KR100253866B1 - 다이나믹 랜덤 억세스 메모리장치 및 그 반도체장치의 제조방법 - Google Patents

다이나믹 랜덤 억세스 메모리장치 및 그 반도체장치의 제조방법 Download PDF

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Publication number
KR100253866B1
KR100253866B1 KR1019960038803A KR19960038803A KR100253866B1 KR 100253866 B1 KR100253866 B1 KR 100253866B1 KR 1019960038803 A KR1019960038803 A KR 1019960038803A KR 19960038803 A KR19960038803 A KR 19960038803A KR 100253866 B1 KR100253866 B1 KR 100253866B1
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KR
South Korea
Prior art keywords
insulating film
film
capacitor
lower electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019960038803A
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English (en)
Korean (ko)
Inventor
게이타로 이마이
겐로 나카무라
가즈히로 에구치
마사히로 기요토시
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Publication of KR100253866B1 publication Critical patent/KR100253866B1/ko
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Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019960038803A 1995-09-08 1996-09-07 다이나믹 랜덤 억세스 메모리장치 및 그 반도체장치의 제조방법 Expired - Fee Related KR100253866B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23162795A JP3274326B2 (ja) 1995-09-08 1995-09-08 半導体装置およびその製造方法
JP95-231627 1995-09-08

Publications (1)

Publication Number Publication Date
KR100253866B1 true KR100253866B1 (ko) 2000-04-15

Family

ID=16926478

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960038803A Expired - Fee Related KR100253866B1 (ko) 1995-09-08 1996-09-07 다이나믹 랜덤 억세스 메모리장치 및 그 반도체장치의 제조방법

Country Status (4)

Country Link
JP (1) JP3274326B2 (enExample)
KR (1) KR100253866B1 (enExample)
DE (1) DE19636054A1 (enExample)
TW (1) TW306037B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0893832A3 (en) 1997-07-24 1999-11-03 Matsushita Electronics Corporation Semiconductor device including a capacitor device and method for fabricating the same
JP3424900B2 (ja) * 1997-10-24 2003-07-07 松下電器産業株式会社 半導体装置およびその製造方法
KR20000014388A (ko) * 1998-08-20 2000-03-15 윤종용 강유전체 메모리 커패시터 및 그 제조방법
DE19854418C2 (de) 1998-11-25 2002-04-25 Infineon Technologies Ag Halbleiterbauelement mit zumindest einem Kondensator sowie Verfahren zu dessen Herstellung
JP2002319636A (ja) * 2001-02-19 2002-10-31 Nec Corp 半導体記憶装置及びその製造方法
JP2002353416A (ja) * 2001-05-25 2002-12-06 Sony Corp 半導体記憶装置およびその製造方法
JP2002367989A (ja) * 2001-06-12 2002-12-20 Tokyo Inst Of Technol 酸化物誘電体薄膜及びその製造方法
KR100433491B1 (ko) * 2002-06-25 2004-05-31 동부전자 주식회사 반도체 소자의 제조방법
JP5726501B2 (ja) * 2010-12-10 2015-06-03 一般財団法人ファインセラミックスセンター 研磨材料、研磨用組成物及び研磨方法
JP5703170B2 (ja) * 2011-08-16 2015-04-15 株式会社アルバック 強誘電体膜の作製方法
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11716858B1 (en) 2021-05-07 2023-08-01 Kepler Computing Inc. Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12324162B1 (en) 2022-06-17 2025-06-03 Kepler Computing Inc. Stacked capacitors with shared electrodes and methods of fabrication
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding
US20240274651A1 (en) 2023-02-10 2024-08-15 Kepler Computing Inc. Method of forming stacked capacitors through wafer bonding

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930024169A (ko) * 1992-05-29 1993-12-22 윌리엄 이. 힐러 도너 도핑 퍼브로스카이트 구조물 및 그 형성 방법
EP0618598A1 (en) * 1993-03-31 1994-10-05 Texas Instruments Incorporated Improved electrode interface for high-dielectric-constant materials

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
JP2715736B2 (ja) * 1991-06-28 1998-02-18 日本電気株式会社 半導体装置の製造方法
DE69325614T2 (de) * 1992-05-01 2000-01-13 Texas Instruments Inc Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
JP2550852B2 (ja) * 1993-04-12 1996-11-06 日本電気株式会社 薄膜キャパシタの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930024169A (ko) * 1992-05-29 1993-12-22 윌리엄 이. 힐러 도너 도핑 퍼브로스카이트 구조물 및 그 형성 방법
EP0618598A1 (en) * 1993-03-31 1994-10-05 Texas Instruments Incorporated Improved electrode interface for high-dielectric-constant materials

Also Published As

Publication number Publication date
DE19636054A1 (de) 1997-03-13
JP3274326B2 (ja) 2002-04-15
JPH0982907A (ja) 1997-03-28
TW306037B (enExample) 1997-05-21

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