-09-30 2015-06-16 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive interfaces
CN103959437B (zh) 2011-09-30 2017-08-01 圣戈班晶体及检测公司 具有特定结晶特征的iii‑v族衬底材料及其制备方法
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
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JP6540430B2 (ja) * 2015-09-28 2019-07-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6504262B2 (ja) * 2015-10-26 2019-04-24 日立金属株式会社 圧粉成形体のエッジ処理装置及び圧粉成形体のエッジ処理方法
US10807098B1 (en) 2017-07-26 2020-10-20 Pearson Incorporated Systems and methods for step grinding
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CN107695858A (zh) * 2017-09-28 2018-02-16 阜宁浔朋新材料科技有限公司 一种单晶硅切片生产用抛光装置
CN108942463A (zh) * 2018-08-08 2018-12-07 芜湖三华包装科技有限公司 一种塑木板加工用打磨装置
CN109551306B (zh) * 2018-11-08 2020-12-11 宝钢轧辊科技有限责任公司 Hc六辊轧机中间辊辊身端部倒角磨削方法
CN109465699B (zh) * 2018-12-28 2020-11-13 李琪 一种家具木板加工用双面抛光机及其操作方法
US10757860B1 (en) 2019-10-31 2020-09-01 Hemp Processing Solutions, LLC Stripper apparatus crop harvesting system
US10933424B1 (en) 2019-12-11 2021-03-02 Pearson Incorporated Grinding roll improvements
CN111113241B (zh) * 2019-12-27 2021-09-14 西安奕斯伟硅片技术有限公司 一种抛光机
EP3900876B1 (de) 2020-04-23 2024-05-01 Siltronic AG Verfahren zum schleifen einer halbleiterscheibe
CN111390678A (zh) * 2020-04-24 2020-07-10 山西潞安太阳能科技有限责任公司 一种硅片打磨机及其使用方法
CN111604792B (zh) * 2020-04-30 2021-06-22 东阳市洲梓环保科技有限公司 一种全自动异型抛光机
CN113478312B (zh) * 2021-07-05 2022-09-20 东莞市粤钢不锈钢制品有限公司 一种不锈钢板加工用高稳定性不锈钢板材拉丝系统
CN114536183B (zh) * 2022-02-28 2024-01-30 中建八局第一建设有限公司 一种建筑施工用废弃板材回收装置及其回收方法

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Also Published As

Publication number Publication date
KR100227924B1 (ko) 1999-11-01
EP0755751A1 (en) 1997-01-29
MY132393A (en) 2007-10-31
US5700179A (en) 1997-12-23
KR970008393A (ko) 1997-02-24

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