TW306037B - - Google Patents
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- Publication number
- TW306037B TW306037B TW085112080A TW85112080A TW306037B TW 306037 B TW306037 B TW 306037B TW 085112080 A TW085112080 A TW 085112080A TW 85112080 A TW85112080 A TW 85112080A TW 306037 B TW306037 B TW 306037B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric film
- film
- group
- capacitor
- item
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 106
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 31
- 150000002500 ions Chemical class 0.000 claims description 30
- 229910052788 barium Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052748 manganese Inorganic materials 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 229910052742 iron Inorganic materials 0.000 claims description 16
- 229910021645 metal ion Inorganic materials 0.000 claims description 14
- -1 gold ion Chemical class 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000011049 filling Methods 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910015617 MoNx Inorganic materials 0.000 claims description 3
- 229910004156 TaNx Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- RZDQHXVLPYMFLM-UHFFFAOYSA-N gold tantalum Chemical compound [Ta].[Ta].[Ta].[Au] RZDQHXVLPYMFLM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910001460 tantalum ion Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 4
- 229910001887 tin oxide Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910008764 WNx Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 210000000496 pancreas Anatomy 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 31
- 229910052712 strontium Inorganic materials 0.000 description 24
- 239000004020 conductor Substances 0.000 description 18
- 230000005684 electric field Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000000654 additive Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 9
- 229910021342 tungsten silicide Inorganic materials 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000011575 calcium Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910001922 gold oxide Inorganic materials 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- WIQYHLODGDNEBE-UHFFFAOYSA-N [O-2].[Ta+5].[Au+3].[O-2].[O-2].[O-2] Chemical compound [O-2].[Ta+5].[Au+3].[O-2].[O-2].[O-2] WIQYHLODGDNEBE-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- HIJLKWFRGYZKKL-UHFFFAOYSA-N [O-2].[Ti+4].[Au+3] Chemical compound [O-2].[Ti+4].[Au+3] HIJLKWFRGYZKKL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 235000012907 honey Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- YDZQQRWRVYGNER-UHFFFAOYSA-N iron;titanium;trihydrate Chemical compound O.O.O.[Ti].[Fe] YDZQQRWRVYGNER-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23162795A JP3274326B2 (ja) | 1995-09-08 | 1995-09-08 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW306037B true TW306037B (enrdf_load_html_response) | 1997-05-21 |
Family
ID=16926478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085112080A TW306037B (enrdf_load_html_response) | 1995-09-08 | 1996-10-03 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3274326B2 (enrdf_load_html_response) |
| KR (1) | KR100253866B1 (enrdf_load_html_response) |
| DE (1) | DE19636054A1 (enrdf_load_html_response) |
| TW (1) | TW306037B (enrdf_load_html_response) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0893832A3 (en) * | 1997-07-24 | 1999-11-03 | Matsushita Electronics Corporation | Semiconductor device including a capacitor device and method for fabricating the same |
| JP3424900B2 (ja) * | 1997-10-24 | 2003-07-07 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| KR20000014388A (ko) * | 1998-08-20 | 2000-03-15 | 윤종용 | 강유전체 메모리 커패시터 및 그 제조방법 |
| DE19854418C2 (de) | 1998-11-25 | 2002-04-25 | Infineon Technologies Ag | Halbleiterbauelement mit zumindest einem Kondensator sowie Verfahren zu dessen Herstellung |
| JP2002319636A (ja) * | 2001-02-19 | 2002-10-31 | Nec Corp | 半導体記憶装置及びその製造方法 |
| JP2002353416A (ja) * | 2001-05-25 | 2002-12-06 | Sony Corp | 半導体記憶装置およびその製造方法 |
| JP2002367989A (ja) * | 2001-06-12 | 2002-12-20 | Tokyo Inst Of Technol | 酸化物誘電体薄膜及びその製造方法 |
| KR100433491B1 (ko) * | 2002-06-25 | 2004-05-31 | 동부전자 주식회사 | 반도체 소자의 제조방법 |
| JP5726501B2 (ja) * | 2010-12-10 | 2015-06-03 | 一般財団法人ファインセラミックスセンター | 研磨材料、研磨用組成物及び研磨方法 |
| JP5703170B2 (ja) * | 2011-08-16 | 2015-04-15 | 株式会社アルバック | 強誘電体膜の作製方法 |
| US10847201B2 (en) | 2019-02-27 | 2020-11-24 | Kepler Computing Inc. | High-density low voltage non-volatile differential memory bit-cell with shared plate line |
| US11482529B2 (en) * | 2019-02-27 | 2022-10-25 | Kepler Computing Inc. | High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor |
| US11659714B1 (en) | 2021-05-07 | 2023-05-23 | Kepler Computing Inc. | Ferroelectric device film stacks with texturing layer, and method of forming such |
| US11527277B1 (en) | 2021-06-04 | 2022-12-13 | Kepler Computing Inc. | High-density low voltage ferroelectric memory bit-cell |
| US12324163B1 (en) | 2022-03-15 | 2025-06-03 | Kepler Computing Inc. | Planar capacitors with shared electrode and methods of fabrication |
| US20230395134A1 (en) | 2022-06-03 | 2023-12-07 | Kepler Computing Inc. | Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell |
| US12289894B1 (en) | 2022-06-17 | 2025-04-29 | Kepler Computing Inc. | Method of fabricating transistors and stacked planar capacitors for memory and logic applications |
| US12300297B1 (en) | 2022-08-05 | 2025-05-13 | Kepler Computing Inc. | Memory array with buried or backside word-line |
| US12334127B2 (en) | 2023-01-30 | 2025-06-17 | Kepler Computing Inc. | Non-linear polar material based multi-capacitor high density bit-cell |
| US11765908B1 (en) | 2023-02-10 | 2023-09-19 | Kepler Computing Inc. | Memory device fabrication through wafer bonding |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434102A (en) * | 1991-02-25 | 1995-07-18 | Symetrix Corporation | Process for fabricating layered superlattice materials and making electronic devices including same |
| JP2715736B2 (ja) * | 1991-06-28 | 1998-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE69325614T2 (de) * | 1992-05-01 | 2000-01-13 | Texas Instruments Inc | Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten |
| DE69327815T2 (de) * | 1992-05-29 | 2000-08-17 | Texas Instruments Inc., Dallas | Donatoren-dotierte Perovskite für Dünnfilm-Dielektrika |
| US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
| JP2550852B2 (ja) * | 1993-04-12 | 1996-11-06 | 日本電気株式会社 | 薄膜キャパシタの製造方法 |
-
1995
- 1995-09-08 JP JP23162795A patent/JP3274326B2/ja not_active Expired - Fee Related
-
1996
- 1996-09-05 DE DE19636054A patent/DE19636054A1/de not_active Ceased
- 1996-09-07 KR KR1019960038803A patent/KR100253866B1/ko not_active Expired - Fee Related
- 1996-10-03 TW TW085112080A patent/TW306037B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR100253866B1 (ko) | 2000-04-15 |
| JP3274326B2 (ja) | 2002-04-15 |
| DE19636054A1 (de) | 1997-03-13 |
| JPH0982907A (ja) | 1997-03-28 |
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