TW306037B - - Google Patents

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Publication number
TW306037B
TW306037B TW085112080A TW85112080A TW306037B TW 306037 B TW306037 B TW 306037B TW 085112080 A TW085112080 A TW 085112080A TW 85112080 A TW85112080 A TW 85112080A TW 306037 B TW306037 B TW 306037B
Authority
TW
Taiwan
Prior art keywords
dielectric film
film
group
capacitor
item
Prior art date
Application number
TW085112080A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW306037B publication Critical patent/TW306037B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW085112080A 1995-09-08 1996-10-03 TW306037B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23162795A JP3274326B2 (ja) 1995-09-08 1995-09-08 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW306037B true TW306037B (enExample) 1997-05-21

Family

ID=16926478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085112080A TW306037B (enExample) 1995-09-08 1996-10-03

Country Status (4)

Country Link
JP (1) JP3274326B2 (enExample)
KR (1) KR100253866B1 (enExample)
DE (1) DE19636054A1 (enExample)
TW (1) TW306037B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG74643A1 (en) 1997-07-24 2000-08-22 Matsushita Electronics Corp Semiconductor device and method for fabricating the same
JP3424900B2 (ja) * 1997-10-24 2003-07-07 松下電器産業株式会社 半導体装置およびその製造方法
KR20000014388A (ko) * 1998-08-20 2000-03-15 윤종용 강유전체 메모리 커패시터 및 그 제조방법
DE19854418C2 (de) 1998-11-25 2002-04-25 Infineon Technologies Ag Halbleiterbauelement mit zumindest einem Kondensator sowie Verfahren zu dessen Herstellung
JP2002319636A (ja) * 2001-02-19 2002-10-31 Nec Corp 半導体記憶装置及びその製造方法
JP2002353416A (ja) * 2001-05-25 2002-12-06 Sony Corp 半導体記憶装置およびその製造方法
JP2002367989A (ja) * 2001-06-12 2002-12-20 Tokyo Inst Of Technol 酸化物誘電体薄膜及びその製造方法
KR100433491B1 (ko) * 2002-06-25 2004-05-31 동부전자 주식회사 반도체 소자의 제조방법
JP5726501B2 (ja) * 2010-12-10 2015-06-03 一般財団法人ファインセラミックスセンター 研磨材料、研磨用組成物及び研磨方法
JP5703170B2 (ja) * 2011-08-16 2015-04-15 株式会社アルバック 強誘電体膜の作製方法
US11476261B2 (en) * 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11716858B1 (en) 2021-05-07 2023-08-01 Kepler Computing Inc. Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12289894B1 (en) 2022-06-17 2025-04-29 Kepler Computing Inc. Method of fabricating transistors and stacked planar capacitors for memory and logic applications
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding
US20240274651A1 (en) 2023-02-10 2024-08-15 Kepler Computing Inc. Method of forming stacked capacitors through wafer bonding
US12640199B1 (en) 2024-02-15 2026-05-26 Kepler Computing Inc. Amplitude modulation for writing to a multi-level bit-cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
JP2715736B2 (ja) * 1991-06-28 1998-02-18 日本電気株式会社 半導体装置の製造方法
EP0568064B1 (en) * 1992-05-01 1999-07-14 Texas Instruments Incorporated Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
DE69327815T2 (de) * 1992-05-29 2000-08-17 Texas Instruments Inc., Dallas Donatoren-dotierte Perovskite für Dünnfilm-Dielektrika
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
JP2550852B2 (ja) * 1993-04-12 1996-11-06 日本電気株式会社 薄膜キャパシタの製造方法

Also Published As

Publication number Publication date
DE19636054A1 (de) 1997-03-13
JPH0982907A (ja) 1997-03-28
KR100253866B1 (ko) 2000-04-15
JP3274326B2 (ja) 2002-04-15

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