TW317518B - - Google Patents

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Publication number
TW317518B
TW317518B TW084105089A TW84105089A TW317518B TW 317518 B TW317518 B TW 317518B TW 084105089 A TW084105089 A TW 084105089A TW 84105089 A TW84105089 A TW 84105089A TW 317518 B TW317518 B TW 317518B
Authority
TW
Taiwan
Prior art keywords
patent application
item
temperature
bonding
target
Prior art date
Application number
TW084105089A
Other languages
English (en)
Chinese (zh)
Original Assignee
Komatsu Oyo Gijyutsu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Oyo Gijyutsu Kk filed Critical Komatsu Oyo Gijyutsu Kk
Application granted granted Critical
Publication of TW317518B publication Critical patent/TW317518B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW084105089A 1995-01-25 1995-05-22 TW317518B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1995/001089 WO1996023085A1 (en) 1995-01-25 1995-01-25 Autoclave bonding of sputtering target assembly

Publications (1)

Publication Number Publication Date
TW317518B true TW317518B (ja) 1997-10-11

Family

ID=22248573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105089A TW317518B (ja) 1995-01-25 1995-05-22

Country Status (5)

Country Link
EP (1) EP0752017A1 (ja)
JP (1) JP3804974B2 (ja)
AU (1) AU1834795A (ja)
TW (1) TW317518B (ja)
WO (1) WO1996023085A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11851748B2 (en) 2020-03-31 2023-12-26 Jx Metals Corporation Sputtering target and method for manufacturing a sputtering target

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983862B2 (ja) * 1997-10-24 2007-09-26 Ｄｏｗａホールディングス株式会社 スパッタリングターゲットとその接合方法及び接合装置
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
US7826702B2 (en) 2002-08-27 2010-11-02 Springworks, Llc Optically coupling into highly uniform waveguides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR101021536B1 (ko) 2004-12-08 2011-03-16 섬모픽스, 인코포레이티드 ＬｉＣｏＯ２의 증착
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US8342383B2 (en) 2006-07-06 2013-01-01 Praxair Technology, Inc. Method for forming sputter target assemblies having a controlled solder thickness
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
EP2225406A4 (en) 2007-12-21 2012-12-05 Infinite Power Solutions Inc PROCEDURE FOR SPUTTER TARGETS FOR ELECTROLYTE FILMS
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US20100012488A1 (en) * 2008-07-15 2010-01-21 Koenigsmann Holger J Sputter target assembly having a low-temperature high-strength bond
EP2319101B1 (en) 2008-08-11 2015-11-04 Sapurast Research LLC Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
JP5492998B2 (ja) 2009-09-01 2014-05-14 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜バッテリを組み込んだプリント回路基板
CN102947976B (zh) 2010-06-07 2018-03-16 萨普拉斯特研究有限责任公司 可充电、高密度的电化学设备
KR101240204B1 (ko) * 2011-12-19 2013-03-07 주식회사 나노신소재 원통형 스퍼터링 타겟의 제조방법
CN107914075A (zh) * 2017-11-14 2018-04-17 宁波江丰电子材料股份有限公司 靶材焊接方法
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Ｊｘ金属株式会社 分割スパッタリングターゲット及びその製造方法
CN113070685B (zh) * 2021-03-26 2022-05-03 安徽江淮汽车集团股份有限公司 包边与点焊一体化模具
CN113458523A (zh) * 2021-07-05 2021-10-01 宁波江丰电子材料股份有限公司 一种钽靶材组件的焊接方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270459A (ja) * 1987-04-24 1988-11-08 Matsushita Electric Ind Co Ltd スパツタ用タ−ゲツトのボンデイング方法
JP2731152B2 (ja) * 1987-11-17 1998-03-25 日立金属株式会社 冷却部材付きスパッタリング用ターゲット
JPH03140464A (ja) * 1989-10-26 1991-06-14 Kobe Steel Ltd ターゲットのバッキング装置
GB9108553D0 (en) * 1991-04-22 1991-06-05 Ion Coat Ltd Ionised vapour source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11851748B2 (en) 2020-03-31 2023-12-26 Jx Metals Corporation Sputtering target and method for manufacturing a sputtering target

Also Published As

Publication number Publication date
JPH10502707A (ja) 1998-03-10
WO1996023085A1 (en) 1996-08-01
JP3804974B2 (ja) 2006-08-02
AU1834795A (en) 1996-08-14
EP0752017A1 (en) 1997-01-08

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MM4A Annulment or lapse of patent due to non-payment of fees